arXiv subjects

Fei Yao

Publications and source records attributed to Fei Yao.

30 records · Page 2Linked to original sources

arXiv2022

Renormalization of transverse-momentum-dependent parton distribution on the lattice

To calculate the transverse-momentum-dependent parton distribution functions (TMDPDFs) from lattice QCD, an important goal yet to be realized, it is crucial to establish a viable non-perturbative renormalization approach for linear divergences in the corresponding Euclidean quasi-TMDPDF correlators in large-momentum effective theory. We perform a first systematic study of the renormalization property of the quasi-TMDPDFs by calculating the relevant matrix elements in a pion state at 5 lattice spacings ranging from 0.03 fm to 0.12 fm. We demonstrate that the square root of the Wilson loop combined with the short distance hadron matrix element provides a successful method to remove all ultraviolet divergences of the quasi-TMD operator, and thus provide the necessary justification to perform a continuum limit calculation of TMDPDFs. In contrast, the popular RI/MOM renormalization scheme fails to eliminate all linear divergences.

hep-lat↗

arXiv2022

Dative epitaxy of commensurate monocrystalline covalent-van der Waals moiré supercrystal

Realizing van der Waals (vdW) epitaxy in the 80s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW interactions, there is little control over film qualities by the substrate. Typically, discrete domains with a spread of misorientation angles are formed, limiting the applicability of vdW epitaxy. Here we report the epitaxial growth of monocrystalline, covalent Cr5Te8 2D crystals on monolayer vdW WSe2 by chemical vapor deposition, driven by interfacial dative bond formation. The lattice of Cr5Te8, with a lateral dimension of a few ten microns, is fully commensurate with that of WSe2 via 3 x 3 (Cr5Te8)-7 x 7 (WSe2) supercell matching, forming a single crystalline moire superlattice. Our work has established a conceptually distinct paradigm of thin film epitaxy termed dative epitaxy, which takes full advantage of covalent epitaxy with chemical bonding for fixing the atomic registry and crystal orientation, while circumventing its stringent lattice matching and processing compatibility requirements; conversely, it ensures the full flexibility of vdW epitaxy, while avoiding its poor orientation control. Cr5Te8 2D crystals grown by dative epitaxy exhibit square magnetic hysteresis, suggesting minimized interfacial defects that can serve as pinning sites.

cond-mat.mtrl-sci↗

arXiv2022

Two-parameter estimation with three-mode NOON state in a symmetric three-well system

We propose a scheme to realize two-parameter estimation via a Bose-Einstein condensates confined in a symmetric triple-well potential. The three-mode NOON state is prepared adiabatically as the initial state. The two parameters to be estimated are the phase differences between the wells. The sensitivity of this estimation scheme is studied by comparing quantum and classical Fisher information matrices. As a result, we find an optimal particle number measurement method. Moreover, the precision of this estimation scheme behaves the Heisenberg scaling under the optimal measurement.

quant-ph↗

arXiv2022

Pion and Kaon Distribution Amplitudes from Lattice QCD

We present the state-of-the-art lattice QCD calculation of the pion and kaon light-cone distribution amplitudes (DAs) using large-momentum effective theory. The calculation is done at three lattice spacings $a\approx\{0.06,0.09,0.12\}$ fm and physical pion and kaon masses, with the meson momenta $P_z = \{1.29,1.72,2.15\}$ GeV. The result is non-perturbatively renormalized in a recently proposed hybrid scheme with self renormalization, and extrapolated to the continuum as well as the infinite momentum limit. We find a significant deviation of the pion and kaon DAs from the asymptotic form, and a large $SU(3)$ flavor breaking effect in the kaon DA.

hep-lat↗

arXiv2021

Dual-Phase MoS$_2$ And MXene Nanohybrids for Efficient Electrocatalytic Hydrogen Evolution

Molybdenum Disulfide (MoS$_2$) has been recognized as a potential substitution of Platinum (Pt) for electrochemical hydrogen evolution reaction (HER). However, the broad adoption of MoS$_2$ is hindered by its limited number of active sites and relatively low inherent electrical conductivity. In this work, we demonstrated a synergistic enhancement of both active site exposure and electrical conductivity by a one-step solvothermal synthesis technique. The 1T-phase enriched MoS$_2$ was directly formed on the titanium carbide (Ti$_3$C$_2$Tx, MXene) with carbon nanotubes (CNTs) acting as crosslinks. The existence of edge-enriched metallic phase MoS$_2$, the conductive backbone of MXene along with the crosslinking function of CNTs clearly improved the overall electrical conductivity of the catalyst. Moreover, the integration of two-dimensional (2D) MoS$_2$ with MXene effectively suppressed the MXene oxidation and 2D layer restacking, leading to good catalytic stability. As a result, an overpotential of 169 mV and a low Tafel slope of 51 mV/dec was successfully achieved. This work provides a new route for 2D-based electrocatalyst engineering and sheds light on the development of the next-generation PGM-free HER electrocatalysts.

physics.chem-ph↗

arXiv2021

Covalent 2D Cr$_2$Te$_3$ ferromagnet

To broaden the scope of van der Waals 2D magnets, we report the synthesis and magnetism of covalent 2D magnetic Cr$_2$Te$_3$ with a thickness down to one-unit-cell. The 2D Cr$_2$Te$_3$ crystals exhibit robust ferromagnetism with a Curie temperature of 180 K, a large perpendicular anisotropy of 7*105 J m-3, and a high coercivity of ~ 4.6 kG at 20 K. First-principles calculations further show a transition from canted to collinear ferromagnetism, a transition from perpendicular to in-plane anisotropy, and emergent half-metallic behavior in atomically-thin Cr$_2$Te$_3$, suggesting its potential application for injecting carriers with high spin polarization into spintronic devices.

cond-mat.mes-hall↗

arXiv2020

Two-dimensional Cold Electron Transport for Steep-slope Transistors

Room-temperature Fermi-Dirac electron thermal excitation in conventional three-dimensional (3D) or two-dimensional (2D) semiconductors generates hot electrons with a relatively long thermal tail in energy distribution. These hot electrons set a fundamental obstacle known as the "Boltzmann tyranny" that limits the subthreshold swing (SS) and therefore the minimum power consumption of 3D and 2D field-effect transistors (FETs). Here, we investigated a novel graphene (Gr)-enabled cold electron injection where the Gr acts as the Dirac source to provide the cold electrons with a localized electron density distribution and a short thermal tail at room temperature. These cold electrons correspond to an electronic cooling effect with the effective electron temperature of ~145 K in the monolayer MoS2, which enable the transport factor lowering and thus the steep-slope switching (across for 3 decades with a minimum SS of 29 mV/decade at room temperature) for a monolayer MoS2 FET. Especially, a record-high sub-60-mV/decade current density (over 1 μA/μm) can be achieved compared to conventional steep-slope technologies such as tunneling FETs or negative capacitance FETs using 2D or 3D channel materials. Our work demonstrates the great potential of 2D Dirac-source cold electron transistor as an innovative steep-slope transistor concept, and provides new opportunities for 2D materials toward future energy-efficient nanoelectronics.

cond-mat.mes-hall↗

arXiv2020

Diode-like Selective Enhancement of Carrier Transport through Metal-Semiconductor Interface Decorated by Monolayer Boron Nitride

Two-dimensional (2D) semiconductors are promising material candidates for next-generation nanoelectronics. However, there are fundamental challenges related to their metal-semiconductor (MS) contacts which limit the performance potential for practical device applications. In this work, we exploit 2D monolayer hexagonal boron nitride (h-BN) as an ultrathin decorating layer to form a metal-insulator-semiconductor (MIS) contact, and demonstrate a novel diode-like selective enhancement of the carrier transport through it. Compared to the conventional MS contact, the MIS contact dominated by both thermionic emission and quantum tunneling can significantly reduce the contact resistance and boost the electron transport from the semiconductor to the metal, but has negligible effects on the electron transport oppositely. We also investigate the negative barrier height with the concept of carrier collection barrier, and show its critical role at the drain end for determining the overall transistor performance.

physics.app-ph↗

arXiv2020

Enhanced Carrier Transport by Transition Metal Doping in WS2 Field Effect Transistors

High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different doping strategies: (i) a "generalized" Cu doping by using randomly distributed Cu atoms along the channel and (ii) a "localized" Cu doping by adapting an ultrathin Cu layer at the metal-semiconductor interface. Compared to the pristine WS2 FETs, both the generalized Cu atomic dopant and localized Cu contact decoration can provide a Schottky-to-Ohmic contact transition owing to the reduced contact resistances by 1 - 3 orders of magnitude, and consequently elevate electron mobilities by 5 - 7 times higher. Our work demonstrates that the introduction of transition metal can be an efficient and reliable technique to enhance the carrier transport and device performance in 2D TMD FETs.

cond-mat.mtrl-sci↗

arXiv2018

Enhancing the sensitivity of rotation in a multi-atom Sagnac interferometer

We investigate quantum sensing of rotation with a multi-atom Sagnac interferometer and present multi-partite entangled states to enhance the sensitivity of rotation frequency. For studying the sensitivity, we first present a Hermitian generator with respect to the rotation frequency. The generator, which contains the Sagnac phase, is a linear superposition of a z component of the collective spin and a quadrature operator of collective bosons depicting the trapping modes, which enables us to conveniently study the quantum Fisher information (QFI) for any initial states. With the generator, we derive the general QFI which can be of square dependence on the particle number, leading to Heisenberg limit. And we further find that the QFI may be of biquadratic dependence on the radius of the ring which confines atoms, indicating that larger QFI is achieved by enlarging the radius. In order to obtain the square and biquadratic dependence, we propose to use partially and globally entangled states as inputs to enhance the sensitivity of rotation.

quant-ph↗

arXiv2018

Phase-space geometric Sagnac interferometer for rotation sensing

Quantum information processing with geometric features of quantum states may provide promising noise-resilient schemes for quantum metrology. In this work, we theoretically explore phase-space geometric Sagnac interferometers with trapped atomic clocks for rotation sensing, which could be intrinsically robust to certain decoherence noises and reach high precision. With the wave guide provided by sweeping ring-traps, we give criteria under which the well-known Sagnac phase is a pure or unconventional geometric phase with respect to the phase space. Furthermore, corresponding schemes for geometric Sagnac interferometers with designed sweeping angular velocity and interrogation time are presented, and the experimental feasibility is also discussed. Such geometric Sagnac interferometers are capable of saturating the ultimate precision limit given by the quantum Cramér-Rao bound.

quant-ph↗

arXiv2018

Localized Surface Plasmon Resonance on Two-Dimensional HfSe2 and ZrSe2

HfSe2 and ZrSe2 are newly discovered two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) with promising properties for future nanoelectronics and optoelectronics. We theoretically revealed the electronic and optical properties of these two emerging 2D semiconductors, and evaluated their performance for the application of localized surface plasmon resonance (LSPR) at extreme conditions: in-plane direction versus out-of-plane direction and monolayer versus multilayer. First, the energy band structure and dielectric constants were calculated for both the monolayer and multilayer structures using Kohn-Sham density functional theory (KS-DFT) with van der Waals (vdW) corrections. A parallel-band effect observed in the monolayer band structure indicates a strong light-matter interaction. Then, based on the calculated dielectric constants, the performance of the LSPR excited by Au sphere nanoparticles (NPs) was quantitatively characterized, including polarizability, scattering and absorption cross-sections, and radiative efficiency using Mie theory. For the multilayer HfSe2 and ZrSe2, the LSPR showed very comparable intensities in both the in-plane and out-of-plane directions, suggesting an isotropy-like light-matter interaction. In a comparison, the LSPR excited on the monolayer HfSe2 and ZrSe2 was clearly observed in the in-plane direction but effectively suppressed in the out-of-plane direction due to the unique anisotropic nature. In addition to this extraordinary anisotropy-to-isotropy transition as the layer number increases, a red-shift of the LSPR wavelength was also found. Our work has predicated the thickness-dependent anisotropic light-matter interaction on the emerging 2D semiconducting HfSe2 and ZrSe2, which holds great potential for broad optoelectronic applications such as sensing and energy conversion.

cond-mat.mtrl-sci↗