arXiv subjects
Publications and source records attributed to F. Beltram.
Monoatomic layers of graphite can be electrically contacted and used as building blocks for new promising devices. These experiment are today possible thanks to the fact that very thin graphite can be identified on a dielectric substrate using a simple optical microscope. We investigate the mechanism behind the strong visibility of graphite and we discuss the importance of the substrate and of the microcope objective used for the imaging.
An electron-cooling principle based on Landau quantization is proposed for nanoscale conductor systems. Operation relies on energy-selective electron tunneling into a two-dimensional electron gas in quantizing magnetic fields. This quantum refrigerator provides significant cooling power (~1 nW at a few K for realistic parameters) and offers a unique flexibility thanks to its tunability via the magnetic-field intensity. The available performance is only marginally affected by nonidealities such as disorder or imperfections in the semiconductor. Methods for the implementation of this system and its characterization are discussed.
We measure the chemical potential jump across the fractional gap in the low-temperature limit in the two-dimensional electron system of GaAs/AlGaAs single heterojunctions. In the fully spin-polarized regime, the gap for filling factor nu=1/3 increases LINEARLY with magnetic field and is coincident with that for nu=2/3, reflecting the electron-hole symmetry in the spin-split Landau level. In low magnetic fields, at the ground-state spin transition for nu=2/3, a correlated behavior of the nu=1/3 and nu=2/3 gaps is observed.
A solid-state cooling principle based on magnetic-field-driven tunable suppression of Andreev reflection in superconductor/two-dimensional electron gas nanostructures is proposed. This cooling mechanism can lead to very large heat fluxes per channel up to 10^4 times greater than currently achieved with superconducting tunnel junctions. This efficacy and its availability in a two-dimensional electron system make this method of particular relevance for the implementation of quantum nanostructures operating at cryogenic temperatures.
We show that very large negative magnetoresistance can be obtained in magnetic trilayers in a current-in-plane geometry owing to the existence of crossed Andreev reflection. This spin-valve consists of a thin superconducting film sandwiched between two ferromagnetic layers whose magnetization is allowed to be either parallelly or antiparallelly aligned. For a suitable choice of structure parameters and nearly fully spin-polarized ferromagnets the magnetoresistance can exceed -80%. Our results are relevant for the design and implementation of spintronic devices exploiting ferromagnet-superconductor structures.
A hybrid ferromagnet-superconductor spin valve is proposed. Its operation relies on the interplay between nonequilibrium transport and proximity-induced exchange coupling in superconductors. Huge tunnel magnetoresistance values as large as some 10^6% can be achieved in suitable ferromagnet-superconductor combinations under proper voltage biasing. The controllable spin-filter nature of the structure combined with its intrinsic simplicity make this setup attractive for low-temperature spintronic applications where reduced power dissipation is an additional requirement.
A hybrid superconductor--two-dimensional electron gas microdevice is presented. Its working principle is based on the suppression of Andreev reflection at the superconductor-semiconductor interface caused by a magnetic barrier generated by a ferromagnetic strip placed on top of the structure. Device switching is predicted with fields up to some mT and working frequencies of several GHz, making it promising for applications ranging from microswitches and storage cells to magnetic field discriminators.
We study the interaction-enhanced spin gaps in the two-dimensional electron gas confined in GaAs/AlGaAs single heterojunctions subjected to weak magnetic fields. The values are obtained from the chemical potential jumps measured by magnetocapacitance. The gap increase with parallel magnetic field indicates that the lowest-lying charged excitations are accompanied with a single spin flip at the odd-integer filling factor nu=1 and nu=3, in disagreement with the concept of skyrmions.
We investigate Andreev reflection at the interface between a superconductor and a two--dimensional electron system (2DES) in an external magnetic field such that cyclotron motion is important in the latter. A finite Zeeman splitting in the 2DES and the presence of diamagnetic screening currents in the superconductor are incorporated into a microscopic theory of Andreev edge states, which is based on the Bogoliubov--de Gennes formalism. The Andreev--reflection contribution to the interface conductance is calculated. The effect of Zeeman splitting is most visible as a double--step feature in the conductance through clean interfaces. Due to a screening current, conductance steps are shifted to larger filling factors and the formation of Andreev edge states is suppressed below a critical filling factor.
We report tilted-field transport measurements in the quantum-Hall regime in an InAs/In_0.75Ga_0.25As/In_0.75Al_0.25As quantum well. We observe anti-crossings of spin-split Landau levels, which suggest a mixing of spin states at Landau level coincidence. We propose that the level repulsion is due to the presence of spin-orbit and of band-non-parabolicity terms which are relevant in narrow-gap systems. Furthermore, electron-electron interaction is significant in our structure, as demonstrated by the large values of the interaction-induced enhancement of the electronic g-factor.
Electrostatic control of the magnetization of a normal mesoscopic conductor is analyzed in a hybrid superconductor-normal-superconductor system. This effect stems from the interplay between the non-equilibrium condition in the normal region and the Zeeman splitting of the quasiparticle density of states of the superconductor subjected to a static in-plane magnetic field. Unexpected spin-dependent effects such as magnetization suppression, diamagnetic-like response of the susceptibility as well as spin-polarized current generation are the most remarkable features presented. The impact of scattering events is evaluated and let us show that this effect is compatible with realistic material properties and fabrication techniques.
A tunable directional coupler based on Coulomb Blockade effect is presented. Two electron waveguides are coupled by a quantum dot to an injector waveguide. Electron confinement is obtained by surface Schottky gates on single GaAs/AlGaAs heterojunction. Magneto-electrical measurements down to 350 mK are presented and large transconductance oscillations are reported on both outputs up to 4.2 K. Experimental results are interpreted in terms of Coulomb Blockade effect and the relevance of the present design strategy for the implementation of an electronic multiplexer is underlined.
Low field magnetotransport revealing signatures of ballistic transport effects in strained Si/SiGe cavities is investigated. We fabricated strained Si/SiGe cavities by confining a high mobility Si/SiGe 2DEG in a bended nanowire geometry defined by electron-beam lithography and reactive ion etching. The main features observed in the low temperature magnetoresistance curves are the presence of a zero-field magnetoresistance peak and of an oscillatory structure at low fields. By adopting a simple geometrical model we explain the oscillatory structure in terms of electron magnetic focusing. A detailed examination of the zero-field peak lineshape clearly shows deviations from the predictions of ballistic weak localization theory.
The distinctive quasiparticle distribution existing under nonequilibrium in a superconductor-insulator-normal metal-insulator-superconductor (SINIS) mesoscopic line is proposed as a novel tool to control the supercurrent intensity in a long Josephson weak link. We present a description of this system in the framework of the diffusive-limit quasiclassical Green-function theory and take into account the effects of inelastic scattering with arbitrary strength. Supercurrent enhancement and suppression, including a marked transition to a $π$-junction are striking features leading to a fully tunable structure. The role of the degree of nonequilibrium, temperature, and materials choice as well as features like noise, switching time, and current and power gain are also addressed.
We report magneto-transport measurements on high-mobility two-dimensional electron systems (2DESs) confined in In_0.75Ga_0.25As/In_0.75Al_0.25As single quantum wells. Several quantum Hall states are observed in a wide range of temperatures and electron densities, the latter controlled by a gate voltage down to values of 1.10^11 cm^-2. A tilted-field configuration is used to induce Landau level crossings and magnetic transitions between quantum Hall states with different spin polarizations. A large filling factor dependent effective electronic g-factor is determined by the coincidence method and cyclotron resonance measurements. From these measurements the change in exchange-correlation energy at the magnetic transition is deduced. These results demonstrate the impact of many-body effects in tilted-field magneto-transport of high-mobility 2DESs confined in In_0.75Ga_0.25As/In_0.75Al_0.25As quantum wells. The large tunability of electron density and effective g-factor, in addition, make this material system a promising candidate for the observation of a large variety of spin-related phenomena.
The distinctive quasiparticle distribution existing under nonequilibrium in a superconductor-insulator-normal metal-insulator-superconductor (SINIS) mesoscopic line is proposed as a novel tool to control the supercurrent intensity in a long Josephson weak link. We present a description of this system in the framework of the diffusive-limit quasiclassical Green-function theory and take into account the effects of inelastic scattering with arbitrary strength. Supercurrent enhancement and suppression, including a marked transition to a $π$-junction are striking features leading to a fully tunable structure.
A superconductor-normal metal-superconductor (SNS) transistor based on superconducting microcoolers is presented. The proposed 4-terminal device consists of a long SNS Josephson junction whose N region is in addition symmetrically connected to superconducting reservoirs through tunnel barriers (I). Biasing the SINIS line allows to modify the quasiparticle temperature in the weak link, thus controlling the Josephson current. We show that, in suitable voltage and temperature regimes, large supercurrent enhancements can be achieved with respect to equilibrium, due to electron ``cooling'' generated by the control voltage. The extremely low power dissipation intrinsic to the structure makes this device relevant for a number of electronic applications.
Coherent transport in Nb/GaAs superconductor-semiconductor microstructures is presented. The structures fabrication procedure is based on delta-doped layers grown by molecular-beam-epitaxy near the GaAs surface, followed by an As cap layer to protect the active semiconductor layers during ex situ transfer. The superconductor is then sputter deposited in situ after thermal desorption of the protective layer. Two types of structures in particular will be discussed, i.e., a reference junction and the engineered one that contains an additional insulating AlGaAs barrier inserted during the growth in the semiconductor. This latter configuration may give rise to controlled interference effects and realizes the model introduced by de Gennes and Saint-James in 1963. While both structures show reflectionless tunneling-dominated transport, only the engineered junction shows additionally a low-temperature single marked resonance peaks superimposed to the characteristic Andreev-dominated subgap conductance. The analysis of coherent magnetotransport in both microstructures is successfully performed within the random matrix theory of Andreev transport and ballistic effects are included by directly solving the Bogoliubov-de Gennes equations. The impact of junction morphology on reflectionless tunneling and the application of the employed fabrication technique to the realization of complex semiconductor-superconductor systems are furthermore discussed.