arXiv subjects

Feliciano Giustino

Publications and source records attributed to Feliciano Giustino.

At least 37 records · Page 2Linked to original sources

arXiv2025

First-principles electron-phonon interactions with self-consistent Hubbard interaction: an application to transparent conductive oxides

The ab initio computational method known as Hubbard-corrected density functional theory (DFT+$U$) captures well ground electronic structures of a set of solids that are poorly described by standard DFT alone. Since lattice dynamical properties are closely linked to electronic structures, the Hubbard-corrected density functional perturbation theory (DFPT+$U$) can calculate them at the same level of accuracy. To investigate the effects of $U$ on electron-phonon (el-ph) interactions, we implemented DFPT+$U$ with a Hartree-Fock-based pseudohybrid functional formalism to determine $U$ self-consistently and applied our method to compute optical and transport properties of transparent conductive oxides of CdO and ZnO. For CdO, we find that opening a band gap due to $U$ restores the long-range Fröhlich interaction and that its calculated mobility and absorption spectrum are in excellent agreement with experiments. For ZnO where a band gap already appears at the DFT level, DFPT+$U$ brings the results into much closer alignment with experiment, thus demonstrating improved accuracy of our method in dealing with el-ph interactions in these technologically important materials.

cond-mat.mtrl-sci↗

arXiv2025

Electron mobility in AlN from first principles

Aluminum nitride is a promising ultra-wide band gap semiconductor for optoelectronics and power electronics. However, its practical applications have been limited by challenges with doping and achieving high electrical conductivity. Recent advances in crystal quality and defect control have led to improvements in experimentally measured mobilities. In this work, we apply first-principles calculations to determine the upper limits of the electron mobility in AlN as a function of temperature, doping, and crystallographic orientation. We account for the combined effects of electron scattering by phonons and ionized impurity to model doped systems, and examine both full and partial ionization conditions. Our results show that the piezoelectric interaction from the long-range component of the acoustic modes is the dominant source of electron-phonon scattering at room temperature. Ionized-impurity scattering starts to dominate scattering at dopant concentrations above $10^{16}$ cm$^{-3}$, reducing the mobility by more than an order of magnitude in the high doping regime. Our calculated Hall mobility values are in good agreement with experimental data for samples with comparable dopant concentrations. We also find that electron mobilities as high as $956$ cm$^2$/V$\cdot$s could be achievable at lower dopant concentrations.

cond-mat.mtrl-sci↗

arXiv2025

Extreme-Band-Gap Semiconductors with Shallow Dopants and Mobile Carriers

The conventional distinction between semiconductors and insulators is often based on the magnitude of the band gap, with materials exhibiting gaps wider than 3 eV typically classified as insulators. However, the emergence of ultra-wide-band-gap (UWBG) semiconductors such as AlGaN, diamond, BN, and Ga2O3 challenges this paradigm for materials classification and raises fundamental questions about the upper bound of band gaps compatible with semiconducting behavior. Here we develop a computational-discovery strategy to identify semiconductors with band gaps exceeding that of AlN (6.2 eV), while retaining essential semiconducting properties such as shallow dopants and mobile charge carriers. We discover that materials composed of light elements in densely packed crystal structures exhibit wide band gaps and light carrier effective masses that enable shallow dopants, high mobility, and weak polaron binding. By applying the hydrogenic Bohr model and first-principles defect calculations - validated against available experimental data - to screen for materials with shallow dopants, we identify dopable compounds with gaps as wide as 9.5 eV that nonetheless host mobile charge carriers. Our findings demonstrate that semiconducting behavior persists even at extreme band gaps, far beyond conventional upper bounds traditionally associated with semiconductor materials.

cond-mat.mtrl-sci↗

arXiv2025

High-throughput screening of 2D materials identifies p-type monolayer WS$_2$ as potential ultra-high mobility semiconductor

2D semiconductors offer a promising pathway to replace silicon in next-generation electronics. Among their many advantages, 2D materials possess atomically-sharp surfaces and enable scaling the channel thickness down to the monolayer limit. However, these materials exhibit comparatively lower charge carrier mobility and higher contact resistance than 3D semiconductors, making it challenging to realize high-performance devices at scale. In this work, we search for high-mobility 2D materials by combining a high-throughput screening strategy with state-of-the-art calculations based on the ab initio Boltzmann transport equation. Our analysis singles out a known transition metal dichalcogenide, monolayer WS$_2$, as the most promising 2D semiconductor, with the potential to reach ultra-high room-temperature hole mobilities in excess of 1300 cm$^2$/Vs should Ohmic contacts and low defect densities be achieved. Our work also highlights the importance of performing full-blown ab initio transport calculations to achieve predictive accuracy, including spin-orbital couplings, quasiparticle corrections, dipole and quadrupole long-range electron-phonon interactions, as well as scattering by point defects and extended defects.

cond-mat.mtrl-sci↗

arXiv2025

Effects of Spin-Orbit Coupling and Thermal Expansion on the Phonon-limited Resistivity of Pb from First Principles

Using density functional theory calculations with spin-orbit coupling (SOC), we report on the temperature-dependent thermodynamical properties of Pb: electrical resistivity, thermal expansion (TE), heat capacity, bulk modulus and its pressure derivative. For the former, we employed the state-of-the-art ab initio Boltzmann Transport Equation formalism, and we calculated the effect of TE. In accordance with previous work, we show that SOC improves the description of the phonon dispersion and the resistivity. We argue that this is caused by a joint mutual effect of an increase in the electronic nesting and an increase in the electron-phonon coupling. Interestingly, including TE incorporates non-linearity into the resistivity at high temperatures, whose magnitude depends on whether SOC is included or not. We suggest that mechanisms beyond the quasi-harmonic approximation should be considered to get a better description of Pb with SOC at high temperatures.

cond-mat.mtrl-sci↗

arXiv2025

Robust Super-Moiré in Large Angle Single-Twist Bilayers

Forming long wavelength moiré superlattices (MSL) at small-angle twist van der Waals (vdW) bilayers has been a key approach to creating moiré flat bands. The small-angle twist, however, leads to strong lattice reconstruction, causing domain walls and moiré disorders, which pose considerable challenges in engineering such platforms. At large twist angles, the rigid lattices render a more robust, but shorter wavelength MSL, making it difficult to engineer flat bands. Here, we depict a novel approach to tailoring robust super-moiré (SM) structures that combines the advantages of both small-twist and large-twist transition metal dichalcogenides (TMDs) bilayers using only a single twist angle near a commensurate angle. Structurally, we unveil the spontaneous formation of a periodic arrangement of three inequivalent commensurate moiré (CM) stacking, where the angle deviation from the commensurate angle can tune the periodicity. Electronically, we reveal a large set of van Hove singularities (VHSs) that indicate strong band hybridization, leading to flat bands near the valence band maximum. Our study paves the way for a new platform of robust SM bilayers with structural rigidity and controllable wavelength, extending the investigation of the interplay among band topology, quantum geometry, and moiré superconductivity to the large twist angle regime.

cond-mat.mtrl-sci↗

arXiv2025

Towards MatCore: A Unified Metadata Standard for Materials Science

The materials science community seeks to support the FAIR principles for computational simulation research. The MatCore Project was recently launched to address this need, with the goal of developing an overall metadata framework and accompanying guidelines. This paper reports on the MatCore goals and overall progress. Historical background context is provided, including a review of the principles underlying successful core metadata standards. The paper also presents selected MatCore examples and discusses future plans.

cond-mat.mtrl-sci↗

arXiv2025

Quantum oscillations of holes in GaN

GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radio-frequency and power electronics. Suffering from inefficient hole doping and low hole mobility, quantum oscillations in p-type GaN have not been observed, hindering fundamental studies of valence bands and hole transport in GaN. Here, we present the first observation of quantum oscillations of holes in GaN. Shubnikov-de Haas (SdH) oscillations in hole resistivity are observed in a quantum-confined two-dimensional hole gas at a GaN/AlN interface, where polarization-induced doping overcomes thermal freeze-out, and a sharp and clean interface boosts the hole mobility enough to unmask the quantum oscillations. These holes degenerately occupy the light and heavy hole bands of GaN and have record-high mobilities of ~1900 cm2/Vs and ~400 cm2/Vs at 3K, respectively. We use magnetic fields up to 72 T to resolve SdH oscillations of holes from both valence bands to extract their respective sheet densities, quantum scattering times, and the effective masses of light holes (0.5-0.7 m0) and heavy holes (1.9 m0). SdH oscillations of heavy and light holes in GaN constitute a direct metrology of valence bands and open new venues for quantum engineering in this technologically important semiconductor. Like strained silicon transistors, strain-engineering of the valence bands of GaN is predicted to dramatically improve hole mobilities by reducing the hole effective mass, a proposal that can now be explored experimentally, particularly in a fully fabricated transistor, using quantum oscillations. Furthermore, the findings of this work suggest a blueprint to create 2D hole gases and observe quantum oscillations of holes in related wide bandgap semiconductors such as SiC and ZnO in which such techniques are not yet possible.

cond-mat.mes-hall↗

arXiv2024

Identification of large polarons and exciton polarons in rutile and anatase polymorphs of titanium dioxide

Titanium dioxide (TiO2) is a wide-gap semiconductor with numerous applications in photocatalysis, photovoltaics, and neuromorphic computing. The unique functional properties of this material critically depend on its ability to transport charge in the form of polarons, namely narrow electron wavepackets accompanied by local distortions of the crystal lattice. It is currently well established that the most important polymorphs of TiO2, the rutile and anatase phases, harbor small electron polarons and small hole polarons, respectively. However, whether additional polaronic species exist in TiO2, and under which conditions, remain open questions. Here, we provide definitive answers to these questions by exploring the rich landscape of polaron quasiparticles in TiO2 via recently developed ab initio techniques. In addition to the already known small polarons, we identify three novel species, namely a large hole polaron in rutile, a large quasi-two-dimensional electron polaron in anatase, and a large exciton polaron in anatase. These findings complete the puzzle on the polaorn physics of TiO2 and pave the way for systematically probing and manipulating polarons in a broad class of complex oxides and quantum materials.

cond-mat.mtrl-sci↗

arXiv2024

Electron Mobilities in SrTiO$_3$ and KTaO$_3$: Role of Phonon Anharmonicity, Mass Renormalization and Disorder

Accurately predicting carrier mobility in strongly anharmonic solids necessitates a precise characterization of lattice dyndamics as a function of temperature. We achieve consistency with experimental electron mobility data for bulk KTaO$_3$ and SrTiO$_3$ above 150 K by refining the Boltzmann transport equations. This refinement includes incorporating temperature-dependent anharmonic phonon eigenfrequencies and eigenmodes into the electron-phonon interaction tensor, while maintaining the derivatives of the Kohn-Sham potential as computed in density functional perturbation theory. Using efficient machine-learned force fields and the stochastic self-consistent harmonic approximation, we accurately compute the dynamical matrices. At room temperature, the calculated mobility for SrTiO$_3$ exceeds experimental values by an order of magnitude, whereas the overestimation for KTaO$_3$ is way less pronounced. This discrepancy is explained through the more significant electron mass renormalization near the conduction band bottom due to anharmonic electron-phonon coupling and the presence of local disorder in SrTiO$_3$.

cond-mat.mtrl-sci↗

arXiv2024

Intrinsic Limits of Charge Carrier Mobilities in Layered Halide Perovskites

Layered halide perovskites have emerged as potential alternatives to three-dimensional halide perovskites due to their improved stability and larger material phase space, allowing fine-tuning of structural, electronic, and optical properties. However, their charge carrier mobilities are significantly smaller than that of three-dimensional halide perovskites, which has a considerable impact on their application in optoelectronic devices. Here, we employ state-of-the-art ab initio approaches to unveil the electron-phonon mechanisms responsible for the diminished transport properties of layered halide perovskites. Starting from a prototypical ABX$_{3}$ halide perovskite, we model the case of $n=1$ and $n=2$ layered structures and compare their electronic and transport properties to the three-dimensional reference. The electronic and phononic properties are investigated within density functional theory (DFT) and density functional perturbation theory (DFPT), while transport properties are obtained via the ab initio Boltzmann transport equation. The vibrational modes contributing to charge carrier scattering are investigated and associated with polar-phonon scattering mechanisms arising from the long-range Fröhlich coupling and deformation potential scattering processes. Our investigation reveals that the lower mobilities in layered systems primarily originates from the increased electronic density of states at the vicinity of the band edges, while the electron-phonon coupling strength remains similar. Such increase is caused by the dimensionality reduction and the break in octahedra connectivity along the stacking direction. Our findings provide a fundamental understanding of the electron-phonon coupling mechanisms in layered perovskites and highlight the intrinsic limitations of the charge carrier transport in these materials.

cond-mat.mtrl-sci↗

arXiv2024

Topological polarons in halide perovskites

Halide perovskites emerged as a revolutionary family of high-quality semiconductors for solar energy harvesting and energy-efficient lighting. There is mounting evidence that the exceptional optoelectronic properties of these materials could stem from unconventional electron-phonon couplings, and it has been suggested that the formation of polarons and self-trapped excitons could be key to understanding such properties. By performing first-principles simulations with unprecedented detail across the length scales, here we show that halide perovskites harbor a uniquely rich variety of polaronic species, including small polarons, large polarons, and charge density waves, and we explain a variety of experimental observations. We find that these emergent quasiparticles support topologically nontrivial phonon fields with quantized topological charge, making them the first non-magnetic analog of the helical Bloch points found in magnetic skyrmion lattices.

cond-mat.mtrl-sci↗

arXiv2024

Electron mobility of SnO2 from first principles

The transparent conducting oxide SnO2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimental reports of the electron mobility of this material vary widely depending on the growth conditions and doping concentrations. In this work, we calculate the electron mobility of SnO2 from first principles to examine the temperature- and doping-concentration dependence, and to elucidate the scattering mechanisms that limit transport. We include both electron-phonon scattering and electron-ionized impurity scattering to accurately model scattering in a doped semiconductor. We find a strongly anisotropic mobility that favors transport in the direction parallel to the c-axis. At room temperature and intrinsic carrier concentrations, the low-energy polar-optical phonon modes dominate scattering, while ionized-impurity scattering dominates above 10^18 cm^-3.

cond-mat.mtrl-sci↗

arXiv2024

Theory of excitonic polarons: From models to first-principles calculations

Excitons are neutral excitations that are composed of electrons and holes bound together by their attractive Coulomb interaction. The electron and the hole forming the exciton also interact with the underlying atomic lattice, and this interaction can lead to a trapping potential that favors exciton localization. The quasi-particle thus formed by the exciton and the surrounding lattice distortion is called excitonic polaron. Excitonic polarons have long been thought to exist in a variety of materials, and are often invoked to explain the Stokes shift between the optical absorption edge and the photo-luminescence peak. However, quantitative ab initio calculations of these effects are exceedingly rare. In this manuscript, we present a theory of excitonic polarons that is amenable to first-principles calculations. We first apply this theory to model Hamiltonians for Wannier excitons experiencing Fröhlich or Holstein electron-phonon couplings. We find that, in the case of Fröhlich interactions, excitonic polarons only form when there is a significant difference between electron and hole effective masses. Then, we apply this theory to calculating excitonic polarons in lithium fluoride ab initio. The key advantage of the present approach is that it does not require supercells, therefore it can be used to study a variety of materials hosting either small or large excitonic polarons. This work constitutes the first step toward a complete ab initio many-body theory of excitonic polarons in real materials.

cond-mat.mtrl-sci↗

arXiv2024

Excitonic polarons and self-trapped excitons from first-principles exciton-phonon couplings

Excitons consist of electrons and holes held together by their attractive Coulomb interaction. Although excitons are neutral excitations, spatial fluctuations in their charge density couple with the ions of the crystal lattice. This coupling can lower the exciton energy and lead to the formation of a localized excitonic polaron, or even a self-trapped exciton in the presence of strong exciton-phonon interactions. Here, we develop a theoretical and computational approach to compute excitonic polarons and self-trapped excitons from first principles. Our methodology combines the many-body Bethe-Salpeter approach with density-functional perturbation theory, and does not require explicit supercell calculations. As a proof of concept, we demonstrate our method for a compound of the halide perovskite family.

cond-mat.mtrl-sci↗

arXiv2023

Anharmonic electron-phonon coupling in ultrasoft and locally disordered perovskites

Anharmonicity and local disorder (polymorphism) are ubiquitous in perovskite physics, inducing various phenomena observed in scattering and spectroscopy experiments. Several of these phenomena still lack interpretation from first-principles since, hitherto, no approach is available to account for anharmonicity and disorder in electron-phonon couplings. Here, relying on the special displacement method, we develop a unified treatment of both and demonstrate that electron-phonon coupling is strongly influenced when we employ polymorphous perovskite networks. We uncover that polymorphism in halide perovskites leads to vibrational dynamics far from the ideal noninteracting phonon picture and drives the gradual change in their band gap around phase transition temperatures. We also clarify that combined band gap corrections arising from disorder, spin-orbit coupling, exchange-correlation functionals of high accuracy, and electron-phonon coupling are all essential. Our findings agree with experiments, suggesting that polymorphism is the key to address pending questions on perovskites' technological applications.

cond-mat.mtrl-sci↗

arXiv2023

Anharmonic lattice dynamics via the special displacement method

On the basis of the self-consistent phonon theory and the special displacement method, we develop an approach for the treatment of anharmonicity in solids. We show that this approach enables the efficient calculation of temperature-dependent anharmonic phonon dispersions, requiring very few steps to achieve minimization of the system's free energy. We demonstrate this methodology in the regime of strongly anharmonic materials which exhibit a multi-well potential energy surface, like cubic SrTiO$_3$, CsPbBr$_3$, CsPbI$_3$, CsSnI$_3$, and Zr. Our results are in good agreement with experiments and previous first-principles studies relying on stochastic nonperturbative and molecular dynamics simulations. We achieve a very robust workflow by using harmonic phonons of the polymorphous ground state as the starting point and an iterative mixing scheme of the dynamical matrix. We also suggest that the phonons of the polymorphous ground state might provide an excellent starting approximation to explore anharmonicity. Given the simplicity, efficiency, and stability of the present treatment to anharmonicity, it is especially suitable for use with any electronic structure code and for investigating electron-phonon couplings in strongly anharmonic systems.

cond-mat.mtrl-sci↗

arXiv2023

Electron-phonon physics from first principles using the EPW code

EPW is an open-source software for $\textit{ab initio}$ calculations of electron-phonon interactions and related materials properties. The code combines density functional perturbation theory and maximally-localized Wannier functions to efficiently compute electron-phonon coupling matrix elements on ultra-fine Brillouin zone grids. This data is employed for predictive calculations of temperature-dependent properties and phonon-assisted quantum processes in bulk solids and low-dimensional materials. Here, we report on significant new developments in the code that occurred during the period 2016-2022, namely: a transport module for the calculation of charge carrier mobility and conductivity under electric and magnetic fields within the $\textit{ab initio}$ Boltzmann transport equation; a superconductivity module for the calculation of critical temperature and gap structure in phonon-mediated superconductors within the $\textit{ab initio}$ anisotropic multi-band Eliashberg theory; an optics module for calculations of phonon-assisted indirect transitions; a module for the calculation of small and large polarons without supercells using the $\textit{ab initio}$ polaron equations; and a module for calculating electron-phonon couplings, band structure renormalization, and temperature-dependent optical spectra using the special displacement method. For each capability, we outline the methodology and implementation, and provide example calculations. We describe recent code refactoring to prepare EPW for exascale architectures, we discuss efficient parallelization strategies, and report on extreme parallel scaling tests.

cond-mat.mtrl-sci↗