arXiv subjects

F. Guinea

Publications and source records attributed to F. Guinea.

At least 127 records · Page 7Linked to original sources

arXiv2007

Electronic transport in graphene: A semi-classical approach including midgap states

Using the semi-classical Boltzmann theory, we calculate the conductivity as function of the carrier density. As usually, we include the scattering from charged impurities, but conclude that the estimated impurity density is too low in order to explain the experimentally observed mobilities. We thus propose an additional scattering mechanism involving midgap states which leads to a similar k-dependence of the relaxation time as charged impurities. The new scattering mechanism can account for the experimental findings such as the sublinear behavior of the conductivity versus gate voltage and the increase of the minimal conductivity for clean samples. We also discuss temperature dependent scattering due to acoustic phonons.

cond-mat.mes-hall↗

arXiv2007

Substrate-induced band gap opening in epitaxial graphene

Graphene has shown great application potentials as the host material for next generation electronic devices. However, despite its intriguing properties, one of the biggest hurdles for graphene to be useful as an electronic material is its lacking of an energy gap in the electronic spectra. This, for example, prevents the use of graphene in making transistors. Although several proposals have been made to open a gap in graphene's electronic spectra, they all require complex engineering of the graphene layer. Here we show that when graphene is epitaxially grown on the SiC substrate, a gap of ~ 0.26 is produced. This gap decreases as the sample thickness increases and eventually approaches zero when the number of layers exceeds four. We propose that the origin of this gap is the breaking of sublattice symmetry owing to the graphene-substrate interaction. We believe our results highlight a promising direction for band gap engineering of graphene.

cond-mat.mtrl-sci↗

arXiv2007

Biased bilayer graphene: semiconductor with a gap tunable by electric field effect

We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magneto-transport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to mid-infrared energies to a value as large as 0.3 eV by using fields of < 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime.

cond-mat.mtrl-sci↗

arXiv2007

Coulomb blockade in graphene nanoribbons

We propose that recent transport experiments revealing the existence of an energy gap in graphene nanoribbons may be understood in terms of Coulomb blockade. Electron interactions play a decisive role at the quantum dots which form due to the presence of necks arising from the roughness of the graphene edge. With the average transmission as the only fitting parameter, our theory shows good agreement with the experimental data.

cond-mat.mes-hall↗

arXiv2007

Dissipation in graphene and nanotube resonators

Different damping mechanisms in graphene nanoresonators are studied: charges in the substrate, ohmic losses in the substrate and the graphene sheet, breaking and healing of surface bonds (Velcro effect), two level systems, attachment losses, and thermoelastic losses. We find that, for realistic structures and contrary to semiconductor resonators, dissipation is dominated by ohmic losses in the graphene layer and metallic gate. An extension of this study to carbon nanotube-based resonators is presented.

cond-mat.mes-hall↗

arXiv2007

Periodically rippled graphene: growth and spatially resolved electronic structure

We studied the growth of an epitaxial graphene monolayer on Ru(0001). The graphene monolayer covers uniformly the Ru substrate over lateral distances larger than several microns reproducing the structural defects of the Ru substrate. The graphene is rippled with a periodicity dictated by the difference in lattice parameter between C and Ru. The theoretical model predict inhomogeneities in the electronic structure. This is confirmed by measurements in real space by means of scanning tunnelling spectroscopy. We observe electron pockets at the higher parts of the ripples.

cond-mat.mtrl-sci↗

arXiv2007

Localized states at zigzag edges of bilayer graphene

We report the existence of zero energy surface states localized at zigzag edges of bilayer graphene. Working within the tight-binding approximation we derive the analytic solution for the wavefunctions of these peculiar surface states. It is shown that zero energy edge states in bilayer graphene can be divided into two families: (i) states living only on a single plane, equivalent to surface states in monolayer graphene; (ii) states with finite amplitude over the two layers, with an enhanced penetration into the bulk. The bulk and surface (edge) electronic structure of bilayer graphene nanoribbons is also studied, both in the absence and in the presence of a bias voltage between planes.

cond-mat.mes-hall↗

arXiv2007

Quantum Hall effect in carbon nanotubes and curved graphene strips

We develop a long wavelength approximation in order to describe the low-energy states of carbon nanotubes in a transverse magnetic field. We show that, in the limit where the square of the magnetic length $l = \sqrt{\hbar c /e B}$ is much larger than the $C$-$C$ distance times the nanotube radius $R$, the low-energy theory is given by the linear coupling of a two-component Dirac spinor to the corresponding vector potential. We investigate in this regime the evolution of the band structure of zig-zag nanotubes for values of $R/l > 1$, showing that for radius $R \approx 20$ nm a clear pattern of Landau levels start to develop for magnetic field strength $B \gtrsim 10$ T. The levels tend to be four-fold degenerate, and we clarify the transition to the typical two-fold degeneracy of graphene as the nanotube is unrolled to form a curved strip. We show that the dynamics of the Dirac fermions leads to states which are localized at the flanks of the nanotube and that carry chiral currents in the longitudinal direction. We discuss the possibility to observe the quantization of the Hall conductivity in thick carbon nanotubes, which should display steps at even multiples of $2 e^2/h$, with values doubled with respect to those in the odd-integer quantization of graphene.

cond-mat.mes-hall↗

arXiv2007

Dissipation due to two-level systems in nano-mechanical devices

We analyze the dissipation of the frequency vibrations of nano-mechanical devices. We show that the coupling between flexural modes and two-level systems leads to sub-ohmic dissipation. The inverse quality factor of the low energy vibrations depends on temperature as $Q^{-1} (T) \approx Q_0 + C T^{1/3}$, providing a quantitative description of the experimental data.

cond-mat.mes-hall↗

arXiv2007

Fermi Liquid Theory of a Fermi Ring

We study the effect of electron-electron interactions in the electronic properties of a biased graphene bilayer. This system is a semiconductor with conduction and valence bands characterized by an unusual ``mexican-hat'' dispersion. We focus on the metallic regime where the chemical potential lies in the ``mexican-hat'' in the conduction band, leading to a topologically non-trivial Fermi surface in the shape of a ring. We show that due to the unusual topology of the Fermi surface electron-electron interactions are greatly enhanced. We discuss the possibility of an instability towards a ferromagnetic phase due to this enhancement. We compute the electronic polarization function in the random phase approximation and show that, while at low energies the system behaves as a Fermi liquid (albeit with peculiar Friedel oscillations), at high frequencies it shows a highly anomalous response when compare to ordinary metals.

cond-mat.mes-hall↗

arXiv2007

Transverse transport in graphite

Graphite is a layered material showing a strong anisotropy. Among the unconventional properties reported by experiments, the electronic transport along the c-axis, which has direct implications in order to build graphitic devices, remains a controversial topic. We study the influence of inelastic scattering on the electron tunnelling between layers. In the presence of electron electron interactions, tunnelling processes are modified by inelastic scattering events.

cond-mat.str-el↗

arXiv2007

Dynamical polarization of graphene at finite doping

The polarization of graphene is calculated exactly within the random phase approximation for arbitrary frequency, wave vector, and doping. At finite doping, the static susceptibility saturates to a constant value for low momenta. At $q=2 k_{F}$ it has a discontinuity only in the second derivative. In the presence of a charged impurity this results in Friedel oscillations which decay with the same power law as the Thomas Fermi contribution, the latter being always dominant. The spin density oscillations in the presence of a magnetic impurity are also calculated. The dynamical polarization for low $q$ and arbitrary $ω$ is employed to calculate the dispersion relation and the decay rate of plasmons and acoustic phonons as a function of doping. The low screening of graphene, combined with the absence of a gap, leads to a significant stiffening of the longitudinal acoustic lattice vibrations.

cond-mat.mes-hall↗

arXiv2006

Electron-electron interactions and the phase diagram of a graphene bilayer

We study the effects of long and short-range electron-electron interactions in a graphene bilayer. Using a variational wavefunction technique we show that in the presence of long-range Coulomb interactions the clean bilayer is always unstable to electron and hole pocket formation with a finite ferromagnetic polarization. Furthermore, we argue that short-range electron-electron interactions lead to a staggered orientation of the ordered ferromagnetic moment in each layer (that is, c-axis antiferromagnetism). We also comment on the effects of doping and trigonal distortions of the electronic bands.

cond-mat.str-el↗

arXiv2006

Charge distribution and screening in layered graphene systems

The charge distribution induced by external fields in finite stacks of graphene planes, or in semiinfinite graphite is considered. The interlayer electronic hybridization is described by a nearest neighbor hopping term, and the charge induced by the self consistent electrostatic potential is calculated within linear response (RPA). The screening properties are determined by contributions from inter- and intraband electronic transitions. In neutral systems, only interband transitions contribute to the charge polarizability, leading to insulating-like screening properties, and to oscillations in the induced charge, with a period equal to the interlayer spacing. In doped systems, we find a screening length equivalent to 2-3 graphene layers, superimposed to significant charge oscillations.

cond-mat.mes-hall↗

arXiv2006

Self-energy corrections to anisotropic Fermi surfaces

The electron-electron interactions affect the low-energy excitations of an electronic system and induce deformations of the Fermi surface. These effects are especially important in anisotropic materials with strong correlations, such as copper oxides superconductors or ruthenates. Here we analyze the deformations produced by electronic correlations in the Fermi surface of anisotropic two-dimensional systems, treating the regular and singular regions of the Fermi surface on the same footing. Simple analytical expressions are obtained for the corrections, based on local features of the Fermi surface. It is shown that, even for weak local interactions, the behavior of the self-energy is non trivial, showing a momentum dependence and a self-consistent interplay with the Fermi surface topology. Results are compared to experimental observations and to other theoretical results.

cond-mat.str-el↗

arXiv2006

Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps

A continuum model for the effective spin orbit interaction in graphene is derived from a tight-binding model which includes the $π$ and $σ$ bands. We analyze the combined effects of the intra-atomic spin-orbit coupling, curvature, and applied electric field, using perturbation theory. We recover the effective spin-orbit Hamiltonian derived recently from group theoretical arguments by Kane and Mele. We find, for flat graphene, that the intrinsic spin-orbit coupling $\Hi \propto Δ^ 2$ and the Rashba coupling due to a perpendicular electric field ${\cal E}$, $Δ_{\cal E} \propto Δ$, where $Δ$ is the intra-atomic spin-orbit coupling constant for carbon. Moreover we show that local curvature of the graphene sheet induces an extra spin-orbit coupling term $Δ_{\rm curv} \propto Δ$. For the values of $\cal E$ and curvature profile reported in actual samples of graphene, we find that $\Hi < Δ_{\cal E} \lesssim Δ_{\rm curv}$. The effect of spin-orbit coupling on derived materials of graphene, like fullerenes, nanotubes, and nanotube caps, is also studied. For fullerenes, only $\Hi$ is important. Both for nanotubes and nanotube caps $Δ_{\rm curv}$ is in the order of a few Kelvins. We reproduce the known appearance of a gap and spin-splitting in the energy spectrum of nanotubes due to the spin-orbit coupling. For nanotube caps, spin-orbit coupling causes spin-splitting of the localized states at the cap, which could allow spin-dependent field-effect emission.

cond-mat.mes-hall↗

arXiv2006

Intervalley scattering, long-range disorder, and effective time reversal symmetry breaking in graphene

We discuss the effect of certain types of static disorder, like that induced by curvature or topological defects, on the quantum correction to the conductivity in graphene. We find that when the intervalley scattering time is long or comparable to $τ_ϕ$, these defects can induce an effective time reversal symmetry breaking of the hamiltonian associated to each one of the two valleys in graphene. The phenomenon suppresses the magnitude of the quantum correction to the conductivity and may result in the complete absence of a low field magnetoresistance, as recently found experimentally. Our work shows that a quantitative description of weak localization in graphene must include the analysis of new regimes, not present in conventional two dimensional electron gases.

cond-mat.mes-hall↗

arXiv2006

Dissipation-driven quantum phase transitions in a Tomonaga-Luttinger liquid electrostatically coupled to a metallic gate

The dissipation induced by a metallic gate on the low-energy properties of interacting 1D electron liquids is studied. As function of the distance to the gate, or the electron density in the wire, the system undergoes a quantum phase transition from the Tomonaga-Luttinger liquid state to two kinds of dissipative phases, one of them with a finite spatial correlation length. We also define a dual model, which describes an attractive one dimensional metal with a Josephson coupling to a dirty metallic lead.

cond-mat.mes-hall↗