arXiv subjects

Erik A. Henriksen

Publications and source records attributed to Erik A. Henriksen.

At least 19 recordsLinked to original sources

arXiv2026

Simultaneous measurement of thermal conductivity and specific heat in quasi-two-dimensional membranes using the 3ω method

Toward measuring the thermal properties of exfoliated atomically thin materials, we demonstrate simultaneous measurements of the thermal conductivity and specific heat in suspended membranes. We use the 3ω technique applied to quasi-two-dimensional silicon nitride membranes having a metal line heater patterned on the surface to both deliver heat and directly measure the thermal impedance of the membrane at the heating frequency, Z(2ω). We derive an expression for the complex thermal impedance as a function of frequency, approximating the actual rectangular membranes with a one dimensional model. The derivation accounts for potential parasitic heat loss mechanisms including conduction along the heater line, and by the gas load in an imperfect vacuum. Qualitatively, the thermal impedance response resembles a low-pass filter, owing to the combination of the total thermal resistance and total specific heat. Fitting Z(2ω) to measurements across a few decades in frequency, we extract values of the thermal conductivity and specific heat of silicon nitride in agreement with literature values. We also study the dependence on the heating current, and compare to measurements of the thermal conductivity at zero frequency.

cond-mat.mtrl-sci↗

arXiv2025

Real-time Monitoring of Neon Film Growth for Electron-on-Neon Qubits

Electron-on-neon (eNe) charge states coupled to superconducting circuits are a promising platform for quantum computing. Control over the formation of these charge states requires techniques to track and control the growth of solid Ne films on the circuit surface. We demonstrate a real-time Ne film-growth monitor using high-transition-temperature (high-$T_c$) YBCO microwave resonators. The high $T_c$ enables tracking of the film thickness near Ne's triple temperature and below. Across more than 300 solidification experiments, we find that the final Ne thickness varies stochastically from a few nm to a few $μ$m for films solidified from the liquid phase. By increasing the driving power in the resonator, we consistently reduce the final thickness to below 100 nm. These results represent an important step toward controlled formation of Ne films for eNe qubits and highlight the broader utility of high-$T_c$ resonators for hybrid quantum systems.

quant-ph↗

arXiv2025

Lessons from $α$-RuCl3 for pursuing quantum spin liquid physics in atomically thin materials

Quantum spin liquids can arise from Kitaev magnetic interactions, and exhibit fractionalized excitations with the potential for a topological form of quantum computation. This review surveys recent experimental and theoretical progress on the pursuit of phenomena related to Kitaev magnetism in layered and exfoliatable materials, which offer numerous opportunities to apply powerful techniques from the field of atomically thin materials. We primarily focus on the antiferromagnetic Mott insulator $α$-RuCl3, which exhibits Kitaev couplings and is readily exfoliated to single- or few-layer sheets, and thus serves as a test bed for developing probes of Kitaev phenomena in atomically thin materials and devices. We introduce the Kitaev model and how it is realized in $α$-RuCl3 and other material candidates; and cover $α$-RuCl3 synthesis and fabrication into van der Waals heterostructure devices. A key discovery is a work-function-mediated charge transfer that heavily dopes both the $α$-RuCl3 and proximate materials, and can enhance Kitaev interactions by up to 50%. We further discuss a wide range of recent results in electronic transport and optical and tunneling spectroscopies of $α$-RuCl3 devices. The experimental techniques and theoretical insights developed for $α$-RuCl3 establish a framework for discovering and engineering superior two-dimensional Kitaev materials that may ultimately realize elusive quantum spin liquid phases.

cond-mat.str-el↗

arXiv2025

Quantum noise spectroscopy of superconducting dynamics in thin film Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$

Characterizing the low-energy dynamics of quantum materials is crucial to our understanding of strongly correlated electronic states. Yet, it remains experimentally challenging to investigate such dynamics with high spectroscopic resolution in both frequency and momentum space, particularly in two-dimensional correlated systems. Here, we leverage Nitrogen-Vacancy (NV) centers in diamond as a powerful and non-invasive tool to study thin-film Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (BSCCO), revealing several distinct dynamical phenomena across the superconducting phase diagram. At zero magnetic field and low temperatures, NV depolarization ($T_1$) noise spectroscopy captures the low-frequency (GHz-scale) magnetic noise generated by nodal superconducting quasiparticle excitations, in agreement with Bardeen-Cooper-Schrieffer (BCS) mean-field theory. Near the critical temperature $T_c \approx 90$ K, supercurrent-fluctuation-induced noise leads to a sharp reduction of the NV $T_1$. By carefully analyzing the temperature-scaling of $T_1$, we observe clear deviations from the BCS prediction, reflecting the importance of order parameter fluctuations and enabling the determination of both static and dynamical critical exponents. When a small field is applied, we detect a broad and asymmetric reduction of NV $T_1$ near $T_c$; the field-induced smearing of the transition unveils the presence of a vortex liquid phase. Finally, NV decoherence ($T_2$) noise spectroscopy allows us to characterize magnetic noise at even lower MHz-scale frequencies and obtain evidence for complex vortex-solid fluctuations well below $T_c$. Our results establish quantum noise spectroscopy as a versatile platform for probing dynamical phenomena in superconductors, with frequency and length scales complementary to existing techniques.

cond-mat.supr-con↗

arXiv2024

Graphene calorimetric single-photon detector

Single photon detectors (SPDs) are essential technology in quantum science, quantum network, biology, and advanced imaging. To detect the small quantum of energy carried in a photon, conventional SPDs rely on energy excitation across either a semiconductor bandgap or superconducting gap. While the energy gap suppresses the false-positive error, it also sets an energy scale that can limit the detection efficiency of lower energy photons and spectral bandwidth of the SPD. Here, we demonstrate an orthogonal approach to detect single near-infrared photons using graphene calorimeters. By exploiting the extremely low heat capacity of the pseudo-relativistic electrons in graphene near its charge neutrality point, we observe an electron temperature rise up to ~2 K using a hybrid Josephson junction. In this proof-of-principle experiment, we achieve an intrinsic quantum efficiency of 87% (75%) with dark count < 1 per second (per hour) at operation temperatures as high as 1.2 K. Our results highlight the potential of electron calorimetric SPDs for detecting lower-energy photons from the mid-IR to microwave regimes, opening pathways to study space science in far-infrared regime, to search for dark matter axions, and to advance quantum technologies across a broader electromagnetic spectrum.

cond-mat.mes-hall↗

arXiv2024

Infrared spectroscopy of phase transitions in the lowest Landau levels of bilayer graphene

We perform infrared magneto-spectroscopy of Landau level (LL) transitions in dual-gated bilayer graphene. At $ν=4$ when the zeroth LL (octet) is filled, two resonances are observed indicating the opening of a gap. At $ν=0$ when the octet is half-filled, multiple resonances disperse non-monotonically with increasing displacement field, $D$, perpendicular to the sheet, showing a phase transition at modest displacement fields from a canted anti-ferromagnet (CAFM) to the layer-polarized state, with a gap that opens linearly in $D$. When $D=0$ and $ν$ is varied, resonances at $\pmν$ show an electron-hole asymmetry with multiple line splittings as the octet is progressively filled. The $ν=4$ data show good agreement with predictions from a mean-field Hartree-Fock calculation when accounting for multiple tight-binding terms in a four-band model of bilayer graphene. However even by incorporating a valley interaction anisotropy tuned to the CAFM ground state, only partial agreement is found at $ν=0$. Our results suggest additional physics is required to understand bilayer graphene at half-filling.

cond-mat.mes-hall↗

arXiv2024

Performance limits due to thermal transport in graphene single-photon bolometers

In high-sensitivity bolometers and calorimeters, the photon absorption often occurs at a finite distance from the temperature sensor to accommodate antennas or avoid the degradation of superconducting circuitry exposed to radiation. As a result, thermal propagation from the input to the temperature readout can critically affect detector performance. In this report we model the performance of a graphene bolometer, accounting for electronic thermal diffusion and dissipation via electron-phonon coupling at low temperatures in three regimes: clean, supercollision, and resonant scattering. Our results affirm the feasibility of a superconducting readout without Cooper-pair breaking by mid- and near-infrared photons, and provide a recipe for designing graphene absorbers for calorimetric single-photon detectors. We investigate the tradeoff between the input-readout distance and detector efficiency, and predict an intrinsic timing jitter of ~2.7 ps. Based on our result, we propose a spatial-mode-resolving photon detector to increase communication bandwidth.

cond-mat.mes-hall↗

arXiv2024

Isotope engineering for spin defects in van der Waals materials

Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal boron nitride (hBN), we grow isotopically purified $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ crystals. Compared to $\mathrm{V}_{\mathrm{B}}^-$ in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded $\mathrm{V}_{\mathrm{B}}^-$ spin transitions as well as extended coherence time $T_2$ and relaxation time $T_1$. For quantum sensing, $\mathrm{V}_{\mathrm{B}}^-$ centers in our $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ samples exhibit a factor of $4$ ($2$) enhancement in DC (AC) magnetic field sensitivity. For additional quantum resources, the individual addressability of the $\mathrm{V}_{\mathrm{B}}^-$ hyperfine levels enables the dynamical polarization and coherent control of the three nearest-neighbor ${}^{15}\mathrm{N}$ nuclear spins. Our results demonstrate the power of isotope engineering for enhancing the properties of quantum spin defects in hBN, and can be readily extended to improving spin qubits in a broad family of van der Waals materials.

quant-ph↗

arXiv2023

Coherent dynamics of strongly interacting electronic spin defects in hexagonal boron nitride

Optically active spin defects in van der Waals materials are promising platforms for modern quantum technologies. Here we investigate the coherent dynamics of strongly interacting ensembles of negatively charged boron-vacancy ($\mathrm{V}_{\mathrm{B}}^-$) centers in hexagonal boron nitride (hBN) with varying defect density. By employing advanced dynamical decoupling sequences to selectively isolate different dephasing sources, we observe more than 5-fold improvement in the measured coherence times across all hBN samples. Crucially, we identify that the many-body interaction within the $\mathrm{V}_{\mathrm{B}}^-$ ensemble plays a substantial role in the coherent dynamics, which is then used to directly estimate the concentration of $\mathrm{V}_{\mathrm{B}}^-$. We find that at high ion implantation dosage, only a small portion of the created boron vacancy defects are in the desired negatively charged state. Finally, we investigate the spin response of $\mathrm{V}_{\mathrm{B}}^-$ to the local charged defects induced electric field signals, and estimate its ground state transverse electric field susceptibility. Our results provide new insights on the spin and charge properties of $\mathrm{V}_{\mathrm{B}}^-$, which are important for future use of defects in hBN as quantum sensors and simulators.

quant-ph↗

arXiv2023

Direct visualization of the charge transfer in Graphene/$α$-RuCl$_3$ heterostructure

We investigate the electronic properties of a graphene and $α$-ruthenium trichloride (hereafter RuCl$_3$) heterostructure, using a combination of experimental and theoretical techniques. RuCl$_3$ is a Mott insulator and a Kitaev material, and its combination with graphene has gained increasing attention due to its potential applicability in novel electronic and optoelectronic devices. By using a combination of spatially resolved photoemission spectroscopy, low energy electron microscopy, and density functional theory (DFT) calculations we are able to provide a first direct visualization of the massive charge transfer from graphene to RuCl$_3$, which can modify the electronic properties of both materials, leading to novel electronic phenomena at their interface. The electronic band structure is compared to DFT calculations that confirm the occurrence of a Mott transition for RuCl$_3$. Finally, a measurement of spatially resolved work function allows for a direct estimate of the interface dipole between graphene and RuCl$_3$. The strong coupling between graphene and RuCl$_3$ could lead to new ways of manipulating electronic properties of two-dimensional lateral heterojunction. Understanding the electronic properties of this structure is pivotal for designing next generation low-power opto-electronics devices.

cond-mat.mtrl-sci↗

arXiv2022

Ultra-sharp lateral $p\text{-}n$ junctions in modulation-doped graphene

We demonstrate ultra-sharp (${\lesssim}\,10\text{ nm}$) lateral $p\text{-}n$ junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The $p\text{-}n$ junction lies at the boundary between differentially-doped regions of a graphene sheet, where one side is intrinsic and the other is charge-doped by proximity to a flake of $α$-RuCl$_3$ across a thin insulating barrier. We extract the $p\text{-}n$ junction contribution to the device resistance to place bounds on the junction width. We achieve an ultra-sharp junction when the boundary between the intrinsic and doped regions is defined by a cleaved crystalline edge of $α$-RuCl$_3$ located 2 nm from the graphene. Scanning tunneling spectroscopy in heterostructures of graphene, hexagonal boron nitride, and $α$-RuCl$_3$ shows potential variations on a sub-10 nm length scale. First principles calculations reveal the charge-doping of graphene decays sharply over just nanometers from the edge of the $α$-RuCl$_3$ flake.

cond-mat.mes-hall↗

arXiv2020

Broken symmetries and Kohn's theorem in graphene cyclotron resonance

The magnetoplasmon spectrum of Landau level transitions in hexagonal boron nitride-encapsulated graphene is explored via infrared transmission magnetospectroscopy, as a function of the filling factor at fixed magnetic field. As the lowest Landau level occupancy is increased from half-filling, a non-monotonic progression of multiple cyclotron resonance peaks is observed, with a single peak evolving into four peaks and back to two, all with linewidths of order 0.5 meV. This provides a novel window on the interplay of electron interactions with broken spin and valley symmetries in the quantum Hall regime. Analysis of the peak energies shows an indirect enhancement of spin gaps below the Fermi energy, a Dirac mass at half-filling that is nearly 50\% larger than when the lowest Landau level is completely full, and a small but clear particle-hole asymmetry. We suggest a key role is played by the boron nitride in enabling interaction-enhanced broken symmetries to be observed in graphene cyclotron resonance.

cond-mat.mes-hall↗

arXiv2020

Modulation Doping via a 2d Atomic Crystalline Acceptor

Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with \textit{ab initio} calculations establish the large work function and narrow bands of $α$-RuCl$_3$ enable modulation doping of exfoliated, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE) materials. Short-ranged lateral doping (${\leq}65\ \text{nm}$) and high homogeneity are achieved in proximate materials with a single layer of \arucl. This leads to the highest monolayer graphene (mlg) mobilities ($4,900\ \text{cm}^2/ \text{Vs}$) at these high hole densities ($3\times10^{13}\ \text{cm}^{-2}$); and yields larger charge transfer to bilayer graphene (blg) ($6\times10^{13}\ \text{cm}^{-2}$). We further demonstrate proof of principle optical sensing, control via twist angle, and charge transfer through hexagonal boron nitride (hBN).

cond-mat.mtrl-sci↗

arXiv2020

Extraordinary magnetoresistance in encapsulated monolayer graphene devices

We report a proof-of-concept study of extraordinary magnetoresistance (EMR) in devices of monolayer graphene encapsulated in hexagonal boron nitride, having metallic edge contacts and a central metal shunt. Extremely large EMR values, $MR=(R(B) - R_0) / R_0\sim 10^5$, are achieved in part because $R_0$ approaches or crosses zero as a function of the gate voltage, exceeding that achieved in high mobility bulk semiconductor devices. We highlight the sensitivity, $dR/dB$, which in two-terminal measurements is the highest yet reported for EMR devices, and in particular exceeds prior results in graphene-based devices by a factor of 20. An asymmetry in the zero-field transport is traced to the presence of $pn$-junctions at the graphene-metal shunt interface.

cond-mat.mes-hall↗

arXiv2019

Unexpected hole doping of graphene by osmium adatoms

The electronic transport of monolayer graphene devices is studied before and after \emph{in situ} deposition of a sub-monolayer coating of osmium adatoms. Unexpectedly, and unlike all other metallic adatoms studied to date, osmium adatoms shift the charge neutrality point to more positive gate voltages. This indicates that osmium adatoms act as electron acceptors and thus leave the graphene hole-doped. Analysis of transport data suggest that Os adatoms behave as charged impurity scatterers, albeit with a surprisingly low charge-doping efficiency. The charge neutrality point of graphene is found to vary non-monotonically with gate voltage as the sample is warmed to room temperature, suggesting that osmium diffuses on the surface but is not completely removed.

cond-mat.mes-hall↗

arXiv2019

Optically Driven Magnetic Phase Transition of Monolayer RuCl3

Strong light-matter interactions within nanoscale structures offer the possibility of optically controlling material properties. Motivated by the recent discovery of intrinsic long-range magnetic order in two-dimensional materials, which allows for the creation of novel magnetic devices of unprecedented small size, we predict that light can couple with magnetism and efficiently tune magnetic orders of monolayer ruthenium trichloride (RuCl3). First-principles calculations show that both free carriers and optically excited electron-hole pairs can switch monolayer RuCl3 from the proximate spin-liquid phase to a stable ferromagnetic phase. Specifically, a moderate electron-hole pair density (on the order of 10^13 cm-2) can significantly stabilize the ferromagnetic phase by 10 meV/f.u. in comparison to the zigzag phase, so that the predicted ferromagnetism can be driven by optical pumping experiments. Analysis shows that this magnetic phase transition is driven by a combined effect of doping-induced lattice strain and itinerant ferromagnetism. According to the Ising-model calculation, we find that the Curie temperature of the ferromagnetic phase can be increased significantly by raising carrier or electron-hole pair density. This enhanced opto-magnetic effect opens new opportunities to manipulate two-dimensional magnetism through non-contact, optical approaches.

cond-mat.mes-hall↗

arXiv2018

Many-particle effects in the cyclotron resonance of encapsulated monolayer graphene

We study the infrared cyclotron resonance of high mobility monolayer graphene encapsulated in hexagonal boron nitride, and simultaneously observe several narrow resonance lines due to interband Landau level transitions. By holding the magnetic field strength, $B$, constant while tuning the carrier density, $n$, we find the transition energies show a pronounced non-monotonic dependence on the Landau level filling factor, $ν\propto n/B$. This constitutes direct evidence that electron-electron interactions contribute to the Landau level transition energies in graphene, beyond the single-particle picture. Additionally, a splitting occurs in transitions to or from the lowest Landau level, which is interpreted as a Dirac mass arising from coupling of the graphene and boron nitride lattices.

cond-mat.mes-hall↗

arXiv2017

Possible Structural Transformation and Enhanced Magnetic Fluctuations in Exfoliated $α$-RuCl$_3$

We present initial Raman spectroscopy experiments on exfoliated flakes of $α$-RuCl$_3$, from tens of nm thick down to single layers. Besides unexpectedly finding this material to be air stable, in the thinnest layers we observe the appearance with decreasing temperature of a symmetry-forbidden mode in crossed polarization, along with an anomalous broadening of a mode at 164 cm$^{-1}$ that is known to couple to a continuum of magnetic excitations. This may be due to an enhancement of magnetic fluctuations and evidence for a distorted honeycomb lattice in single- and bi-layer samples.

cond-mat.str-el↗