arXiv subjects

Erika Garutti

Publications and source records attributed to Erika Garutti.

17 recordsLinked to original sources

arXiv2026

Comment on the preprint: First Limits on Axion Dark Matter from a DALI Prototype arXiv:2603.21951

We report on an independent assessment of the sensitivity of the DALI setup to axion-like particle (ALP) dark matter, as described in [1]. Our analysys is based on the information provided in the preprint and using the formalism developed within the MADMAX collaboration. We do not identify any mode below 12 GHz with significant coupling to the axion field to account for the reported sensitivity. We provide recommendations for assessing the axion coupling of electromagnetic modes in dielectric haloscope experiments.

hep-ex↗

arXiv2026

Effect of increased DCR on the detection of minimum-ionizing particles with SiPMs

Radiation damage to a Silicon Photomultiplier (SiPM), as it occurs during the lifetime of the planned CMS high-granularity calorimeter detector, increases the dark current and degrades the signal-to-noise separation for minimum-ionizing particles (MIPs) and their detection efficiency. To investigate these effects, a plastic scintillator tile air-coupled to a SiPM is used to detect MIPs from a 90Sr source, in a single-channel design similar to the tiles of the CMS high-granularity calorimeter upgrade. We compared the SiPM responses after actual radiation exposure with responses simulated in the laboratory by increasing the dark-count rate (DCR) through optical illumination with an LED light source. This optical method induces no structural damage or deep defects, thus isolating the effect of increased dark-count rate. Our results show that both radiation-induced damage and LED-induced dark-count rate increases lead to similar reductions in the MIP signal and the signal-to-noise ratio. This indicates that the primary factor for the performance degradation is the elevated dark-count rate itself, rather than additional defects in the silicon. The results demonstrate that the key effects of radiation damage on SiPMs can be effectively replicated using controlled optical illumination, providing a practical and easily accessible approach for evaluating and optimizing SiPM performance under radiation-like conditions in the laboratory.

physics.ins-det↗

arXiv2026

Constellation: The Autonomous Control and Data Acquisition System for Dynamic Experimental Setups

The operation of instruments and detectors in laboratory or beamline environments presents a complex challenge, requiring stable operation of multiple concurrent devices, often controlled by separate hardware and software solutions. These environments frequently undergo modifications, such as the inclusion of different auxiliary devices depending on the experiment or facility, adding further complexity. The successful management of such dynamic configurations demands a flexible and robust system capable of controlling data acquisition, monitoring experimental setups, enabling seamless reconfiguration, and integrating new devices with limited effort. This paper presents Constellation, a flexible and network-distributed control and data acquisition software framework tailored to laboratory and beamline environments, that addresses the limitations of existing solutions. The framework is designed with a focus on extensibility, providing a streamlined interface for instrument integration. It supports efficient system setup via network discovery mechanisms, promotes stability through autonomous operational features, and provides comprehensive documentation and supporting tools for operators and application developers such as controllers and logging interfaces. At the core of the architectural design is the autonomy of the individual components, called satellites, which can make independent decisions about their operation and communicate these decisions to other components. This paper introduces the design principles and framework architecture of Constellation, presents the available graphical user interfaces, shares insights from initial successful deployments, and provides an outlook on future developments and applications.

physics.ins-det↗

arXiv2025

Enhancing European Cooperation in the Search for Dark Matter

The search for dark matter is an exciting topic that is pursued in different communities over a wide range of masses and using a variety of experimental approaches. The result is a strongly correlated matrix of activities across Europe and beyond, both on the experimental and the theoretical side. We suggest to encourage and foster the collaboration of the involved institutions on technical, scientific and organisational level, in order to realise the synergies that are required to increase the impact of dark matter research and to cope with the increasing experiment sizes. The suggested network -- loosely titled "DMInfraNet" -- could be realised as a new initiative of the European strategy or be based on existing structures like iDMEu or DRD. The network can also serve as a nucleus for future joint funding proposals.

hep-ex↗

arXiv2023

Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation

In this work, the effects of $^\text{60}$Co $γ$-ray irradiation on high resistivity $p$-type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and \SI{2}{\mega Gy}. Both macroscopic ($I$--$V$, $C$--$V$) and microscopic (Thermally Stimulated Current~(TSC)) measurements were conducted to characterize the radiation-induced changes. The investigated diodes were manufactured on high resistivity $p$-type Float Zone (FZ) silicon and were further classified into two types based on the isolation technique between the pad and guard ring: $p$-stop and $p$-spray. After irradiation, the macroscopic results of current-voltage and capacitance-voltage measurements were obtained and compared with existing literature data. Additionally, the microscopic measurements focused on the development of the concentration of different radiation-induced defects, including the boron interstitial and oxygen interstitial (B$_\text{i}$O$_\text{i}$) complex, the carbon interstitial and oxygen interstitial C$_\text{i}$O$_\text{i}$ defect, the H40K, and the so-called I$_\text{P}^*$. To investigate the thermal stability of induced defects in the bulk, isochronal annealing studies were performed in the temperature range of \SI{80}{\celsius} to \SI{300}{\celsius}. These annealing processes were carried out on diodes irradiated with doses of 1 and \SI{2}{\mega Gy} and the corresponding TSC spectra were analysed. Furthermore, in order to investigate the unexpected results observed in the $C$-$V$ measurements after irradiation with high dose values, the surface conductance between the pad and guard ring was measured as a function of both dose and annealing temperature.

physics.ins-det↗

arXiv2023

Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon

This study focuses on the properties of the B$_\text{i}$O$_\text{i}$ (interstitial Boron~-~interstitial Oxygen) and C$_\text{i}$O$_\text{i}$ (interstitial Carbon~-~interstitial Oxygen) defect complexes by \SI{5.5}{\mega\electronvolt} electrons in low resistivity silicon. Two different types of diodes manufactured on p-type epitaxial and Czochralski silicon with a resistivity of about 10~$Ω\cdot$cm were irradiated with fluence values between \SI{1e15}{\per\square\centi\meter} and \SI{6e15}{\per\square\centi\meter}. Such diodes cannot be fully depleted and thus the accurate evaluation of defect concentrations and properties (activation energy, capture cross-section, concentration) from Thermally Stimulated Currents (TSC) experiments alone is not possible. In this study we demonstrate that by performing Thermally Stimulated Capacitance (TS-Cap) experiments in similar conditions to TSC measurements and developing theoretical models for simulating both types of B$_\text{i}$O$_\text{i}$ signals generated in TSC and TS-Cap measurements, accurate evaluations can be performed. The changes of the position-dependent electric field, the effective space charge density $N_\text{eff}$ profile as well as the occupation of the B$_\text{i}$O$_\text{i}$ defect during the electric field dependent electron emission, are simulated as a function of temperature. The macroscopic properties (leakage current and $N_\text{eff}$) extracted from current-voltage and capacitance-voltage measurements at \SI{20}{\celsius} are also presented and discussed

physics.app-ph↗

arXiv2023

SiPM Signal Processing via Multiple Linear Regression

This paper presents a novel approach using multiple linear regression to process transient signals from silicon photomultipliers. The method provides excellent noise suppression and pulse detection in scenarios with a high pulse count rate and superimposed pulses. Insights into its implementation and benchmark results are presented. We also show how this approach can be used to automatically detect the pulse shape from a given transient signal, providing good detection for count rates up to 90MHz. Experimental data are used to present an application where this algorithm improves charge spectrum resolution by an order of magnitude.

physics.ins-det↗

arXiv2023

PeakOTron: A Python Module for Fitting Charge Spectra of Silicon Photomultipliers

A Python program has been developed which fits a published detector-response model to SiPM charge spectra to characterise SiPMs. Spectra for SiPMs illuminated by low intensity pulsed light with Poisson-distributed number of photons and a time spread of order nanoseconds or less, can be analysed. The entire charge spectra, including the intervals in-between the photoelectron peaks, are fitted, which allows determining, in addition to the mean number of detected photons, gain, gain spread, prompt cross-talk, pedestal, and electronics noise, the dark-count rate as well as the probability and time constant of after-pulses. The starting values of the fit parameters are extracted from the charge spectra. The program performance has been evaluated using simulated charge spectra with the different SiPM parameters varied in a wide range. By analysing 100 simulated spectra for every parameter set, the biases and statistical uncertainties of the individual parameters have been determined. It is found that the parameters are precisely determined and that the entire spectra are well described, in most cases with a $χ^2$/NDF close to 1. In addition, measured spectra for two types of SiPMs for a wide range of over-voltages have been analysed. The program achieves mostly a good description of the spectra, and the parameters determined agree with the values from the producers and expectations. The program can be used for detailed analyses of single spectra, but, as it is compatible with the native \texttt{Python} multiprocessing module, also for the automatic characterisation of large samples of SiPMs.

physics.ins-det↗

arXiv2023

Study of depth-dependent charge collection profiles in irradiated pad diodes

In this work, charge collection profiles of non-irradiated and irradiated 150 $μ$m $p$-type pad diodes were measured using a 5.2 GeV electron beam traversing the diode parallel to the readout electrode. Four diodes were irradiated to 1 MeV neutron equivalent fluences of 2, 4, 8, and 12E15 {cm}^{-2} with 23 MeV protons. The Charge Collection Efficiency profiles as a function of depth are extracted by unfolding the data. The results of the measurements are compared to the simulation using three radiation damage models from literature which were tuned to different irradiation types and fluences.

physics.ins-det↗

arXiv2022

Radiation Hardness of a Wide Spectral Range SiPM with Quasi-Spherical Junction

New pixel geometries are on the rise to achieve high sensitivity in near-infrared wavelengths with silicon photomultipliers (SiPMs). We test prototypes of the tip avalanche photo-diodes, which feature a quasi-spherical p-n junction and a high photodetection efficiency over a wide spectral range, and analyze the performance after neutron irradiation. The observed increase in dark count rate is significantly smaller than for a SiPM with a conventional design, indicating a good radiation hardness of the pixel geometry.

physics.ins-det↗

arXiv2021

Depth-dependent charge collection profile of pad diodes

The collected charge of two pad diodes is measured along the diode width using a 5:2 GeV electron beam at the DESY II beam test facility. The electron beam enters parallel to the readout electrode plane and perpendicular to the edge of the diode. The position of the electron beam is reconstructed by three planes of an EUDET-type telescope. An in-situ procedure is developed to align the diode surface parallel to the electron beam. The result of these measurements is the charge collection efficiency profile as a function of depth for each diode. For a non-irradiated diode, the charge profile is uniform as a function of the beam position for bias voltages above the full-depletion, as expected. For the irradiated diode, the charge profile is non-uniform and changes as a function of bias voltage.

physics.ins-det↗

arXiv2019

A new model for the TCAD simulation of the silicon damage by high fluence proton irradiation

For the high-luminosity phase of the Large Hadron Collider (HL-LHC), at the expected position of the innermost pixel detector layer of the CMS and ATLAS experiments, the estimated equivalent neutron fluence after 3000 fb$^{-1}$ is 2$\cdot$10$^{16}$ n$_{eq}$/cm$^2$, and the IEL (Ionizing Energy Loss) dose in the SiO$_2$ 12 MGy. The optimisation of the pixel sensors and the understanding of their performance as a function of fluence and dose makes a radiation damage model for TCAD simulations, which describes the available experimental data, highly desirable. The currently available bulk-damage models are not able to describe simultaneously the measurements of dark current (I-V), capacitance-voltage (C-V) and charge collection efficiency (CCE) of pad diodes for fluences $\ge 1\cdot 10^{15}$ n$_{eq}$/cm$^2$. Therefore, for the development and validation of a new accurate bulk damage model we use I-V, C-V and CCE measurements on pad diodes available within the CMS-HPK campaign and data from samples irradiated recently with 24 GeV/c protons. For the determination of the radiation-induced damage parameters we utilise the "optimiser" of Synopsys TCAD, which allows the minimisation of the difference between the measured and simulated I-V, C-V and CCE. The outcome of this optimisation, the Hamburg Penta Trap Model (HPTM), provides a consistent and accurate description of the measurements of diodes irradiated with protons in the fluence range from 3$\cdot$10$^{14}$ n$_{eq}$/cm$^2$ to 1.3$\cdot$10$^{16}$ n$_{eq}$/cm$^2$.

physics.ins-det↗

arXiv2018

Study of point- and cluster-defects in radiation-damaged silicon

Non-ionising energy loss of radiation produces point defects and defect clusters in silicon, which result in a signifcant degradation of sensor performance. In this contribution results from TSC (Thermally Stimulated Current) defect spectroscopy for silicon pad diodes irradiated by electrons to fluences of a few $10^{14}$ cm$^{-2}$ and energies between 3.5 and 27 MeV for isochronal annealing between 80 and 280°C, are presented. A method based on SRH (Shockley-Read-Hall) statistics is introduced, which assumes that the ionisation energy of the defects in a cluster depends on the fraction of occupied traps. The dfference of ionisation energy of an isolated point defect and a fully occupied cluster, $ΔE_a$, is extracted from the TSC data. For the VOi (vacancy-oxygen interstitial) defect $ΔE_a = 0$ is found, which cofirms that it is a point defect, and validates the method for point defects. For clusters made of deep acceptors the $ΔE_a$ values for different defects are determined after annealing at 80°C as a function of electron energy, and for the irradiation with 15 MeV electrons as a function of annealing temperature. For the irradiation with 3.5 MeV electrons the value $ΔE_a = 0$ is found, whereas for the electron energies of 6 to 27 MeV $ΔE_a > 0$. This agrees with the expected threshold of about 5 MeV for cluster formation by electrons. The $ΔE_a$ values determined as a function of annealing temperature show that the annealing rate is different for different defects. A naive diffusion model is used to estimate the temperature dependencies of the diffusion of the defects in the clusters.

physics.ins-det↗

arXiv2015

Characterization studies of Silicon Photomultipliers and crystals matrices for a novel time of flight PET detector

This paper describes the characterization of crystal matrices and silicon photomultiplier arrays for a novel Positron Emission Tomography (PET) detector, namely the external plate of the EndoTOFPET-US system. The EndoTOFPET-US collaboration aims to integrate Time-Of-Flight PET with ultrasound endoscopy in a novel multimodal device, capable to support the development of new biomarkers for prostate and pancreatic tumors. The detector consists in two parts: a PET head mounted on an ultrasound probe and an external PET plate. The challenging goal of 1 mm spatial resolution for the PET image requires a detector with small crystal size, and therefore high channel density: 4096 LYSO crystals individually readout by Silicon Photomultipliers (SiPM) make up the external plate. The quality and properties of these components must be assessed before the assembly. The dark count rate, gain, breakdown voltage and correlated noise of the SiPMs are measured, while the LYSO crystals are evaluated in terms of light yield and energy resolution. In order to effectively reduce the noise in the PET image, high time resolution for the gamma detection is mandatory. The Coincidence Time Resolution (CTR) of all the SiPMs assembled with crystals is measured, and results show a value close to the demanding goal of 200 ps FWHM. The light output is evaluated for every channel for a preliminary detector calibration, showing an average of about 1800 pixels fired on the SiPM for a 511 keV interaction. Finally, the average energy resolution at 511 keV is about 13 %, enough for effective Compton rejection.

physics.ins-det↗

arXiv2014

Influence of X-ray Irradiation on the Properties of the Hamamatsu Silicon Photomultiplier S10362-11-050C

We have investigated the effects of X-ray irradiation to doses of 0, 200 Gy, 20 kGy, 2 MGy, and 20 MGy on the Hamamatsu silicon-photomultiplier (SiPM) S10362-11-050C. The SiPMs were irradiated without applied bias voltage. From current-voltage, capacitance/conductance-voltage, -frequency, pulse-shape, and pulse-area measurements, the SiPM characteristics below and above breakdown voltage were determined. Significant changes of some SiPM parameters are observed. Up to a dose of 20 kGy the performance of the SiPMs is hardly affected by X-ray radiation damage. For doses of 2 and 20 MGy the SiPMs operate with hardly any change in gain, but with a significant increase in dark-count rate and cross-talk probability.

physics.ins-det↗

arXiv2013

EndoTOFPET-US a Novel Multimodal Tool for Endoscopy and Positron Emission Tomography

The EndoTOFPET-US project aims to jointly exploit Time-Of-Flight Positron Emission Tomography (TOFPET) and ultrasound endoscopy with a multi-modal instrument for the development of new biomarkers for pancreas and prostate oncology. The paper outlines the functionality of the proposed instrument and the challenges for its realization. The high level of miniaturization and integration poses strong demands to the fields of scintillating crystallography, ultra-fast photon detection, highly integrated electronics and system integration. Solutions are presented to obtain a coincidence time resolution better than 200 ps and a spatial resolution of ~1 mm with an asymmetric TOFPET detector. A tracking system with better than 1 mm spatial resolution precision enables the online alignment of the system. The detector design, the production and test status of the single detector

physics.ins-det↗

arXiv2011

Silicon Photomultipliers for High Energy Physics Detectors

In this paper I want to review the current status of development of multi-pixel silicon-based avalanche photo-diodes operated in Geiger mode, also known as Silicon Photomultipliers (SiPM). Particular emphasis is given to the application of this type of photo-sensors in high energy physics detectors.

physics.ins-det↗