arXiv subjects

Er-Jia Guo

Publications and source records attributed to Er-Jia Guo.

At least 19 recordsLinked to original sources

arXiv2026

Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering

Antiferroelectrics exhibit reversible antipolar-polar transformations, offering a compelling platform for multiple functionalities in modern nanoelectronics, yet deterministic control of antiferroelectric domains and switching pathways remain elusive. Moreover, their integration with ubiquitous silicon-based electronic devices has been limited by the structural and chemical incompatibilities of conventional oxide platforms. Here, we convert the conventional drawback of thermal mismatch into a functional advantage and realize ideal antiferroelectricity in epitaxial PbZrO3 thin films on silicon through thermal tensile-strain engineering, a strain regime unattainable on conventional perovskite substrates. Combined theoretical and experimental studies show that tensile strain stabilizes the (004)o domain, enabling a direct one-step switching, whereas compressive-strain-stabilized (240)o domains switch through intermediate ferrielectric states. The resulting films exhibit near-zero remanent polarization, square double hysteresis, nanosecond switching (~75ns), large reversible electrostrain (~0.6%) and robust operation windows. These findings provide key insights into domain-engineered ideal antiferroelectricity on silicon, opening a viable route toward high-performance antiferroelectric nano-electronic devices.

cond-mat.mtrl-sci↗

arXiv2026

$3d_{z^2}$ orbital delocalization and magnetic collapse in superconducting (La,Pr)$_3$Ni$_2$O$_{7-δ}$ films

The recent discovery of Ruddlesden--Popper (RP) nickelate thin-film superconductors has opened a new frontier in unconventional superconductivity. Its realization requires both compressive epitaxial strain and highly oxidative growth conditions, yet the microscopic pathway from the parent phase to the superconducting phase remains elusive. Here, X-ray absorption spectra and resonant inelastic X-ray scattering are employed to track this evolution by independently tuning strain and oxygen content in (La,Pr)$_3$Ni$_2$O$_{7-δ}$ thin films. We uncover a remarkable two-step narrative. First, signatures of delocalization emerge in the same way upon two independent tunings: Spectral weight transfers from a ''Upper Hubbard''-like peak to the hole-like peak associated with O $2p_z$ state, and in parallel, the initially localized Ni $3d_{z^2}$ orbital becomes more itinerant followed by the broadening and weakening of $dd$ orbital excitations. Second, as itinerancy increases, long-range spin-density-wave (SDW) order is suppressed in both intensity and correlation length, indicating direct competition with superconductivity. Yet, short-range magnons persist: they become damped but their bandwidth stays unchanged. Our results paint a coherent picture that both strain and oxygenation drive the RP bilayer nickelates towards the superconducting instability, where the O $2p_z$ and Ni $3d_{z^2}$ orbitals become delocalized. Concomitantly, the long-range magnetic order loses coherence and gets suppressed. These findings establish an orbital-selective route to RP nickelate superconductivity, in which the delocalization of the $2p_z$ and $3d_{z^2}$ orbitals and the robust short-range magnons upon the melting of SDW order are prerequisites, providing strong constraints for theory and the roadmap for designing nickelate superconductors.

cond-mat.supr-con↗

arXiv2025

Observation of square-like moire lattice and quasicrystalline order in twisted rock-salt nitrides

Twistronics, which exploits moire modulation of lattice and electronic structures in twisted bilayers, has emerged as a powerful approach to engineer novel quantum states. Recent efforts have expanded beyond two dimensional van der Waals (vdWs) crystals to more complex, strongly correlated materials, where interfacial moire effects can dominate physical properties. Here we demonstrate a generalizable route to fabricate twisted bilayers of transition metal nitrides with vdWs like interfaces, using freestanding CrN membranes as a model system. Twisted bilayer CrN (tCrN) is realized by employing cubic alkaline earth metal monoxides as sacrificial layers, enabling the assembly of clean, controllable interfaces. Electron ptychography reveals well defined, periodic square moire superlattices in tCrN. For a twist angle of 16.3 degree, we identify a nearly commensurate moire lattice with coincident Cr columns, whereas at 45 degree we uncover localized octagonal quasicrystalline order with clear self-similarity. These results establish a practical platform for twisted TMNs and open avenues to explore moire-induced atomic configurations and emergent correlated phenomena in nitride based heterostructures.

cond-mat.mtrl-sci↗

arXiv2025

Unusual strain relaxation and Dirac semimetallic behavior in epitaxial antiperovskite nitrides

Antiperovskite nitrides (X3AN) are the structural analogues to perovskite oxides, while their epitaxial growth and electronic properties remain largely unexplored. We report the successful synthesis of Ni3InN thin films on substrates with different lattice constants. First-principles phonon calculations confirm the dynamical stability of cubic phase Ni3InN, providing the basis for epitaxial synthesis. High-resolution scanning transmission electron microscopy reveals coherent (001)-oriented interfaces when Ni3InN is grown on LaAlO3 and SrTiO3, while an unexpected (011)-orientation forms on DyScO3, aligning with surface-energy predictions. Transport measurements highlight a strain-controlled Fermi-liquid behavior, correlated with variations in the Ni-3d bandwidth and hybridization. Band structure calculations reveal a dual character near the Fermi level: a high-mobility Dirac-like band and a Ni-3d manifold that drives strange-metal transport with a reduced slope compared to oxide perovskites. The formal Ni valence (+2/3) places Ni3InN in an overdoped correlated-metal regime, distinguishing from most perovskite oxides. This positions antiperovskite nitrides as a promising platform for investigating overdoped Fermi liquids and strange-metal behavior.

cond-mat.mtrl-sci↗

arXiv2025

Advancing Antiferromagnetic Nitrides via Metal Alloy Nitridation

Nitride materials, valued for their structural stability and exceptional physical properties, have garnered significant interest in both fundamental research and technological applications. The fabrication of high-quality nitride thin films is essential for advancing their use in microelectronics and spintronics. Yet, achieving single-crystal nitride thin films with excellent structural integrity remains a challenge. Here, we introduce a straightforward yet innovative metallic alloy nitridation technique for the synthesis of stable single-crystal nitride thin films. By subjecting metal alloy thin films to a controlled nitridation process, nitrogen atoms integrate into the lattice, driving structural transformations while preserving high epitaxial quality. Combining nanoscale magnetic imaging with a diamond nitrogen-vacancy (NV) probe, X-ray magnetic linear dichroism, and comprehensive transport measurements, we confirm that the nitridated films exhibit a robust antiferromagnetic character with a zero net magnetic moment. This work not only provides a refined and reproducible strategy for the fabrication of nitride thin films but also lays a robust foundation for exploring their burgeoning device applications.

cond-mat.mtrl-sci↗

arXiv2025

A single-phase epitaxially grown ferroelectric perovskite nitride

The integration of ferroelectrics with semiconductors is crucial for developing functional devices, such as field-effect transistors, tunnel junctions, and nonvolatile memories. However, the synthesis of high-quality single-crystalline ferroelectric nitride perovskites has been limited, hindering a comprehensive understanding of their switching dynamics and potential applications. Here we report the synthesis and characterizations of epitaxial single-phase ferroelectric cerium tantalum nitride (CeTaN3) on both oxides and semiconductors. The polar symmetry of CeTaN3 was confirmed by observing the atomic displacement of central ions relative to the center of the TaN6 octahedra, as well as through optical second harmonic generation. We observed switchable ferroelectric domains in CeTaN3 films using piezo-response force microscopy, complemented by the characterization of square-like polarization-electric field hysteresis loops. The remanent polarization of CeTaN3 reaches approximately 20 uC/cm2 at room temperature, consistent with theoretical calculations. This work establishes a vital link between ferroelectric nitride perovskites and their practical applications, paving the way for next-generation information and energy-storage devices with enhanced performance, scalability, and manufacturability.

cond-mat.mtrl-sci↗

arXiv2025

Designing Optimal Distorted-Octahedra Superlattices for Strong Topological Hall Effect

Topologically protected spin states hold great promise for applications in next generation of memory circuits and spintronic devices. These intriguing textures typically emerge in bulk materials or heterostructures with broken inversion symmetry, accompanied by an enhanced Dzyaloshinskii-Moriya interaction (DMI). In this study, we successfully induced the topological Hall effect (THE) in atomically designed (DyScO3)n/(SrRuO3)n (DnSn) superlattices over a significant range of temperatures (10~120K) and thicknesses (16~40nm). Using magnetic force microscopy (MFM), we observed the formation and stability of magnetic domains, such as topological skyrmions. By precisely controlling the interlayer thickness (n) and biaxial strain, we elucidated the mechanisms underlying the modulation and induction of magnetic topological states. Supporting evidence was provided by scanning transmission electron microscopy (STEM) and X-ray absorption spectroscopy (XAS), thereby lending further credence to our conclusions. These heterostructures offer a universal method for exploring topological phenomena driven by distorted octahedra, while enhancing the integrability and addressability of topologically protected functional devices.

cond-mat.mtrl-sci↗

arXiv2025

Deteriorated Interlayer Coupling in Twisted Bilayer Cobaltites

A wealth of remarkable behaviors is observed at the interfaces between magnetic oxides due to the coexistence of Coulomb repulsion and interatomic exchange interactions. While previous research has focused on bonded oxide heterointerfaces, studies on magnetism in van der Waals interfaces remain rare. In this study, we stacked two freestanding cobaltites with precisely controlled twist angles. Scanning transmission electron microscopy revealed clear and ordered moiré patterns, which exhibit an inverse relationship with the twist angle. We found that the Curie temperature in the twisted region is reduced by approximately 13 K compared to the single-layer region using nitrogen-vacancy (NV) magnetometry. This phenomenon may be related to the weakening of the orbital hybridization between oxygen ions and transition metal ions in the unbonded interfaces. Our findings suggest a potential avenue for modulating magnetic interactions in correlated systems through twist, providing opportunities for the discovery of unknown quantum states.

cond-mat.mtrl-sci↗

arXiv2025

Charge transfer induced insulating state at antiperovskite/perovskite heterointerfaces

Heterointerfaces have been pivotal in unveiling extraordinary interfacial properties and enabling multifunctional material platforms. Despite extensive research on all-oxide interfaces, heterointerfaces between different material classes, such as oxides and nitrides, remain underexplored. Here we present the fabrication of a high-quality Dirac metal antiperovskite Ni3InN, characterized by an extremely low temperature coefficient of resistivity, approximately 1.8*10^-8 Ω*cm/K, over a broad temperature range. Atomically sharp heterointerfaces between Ni3InN and SrVO3 were constructed, revealing intriguing interfacial phenomena. Leveraging layer-resolved scanning transmission electron microscopy and electron energy loss spectroscopy, we identified pronounced charge transfer across the well-ordered interface. Remarkably, this interfacial electron transfer from Ni3InN to SrVO3 induces an insulating interfacial layer and an emergent magnetic moment within the Ni3InN layer, consistent with first-principles calculations. These findings pave the way for novel electronic and spintronic applications by enabling tunable interfacial properties in nitride/oxide systems.

cond-mat.mtrl-sci↗

arXiv2024

Confined Magnetization at the Sublattice-Matched Ruthenium Oxide Heterointerface

Creating a heterostructure by combining two magnetically and structurally distinct ruthenium oxides is a crucial approach for investigating their emergent magnetic states and interactions. Previously, research has predominantly concentrated on the intrinsic properties of the ferromagnet SrRuO3 and recently discovered altermagnet RuO2 solely. Here, we engineered an ultrasharp sublattice-matched heterointerface using pseudo-cubic SrRuO3 and rutile RuO2, conducting an in-depth analysis of their spin interactions. Structurally, to accommodate the lattice symmetry mismatch, the inverted RuO2 layer undergoes an in-plane rotation of 18 degrees during epitaxial growth on SrRuO3 layer, resulting in an interesting and rotational interface with perfect crystallinity and negligible chemical intermixing. Performance-wise, the interfacial layer of 6 nm in RuO2 adjacent to SrRuO3 exhibits a nonzero magnetic moment, contributing to an enhanced anomalous Hall effect (AHE) at low temperatures. Furthermore, our observations indicate that, in contrast to SrRuO3 single layers, the AHE of [(RuO2)15/(SrRuO3)n] heterostructures shows nonlinear behavior and reaches its maximum when the SrRuO3 thickness reaches tens of nm. These results suggest that the interfacial magnetic interaction surpasses that of all-perovskite oxides (~5-unit cells). This study underscores the significance and potential applications of magnetic interactions based on the crystallographic asymmetric interfaces in the design of spintronic devices.

cond-mat.mtrl-sci↗

arXiv2023

Metal-to-insulator transition in oxide semimetals by anion doping

Oxide semimetals exhibiting both nontrivial topological characteristics stand as exemplary parent compounds and multiple degrees of freedom, offering great promise for the realization of novel electronic states. In this study, we present compelling evidence of profound structural and transport phase shifts in a recently uncovered oxide semimetal, SrNbO3, achieved through effective in-situ anion doping. Notably, a remarkable increase in resistivity of more than three orders of magnitude at room temperature is observed upon nitrogen-doping. The extent of electronic modulation in SrNbO3 is strongly correlated with the misfit strain, underscoring its phase instability to both chemical doping and crystallographic symmetry variations. Using first-principles calculations, we discern that elevating the level of nitrogen doping induces an upward shift in the conductive bands of SrNbO3-dNd. Consequently, a transition from a metallic state to an insulating state becomes apparent as the nitrogen concentration reaches a threshold of 1/3. This investigation sheds light on the potential of anion engineering in oxide semimetals, offering pathways for manipulating their physical properties. These insights hold promise for future applications that harness these materials for tailored functionalities.

cond-mat.mtrl-sci↗

arXiv2023

Strain mediated phase crossover in Ruddlesden Popper nickelates

Recent progress on the signatures of pressure-induced high temperature superconductivity in Ruddlesden Popper (RP) nickelates (Lan+1NinO3n+1) has attracted growing interest in both theoretical calculations and experimental efforts. The fabrication of high-quality single crystalline RP nickelate thin films is critical for possible reducing the superconducting transition pressure and advancing applications in microelectronics in the future. In this study, we report the observations of an active phase transition in RP nickelate films induced by misfit strain. We found that RP nickelate films favor the perovskite structure (n = infinite) under tensile strains, while compressive strains stabilize the La3Ni2O7 (n = 2) phase. The selection of distinct phases is governed by the strain dependent formation energy and electronic configuration. In compressively strained La3Ni2O7, we experimentally determined splitting energy is ~0.2 eV and electrons prefer to occupy in-plane orbitals. First principles calculations unveil a robust coupling between strain effects and the valence state of Ni ions in RP nickelates, suggesting a dual driving force for the inevitable phase co-existence transition in RP nickelates. Our work underscores the sensitivity of RP nickelate formation to epitaxial strain, presenting a significant challenge in fabricating pure-phase RP nickelate films. Therefore, special attention to stacking defects and grain boundaries between different RP phases is essential when discussing the pressure-induced superconductivity in RP nickelates.

cond-mat.supr-con↗

arXiv2023

Super-tetragonal Sr4Al2O7: a versatile sacrificial layer for high-integrity freestanding oxide membranes

Releasing the epitaxial oxide heterostructures from substrate constraints leads to the emergence of various correlated electronic phases and paves the way for integrations with advanced semiconductor technologies. Identifying a suitable water-soluble sacrificial layer, compatible with the high-quality epitaxial growth of oxide heterostructures, is currently the key to the development of large-scale freestanding oxide membranes. In this study, we unveil the super-tetragonal Sr4Al2O7 (SAOT) as a promising water-soluble sacrificial layer. The distinct low-symmetric crystal structure of SAOT enables a superior capability to sustain epitaxial strain, thus allowing for broad tunability in lattice constants. The resultant structural coherency and defect-free interface in perovskite ABO3/SAOT heterostructures effectively restrain crack formations during the water-assisted release of freestanding oxide membranes. For a variety of non-ferroelectric oxide membranes, the crack-free areas can span up to a few millimeters in length scale. These compelling features, combined with the inherent high-water solubility, make SAOT a versatile and feasible sacrificial layer for producing high-quality freestanding oxide membranes, thereby boosting their potential for innovative oxide electronics and flexible device designs.

cond-mat.mtrl-sci↗

arXiv2023

Syntropic spin alignment at the interface between ferromagnetic and superconducting nitrides

The magnetic correlations at the superconductor/ferromagnet (S/F) interfaces play a crucial role in realizing dissipation-less spin-based logic and memory technologies, such as triplet-supercurrent spin-valves and "π" Josephson junctions. Here we report the coexistence of an induced large magnetic moment and a crypto ferromagnetic state at high-quality nitride S/F interfaces. Using polarized neutron reflectometry and d. c. SQUID measurements, we quantitatively determined the magnetization profile of S/F bilayer and confirmed the induced magnetic moment in the adjacent superconductor only exists below TC. Interestingly, the direction of the induced moment in the superconductors was unexpectedly parallel to that in the ferromagnet, which contrasts with earlier findings in S/F heterostructures based on metals or oxides. The first-principles calculations verify the observed unusual interfacial spin texture is caused by the Heisenberg direct exchange coupling through d orbital overlapping and severe charge transfer across the interfaces. Our work establishes an incisive experimental probe for understanding the magnetic proximity behavior at S/F interfaces and provides a prototype epitaxial building block for superconducting spintronics.

cond-mat.supr-con↗

arXiv2023

Quasi One-Dimensional Ising-like Antiferromagnetism in the Rare-earth Perovskite Oxide TbScO$_3$

The rare-earth perovskite TbScO$_3$ has been widely used as a substrate for the growth of epitaxial ferroelectric and multiferroic thin films, while its detailed low-temperature magnetic properties were rarely reported. In this paper, we performed detailed magnetization, specific heat and single crystal neutron scattering measurements, along with the crystalline electric field calculations to study the low-temperature magnetic properties of TbScO$_3$. All our results suggest the magnetic Tb$^{3+}$ has an Ising-like pseudo-doublet ground state at low temperatures. Due to the constrain of local point symmetry, these Tb$^{3+}$ Ising moments are confined in the $ab$ plane with a tilt angle of $φ= \pm48^{\mathrm{o}}$ to the $a$ axis. In zero field, the system undergoes an antiferromagnetic phase transition at $T_{\mathrm{N}}=2.53$ K, and forms a $G_xA_y$ noncollinear magnetic structure below $T_{\mathrm{N}}$. We find the dipole-dipole interactions play an important role to determine the magnetic ground state, which are also responsible for the quasi-one-dimensional magnetism in TbScO$_3$. The significant anisotropic diffuse scatterings further confirm the quasi-one-dimensional magnetism along the $c$ axis. The magnetic phase diagram with the field along the easy $b$ axis is well established. In addition to the $G_xA_y$ antiferromagnetic state, there is an exotic field-induced phase emerged near the critical field $B_{\mathrm{c}}\simeq0.7$ T, where three-dimensional magnetic order is suppressed but strong one-dimensional correlations may still exist.

cond-mat.str-el↗

arXiv2023

Spin State Disproportionation in Insulating Ferromagnetic LaCoO3 Epitaxial Thin Films

The origin of insulating ferromagnetism in epitaxial LaCoO3 films under tensile strain remains elusive despite extensive research efforts have been devoted. Surprisingly, the spin state of its Co ions, the main parameter of its ferromagnetism, is still to be determined. Here, we have systematically investigated the spin state in epitaxial LaCoO3 thin films to clarify the mechanism of strain induced ferromagnetism using element-specific x-ray absorption spectroscopy and dichroism. Combining with the configuration interaction cluster calculations, we unambiguously demonstrate that Co3+ in LaCoO3 films under compressive strain (on LaAlO3 substrate) are practically a low spin state, whereas Co3+ in LaCoO3 films under tensile strain (on SrTiO3 substrate) have mixed high spin and low spin states with a ratio close to 1:3. From the identification of this spin state ratio, we infer that the dark strips observed by high-resolution scanning transmission electron microscopy indicate the position of Co3+ high spin state, i.e., an observation of a spin state disproportionation in tensile-strained LaCoO3 films. This consequently explains the nature of ferromagnetism in LaCoO3 films.

cond-mat.mtrl-sci↗

arXiv2023

Miniature Magnetic Nano islands in a Morphotropic Cobaltite Matrix

High-density magnetic memories are key components in spintronics, quantum computing, and energy-efficient electronics. Reduced dimensionality and magnetic domain stability at the nanoscale are essential for the miniaturization of magnetic storage units. Yet, inducing magnetic order, and selectively tuning spin-orbital coupling at specific locations have remained challenging. Here we demonstrate the construction of switchable magnetic nano-islands in a nonmagnetic matrix based on cobaltite homo-structures. The magnetic and electronic states are laterally modified by epitaxial strain, which is regionally controlled by freestanding membranes. Atomically sharp grain boundaries isolate the crosstalk between magnetically distinct regions. The minimal size of magnetic nano-islands reaches 35 nm in diameter, enabling an areal density of 400 Gbit per inch square. Besides providing an ideal platform for precisely controlled read and write schemes, this methodology can enable scalable and patterned memories on silicon and flexible substrates for various applications.

cond-mat.mtrl-sci↗

arXiv2022

Dimensionality-confined superconductivity within SrNbO3-SrTiO3 heterostructures

Interfaces between transition-metal oxides are able to host two-dimensional electron gases (2DEGs) and exhibit exotic quantum phenomena. Here we report the observation of superconductivity below 230 mK for the heterostructure composed of SrNbO3 (SNO) and SrTiO3 (STO). Different from some other counterparts with two insulators, the metallic SNO provides a novel mechanism to form a quasi 2DEG by charge transfer from bulk towards interface under strain. The superconductivity, residing within the strained SNO layer near the interface, is contributed by an electron system with record-low carrier density. Notably, although embedded in a normal metallic layer with a carrier density 4 to 5 orders higher, the electron system is still uniquely well-protected to retain high mobility and lies deep in extreme quantum regime.

cond-mat.supr-con↗