arXiv subjects

Farid El Gabaly

Publications and source records attributed to Farid El Gabaly.

7 recordsLinked to original sources

arXiv2011

Three-Fold Diffraction Symmetry in Epitaxial Graphene and the SiC Substrate

The crystallographic symmetries and spatial distribution of stacking domains in graphene films on SiC have been studied by low energy electron diffraction (LEED) and dark field imaging in a low energy electron microscope (LEEM). We find that the graphene diffraction spots from 2 and 3 atomic layers of graphene have 3-fold symmetry consistent with AB (Bernal) stacking of the layers. On the contrary, graphene diffraction spots from the buffer layer and monolayer graphene have apparent 6-fold symmetry, although the 3-fold nature of the satellite spots indicates a more complex periodicity in the graphene sheets.

cond-mat.mtrl-sci↗

arXiv2010

In-plane orientation effects on the electronic structure, stability and Raman scattering of monolayer graphene on Ir(111)

We employ angle-resolved photoemission spectroscopy (ARPES) to investigate the electronic structures of two rotational variants of epitaxial, single-layer graphene on Ir(111). As grown, the more-abundant R0 variant is nearly charge-neutral, with strong hybridization between graphene and Ir bands near the Fermi level. The graphene Fermi surface and its replicas exactly coincide with Van Hove singularities in the Ir Fermi surface. Sublattice symmetry breaking introduces a small gap-inducing potential at the Dirac crossing, which is revealed by n-doping the graphene using K atoms. The energy gaps between main and replica bands (originating from the moiré interference pattern between graphene and Ir lattices) is shown to be non-uniform along the mini- zone boundary due to hybridization with Ir bands. An electronically mediated interaction is proposed to account for the stability of the R0 variant. The variant rotated 30° in-plane, R30, is p-doped as grown and K doping reveals no band gap at the Dirac crossing. No replica bands are found in ARPES measurements. Raman spectra from the R30 variant exhibit the characteristic phonon modes of graphene, while R0 spectra are featureless. These results show that the film/substrate interaction changes from chemisorption (R0) to physisorption (R30) with in-plane orientation. Finally, graphene-covered Ir has a work function lower than the clean substrate but higher than graphite.

cond-mat.mtrl-sci↗

arXiv2010

Measuring individual overpotentials in an operating solid-oxide electrochemical cell

We use photo-electrons as a non-contact probe to measure local electrical potentials in a solid-oxide electrochemical cell. We characterize the cell in operando at near-ambient pressure using spatially-resolved X-ray photoemission spectroscopy. The overpotentials at the interfaces between the Ni and Pt electrodes and the yttria-stabilized zirconia (YSZ) electrolyte are directly measured. The method is validated using electrochemical impedance spectroscopy. Using the overpotentials, which characterize the cell's inefficiencies, we compare without ambiguity the electro-catalytic efficiencies of Ni and Pt, finding that on Ni H_2O splitting proceeds more rapidly than H2 oxidation, while on Pt, H2 oxidation proceeds more rapidly than H2O splitting.

physics.chem-ph↗

arXiv2009

Real-Time Observation of Reactive Spreading of Gold on Silicon

The spreading of a bilayer gold film propagating outward from gold clusters, which are pinned to clean Si(111), is imaged in real time by low energy electron microscopy. By monitoring the evolution of the boundary of the gold film at fixed temperature, a linear dependence of the spreading radius on time is found. The measured spreading velocities in the temperature range of 800 < T < 930 K varied from below 100 pm/s to 50 nm/s. We show that the spreading rate is limited by the reaction to form Au silicide, and the spreading velocity is likely regulated by the reconstruction of the gold silicide that occurs at the interface.

cond-mat.mes-hall↗

arXiv2007

Labyrinthine Island Growth during Pd/Ru(0001) Heteroepitaxy

Using low energy electron microscopy we observe that Pd deposited on Ru only attaches to small sections of the atomic step edges surrounding Pd islands. This causes a novel epitaxial growth mode in which islands advance in a snakelike motion, giving rise to labyrinthine patterns. Based on density functional theory together with scanning tunneling microscopy and low energy electron microscopy we propose that this growth mode is caused by a surface alloy forming around growing islands. This alloy gradually reduces step attachment rates, resulting in an instability that favors adatom attachment at fast advancing step sections.

cond-mat.mtrl-sci↗

arXiv2007

Morphology of graphene thin film growth on SiC(0001)

Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as applications-oriented point of view. Here we study the emerging morphology of in-vacuo prepared graphene films using low energy electron microscopy (LEEM) and angle-resolved photoemission (ARPES). We obtain an identification of single and bilayer of graphene film by comparing the characteristic features in electron reflectivity spectra in LEEM to the PI-band structure as revealed by ARPES. We demonstrate that LEEM serves as a tool to accurately determine the local extent of graphene layers as well as the layer thickness.

cond-mat.mtrl-sci↗

arXiv2006

Imaging Spin Reorientation Transitions in Consecutive Atomic Co layers

By means of spin-polarized low-energy electron microscopy (SPLEEM) we show that the magnetic easy-axis of one to three atomic-layer thick cobalt films on ruthenium crystals changes its orientation twice during deposition: one-monolayer and three-monolayer thick films are magnetized in-plane, while two-monolayer films are magnetized out-of-plane, with a Curie temperature well above room temperature. Fully-relativistic calculations based on the Screened Korringa-Kohn-Rostoker (SKKR) method demonstrate that only for two-monolayer cobalt films the interplay between strain, surface and interface effects leads to perpendicular magnetization.

cond-mat.mtrl-sci↗