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F. Guinea

Publications and source records attributed to F. Guinea.

At least 109 records · Page 6Linked to original sources
arXiv2008

Spin polarized current and Andreev transmission in planar superconducting/ferromagnetic Nb/Ni junctions

We have measured the tunnelling current in Nb/Nb$_x$O$_y$/Ni planar tunnel junctions at different temperatures. The junctions are in the intermediate transparency regime. We have extracted the current polarization of the metal/ferromagnet junction without applying a magnetic field. We have used a simple theoretical model, that provides consistent fitting parameters for the whole range of temperatures analyzed. We have also been able to gain insight into the microscopic structure of the oxide barriers of our junctions.%

cond-mat.supr-con↗
arXiv2008

Transport through evanescent waves in ballistic graphene quantum dots

We study the transport through evanescent waves in graphene quantum dots of different geometries. The transmission is suppressed when the leads are attached to edges of the same majority sublattice. Otherwise, the transmission depends exponentially on the distance between leads in rectangular dots, and as a power law in circular dots. The transmission through junctions where the transmitted and reflected currents belong to the opposite valley as the incoming one depends on details of the lattice structure at distances comparable to the atomic spacing.

cond-mat.mes-hall↗
arXiv2008

Pseudomagnetic fields and ballistic transport in a suspended graphene sheet

We study a suspended graphene sheet subject to the electric field of a gate underneath. We compute the elastic deformation of the sheet and the corresponding effective gauge field, which modifies the electronic transport. In a clean system the two-terminal conductance of the sample is reduced below the ballistic limit and is almost totally suppressed at low carrier concentrations in samples under tension. Residual disorder restores a small finite conductivity.

cond-mat.mes-hall↗
arXiv2008

Conductance of p-n-p graphene structures with 'air-bridge' top gates

We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap--a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realise p-n-p structures where the conducting properties of chiral carriers are studied. The band profile of the structures is calculated taking into account the specifics of the graphene density of states and is used to find the resistance of the p-n junctions expected for chiral carriers. We show that ballistic p-n junctions have larger resistance than diffusive ones. This is caused by suppressed transmission of chiral carriers at angles away from the normal to the junction.

cond-mat.mes-hall↗
arXiv2008

Intrinsic atomic scale modulations of the superconducting gap of 2H-NbSe2

We present scanning tunneling microscopy and spectroscopy measurements at 100mK in the superconducting material 2H-NbSe2 that show well defined features in the superconducting density of states changing in a pattern closely following atomic periodicity. Our experiment demonstrates that the intrinsic superconducting density of states can show atomic size modulations, which reflect the reciprocal space structure of the superconducting gap. In particular we obtain that the superconducting gap of 2H-NbSe2 has six fold modulated components at 0.75 mV and 1.2 mV.Moreover, we also find related atomic size modulations inside vortices, demonstrating that the much discussed star shape vortex structure produced by localized states inside the vortex cores, has a, hitherto undetected, superposed atomic size modulation. The tip substrate interaction in an anisotropic superconductor has been calculated, giving position dependent changes related to the observed gap anisotropy.

cond-mat.supr-con↗
arXiv2008

Effect of electron-electron interaction on the Fermi surface topology of doped graphene

The electron-electron interactions effects on the shape of the Fermi surface of doped graphene are investigated. The actual discrete nature of the lattice is fully taken into account. A $π$-band tight-binding model, with nearest-neighbor hopping integrals, is considered. We calculate the self-energy corrections at zero temperature. Long and short range Coulomb interactions are included. The exchange self-energy corrections for graphene preserve the trigonal warping of the Fermi surface topology, although rounding the triangular shape. The band velocity is renormalized to higher value. Corrections induced by a local Coulomb interaction, calculated by second order perturbation theory, do deform anisotropically the Fermi surface shape. Results are compared to experimental observations and to other theoretical results.

cond-mat.str-el↗
arXiv2008

Gauge field induced by ripples in graphene

We study the effects of quenched height fluctuations (ripples) in graphene on the density of states (DOS). We show that at strong ripple disorder a divergence in the DOS can lead to an ordered ground state. We also discuss the formation of dislocations in corrugated systems, buckling effects in suspended samples, and the changes in the Landau levels due to the interplay between a real magnetic field and the gauge potential induced by ripples.

cond-mat.dis-nn↗
arXiv2008

Surface dissipation in nanoelectromechanical systems: Unified description with the standard tunneling model and effects of metallic electrodes

By modifying and extending recent ideas [C. Seoanez et al., Europhys. Lett. 78, 60002 (2007)], a theoretical framework to describe dissipation processes in the surfaces of vibrating micro- and nanoelectromechanical devices, thought to be the main source of friction at low temperatures, is presented. Quality factors as well as frequency shifts of flexural and torsional modes in doubly clamped beams and cantilevers are given, showing the scaling with dimensions, temperature, and other relevant parameters of these systems. Full agreement with experimental observations is not obtained, leading to a discussion of limitations and possible modifications of the scheme to reach a quantitative fitting to experiments. For nanoelectromechanical systems covered with metallic electrodes, the friction due to electrostatic interaction between the flowing electrons and static charges in the device and substrate is also studied.

cond-mat.mes-hall↗
arXiv2008

Interactions and magnetism in graphene boundary states

We analyze interaction effects on boundary states of single layer graphene. Near a half filled band, both short and long-ranged interactions lead to a fully spin polarized configuration. In addition, the band of boundary states acquires a finite dispersion as function of the momentum parallel to the edge, induced by the interactions. Away from half filling the wavefunction develops charge correlations similar to those in a Wigner crystal, and the spin strongly alternates with the occupation of the boundary states. For certain fillings the ground state has a finite linear momentum, leading to the formation of persistent currents.

cond-mat.str-el↗
arXiv2008

Electrostatic interactions between graphene layers and their environment

We analyze the electrostatic interactions between a single graphene layer and a SiO$_2$ susbtrate, and other materials which may exist in its environment. We obtain that the leading effects arise from the polar modes at the SiO$_2$ surface, and water molecules, which may form layers between the graphene sheet and the substrate. The strength of the interactions implies that graphene is pinned to the substrate at distances greater than a few lattice spacings. The implications for graphene nanoelectromechanical systems, and for the interaction between graphene and a STM tip are also considered.

cond-mat.mtrl-sci↗
arXiv2008

The electronic properties of graphene

This article reviews the basic theoretical aspects of graphene, a one atom thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. We show that the Dirac electrons behave in unusual ways in tunneling, confinement, and integer quantum Hall effect. We discuss the electronic properties of graphene stacks and show that they vary with stacking order and number of layers. Edge (surface) states in graphene are strongly dependent on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. We also discuss how different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.

cond-mat.other↗
arXiv2008

Transport regimes in surface disordered graphene sheets

We investigate the size scaling of the conductance of surface disordered graphene sheets of width W and length L. Metallic leads are attached to the sample ends across its width. At E ~ 0, the conductance scales with the system size as follows: i) For constant W/L, it remains constant as size is increased, at a value which depends almost lineally on that ratio; this scaling allows the definition of a conductivity value that results similar to the experimental one. ii) For fixed width, the conductance decreases exponentially with length L, both for ordered and disordered samples. Disorder reduces the exponential decay, leading to a higher conductance. iii) For constant length, conductance increases linearly with width W, a result that is exclusively due to the tails of the states of the metallic wide contact. iv) The average conductance does not show an appreciable dependence on magnetic field. Away from E = 0, the conductance shows the behavior expected in two-dimensional systems with surface disorder, i.e., ballistic transport.

cond-mat.mes-hall↗
arXiv2008

Electronic properties of bilayer and multilayer graphene

We study the effects of site dilution disorder on the electronic properties in graphene multilayers, in particular the bilayer and the infinite stack. The simplicity of the model allows for an easy implementation of the coherent potential approximation and some analytical results. Within the model we compute the self-energies, the density of states and the spectral functions. Moreover, we obtain the frequency and temperature dependence of the conductivity as well as the DC conductivity. The c-axis response is unconventional in the sense that impurities increase the response for low enough doping. We also study the problem of impurities in the biased graphene bilayer.

cond-mat.mes-hall↗
arXiv2007

Midgap states and charge inhomogeneities in corrugated graphene

We study the changes induced by the effective gauge field due to ripples on the low energy electronic structure of graphene. We show that zero energy Landau levels will form, associated to the smooth deformation of the graphene layer, when the height corrugation, $h$, and the length of the ripple, $l$, are such that $h^2 / (l a) \gtrsim 1$, where $a$ is the lattice constant. The existence of localized levels gives rise to a large compressibility at zero energy, and to the enhancement of instabilities arising from electron-electron interactions including electronic phase separation. The combined effect of the ripples and an external magnetic field breaks the valley symmetry of graphene leading to the possibility of valley selection.

cond-mat.mes-hall↗
arXiv2007

Electron-electron interaction and charging effects in graphene quantum dots

We analyze charging effects in graphene quantum dots. Using a simple model, we show that, when the Fermi level is far from the neutrality point, charging effects lead to a shift in the electrostatic potential and the dot shows standard Coulomb blockade features. Near the neutrality point, surface states are partially occupied and the Coulomb interaction leads to a strongly correlated ground state which can be approximated by either a Wigner crystal or a Laughlin like wave function. The existence of strong correlations modify the transport properties which show non equilibrium effects, similar to those predicted for tunneling into other strongly correlated systems.

cond-mat.mes-hall↗
arXiv2007

Substrate limited electron dynamics in graphene

We study the effects of polarizable substrates such as SiO2 and SiC on the carrier dynamics in graphene. We find that the quasiparticle spectrum acquires a finite broadening due to the long-range interaction with the polar modes at the interface between graphene and the substrate. This mechanism results in a density dependent electrical resistivity, that exhibits a sharp increase around room temperature, where it can become the dominant limiting factor of electron transport. The effects are weaker in doped bilayer graphene, due to the more conventional parabolic band dispersion.

cond-mat.mes-hall↗
arXiv2007

Transmission through a biased graphene bilayer barrier

We study the electronic transmission through a graphene bilayer in the presence of an applied bias between layers. We consider different geometries involving interfaces between both a monolayer and a bilayer and between two bilayers. The applied bias opens a sizable gap in the spectrum inside the bilayer barrier region, thus leading to large changes in the transmission probability and electronic conductance that are controlled by the applied bias.

cond-mat.mes-hall↗