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F. Beltram

Publications and source records attributed to F. Beltram.

At least 19 recordsLinked to original sources

STM Study of Exfoliated Few Layer Black Phosphorus Annealed in Ultrahigh Vacuum

Black Phosphorus (bP) has emerged as an interesting addition to the category of two-dimensional materials. Surface-science studies on this material are of great interest, but they are hampered by bP's high reactivity to oxygen and water, a major challenge to scanning tunneling microscopy (STM) experiments. As a consequence, the large majority of these studies were performed by cleaving a bulk crystal in situ. Here we present a study of surface modifications on exfoliated bP flakes upon consecutive annealing steps, up to 550 C, well above the sublimation temperature of bP. In particular, our attention is focused on the temperature range 375 C - 400 C, when sublimation starts, and a controlled desorption from the surface occurs alongside with the formation of characteristic well-aligned craters. There is an open debate in the literature about the crystallographic orientation of these craters, whether they align along the zigzag or the armchair direction. Thanks to the atomic resolution provided by STM, we are able to identify the orientation of the craters with respect to the bP crystal: the long axis of the craters is aligned along the zigzag direction of bP. This allows us to solve the controversy, and, moreover, to provide insight in the underlying desorption mechanism leading to crater formation.

cond-mat.mes-hall

Heterogeneous nucleation of catalyst-free InAs nanowires on silicon

We report on the heterogeneous nucleation of catalyst-free InAs nanowires on Si (111) substrates by chemical beam epitaxy. We show that nanowire nucleation is enhanced by sputtering the silicon substrate with energetic particles. We argue that particle bombardment introduces lattice defects on the silicon surface that serve as preferential nucleation sites. The formation of these nucleation sites can be controlled by the sputtering parameters, allowing the control of nanowire density in a wide range. Nanowire nucleation is accompanied by unwanted parasitic islands, but by careful choice of annealing and growth temperature allows to strongly reduce the relative density of these islands and to realize samples with high nanowire yield.

cond-mat.mes-hall

Transport in strongly-coupled graphene-LaAlO3/SrTiO3 hybrid systems

We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep two-dimensional electron system. At low graphene-oxide inter-layer bias the two electron systems are electrically isolated, despite their small spatial separation, and very efficient reciprocal gating is shown. A pronounced rectifying behavior is observed for larger bias values and ascribed to the interplay between electrostatic depletion and tunneling across the LaAlO3 barrier. The relevance of these results in the context of strongly-coupled bilayer systems is discussed.

cond-mat.mes-hall

Increasing the active surface of titanium islands on graphene by nitrogen sputtering

Titanium-island formation on graphene as a function of defect density is investigated. When depositing titanium on pristine graphene, titanium atoms cluster and form islands with an average diameter of about 10nm and an average height of a few atomic layers. We show that if defects are introduced in the graphene by ion bombardment, the mobility of the deposited titanium atoms is reduced and the average diameter of the islands decreases to 5nm with monoatomic height. This results in an optimized coverage for hydrogen storage applications since the actual titanium surface available per unit graphene area is significantly increased.

physics.chem-ph

Selective control of edge-channel trajectories by scanning gate microscopy

Electronic Mach-Zehnder interferometers in the Quantum Hall (QH) regime are currently discussed for the realization of quantum information schemes. A recently proposed device architecture employs interference between two co-propagating edge channels. Here we demonstrate the precise control of individual edge-channel trajectories in quantum point contact devices in the QH regime. The biased tip of an atomic force microscope is used as a moveable local gate to pilot individual edge channels. Our results are discussed in light of the implementation of multi-edge interferometers.

cond-mat.mes-hall

High-contrast Aharonov-Bohm oscillations in the acoustoelectric transport regime

Phase-coherent acoustoelectric transport is reported.Aharonov-Bohm oscillations in the acoustoelectric current with visibility exceeding 100% were observed in mesoscopic GaAs rings as a function of an external magnetic field at cryogenic temperatures. A theoretical analysis of the acoustoelectric transport in ballistic devices is proposed to model experimental observations. Our findings highlight a close analogy between acoustoelectric transport and thermoelectric properties in ballistic devices.

cond-mat.mes-hall

Resolving the effects of frequency dependent damping and quantum phase diffusion in YBa$_2$Cu$_3$O$_{7-x}$ Josephson junctions

We report on the study of the phase dynamics of high critical temperature superconductor Josephson junctions. We realized YBa$_2$Cu$_3$O$_{7-x}$ (YBCO) grain boundary (GB) biepitaxial junctions in the submicron scale, using low loss substrates, and analyzed their dissipation by comparing the transport measurements with Monte Carlo simulations. The behavior of the junctions can be fitted using a model based on two quality factors, which results in a frequency dependent damping. Moreover, our devices can be designed to have Josephson energy of the order of the Coulomb energy. In this unusual energy range, phase delocalization strongly influences the device's dynamics, promoting the transition to a quantum phase diffusion regime. We study the signatures of such a transition by combining the outcomes of Monte Carlo simulations with the analysis of the device's parameters, the critical current and the temperature behavior of the low voltage resistance $R_0$.

cond-mat.supr-con

High critical-current density and scaling of phase-slip processes in YBaCuO nanowires

YBaCuO nanowires were reproducibly fabricated down to widths of 50 nm. A Au/Ti cap layer on YBCO yielded high electrical performance up to temperatures above 80 K in single nanowires. Critical current density of tens of MA/cm2 at T = 4.2 K and of 10 MA/cm2 at 77 K were achieved that survive in high magnetic fields. Phase-slip processes were tuned by choosing the size of the nanochannels and the intensity of the applied external magnetic field. Data indicate that YBCO nanowires are rather attractive system for the fabrication of efficient sensors, supporting the notion of futuristic THz devices.

cond-mat.supr-con

Cooling electrons from 1 K to 400 mK with V-based nanorefrigerators

The fabrication and operation of V-based superconducting nanorefrigerators is reported. Specifically, electrons in an Al island are cooled thanks to hot-quasiparticle extraction provided by tunnel-coupled V electrodes. Electronic temperature reduction down to 400 mK starting from 1 K is demonstrated with a cooling power ~20 pW at 1 K for a junction area of 0.3 micron^2. The present architecture extends to higher temperatures refrigeration based on tunneling between superconductors and paves the way to the implementation of a multi-stage on-chip cooling scheme operating from above 1 K down to the mK regime.

cond-mat.mes-hall

Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice

We report the magneto-transport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magneto-resistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions.

cond-mat.mes-hall

Electronic implementations of Interaction-Free Measurements

Three different implementations of interaction-free measurements (IFMs) in solid-state nanodevices are discussed. The first one is based on a series of concatenated Mach-Zehnder interferometers, in analogy to optical-IFM setups. The second one consists of a single interferometer and concatenation is achieved in the time domain making use of a quantized electron emitter. The third implementation consists of an asymmetric Aharonov-Bohm ring. For all three cases we show that the presence of a dephasing source acting on one arm of the interferometer can be detected without degrading the coherence of the measured current. Electronic implementations of IFMs in nanoelectronics may play a fundamental role as very accurate and noninvasive measuring schemes for quantum devices.

cond-mat.mes-hall

Singlet-triplet transition in a few-electron lateral InGaAs-InAlAs quantum dot

The magnetic-field evolution of Coulomb blockade peaks in lateral InGaAs/InAlAs quantum dots in the few-electron regime is reported. Quantum dots are defined by gates evaporated onto a 60 nm-thick hydrogen silsesquioxane insulating film. A gyromagnetic factor of 4.4 is measured via zero-bias spin spectroscopy and a transition from singlet to triplet spin configuration is found at an in-plane magnetic field B = 0.7 T. This observation opens the way to the manipulation of singlet and triplet states at moderate fields and its relevance for quantum information applications will be discussed.

cond-mat.mes-hall

InAs nanowire hot-electron Josephson transistor

At a superconductor (S)-normal metal (N) junction pairing correlations can "leak-out" into the N region. This proximity effect [1, 2] modifies the system transport properties and can lead to supercurrent flow in SNS junctions [3]. Recent experimental works showed the potential of semiconductor nanowires (NWs) as building blocks for nanometre-scale devices [4-7], also in combination with superconducting elements [8-12]. Here, we demonstrate an InAs NW Josephson transistor where supercurrent is controlled by hot-quasiparticle injection from normal-metal electrodes. Operational principle is based on the modification of NW electron-energy distribution [13-20] that can yield reduced dissipation and high-switching speed. We shall argue that exploitation of this principle with heterostructured semiconductor NWs opens the way to a host of out-of-equilibrium hybrid-nanodevice concepts [7, 21].

cond-mat.mes-hall

Coherent detection of electron dephasing

We show that an Aharonov-Bohm (AB) ring with asymmetric electron injection can act as a coherent detector of electron dephasing. The presence of a dephasing source in one of the two arms of a moderately-to-highly asymmetric ring changes the response of the system from total reflection to complete transmission while preserving the coherence of the electrons propagating from the ring, even for strong dephasing. We interpret this phenomenon as an implementation of an interaction-free measurement.

cond-mat.mes-hall

Impact of classical forces and decoherence in multi-terminal Aharonov-Bohm networks

Multi-terminal Aharonov-Bohm (AB) rings are ideal building blocks for quantum networks (QNs) thanks to their ability to map input states into controlled coherent superpositions of output states. We report on experiments performed on three-terminal GaAs/Al_(x)Ga_(1-x)As AB devices and compare our results with a scattering-matrix model including Lorentz forces and decoherence. Our devices were studied as a function of external magnetic field (B) and gate voltage at temperatures down to 350 mK. The total output current from two terminals while applying a small bias to the third lead was found to be symmetric with respect to B with AB oscillations showing abrupt phase jumps between 0 and pi at different values of gate voltage and at low magnetic fields, reminiscent of the phase-rigidity constraint due to Onsager-Casimir relations. Individual outputs show quasi-linear dependence of the oscillation phase on the external electric field. We emphasize that a simple scattering-matrix approach can not model the observed behavior and propose an improved description that can fully describe the observed phenomena. Furthermore, we shall show that our model can be successfully exploited to determine the range of experimental parameters that guarantee a minimum oscillation visibility, given the geometry and coherence length of a QN.

cond-mat.mes-hall

Manipulation and Generation of Supercurrent in Out-of-Equilibrium Josephson Tunnel Nanojunctions

We demonstrate experimentally manipulation of supercurrent in Al-AlO_x-Ti Josephson tunnel junctions by injecting quasiparticles in a Ti island from two additional tunnel-coupled Al superconducting reservoirs. Both supercurrent enhancement and quenching with respect to equilibrium are achieved. We demonstrate cooling of the Ti line by quasiparticle injection from the normal state deep into the superconducting phase. A model based on heat transport and non-monotonic current-voltage characteristic of a Josephson junction satisfactorily accounts for our findings.

cond-mat.mes-hall

Filling factor dependence of the fractional quantum Hall effect gap

We directly measure the chemical potential jump in the low-temperature limit when the filling factor traverses the nu = 1/3 and nu = 2/5 fractional gaps in two-dimensional (2D) electron system in GaAs/AlGaAs single heterojunctions. In high magnetic fields B, both gaps are linear functions of B with slopes proportional to the inverse fraction denominator, 1/q. The fractional gaps close partially when the Fermi level lies outside. An empirical analysis indicates that the chemical potential jump for an IDEAL 2D electron system, in the highest accessible magnetic fields, is proportional to q^{-1}B^{1/2}.

cond-mat.str-el

Nonequilibrium spin-dependent phenomena in mesoscopic superconductor-normal metal tunnel structures

We analyze the broad range of spin-dependent nonequilibrium transport properties of hybrid systems composed of a normal region tunnel coupled to two superconductors with exchange fields induced by the proximity to thin ferromagnetic layers and highlight its functionalities. By calculating the quasiparticle distribution functions in the normal region we find that they are spin-dependent and strongly sensitive to the relative angle between exchange fields in the two superconductors. The impact of inelastic collisions on their properties is addressed. As a result, the electric current flowing through the system is found to be strongly dependent on the relative angle between exchange fields, giving rise to a huge value of magnetoresistance. Moreover, the current presents a complete spin-polarization in a wide range of bias voltages, even in the quasiequilibrium case. In the nonequilibrium limit we parametrize the distributions with an ``effective`` temperature, which turns out to be strongly spin-dependent, though quite sensitive to inelastic collisions. By tunnel coupling the normal region to an additional superconducting electrode we show that it is possible to implement a spin-polarized current source of both spin species, depending on the bias voltages applied.

cond-mat.mes-hall