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arXiv · 0710.0877

Morphology of graphene thin film growth on SiC(0001)

Taisuke Ohta·Farid El Gabaly·Aaron Bostwick·Jessica McChesney·Konstantin V. Emtsev·Andreas K. Schmid·Thomas Seyller·Karsten Horn·Eli Rotenberg
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Abstract

Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as applications-oriented point of view. Here we study the emerging morphology of in-vacuo prepared graphene films using low energy electron microscopy (LEEM) and angle-resolved photoemission (ARPES). We obtain an identification of single and bilayer of graphene film by comparing the characteristic features in electron reflectivity spectra in LEEM to the PI-band structure as revealed by ARPES. We demonstrate that LEEM serves as a tool to accurately determine the local extent of graphene layers as well as the layer thickness.

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Taisuke Ohta, Farid El Gabaly, Aaron Bostwick, Jessica McChesney, Konstantin V. Emtsev, Andreas K. Schmid, Thomas Seyller, Karsten Horn, Eli Rotenberg. 2007-10-03. Morphology of graphene thin film growth on SiC(0001). https://doi.org/10.1088/1367-2630%2F10%2F2%2F023034

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