arXiv subjects

Feliciano Giustino

Publications and source records attributed to Feliciano Giustino.

At least 55 records · Page 3Linked to original sources

arXiv2023

Polarons in two-dimensional atomic crystals

The polaron is the archetypal example of a quasiparticle emerging from the interaction between fermionic and bosonic fields in quantum field theory. In crystalline solids, polarons are formed when electrons and holes become dressed by the quanta of lattice vibrations. While experimental signatures of polarons in bulk three-dimensional materials abound, only rarely have polarons been observed in two-dimensional atomic crystals. Here, we shed light on this asymmetry by developing a quantitative ab initio theory of polarons in atomically-thin crystals. Using this conceptual framework, we unravel the real-space structure of the recently-observed hole polaron in hexagonal boron nitride, we discover an unexpected critical condition for the existence of polarons in two-dimensional crystals, and we establish the key materials descriptors and the universal laws that underpin polaron physics in two dimensions.

cond-mat.mtrl-sci↗

arXiv2023

Ab initio calculation of carrier mobility in semiconductors including ionized-impurity scattering

The past decade has seen the emergence of ab initio computational methods for calculating phonon-limited carrier mobilities in semiconductors with predictive accuracy. More realistic calculations ought to take into account additional scattering mechanisms such as, for example, impurity and grain-boundary scattering. In this work, we investigate the effect of ionized-impurity scattering on the carrier mobility. We model the impurity potential by a collection of randomly distributed Coulomb scattering centers, and we include this relaxation channel into the ab initio Boltzmann transport equation, as implemented in the EPW code. We demonstrate this methodology by considering silicon, silicon carbide, and gallium phosphide, for which detailed experimental data are available. Our calculations agree reasonably well with experiments over a broad range of temperatures and impurity concentrations. For each compound investigated here, we compare the relative importance of electron-phonon scattering and ionized-impurity scattering, and we critically assess the reliability of Matthiessen's rule. We also show that an accurate description of dielectric screening and carrier effective masses cam improve quantitative agreement with experiments.

cond-mat.mtrl-sci↗

arXiv2022

Ab initio theory of free-carrier absorption in semiconductors

The absorption of light by free carriers in semiconductors results in optical loss for all photon wavelengths. Since free-carrier absorption competes with optical transitions across the band gap, it also reduces the efficiency of optoelectronic devices such as solar cells because it does not generate electron-hole pairs. In this work, we develop a first-principles theory of free-carrier absorption taking into account both single-particle excitations and the collective Drude term, and we demonstrate its application to the case of doped Si. We determine the free-carrier absorption coefficient as a function of carrier concentration and we obtain excellent agreement with experimental data. We identify the dominant processes that contribute to free-carrier absorption at various photon wavelengths, and analyze the results to evaluate the impact of this loss mechanism on the efficiency of Si-based optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2022

Ab initio self-consistent many-body theory of polarons at all couplings

We present a theoretical framework to describe polarons from first principles within a many-body Green's function formalism. Starting from a general electron-phonon Hamiltonian, we derive a self-consistent Dyson equation in which the phonon-mediated self-energy is composed by two distinct terms. One term is the Fan-Migdal self-energy and describes dynamic electron-phonon processes, the other term is a new contribution to the self-energy originating from the static displacements of the atomic nuclei in the polaronic ground state. The lowest-order approximation to the present theory yields the standard many-body perturbation theory approach to electron-phonon interactions in the limit of large polarons, and the ab initio polaron equations introduced in [Sio et al., Phys. Rev. B 99, 235139 (2019); Phys. Rev. Lett. 122, 246403 (2019)] in the limit of small polarons. A practical recipe to implement the present unifying formalism in first-principles calculations is outlined. We apply our method to the Fröhlich model, and obtain remarkably accurate polaron energies at all couplings, in line with Feynman's polaron theory and diagrammatic Monte Carlo calculations. We also recover the well-known results of Fröhlich and Pekar at weak and strong coupling, respectively. The present approach enables predictive many-body calculations of polarons in real materials at all couplings.

cond-mat.mtrl-sci↗

arXiv2022

Unified approach to polarons and phonon-induced band structure renormalization

Ab initio calculations of the phonon-induced band structure renormalization are currently based on the perturbative Allen-Heine theory and its many-body generalizations. These approaches are unsuitable to describe materials where electrons form localized polarons. Here, we develop a self-consistent, many-body Green's function theory of band structure renormalization that incorporates localization and self-trapping. We show that the present approach reduces to the Allen-Heine theory in the weak-coupling limit, and to total energy calculations of self-trapped polarons in the strong-coupling limit. To demonstrate this methodology, we reproduce the path-integral results of Feynman and diagrammatic Monte Carlo calculations for the Fröhlich model at all couplings, and we calculate the zero point renormalization of the band gap of an ionic insulator including polaronic effects.

cond-mat.mtrl-sci↗

arXiv2022

Anisotropic-strain-enhanced hole mobility in GaN by lattice matching to ZnGeN$_2$ and MgSiN$_2$

The key obstacle toward realizing integrated gallium nitride (GaN) electronics is its low hole mobility. Here, we explore the possibility of improving the hole mobility of GaN via epitaxial matching to II-IV nitride materials that have recently become available, namely ZnGeN$_2$ and MgSiN$_2$. We perform state-of-the-art calculations of the hole mobility of GaN using the ab initio Boltzmann transport equation. We show that effective uniaxial compressive strain of GaN along the $[1\bar{1}00]$ by lattice matching to ZnGeN$_2$ and MgSiN$_2$ results in the inversion of the heavy hole band and split-off hole band, thereby lowering the effective hole mass in the compression direction. We find that lattice matching to ZnGeN$_2$ and MgSiN$_2$ induces an increase of the room-temperature hole mobility by 50% and 260% as compared to unstrained GaN, respectively. Examining the trends as a function of strain, we find that the variation in mobility is highly nonlinear; lattice matching to a hypothetical solid solution of Zn$_{0.75}$Ge$_{0.75}$Mg$_{0.25}$Si$_{0.25}$N$_2$ would already increase the hole mobility by 160%.

cond-mat.mtrl-sci↗

arXiv2022

Unified ab initio description of Fröhlich electron-phonon interactions in two-dimensional and three-dimensional materials

\textit{Ab initio} calculations of electron-phonon interactions including the polar Fröhlich coupling have advanced considerably in recent years. The Fröhlich electron-phonon matrix element is by now well understood in the case of bulk three-dimensional (3D) materials. In the case of two-dimensional (2D) materials, the standard procedure to include Fröhlich coupling is to employ Coulomb truncation, so as to eliminate artificial interactions between periodic images of the 2D layer. While these techniques are well established, the transition of the Fröhlich coupling from three to two dimensions has not been investigated. Furthermore, it remains unclear what error one makes when describing 2D systems using the standard bulk formalism in a periodic supercell geometry. Here, we generalize previous work on the \textit{ab initio} Fröhlich electron-phonon matrix element in bulk materials by investigating the electrostatic potential of atomic dipoles in a periodic supercell consisting of a 2D material and a continuum dielectric slab. We obtain a unified expression for the matrix element, which reduces to the existing formulas for 3D and 2D systems when the interlayer separation tends to zero or infinity, respectively. This new expression enables an accurate description of the Fröhlich matrix element in 2D systems without resorting to Coulomb truncation. We validate our approach by direct \textit{ab initio} density-functional perturbation theory calculations for monolayer BN and MoS$_2$, and we provide a simple expression for the 2D Fröhlich matrix element that can be used in model Hamiltonian approaches. The formalism outlined in this work may find applications in calculations of polarons, quasiparticle renormalization, transport coefficients, and superconductivity, in 2D and quasi-2D materials.

cond-mat.mtrl-sci↗

arXiv2022

Many-body Green's function approaches to the doped Fröhlich solid: Exact solutions and anomalous mass enhancement

In polar semiconductors and insulators, the Fröhlich interaction between electrons and long-wavelength longitudinal optical phonons induces a many-body renormalization of the carrier effective masses and the appearence of characteristic phonon sidebands in the spectral function, commonly dubbed 'polaron satellites'. The simplest model that captures these effects is the Fröhlich model, whereby electrons in a parabolic band interact with a dispersionless longitudinal optical phonon. The Fröhlich model has been employed in a number of seminal papers, from early perturbation-theory approaches to modern diagrammatic Monte Carlo calculations. One limitation of this model is that it focuses on undoped systems, thus ignoring carrier screening and Pauli blocking effects that are present in real experiments on doped samples. To overcome this limitation, we here extend the Fröhlich model to the case of doped systems, and we provide exact solutions for the electron spectral function, mass enhancement, and polaron satellites. We perform the analysis using two approaches, namely Dyson's equation with the Fan-Migdal self-energy, and the second-order cumulant expansion. We find that these two approaches provide qualitatively different results. In particular, the Dyson's approach yields better quasiparticle masses and worse satellites, while the cumulant approach provides better satellite structures, at the price of worse quasiparticle masses. Both approaches yield an anomalous enhancement of the electron effective mass at finite doping levels, which in turn leads to a breakdown of the quasiparticle picture in a significant portion of the phase diagram.

cond-mat.mtrl-sci↗

arXiv2021

Dynamic Rashba-Dresselhaus Effect

The Rashba-Dresselhaus effect is the splitting of doubly degenerate band extrema in semiconductors, accompanied by the emergence of counter-rotating spin textures and spin-momentum locking. Here we investigate how this effect is modified by lattice vibrations. We show that, in centrosymmetric non-magnetic crystals, for which a bulk Rashba-Dresselhaus effect is symmetry-forbidden, electron-phonon interactions can induce a phonon-assisted, dynamic Rashba-Dresselhaus spin splitting in the presence of an out-of-equilibrium phonon population. In particular, we show how Rashba, Dresselhaus, or Weyl spin textures can selectively be established by driving coherent infrared-active phonons, and we perform ab initio calculations to quantify this effect for halide perovskites.

cond-mat.mtrl-sci↗

arXiv2021

Theory and computation of Hall scattering factor in graphene

The Hall scattering factor, $r$, is a key quantity for establishing carrier concentration and drift mobility from Hall measurements; in experiments it is usually assumed to be 1. In this paper we use a combination of analytical and \textit{ab initio} modelling to determine $r$ in graphene. While at high carrier densities $r \approx 1$ in a wide temperature range, at low doping the temperature dependence of $r$ is very strong with values as high as 4 below 300~K. These high values are due to the linear bands around the Dirac cone and the carrier scattering rates due to acoustic phonons. At higher temperatures $r$ can instead become as low as $0.5$ due to the contribution of both holes and electrons and the role of optical phonons. Finally, we provide a simple analytical model to compute accurately $r$ in graphene in a wide range of temperatures and carrier densities.

cond-mat.mes-hall↗

arXiv2021

Multi-phonon diffuse scattering in solids from first-principles: Application to layered crystals and 2D materials

Time-resolved diffuse scattering experiments have gained increasing attention due to their potential to reveal non-equilibrium dynamics of crystal lattice vibrations with full momentum resolution. Although progress has been made in interpreting experimental data on the basis of one-phonon scattering, understanding the role of individual phonons can be sometimes hindered by multi-phonon excitations. In Ref. [{\it arXiv:2103.10108}] we have introduced a rigorous approach for the calculation of the all-phonon inelastic scattering intensity of solids from first-principles. In the present work, we describe our implementation in detail and show that multi-phonon interactions are captured efficiently by exploiting translational and time-reversal symmetries of the crystal. We demonstrate its predictive power by calculating the scattering patterns of monolayer molybdenum disulfide (MoS$_2$), bulk MoS$_2$, and black phosphorus (bP), and we obtain excellent agreement with our measurements of thermal electron diffuse scattering. Remarkably, our results show that multi-phonon excitations dominate in bP across multiple Brillouin zones, while in MoS$_2$ they play a less pronounced role. We expand our analysis for each system and examine the effect of individual atomic and interatomic vibrational motion on the diffuse scattering signals. We further demonstrate the high-throughput capability of our approach by reporting all-phonon scattering maps of 2D MoSe2, WSe2, WS2, graphene, and CdI2, rationalizing in each case the effect of multi-phonon processes. As a side point, we show that the special displacement method reproduces the thermally distorted configuration that generates precisely the all-phonon diffuse pattern.

cond-mat.mtrl-sci↗

arXiv2021

Efficient first-principles methodology for the calculation of the all-phonon inelastic scattering in solids

Inelastic scattering experiments are key methods for mapping the full dispersion of fundamental excitations of solids in the ground as well as non-equilibrium states. A quantitative analysis of inelastic scattering in terms of phonon excitations requires identifying the role of multi-phonon processes. Here, we develop an efficient first-principles methodology for calculating the all-phonon quantum mechanical structure factor of solids. We demonstrate our method by obtaining excellent agreement between measurements and calculations of the diffuse scattering patterns of black phosphorus, showing that multi-phonon processes play a substantial role. The present approach constitutes a step towards the interpretation of static and time-resolved electron, X-ray, and neutron inelastic scattering data.

cond-mat.mtrl-sci↗

arXiv2021

Limits to Electrical Mobility in Lead-Halide Perovskite Semiconductors

Semiconducting polycrystalline thin films are cheap to produce and can be deposited on flexible substrates, yet high-performance electronic devices usually utilize single-crystal semiconductors, owing to their superior electrical mobilities and longer diffusion lengths. Here we show that the electrical performance of polycrystalline films of metal-halide perovskites (MHPs) approaches that of single crystals at room temperature. Combining temperature-dependent terahertz conductivity measurements and ab initio calculations we uncover a complete picture of the origins of charge scattering in single crystals and polycrystalline films of CH$_3$NH$_3$PbI$_3$. We show that Fröhlich scattering of charge carriers with multiple phonon modes is the dominant mechanism limiting mobility, with grain-boundary scattering further reducing mobility in polycrystalline films. We reconcile the large discrepancy in charge diffusion lengths between single crystals and films by considering photon reabsorption. Thus, polycrystalline films of MHPs offer great promise for devices beyond solar cells, including transistors and modulators.

physics.app-ph↗

arXiv2021

Superconducting properties of MoTe$_2$ from the $ab~initio$ anisotropic Migdal-Eliashberg theory

Molybdenum ditelluride (MoTe$_2$) is attracting considerable interest since it is the archetypal type-II Weyl semimetal and a candidate for topological superconductivity. We investigate the superconducting phase diagram of two MoTe$_2$ polymorphs using the $ab~initio$ anisotropic Migdal-Eliashberg theory, and we show that the superconducting dome originates from the synergistic contribution of the density of states at the Fermi level and the transverse acoustic Te modes in the 1T$^\prime$ phase. We find that the electron and hole pockets carry trivial $s$-wave order parameters of slightly different magnitude, reminiscent of a two-gap structure as suggested by recent experiments. We suggest that a possible route for enhancing the superconducting critical temperature, and realizing $s_{+-}$ pairing, in the T$_d$ phase is to exploit its non-trivial band topology via electron doping.

cond-mat.supr-con↗

arXiv2021

First-principles study of electron transport in ScN

We investigate the conduction-band structure and electron mobility in rocksalt ScN based on density functional theory. The first-principles band structure allows us to obtain band velocities and effective masses as a function of energy. Electron-phonon scattering is assessed by explicitly computing the $q$-dependent electron-phonon matrix elements, with the inclusion of the long-range electrostatic interaction. The influence of free-carrier screening on the electron transport is assessed using the random phase approximation. We find a notable enhancement of electron mobility when the carrier concentration exceeds 10$^{20}$ cm$^{-3}$. We calculate the room-temperature electron mobility in ScN to be 587 cm$^2$/Vs at low carrier concentrations. When the carrier concentration is increased, the electron mobility starts to decrease significantly around $n=10^{19}$ cm$^{-3}$, and drops to 240 cm$^2$/Vs at $n=10^{21}$ cm$^{-3}$. We also explore the influence of strain in (111)- and (100)-oriented ScN films. For (111) films, we find that a 1.0\% compressive epitaxial strain increases the in-plane mobility by 72 cm$^2$/Vs and the out-of-plane mobility by 50 cm$^2$/Vs. For (100) films, a 1.0\% compressive epitaxial strain increases the out-of-plane mobility by as much as 172 cm$^2$/Vs, but has a weak impact on the in-plane mobility. Our study sheds light on electron transport in ScN at different electron concentrations and shows how strain engineering could increase the electron mobility.

cond-mat.mtrl-sci↗

arXiv2021

First-principles predictions of Hall and drift mobilities in semiconductors

Significant progress on parameter-free calculations of carrier mobilities in real materials has been made during the past decade; however, the role of various approximations remains unclear and a unified methodology is lacking. Here, we present and analyse a comprehensive and efficient approach to compute the intrinsic, phonon-limited drift and Hall carrier mobilities of semiconductors, within the framework of the first-principles Boltzmann transport equation. The methodology exploits a novel approach for estimating quadrupole tensors and including them in the electron-phonon interactions, and capitalises on a rigorous and efficient procedure for numerical convergence. The accuracy reached in this work allows to assess common approximations, including the role of exchange and correlation functionals, spin-orbit coupling, pseudopotentials, Wannier interpolation, Brillouin-zone sampling, dipole and quadrupole corrections, and the relaxation-time approximation. A detailed analysis is showcased on ten prototypical semiconductors, namely diamond, silicon, GaAs, 3C-SiC, AlP, GaP, c-BN, AlAs, AlSb, and SrO. By comparing this extensive dataset with available experimental data, we explore the intrinsic nature of phonon-limited carrier transport and magnetotransport phenomena in these compounds. We find that the most accurate calculations predict Hall mobilities up to a factor of two larger than experimental data; this could point to promising experimental improvements in the samples quality, or to the limitations of density-function theory in predicting the carrier effective masses and overscreening the electron-phonon matrix elements. By setting tight standards for reliability and reproducibility, the present work aims to facilitate validation and verification of data and software towards predictive calculations of transport phenomena in semiconductors.

cond-mat.mtrl-sci↗

arXiv2021

Monolayer 1T-NbSe2 as a 2D correlated magnetic insulator

Monolayer group-V transition metal dichalcogenides in their 1T phase have recently emerged as a platform to investigate rich phases of matter, such as spin liquid and ferromagnetism, resulting from strong electron correlations. Although 1T phase NbSe2 does not occur naturally in bulk form, it has been discovered that the 1T and 1H phases can coexist when monolayer NbSe2 is grown via molecular beam epitaxy (MBE). This discovery has inspired theoretical investigations predicting collective phenomena such as ferromagnetism in two dimensions. Here, by controlling the MBE growth parameters, we demonstrate the successful growth of single-phase 1T-NbSe2. By combining scanning tunneling microscopy/spectroscopy and ab initio calculations, we show that this system is a charge-transfer insulator, with the upper Hubbard band located above the valence band maximum. Furthermore, by creating a vertical 1T/2H NbSe2 heterostructure, we find evidence of exchange interactions between the localized magnetic moments in 1T phase and the metallic/superconducting phase, as manifested by Kondo resonances and Yu-Shiba-Rusinov bound states.

cond-mat.str-el↗

arXiv2021

GW band structure of monolayer MoS2 using the SternheimerGW method and effect of dielectric environment

Monolayers of transition-metal dichalcogenides (TMDs) hold great promise as future nanoelectronic and optoelectronic devices. An essential feature for achieving high device performance is the use of suitable supporting substrates, which can affect the electronic and optical properties of these two-dimensional (2D) materials. Here, we perform many-body GW calculations using the SternheimerGW method to investigate the quasiparticle band structure of monolayer MoS2 subject to an effective dielectric screening model, which is meant to approximately describe substrate polarization in real device applications. We show that, within this model, the dielectric screening has a sizable effect on the quasiparticle band gap; for example, the gap renormalization is as large as 250 meV for MoS2 with model screening corresponding to SiO2. Within the G0W0 approximation, we also find that the inclusion of the effective screening induces a direct band gap, in contrast to the unscreened monolayer. We also find that the dielectric screening induces an enhancement of the carrier effective masses by as much as 27% for holes, shifts plasmon satellites, and redistributes quasiparticle weight. Our results highlight the importance of the dielectric environment in the design of 2D TMD-based devices.

cond-mat.mtrl-sci↗