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arXiv · 2504.13401

Charge transfer induced insulating state at antiperovskite/perovskite heterointerfaces

Ting Cui·Ying Zhou·Qianying Wang·Dongke Rong·Haitao Hong·Axin Xie·Jun-Jie Zhang·Qinghua Zhang·Can Wang·Chen Ge·Lin Gu·Shanmin Wang·Kuijuan Jin·Shuai Dong·Er-Jia Guo
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Abstract

Heterointerfaces have been pivotal in unveiling extraordinary interfacial properties and enabling multifunctional material platforms. Despite extensive research on all-oxide interfaces, heterointerfaces between different material classes, such as oxides and nitrides, remain underexplored. Here we present the fabrication of a high-quality Dirac metal antiperovskite Ni3InN, characterized by an extremely low temperature coefficient of resistivity, approximately 1.8*10^-8 {\Omega}*cm/K, over a broad temperature range. Atomically sharp heterointerfaces between Ni3InN and SrVO3 were constructed, revealing intriguing interfacial phenomena. Leveraging layer-resolved scanning transmission electron microscopy and electron energy loss spectroscopy, we identified pronounced charge transfer across the well-ordered interface. Remarkably, this interfacial electron transfer from Ni3InN to SrVO3 induces an insulating interfacial layer and an emergent magnetic moment within the Ni3InN layer, consistent with first-principles calculations. These findings pave the way for novel electronic and spintronic applications by enabling tunable interfacial properties in nitride/oxide systems.

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Ting Cui, Ying Zhou, Qianying Wang, Dongke Rong, Haitao Hong, Axin Xie, Jun-Jie Zhang, Qinghua Zhang, Can Wang, Chen Ge, Lin Gu, Shanmin Wang, Kuijuan Jin, Shuai Dong, Er-Jia Guo. 2025-04-18. Charge transfer induced insulating state at antiperovskite/perovskite heterointerfaces. https://arxiv.org/abs/2504.13401

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