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arXiv · 2209.07785

Radiation Hardness of a Wide Spectral Range SiPM with Quasi-Spherical Junction

Julius Römer·Erika Garutti·Wolfgang Schmailzl·Jörn Schwandt·Stephan Martens
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Abstract

New pixel geometries are on the rise to achieve high sensitivity in near-infrared wavelengths with silicon photomultipliers (SiPMs). We test prototypes of the tip avalanche photo-diodes, which feature a quasi-spherical p-n junction and a high photodetection efficiency over a wide spectral range, and analyze the performance after neutron irradiation. The observed increase in dark count rate is significantly smaller than for a SiPM with a conventional design, indicating a good radiation hardness of the pixel geometry.

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Julius Römer, Erika Garutti, Wolfgang Schmailzl, Jörn Schwandt, Stephan Martens. 2022-09-16. Radiation Hardness of a Wide Spectral Range SiPM with Quasi-Spherical Junction. https://doi.org/10.1016/j.nima.2022.167792

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