arXiv subjects

F. Beltram

Publications and source records attributed to F. Beltram.

40 records · Page 3Linked to original sources

arXiv2002

Resonant Transport in Nb/GaAs/AlGaAs/GaAs Microstructures

Resonant transport in a hybrid semiconductor-superconductor microstructure grown by MBE on GaAs is presented. This structure experimentally realizes the prototype system originally proposed by de Gennes and Saint-James in 1963 in \emph{all}-metal structures. A low temperature single peak superimposed to the characteristic Andreev-dominated subgap conductance represents the mark of such resonant behavior. Random matrix theory of quantum transport was employed in order to analyze the observed magnetotransport properties and ballistic effects were included by directly solving the Bogoliubov-de Gennes equations.

hep-ph↗

arXiv2002

Ultra-efficient Cooling in Ferromagnet-Superconductor Microrefrigerators

A promising scheme for electron microrefrigeration based on ferromagnet-superconductor contacts is presented. In this setup, cooling power densities up to 600 nW/$μ$m$^2$ can be achieved leading to electronic temperature reductions largely exceeding those obtained with existing superconductor-normal metal tunnel contacts. Half-metallic CrO$_2$/Al bilayers are indicated as ideal candidates for the implementation of the device.

cond-mat.supr-con↗

arXiv1999

Polaronic Excitons in ZnCdSe/ZnSe Quantum Wells

We present a detailed investigation of excitonic absorption in $Zn_{0.69}Cd_{0.31}Se/ZnSe$ quantum wells under the application of a perpendicular magnetic field. The large energy separation between heavy- and light-hole excitons allows us to clearly resolve and identify magneto-excitonic absorption resonant with the continuum edge of the 1S heavy-hole exciton. Experimental values of the exciton binding energy are compared with results of a theoretical model that includes the exciton-phonon interaction. The remarkable agreemeent found unambiguously indicates the predominant polaronic character of excitons in ZnSe-based heterostructures.

cond-mat.mes-hall↗

arXiv1999

Andreev reflection in engineered Al/Si/InGaAs(001) junctions

Complete suppression of the native n-type Schottky barrier is demonstrated in Al/InGaAs(001) junctions grown by molecular-beam-epitaxy. This result was achieved by the insertion of Si bilayers at the metal-semiconductor interface allowing the realization of truly Ohmic non-alloyed contacts in low-doped and low-In content InGaAs/Si/Al junctions. It is shown that this technique is ideally suited for the fabrication of high-transparency superconductor-semiconductor junctions. To this end magnetotransport characterization of Al/Si/InGaAs low-n-doped single junctions below the Al critical temperature is presented. Our measurements show Andreev-reflection dominated transport corresponding to junction transparency close to the theoretical limit due to Fermi-velocity mismatch

cond-mat.supr-con↗