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arXiv · 2310.14900

Non-volatile memory based on PZT/FeGa thin film memtranstor

Jin-Cheng He·Jian Xing·Jian-Xin Shen·Dan Su·En-Ke Liu·Shou-Guo Wang·Young Sun
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Abstract

The PZT/FeGa thin film memtranstor was prepared and the modulation of the magnetoelectric coefficient by external magnetic and electric fields was studied. The magnetoelectric coefficient of the PZT/FeGa memtranstor can be reversed by flipping the direction of magnetization of FeGa or ferroelectric polarization of PZT. Notably, the sign of the magnetoelectric coefficient can be switched repeatedly by reversing ferroelectric polarization of PZT when the external magnetic field remains constant. Moreover, the binary switching behavior can still be maintained under zero DC bias magnetic field. When the polarization direction remains stable, the magnetoelectric coefficient also does not change. This means that the magnetoelectric coefficient of PZT/FeGa is non-volatile. Furthermore, the retention and endurance characteristics of the PZT/FeGa thin film memtranstor have been investigated. These findings demonstrate the potential of the PZT/FeGa thin film memtranstor for non-volatile memory applications.

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Jin-Cheng He, Jian Xing, Jian-Xin Shen, Dan Su, En-Ke Liu, Shou-Guo Wang, Young Sun. 2023-10-23. Non-volatile memory based on PZT/FeGa thin film memtranstor. https://arxiv.org/abs/2310.14900

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