arXiv subjects

Enke Liu

Publications and source records attributed to Enke Liu.

At least 73 records · Page 4Linked to original sources

arXiv2019

Surface states in bulk single crystal of topological semimetal Co$_3$Sn$_2$S$_2$ towards water oxidation

The band inversion in topological phase matters bring exotic physical properties such as the emergence of a topologically protected surface states. They strongly influence the surface electronic structures of the investigated materials and could serve as a good platform to gain insight into the catalytic mechanism of surface reactions. Here we synthesized high-quality bulk single crystals of the topological semimetal Co$_3$Sn$_2$S$_2$. We found that at room temperature, Co$_3$Sn$_2$S$_2$ naturally hosts the band structure of a topological semimetal. This guarantees the existence of robust surface states from the Co atoms. Bulk single crystal of Co$_3$Sn$_2$S$_2$ exposes their Kagome lattice that constructed by Co atoms and have high electrical conductivity. They serves as catalytic centers for oxygen evolution process (OER), making bonding and electron transfer more efficient due to the partially filled $e_g$ orbital. The bulk single crystal exhibits outstanding OER catalytic performance, although the surface area is much smaller than that of Co-based nanostructured catalysts. Our findings emphasize the importance of tailoring topological non-trivial surface states for the rational design of high-activity electrocatalysts.

cond-mat.mtrl-sci↗

arXiv2019

Planar topological Hall effect in a uniaxial van der Waals ferromagnet Fe3GeTe2

In this work, we reported the observation of a novel planar topological Hall effect (PTHE) in single crystal of Fe3GeTe2, a paradigmatic two-dimensional ferromagnet with strong uniaxial anisotropy. The Hall effect and magnetoresistance varied periodically when the external magnetic field rotated in the ac (or bc) plane, while the PTHE emerged and maintained robust with field swept across the hard-magnetized ab plane. The PTHE covers the whole temperature region below Tc (~150 K) and a comparatively large value is observed at 100 K. Emergence of an internal gauge field was proposed to explain the origin of this large PTHE, which is either generated by the possible topological domain structure of uniaxial Fe3GeTe2 or the non-coplanar spin structure formed during the in-plane magnetization. Our results promisingly provide an alternative detection method to the in-plane skyrmion formation and may bring brand-new prospective to magneto-transport studies in condensed matter physics.

cond-mat.mtrl-sci↗

arXiv2019

Interface-driven unusual anomalous Hall effect in MnxGa/Pt bilayers: No correlation with chiral spin structures

The effects of spin-orbit coupling and symmetry breaking at the interface between a ferromagnet and heavy metal are particularly important for spin-based information storage and computation. Recent discoveries suggest they can create chiral spin structures (e.g. skyrmions), which have often been identified through the appearance of the bump/dip features of Hall signals, the so-called topological Hall effect (THE). In this work, however, we have present an unusual anomalous Hall effect (UAHE) in MnxGa/Pt bilayers and demonstrated that the features extremely similar to THE can be generated without involving any chiral spin structures. The low temperature magnetic force microscopy has been used to explore the magnetic field-dependent behavior of spin structures, and the UAHE as a function of magnetic field does not peak near the maximal density of magnetic bubbles. The results unambiguously evidence that the UAHE in MnxGa/Pt bilayers shows no correlation with chiral spin structures but is driven by the modified interfacial properties. The bump/dip features of Hall signals cannot be taken as an unambiguous signature for the emergence of chiral spin structures, and a wealth of underlying and interesting physics need explored.

cond-mat.mtrl-sci↗

arXiv2019

Fermi-arc diversity on surface terminations of the magnetic Weyl semimetal Co3Sn2S2

Bulk-surface correspondence in Weyl semimetals assures the formation of topological "Fermi-arc" surface bands whose existence is guaranteed by bulk Weyl nodes. By investigating three distinct surface terminations of the ferromagnetic semimetal Co3Sn2S2 we verify spectroscopically its classification as a time reversal symmetry broken Weyl semimetal. We show that the distinct surface potentials imposed by three different terminations modify the Fermi-arc contour and Weyl node connectivity. On the Sn surface we identify intra-Brillouin zone Weyl node connectivity of Fermi-arcs, while on Co termination the connectivity is across adjacent Brillouin zones. On the S surface Fermi-arcs overlap with non-topological bulk and surface states that ambiguate their connectivity and obscure their exact identification. By these we resolve the topologically protected electronic properties of a Weyl semimetal and its unprotected ones that can be manipulated and engineered.

cond-mat.mes-hall↗

arXiv2018

Magnetic Weyl Semimetal in Quasi Two-dimensional Half Metallic Co$_3$Sn$_2$Se$_2$

We have found a ferromagnetic Weyl semimetal (WSM) in half metallic Co$_3$Sn$_2$Se$_2$. The three pairs of Weyl points near Fermi level (E$_F$) are derived from nodal lines gapped by spin-orbit coupling (SOC). Though the Weyl points are 0.11 eV above the charge neutral point, Fermi arc related states in the cleaved surface can range from E$_F$ -0.15 to E$_F$ +0.11 eV in energy space, due to the surface bands dispersion. Hence, Weyl points related physics should be detected by surface measurements, such as ARPES and STM. Because of the large Berry curvature deriving from the gapped nodal lines and Weyl points, the anomalous Hall conductivity of Co$_3$Sn$_2$Se$_2$ can keep above 620 S/cm in a large energy window. Beside magnetic WSM, Co$_3$Sn$_2$Se$_2$ also possesses a Z$_2$ topological semimetal phase as the temperature is above Curie temperature. Owing to the quasi two-dimensional lattice structure, it is also possible to realize quantum anomalous Hall effect in its 2D limit via the size effect. Therefore, Co$_3$Sn$_2$Se$_2$ provides a good platform for the interplay of different topological states and magnetic states.

cond-mat.mtrl-sci↗

arXiv2018

Tunable magnetic and transport properties of Mn3Ga thin films on Ta/Ru seedlayer

Hexagonal D019-type Mn3Z alloys that possess large anomalous and topological-like Hall effects have attracted much attention due to their great potential in the antiferromagnetic spintronic devices. Here, we report the preparation of Mn3Ga film in both tetragonal and hexagonal phases with a tuned Ta/Ru seed layer on the thermally oxidized Si substrate. A large coercivity together with a large anomalous Hall resistivity is found in the Ta-only sample with mixed tetragonal phase. By increasing the thickness of Ru layer, the tetragonal phase gradually disappears and a relatively pure hexagonal phase is obtained in the Ta(5)/Ru(30) buffered sample. Further magnetic and transport measurements revealed that the anomalous Hall conductivity nearly vanishes in the pure hexagonal sample, while an abnormal asymmetric hump structure emerges in the low field region. The extracted additional Hall term is robust in a large temperature range and presents a sign reversal above 200K. The abnormal Hall properties are proposed to be closely related with the frustrated spin structure of D019 Mn3Ga.

cond-mat.mtrl-sci↗

arXiv2017

Observation of Various and Spontaneous Magnetic Skyrmionic Bubbles at Room-Temperature in a Frustrated Kagome Magnet with Uniaxial Magnetic Anisotropy

Various and spontaneous magnetic skyrmionic bubbles are experimentally observed for the first time, at room temperature in a frustrated kagome magnet Fe3Sn2 with unixial magnetic anisotropy. The magnetization dynamics were investigated using in-situ Lorentz transmission electron microscopy, revealing that the transformation between different magnetic bubbles and domains are via the motion of Bloch lines driven by applied external magnetic field. The results demonstrate that Fe3Sn2 facilitates a unique magnetic control of topological spin textures at room temperature, making it a promising candidate for further skyrmion-based spintronic devices.

cond-mat.mtrl-sci↗

arXiv2016

A centrosymmetric hexagonal magnet with superstable biskyrmion magnetic nanodomains in a wide temperature range of 100K to 340K

Here, we report on the experimental discovery of biskyrmion magnetic nanodomains at RT and the observation of a biskyrmion-derived topological Hall effect (THE) in the centrosymmetric hexagonal MnNiGa magnet. Using a phase reconstruction technique based on a transport-of-intensity equation (TIE), we established the texture of the biskyrmion spin. Results from Lorentz transmission electron microscopy (TEM) and the topological Hall effect revealed that the biskyrmion phase is stable over a much wider temperature range (100 K to ~340K) and a larger magnetic field range in our material than in skyrmion-hosting bulk crystals reported previously[1-3,6]. The super-wide operating temperature and the broad range of material options indicate important progress toward the realization of skyrmion-based spintronic devices.

cond-mat.mtrl-sci↗

arXiv2015

High Electron Mobility and Large Magnetoresistance in the Half-Heusler Semimetal LuPtBi

Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magneto-electric devices. Here, we report on the discovery of an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000 cm2/Vs with a non-saturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500 cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov-de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our finding provide a new approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.

cond-mat.mtrl-sci↗

arXiv2015

Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal

High-quality nonmagnetic half-Heusler ScPtBi single crystals were synthesized by a Bi self-flux method. This compound was revealed to be a hole-dominated semimetal with a large low-field magnetoresistance up to 240% at 2K in a magnetic field of 1T. Magneto-transport measurements demonstrated that the large low-field magnetoresistance effect resulted from the coexistence of field-induced metal-semiconductor transition and weak-antilocalization effect. Moreover, Hall measurements indicated that ScPtBi single crystal showed a high mobility over a wide temperature region even up to room temperature (4050 cm2V-1s-1 at 2K - 2016 cm2V-1s-1 at 300K). These findings not only suggest the nonmagnetic ScPtBi semimetal a potential material candidate for applications in high-sensitivity magnetic sensors, but also are of great significance to comprehensively understand the rare-earth based half-Heusler compounds.

cond-mat.str-el↗

arXiv2015

Transition from semiconducting to metallic-like conducting and weak antilocalization effect in single crystals of LuPtSb

High quality half-Heusler single crystals of LuPtSb have been synthesized by a Pb flux method. The temperature dependent resistivity and Hall effects indicate that the LuPtSb crystal is a p-type gapless semiconductor showing a transition from semiconducting to metallic conducting at 150 K. Moreover, a weakly temperature-dependent positive magnetoresistance (MR) as large as 109 % and high carrier mobility up to 2950 cm2/Vs are experimentally observed at temperatures below 150 K. The low-field MR data shows evidence for weak antilocalization (WAL) effect at temperatures even up to 150 K. Analysis of the temperature and angle dependent magnetoconductance manifests that the WAL effect originates from the bulk contribution owing to the strong spin-orbital coupling.

cond-mat.str-el↗

arXiv2014

NMR evidence for enhanced orbital diamagnetism in topologically nontrivial half-Heusler semimetals

209Bi nuclear magnetic resonance (NMR) spectroscopy was employed to probe potential spin-orbit effects on orbital diamagnetism in YPtBi and YPdBi crystals. The observed opposite sign and temperature dependent magnitude of 209Bi NMR shifts of both crystals reveal experimental signatures of enhanced orbital diamagnetism induced by spin-orbit interactions. This investigation indicates that NMR isotropic shifts might be beneficial in search of interesting spin-electronic phases among a vast number of topological nontrivial half-Heusler semimetals.

cond-mat.str-el↗

arXiv2014

Weak Antilocalization Effect and Noncentrosymmetric Superconductivity in a Topologically Nontrivial Semimetal LuPdBi

A large number of half-Heusler compounds have been recently proposed as three-dimensional (3D) topological insulators (TIs) with tunable physical properties.However, no transport measurements associated with the topological surface states have been observed in these half-Heusler candidates due to the dominating contribution from bulk electrical conductance. Here we show that, by reducing the mobility of bulk carriers, a two-dimensional (2D) weak antilocalization (WAL) effect, one of the hallmarks of topological surface states, was experimentally revealed from the tilted magnetic field dependence of magnetoconductance in a topologically nontrivial semimetal LuPdBi. Besides the observation of a 2D WAL effect, a superconducting transition was revealed at Tc~1.7 K in the same bulk LuPdBi. Quantitative analysis within the framework of a generalized BCS theory leads to the conclusion that the noncentrosymmetric superconductivity of LuPdBi is fully gapped with a possibly unconventional pairing character. The co-existence of superconductivity and the transport signature of topological surface states in the same bulk alloy suggests that LuPdBi represents a very promising candidate as a topological superconductor.

cond-mat.str-el↗

arXiv2013

Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in Single Crystals of YPdBi Heusler Topological Insulators

We report the observation of a large linear magnetoresistance (MR) and Shubnikov-de Hass (SdH) quantum oscillations in single crystals of YPdBi Heusler topological insulators. Owning to the successfully obtained the high-quality YPdBi single crystals, large non-saturating linear MR of as high as 350% at 5K and over 120% at 300 K under a moderate magnetic field of 7 T is observed. In addition to the large, field-linear MR, the samples exhibit pronounced SdH quantum oscillations at low temperature. Analysis of the SdH data manifests that the high-mobility bulk electron carriers dominate the magnetotransport and are responsible for the observed large linear MR in YPdBi crystals. These findings imply that the Heusler-based topological insulators have superiorities for investigating the novel quantum transport properties and developing the potential applications.

cond-mat.mtrl-sci↗

arXiv2012

Compensation effect and magnetostriction in CoCr2-xFexO4

The magnetic compensation and magnetostriction properties in Fe doped CoCr2O4 samples have been investigated. Structural and magnetic measurements imply that the doped Fe3+ ions initially occupy the B1(Cr) sites when x<0.1, and then mainly take the A(Co) sites. This behaviour results in a role conversion of magnetic contributors and a composition compensation between two competitively magnetic sublattices at x=0.1. Temperature dependence compensation has also been found in the samples with x=0.1~0.22, with the compensation temperature in the range of 40~104 K. The Fe3+ doping also modulates the exchange interaction of the system and prevents the formation of long range conical order of spins. The magnetoelectric transition temperature at 23K in CoCr2O4 is shifted to lower temperature by increasing the dopants. The magnetostriction effect in this system has been observed for the first time. The strain has a maximum value of about 280ppm at x=0.4. The magnetostriction is in consistent with the behaviour of the two magnetic compensations.

cond-mat.mtrl-sci↗

arXiv2012

Thickness-dependent structural, magnetic and transport properties of epitaxial Co2FeAl Heusler alloy thin films

We report on a systematic study of the structural, magnetic properties and the anomalous Hall effect, in the Heusler alloy Co2FeAl (CFA) epitaxial films on MgO(001), as a function of film thickness. It was found that the epitaxial CFA films show a highly ordered B2 structure with an in-plane uniaxial magnetic anisotropy. An analysis of the electrical transport properties reveals that the lattice and magnon scattering contributions to the longitudinal resistivity. Independent on the thickness of films, the anomalous Hall resistivity of CFA films is found to be dominated by skew scattering only. Moreover, the anomalous Hall resistivity shows weakly temperature dependent behavior, and its absolute value increases as the thickness decreases. We attribute this temperature insensitivity in the anomalous Hall resistivity to the weak temperature dependent of tunneling spin-polarization in the CFA films, while the thickness dependence behavior is likely due to the increasing significance of interface or free surface electronic states.

cond-mat.mtrl-sci↗

arXiv2012

Fabrication and characterization of the gapless half-Heusler YPtSb thin films

Half-Heusler YPtSb thin films were fabricated by magnetron co-sputtering method on MgO-buffered SiO2/Si(001) substrates. X-ray diffraction pattern and Energy dispersive X-ray spectroscopy confirmed the high-quality growth and stoichiometry. The temperature dependence of the resistivity shows a semiconducting-type behavior down to low temperature. The Hall mobility was determined to be 450 cm2/Vs at 300K, which is much higher than the bulk value (300 cm2/Vs). In-plane magnetoresistance (MR) measurements with fields applied along and perpendicular to the current direction show opposite MR signs, which suggests the possible existence of the topological surface states.

cond-mat.mtrl-sci↗

arXiv2012

Stable magnetostructural coupling with tunable magnetoresponsive effects in hexagonal phase-transition ferromagnets

The magnetostructural coupling between the structural and the magnetic transition plays a crucial role in magnetoresponsive effects in a martensitic-transition system. A combination of various magnetoresponsive effects based on this coupling may facilitate the multifunctional applications of a host material. Here, we demonstrate a possibility to obtain a stable magnetostructural coupling in a broad temperature window from 350 to 70 K, showing tunable magnetoresponsive effects, based on simultaneous manipulation of the phase stability and the magnetic structure by suitable chemical substitution of iron in MnNiGe. The resultant MnNiGe:Fe exhibits a magnetic-field-induced martensitic transition from paramagnetic austenite to ferromagnetic martensite, featuring (i) a large volume increase, (ii) a distinct magnetization change, (iii) small thermal hysteresis and (iv) a giant negative magnetocaloric effect. The results indicate that stable magnetostructural coupling is accessible in hexagonal phase-transition systems to attain the magnetoresponsive effects with broad tunability.

cond-mat.mtrl-sci↗