arXiv subjects

Evgeny Mikheev

Publications and source records attributed to Evgeny Mikheev.

At least 19 recordsLinked to original sources

arXiv2026

Suppression of Superconductivity and Electrostatic Side Gate Tuning in High Mobility SrTiO$_3$ Surface Electron Gas

We report on the fabrication and characterization of patterned high-mobility two-dimensional electron gases (2DEG) formed on SrTiO$_3$ (STO) substrate surfaces by hydrogen plasma exposure. The resulting devices consistently showed high electron mobilities up to 7400 cm$^2$/V$\cdot$s. A large range of electron density was systematically explored by controlled aging of the sample between cooldowns, including the expected range for the STO 2DEG superconducting dome. No superconducting transition was observed down to the base temperature of approximately 10 mK. This suggests suppression of superconductivity in high mobility quasi-two-dimensional SrTiO$_3$ electron gas, likely linked to vertical confinement and electronic orbital rearrangement. We systematically explored electrostatic gate modulation in this 2DEG system and its scaling with electron density and side gate geometry. In contrast with our initial expectation, we observed an improvement of achievable total modulation for larger side gate to channel separation. At low electron density, stochastic channel pinch-off events were observed, creating quasi-ballistic constrictions with irregular conductance quantization. This epitaxy-free and high mobility oxide material platform offers a promising new route towards patterning quantum devices.

cond-mat.mes-hall↗

arXiv2026

Superconducting Dome in Ionic Liquid Gated Homoepitaxial Strontium Titanate Thin Films

In this work, we patterned a two-dimensional electron gas (2DEG) on the surface of a SrTiO$_3$ thin film grown homoepitaxially on SrTiO$_3$ by hybrid molecular beam epitaxy (hMBE). We explored the superconducting dome in this material system by tuning electron density with ionic liquid gating. We found superconducting transitions up to 503 mK near an optimal electron density of approximately 3 $\times$ 10$^{13}$ cm$^{-2}$. This is a meaningful increase from the typical optimal transition near 350 mK in similar 2DEGs on SrTiO$_3$ single crystal substrate surfaces. Systematic tuning of 2DEG electron density revealed a consistent BCS scaling between superconducting critical temperature, coherence length, and electron mean free path. Substantial variation of transition width across the dome was described by a paraconductivity model combining Aslamazov-Larkin and Maki-Thompson contributions.

cond-mat.supr-con↗

arXiv2025

α-Ta (111) Thin Films for Qubit Applications: A Study of Thickness Dependence and Universal Scaling

We explore the growth of α-Ta thin films ranging from ultra-thin (2 nm) to thick (250 nm) films grown by sputter epitaxy on c-plane sapphire substrates. We utilized 100 W power with a 32 mTorr sputter pressure at 650 ° substrate deposition temperature. We used X-ray diffractometry to extract the lattice constant and growth orientation of the films, finding a mono-oriented (111) films with a lattice spacing in agreement with a bulk Ta value of 3.31 Å. X-ray reflectometry is used to characterize the native oxide, film, and substrate-film interface as a function of thickness. We observe a very smooth morphology with an average roughness of 700 pm, as determined by both reflectometry and atomic force microscopy. The film nucleates with small islands, whose terrace width grows linearly as a function of thickness until 150 nm, where the terrace width becomes constant. From our reflectometry measurements, we uncover a pseudomorphic layer with a critical thickness of 1 nm and a self-limiting amorphous oxide that grows to a thickness of 2.25 nm; both of these layers are independent of thickness beyond 4 nm total thickness. We also studied the superconducting transition through electronic transport measurements using the Van der Pauw method to measure resistivity as a function of temperature. We observed a smooth evolution in critical superconducting temperature with total film thickness, from 2.9 °K for 7.5 nm to 4.2 °K for 269.2 nm, as expected from universal thickness scaling in superconductors. Density functional theory simulations were used to understand the oxidation process at the top surface layers of α-Ta (111). We observed that as the oxygen content on the surface increases, the Ta progressively loses its crystalline structure. Significant structural distortions occur when the Ta:O ratio exceeds 1:1, forming an amorphous TaO phase.

cond-mat.mtrl-sci↗

arXiv2024

Fractional AC Josephson effect in a topological insulator proximitized by a self-formed superconductor

A lateral Josephson junction in which the surface of a 3D topological insulator serves as the weak link should support topologically protected excitations related to Majorana fermions. The resulting $4π$-periodic current-phase relationship could be detected under high-frequency excitation by the suppression of odd Shapiro steps. Here, we demonstrate such devices through the self-formation of a Pd-Te superconducting layer from a telluride topological insulator, and observe suppressed first and third Shapiro steps. Other devices, including those where the Pd-Te layer is bolstered by an additional Al layer, show no suppression of Shapiro steps, a difference supported by simulations. Though we rule out the known trivial causes of suppressed Shapiro steps in our devices, we nevertheless argue that corroborating measurements and disorder-aware theoretical descriptions of these systems are needed before confidently claiming the observation of Majorana states.

cond-mat.mes-hall↗

arXiv2023

Universal conductance fluctuations in a MnBi$_2$Te$_4$ thin film

Quantum coherence of electrons can produce striking behaviors in mesoscopic conductors, including weak localization and the Aharonov-Bohm effect. Although magnetic order can also strongly affect transport, the combination of coherence and magnetic order has been largely unexplored. Here, we examine quantum coherence-driven universal conductance fluctuations in the antiferromagnetic, canted antiferromagnetic, and ferromagnetic phases of a thin film of the topological material MnBi$_2$Te$_4$. In each magnetic phase we extract a charge carrier phase coherence length of about 100 nm. The conductance magnetofingerprint is repeatable when sweeping applied magnetic field within one magnetic phase, but changes when the applied magnetic field crosses the antiferromagnetic/canted antiferromagnetic magnetic phase boundary. Surprisingly, in the antiferromagnetic and canted antiferromagnetic phase, but not in the ferromagnetic phase, the magnetofingerprint depends on the direction of the field sweep. To explain these observations, we suggest that conductance fluctuation measurements are sensitive to the motion and nucleation of magnetic domain walls in MnBi$_2$Te$_4$.

cond-mat.mes-hall↗

arXiv2022

Feedback Lock-in: A versatile multi-terminal measurement system for electrical transport devices

We present the design and implementation of a measurement system that enables parallel drive and detection of small currents and voltages at numerous electrical contacts to a multi-terminal electrical device. This system, which we term a feedback lock-in, combines digital control-loop feedback with software-defined lock-in measurements to dynamically source currents and measure small, pre-amplified potentials. The effective input impedance of each current/voltage probe can be set via software, permitting any given contact to behave as an open-circuit voltage lead or as a virtually grounded current source/sink. This enables programmatic switching of measurement configurations and permits measurement of currents at multiple drain contacts without the use of current preamplifiers. Our 32-channel implementation relies on commercially available digital input/output boards, home-built voltage preamplifiers, and custom open-source software. With our feedback lock-in, we demonstrate differential measurement sensitivity comparable to a widely used commercially available lock-in amplifier and perform efficient multi-terminal electrical transport measurements on twisted bilayer graphene and $SrTiO_3$ quantum point contacts. The feedback lock-in also enables a new style of current-biased measurement which we demonstrate on a ballistic graphene device.

cond-mat.mes-hall↗

arXiv2021

Ionic liquid gating of SrTiO$_3$ lamellas fabricated with a focused ion beam

In this work, we combine two previously-incompatible techniques for defining electronic devices: shaping three-dimensional crystals by focused ion beam (FIB), and two-dimensional electrostatic accumulation of charge carriers. The principal challenge for this integration is nanometer-scale surface damage inherent to any FIB-based fabrication. We address this by using a sacrificial protective layer to preserve a selected pristine surface. The test case presented here is accumulation of 2D carriers by ionic liquid gating at the surface of a micron-scale SrTiO$_3$ lamella. Preservation of surface quality is reflected in superconductivity of the accumulated carriers. This technique opens new avenues for realizing electrostatic charge tuning in materials that are not available as large or exfoliatable single crystals, and for patterning the geometry of the accumulated carriers.

cond-mat.mtrl-sci↗

arXiv2021

Clean ballistic quantum point contact in SrTiO$_3$

Two dimensional electron gases based on SrTiO$_3$ are an intriguing platform for exploring mesoscopic superconductivity combined with spin-orbit coupling, offering electrostatic tunability from insulator to metal to superconductor within a single material. So far, however, quantum effects in SrTiO$_3$ nanostructures have been complicated by disorder. Here we introduce a facile approach to achieving high mobility and patterning gate-tunable structures in SrTiO$_3$, and use it to demonstrate ballistic constrictions with clean normal state conductance quantization. Conductance plateaus show two-fold degeneracy that persists to magnetic fields of at least 5 T - far beyond what one would expect from the $g$-factor extracted at high fields - a potential signature of electron pairing extending outside the superconducting regime.

cond-mat.mes-hall↗

arXiv2021

Quantized critical supercurrent in SrTiO$_3$-based quantum point contacts

Superconductivity in SrTiO$_3$ occurs at remarkably low carrier densities and therefore, unlike conventional superconductors, can be controlled by electrostatic gates. Here we demonstrate nanoscale weak links connecting superconducting leads, all within a single material, SrTiO$_3$. Ionic liquid gating accumulates carriers in the leads, and local electrostatic gates are tuned to open the weak link. These devices behave as superconducting quantum point contacts with a quantized critical supercurrent. This is a milestone towards establishing SrTiO$_3$ as a single-material platform for mesoscopic superconducting transport experiments, that also intrinsically contains the necessary ingredients to engineer topological superconductivity

cond-mat.mes-hall↗

arXiv2020

Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates

Hexagonal boron nitride (h-BN) is unique among two-dimensional materials, with a large band gap (~6 eV) and high thermal conductivity (>400 W/m/K), second only to diamond among electrical insulators. Most electronic studies to date have relied on h-BN exfoliated from bulk crystals; however, for scalable applications the material must be synthesized by methods such as chemical vapor deposition (CVD). Here, we demonstrate single- and few-layer h-BN synthesized by CVD on single crystal platinum and on carbon nanotube (CNT) substrates, also comparing these films with h-BN deposited on the more commonly used polycrystalline Pt and Cu growth substrates. The h-BN film grown on single crystal Pt has a lower surface roughness and is more spatially homogeneous than the film from a polycrystalline Pt foil, and our electrochemical transfer process allows for these expensive foils to be reused with no measurable degradation. In addition, we demonstrate monolayer h-BN as an ultrathin, 3.33 $\unicode{x212B}$ barrier protecting MoS2 from damage at high temperatures and discuss other applications that take advantage of the conformal h-BN deposition on various substrates demonstrated in this work.

cond-mat.mtrl-sci↗

arXiv2017

Response of the lattice across the filling-controlled Mott metal-insulator transition of a rare earth titanate

The lattice response of a prototype Mott insulator, SmTiO3, to hole doping is investigated with atomic-scale spatial resolution. SmTiO3 films are doped with Sr on the Sm site with concentrations that span the insulating and metallic sides of the filling-controlled Mott metal-insulator transition (MIT). The GdFeO3-type distortions are investigated using an atomic resolution scanning transmission electron microscopy technique that can resolve small lattice distortions with picometer precision. We show that these distortions are gradually and uniformly reduced as the Sr concentration is increased without any phase separation. Significant distortions persist into the metallic state. The results present a new picture of the physics of this prototype filling-controlled MIT, which is discussed.

cond-mat.mtrl-sci↗

arXiv2017

Potential Fluctuations at Low Temperatures in Mesoscopic-Scale SmTiO$_{3}$/SrTiO$_{3}$/SmTiO$_{3}$ Quantum Well Structures

Heterointerfaces of SrTiO$_{3}$ with other transition metal oxides make up an intriguing family of systems with a bounty of coexisting and competing physical orders. Some examples, such as LaAlO$_{3}$/SrTiO$_{3}$, support a high carrier density electron gas at the interface whose electronic properties are determined by a combination of lattice distortions, spin-orbit coupling, defects, and various regimes of magnetic and charge ordering. Here, we study electronic transport in mesoscale devices made with heterostructures of SrTiO$_{3}$ sandwiched between layers of SmTiO$_{3}$, in which the transport properties can be tuned from a regime of Fermi-liquid like resistivity ($ρ\sim T^{2}$) to a non-Fermi liquid ($ρ\sim T^{5/3}$) by controlling the SrTiO$_{3}$ thickness. In mesoscale devices at low temperatures, we find unexpected voltage fluctuations that grow in magnitude as $T$ is decreased below 20 K, are suppressed with increasing contact electrode size, and are independent of the drive current and contact spacing distance. Magnetoresistance fluctuations are also observed, which are reminiscent of universal conductance fluctuations but not entirely consistent with their conventional properties. Candidate explanations are considered, and a mechanism is suggested based on mesoscopic temporal fluctuations of the Seebeck coefficient. An improved understanding of charge transport in these model systems, especially their quantum coherent properties, may lead to insights into the nature of transport in strongly correlated materials that deviate from Fermi liquid theory.

cond-mat.mes-hall↗

arXiv2016

Dichotomy of the transport coefficients of correlated electron liquids in SrTiO3

We discuss the Seebeck coefficient and the Hall mobility of electrons confined in narrow SrTiO3 quantum wells as a function of the three-dimensional carrier density and temperature. The quantum wells contain a fixed sheet carrier density of ~ 7x10^14 cm^-2 and their thickness is varied. At high temperatures, both properties exhibit apparent Fermi liquid behavior. In particular, the Seebeck coefficient increases nearly linearly with temperature (T) when phonon drag contributions are minimized, while the mobility decreases proportional to T^2. Furthermore, the Seebeck coefficient scales inversely with the Fermi energy (decreasing quantum well thickness). In contrast, the transport scattering rate is independent of the Fermi energy, which is inconsistent with a Fermi liquid. At low temperatures, the Seebeck coefficient deviates from the linear temperature dependence for those electron liquids that exhibit a correlation-induced pseudogap, indicating a change in the energy dependence of the scattering rate. The implications for describing transport in strongly correlated materials are discussed.

cond-mat.str-el↗

arXiv2016

Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

Bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Using space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent.

cond-mat.str-el↗

arXiv2015

Carrier density independent scattering rate in SrTiO3-based electron liquids

We examine the carrier density dependence of the scattering rate in two- and three-dimensional electron liquids in SrTiO3 in the regime where it scales with T^n (T is the temperature and n <= 2) in the cases when it is varied by electrostatic control and chemical doping, respectively. It is shown that the scattering rate is independent of the carrier density. This is contrary to the expectations from Landau Fermi liquid theory, where the scattering rate scales inversely with the Fermi energy (E_F). We discuss that the behavior is very similar to systems traditionally identified as non-Fermi liquids (n < 2). This includes the cuprates and other transition metal oxide perovskites, where strikingly similar density-independent scattering rates have been observed. The results indicate that the applicability of Fermi liquid theory should be questioned for a much broader range of correlated materials and point to the need for a unified theory.

cond-mat.str-el↗

arXiv2015

Tuning bad metal and non-Fermi liquid behavior in a Mott material: rare earth nickelate thin films

Resistances that exceed the Mott-Ioffe-Regel limit, known as bad metal behavior, and non-Fermi liquid behavior are ubiquitous features of the normal state of many strongly correlated materials. Here we establish the conditions that lead to bad metal and non-Fermi liquid phases in NdNiO3, which exhibits a prototype, bandwidth-controlled metal-insulator transition. We show that resistance saturation is determined by the magnitude of the Ni eg orbital splitting, which can be tuned by strain in epitaxial films, causing the appearance of bad metal behavior under certain conditions. The results shed light on the nature of a crossover to non-Fermi liquid metal phase and provide a predictive criterion for strong localization. They elucidate a seemingly complex phase behavior as a function of film strain and confinement and provide guidelines for orbital engineering and novel devices.

cond-mat.str-el↗

arXiv2015

Separation of transport lifetimes in SrTiO3-based two-dimensional electron liquids

Deviations from Landau Fermi liquid behavior are ubiquitous features of the normal state of unconventional superconductors. Despite several decades of investigation, the underlying mechanisms of these properties are still not completely understood. In this work, we show that two-dimensional electron liquids at SrTiO3/RTiO3 (R = Gd or Sm) interfaces reveal strikingly similar physics. Analysis of Hall and resistivity data show a clear separation of transport and Hall scattering rates, also known as "two-lifetime" behavior. This framework gives a remarkably simple and general description of the temperature dependence of the Hall coefficient. Distinct transport lifetimes accurately describe the transport phenomena irrespective of the nature of incipient magnetic ordering, the degree of disorder, confinement, or the emergence of non-Fermi liquid behavior. The Hall scattering rate diverges at a critical quantum well thickness, coinciding with a quantum phase transition. Collectively, these results introduce new constraints on the existing microscopic theories of lifetime separation and point to the need for unified understanding.

cond-mat.str-el↗

arXiv2014

Nanostructure Investigations of Nonlinear Differential Conductance in NdNiO$_3$ Thin Films

Transport measurements on thin films of NdNiO$_3$ reveal a crossover to a regime of pronounced nonlinear conduction below the well-known metal-insulator transition temperature. The evolution of the transport properties at temperatures well below this transition appears consistent with a gradual formation of a gap in the hole-like Fermi surface of this strongly correlated system. As $T$ is decreased below the nominal transition temperature, transport becomes increasily non-Ohmic, with a model of Landau-Zener breakdown becoming most suited for describing $I(V)$ characteristics as the temperature approaches 2~K.

cond-mat.str-el↗