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F. Paolucci

Publications and source records attributed to F. Paolucci.

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Background of the BULLKID detector array operated with moderate shield on surface

We present the operation with moderate radiation shield in a surface laboratory of BULLKID (BULky and Low-threshold Kinetic Inductance Detector), a cryogenic detector for searches of light Dark Matter or Coherent Elastic Neutrino-Nucleus Scattering. The detector consists of an array of 60 cubic silicon particle absorbers of 0.34 g each, sensed by cryogenic kinetic inductance detectors. The analysis presented focuses on data from 15 elements of the array, with two central units used to evaluate the background and with their surrounding elements used as veto. The low energy spectrum resulting from an exposure of 290 hours to ambient backgrounds, acquired with the use of external and internal radiation shields, is compatible with the simulations at the level of $(6.8\pm0.4\,{\rm stat.}\pm0.1\,{\rm syst.})\times10^4$ counts / keV kg days from 2 keV down to an energy of 600 eV. The region between 225 eV and 600 eV shows a rise in background in disagreement with the simulations, while not sharing some of the key traits of the low energy excess observed in other cryogenic experiments. The high energy spectrum shape is in overall agreement with the simulations and displays the typical particle-induced X-ray emission of the surrounding lead.

hep-ex

Superconducting properties of lifted-off Niobium nanowires

Hybrid superconductor/semiconductor devices play a crucial role in advancing quantum science and technology by merging the properties of superconductors and semiconductors. To operate these devices at high temperature, Niobium could substitute the widespread aluminum as superconducting element. Niobium devices show the best superconducting properties when shaped by etching, but this technique is often incompatible with semiconductors and two-dimensional materials. Our work investigates the influence of oxygen diffusion on the superconducting transition of Nb nanowires fabricated by lift-off technique. To this scope, we fabricate and measure Nb devices of different width (W) and thickness (t). By using the Berezinskii-Kosterlitz-Thouless (BKT) model for charge transport, we demonstrate that our nanowires behave as two-dimensional superconductors regardless of W and t. While the normal-state transition temperature (TN) remains constant with decreasing W, the temperature of the fully superconducting state (TS) decreases. Thus, the superconducting transition width ({\delta}TC) increases as W shrinks, due to oxygen diffusion from the lithography resist occurring during deposition. These insights provide essential knowledge for optimizing Nb-based hybrid quantum devices, paving the way for operating temperatures above 2 K and contributing to the development of next-generation quantum technologies.

cond-mat.supr-con

Projected sensitivity to light WIMP-like particles of the BULLKID-DM experiment

BULLKID-DM is an experiment designed for the direct searches of particle dark matter candidates with mass around 1 GeV, or below, and cross-section with nucleons smaller than $10^{-40}$ cm$^2$. The detector consists of a stack of diced silicon wafers, acting as arrays of particle absorbers, sensed by multiplexed Kinetic Inductance Detectors. The target will amount to 800 g subdivided in more than 2000 silicon dice, with the aim of controlling the background from natural radioactivity by creating a fully active structure and by applying fiducialization techniques. In this work we present the projected sensitivity of BULLKID-DM to light WIMP-like particles considering also the other future experiments in the field.

physics.ins-det

Energy calibration of bulk events in the BULLKID detector

BULLKID is a cryogenic, solid-state detector designed for direct searches of particle Dark Matter candidates, with mass $\lesssim 1$ GeV/c$^2$, and coherent neutrino-nucleus scattering. It is based on an array of dice carved in 5 mm thick silicon crystal, sensed by phonon-mediated Kinetic Inductance Detectors. In previous works, the array was calibrated with bursts of optical photons, which are absorbed in the first hundreds nanometers of the dice and give rise to surface events. In this work, we present the reconstruction of bulk events through the 59.5 keV $\gamma$-ray generated by an $^{241}$Am source, which emulates more closely the interaction of Dark Matter and neutrinos. The peak resolution is $5\%~(\sigma)$ and its position is shifted by less than $10\%$ with respect to the optical calibration. We observe that the resolution is further improved by a factor $2$ combining the signal from neighboring dice. These results confirm the performance of the detector in view of the physics goals of the BULLKID-DM experiment for dark matter search.

physics.ins-det

Real-Time Readout System Design for the BULLKID-DM Experiment: Enhancing Dark Matter Search Capabilities

The BULLKID-DM experiment aims to detect WIMP-like potential Dark Matter particles with masses below 1 GeV/c^2. Sensing these particles is challenging, as it requires nuclear recoil detectors characterized by high exposure and an energy threshold in the order of 100 eV, thus exceeding the capabilities of conventional semiconductor detectors. BULLKID-DM intends to tackle this challenge by using cryogenic Kinetic Inductance Detectors (MKIDs) with exceptional energy thresholds to sense a target with a total mass of 800 g across 16 wafers, divided into over 2000 individually instrumented silicon dice. The MKIDs on each wafer are coupled to a single transmission line and read using a frequency division multiplexing approach by the room-temperature data acquisition. In this contribution, we describe and assess the design of the room-temperature readout electronics system, including the selected hardware components and the FPGA firmware which contains the real-time signal processing stages for tone generation, frequency demultiplexing, and event triggering. We evaluate the system on the ZCU216 board, a commercial evaluation card built around a Radio-Frequency System-on-Chip (RFSoC) with integrated high-speed DACs and ADCs, and connected it to a custom-designed analog front-end for signal conditioning.

physics.ins-det

Lessons learned after three years of SPIDER operation and the first MITICA integrated tests

ITER envisages the use of two heating neutral beam injectors plus an optional one as part of the auxiliary heating and current drive system. The 16.5 MW expected neutral beam power per injector is several notches higher than worldwide existing facilities. A Neutral Beam Test Facility (NBTF) was established at Consorzio RFX, exploiting the synergy of two test beds, SPIDER and MITICA. SPIDER is dedicated to developing and characterizing large efficient negative ion sources at relevant parameters in ITER-like conditions: source and accelerator located in the same vacuum where the beam propagates, immunity to electromagnetic interferences of multiple radio-frequency (RF) antennas, avoidance of RF-induced discharges on the outside of the source. Three years of experiments on SPIDER have addressed to the necessary design modifications to enable full performances. The source is presently under a long shut-down phase to incorporate learnings from the experimental campaign. Parallelly, developments on MITICA, the full-scale prototype of the ITER NBI featuring a 1 MV accelerator and ion neutralization, are underway including manufacturing of in-vessel components, while power supplies and auxiliary plants are already under final testing and commissioning. Integration, commissioning and tests of the 1MV power supplies are essential for this first-of-kind system, unparalleled both in research and industry field. The integrated test to confirm 1MV output by combining invertor systems, DC generators and transmission lines extracted errors/accidents in some components. To realize a concrete system for ITER, solutions for the repair and the improvement of the system were developed. Hence, NBTF is emerging as a necessary facility, due to the large gap with existing injectors, effectively dedicated to identify issues and find solutions to enable successful ITER NBI operations in a time bound fashion.

physics.plasm-ph

Inductive Superconducting Quantum Interference Proximity Transistor: the L-SQUIPT

The design for an inductive superconducting quantum interference proximity transistor with enhanced performance, the L-SQUIPT, is presented and analyzed. The interferometer is based on a double-loop structure, where each ring comprises a superconductor-normal metal-superconductor mesoscopic Josephson weak-link and the read-out electrode is implemented in the form of a superconducting tunnel probe. Our design allows both to improve the coupling of the transistor to the external magnetic field and to increase the characteristic magnetic flux transfer functions, thereby leading to an improved ultrasensitive quantum limited magnetometer. The L-SQUIPT behavior is analyzed in both the dissipative and the dissipationless Josephson-like operation modes, in the dissipative or in the dissipationless Josephson-like operation mode in the latter case by exploiting both an inductive and a dispersive readout scheme. The improved performance makes the L-SQUIPT promising for magnetic field detection as well as for specific applications in quantum technology, where a responsive dispersive magnetometry at milliKelvin temperatures is required.

cond-mat.mes-hall

Preliminary demonstration of a persistent Josephson phase-slip memory cell with topological protection

Superconducting computing promises enhanced computational power in both classical and quantum approaches. Yet, scalable and fast superconducting memories are not implemented. Here, we propose a fully superconducting memory cell based on the hysteretic phase-slip transition existing in long aluminum nanowire Josephson junctions. Embraced by a superconducting ring, the memory cell codifies the logic state in the direction of the circulating persistent current, as commonly defined in flux-based superconducting memories. But, unlike the latter, the hysteresis here is a consequence of the phase-slip occurring in the long weak link and associated to the topological transition of its superconducting gap. This disentangle our memory scheme from the large-inductance constraint, thus enabling its miniaturization. Moreover, the strong activation energy for phase-slip nucleation provides a robust topological protection against stochastic phase-slips and magnetic-flux noise. These properties make the Josephson phase-slip memory a promising solution for advanced superconducting classical logic architectures or flux qubits.

cond-mat.mes-hall

Metallic supercurrent field-effect transistor

In their original formulation of superconductivity, the London brothers predicted the exponential suppression of an $electrostatic$ field inside a superconductor over the so-called London penetration depth, $λ_L$. Despite a few experiments indicating hints of perturbation induced by electrostatic fields, no clue has been provided so far on the possibility to manipulate metallic superconductors via field-effect. Here we report field-effect control of the supercurrent in $all$-metallic transistors made of different Bardeen-Cooper-Schrieffer (BCS) superconducting thin films. At low temperature, our field-effect transistors (FETs) show a monotonic decay of the critical current under increasing electrostatic field up to total quenching for gate voltage values as large as $\pm 40$V in titanium-based devices. This $bipolar$ field effect persists up to $\sim 85\%$ of the critical temperature ($\sim 0.41$K), and in the presence of sizable magnetic fields. A similar behavior was observed in aluminum thin film FETs. A phenomenological theory accounts for our observations, and points towards the interpretation in terms of an electric-field-induced perturbation propagating inside the superconducting film. In our understanding, this affects the pairing potential and quenches the supercurrent. These results could represent a groundbreaking asset for the realization of an $all$-metallic superconducting field-effect electronics and leading-edge quantum information architectures.

cond-mat.mes-hall

Ultrafast lithium diffusion in bilayer graphene

Solid mixed conductors with significant ionic as well as electronic conduction play a pivotal role for mass transfer and storage as required in battery electrodes. Single-phase materials with simultaneously high electronic and ionic conductivity at room temperature are hard to come by and therefore multi-phase systems with separate ion and electron channels have been put forward instead. Here, we explore bilayer graphene as a true single phase mixed conductor and demonstrate ultrafast lithium diffusion exceeding diffusion in bulk graphite by an order of magnitude and even surpassing diffusion of sodium chloride in liquid water. To this end, an innovative electrochemical cell architecture has been developed where the redox-reaction forcing lithium intercalation is localized at a protrusion of the device only. Its remainder consists of pristine bilayer graphene unperturbed by an electrolyte. The geometry lends itself to the use of magnetotransport machinery known from mesoscopic low-dimensional physics. Time dependent Hall measurements across spatially displaced Hall probes deliver a direct view on the in-plane diffusion kinetics. The device layout with a perimeterial electrochemical cell is transferable to other 2D materials as well as thin films and may promote a paradigm shift on the use of electrolytes in on-chip experiments.

cond-mat.mes-hall

Temperature Dependence of Electric Transport in Few-layer Graphene under Large Charge Doping Induced by Electrochemical Gating

The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different temperatures and in view of the theoretically predicted possibility to reach the superconducting state in such extreme conditions. Here we present the results obtained in 3-, 4- and 5-layer graphene devices down to 3.5 K, where a large surface charge density up to about 6.8x10^14 cm^(-2) has been reached by employing a novel polymer electrolyte solution for the electrochemical gating. In contrast with recent results obtained in single-layer graphene, the temperature dependence of the sheet resistance between 20 K and 280 K shows a low-temperature dominance of a T^2 component - that can be associated with electron-electron scattering - and, at about 100 K, a crossover to the classic electron-phonon regime. Unexpectedly this crossover does not show any dependence on the induced charge density, i.e. on the large tuning of the Fermi energy.

cond-mat.mes-hall

Huge field-effect surface charge injection and conductance modulation in metallic thin films by electrochemical gating

The field-effect technique, popular thanks to its application in common field-effect transistors, is here applied to metallic thin films by using as a dielectric a novel polymer electrolyte solution. The maximum injected surface charge, determined by a suitable modification of a classic method of electrochemistry called double-step chronocoulometry, reached some units in 10^15 charges/cm^2. At room temperature, relative variations of resistance up to 8%, 1.9% and 1.6% were observed in the case of gold, silver and copper, respectively and, if the films are thick enough (> 25 nm), results can be nicely explained within a free-electron model with parallel resistive channels. The huge charge injections achieved make this particular field-effect technique very promising for a vast variety of materials such as unconventional superconductors, graphene and 2D-like materials.

cond-mat.mes-hall

Large conductance modulation of gold thin films by huge charge injection via electrochemical gating

By using an electrochemical gating technique with a new combination of polymer and electrolyte, we were able to inject surface charge densities n_2D as high as 3.5 \times 10^15 e/cm^2 in gold films and to observe large relative variations in the film resistance, DeltaR/R', up to 10% at low temperature. DeltaR/R' is a linear function of n_2D - as expected within a free-electron model - if the film is thick enough (> 25 nm), otherwise a tendency to saturation due to size effects is observed. The application of this technique to 2D materials will allow extending the field-effect experiments to a range of charge doping where giant conductance modulations and, in some cases, even the occurrence of superconductivity are expected.

cond-mat.mes-hall