arXiv subjects

Felix Lüpke

Publications and source records attributed to Felix Lüpke.

At least 19 recordsLinked to original sources

arXiv2026

Highly crystalline superconducting TiN resonators grown on thermally reconstructed sapphire

High quality crystalline growth of a thin film on sapphire requires sufficient substrate preparation, often achieved via the use of aggressive chemical cleaning. Direct thermal reconstruction of the sapphire substrate via a CO$_2$ laser beam may allow for an alternative way to prepare the substrate for epitaxy without the use of any chemical processing. Within this work, we demonstrate that thermal annealing of sapphire into its ($\sqrt{31}$$\times$$\sqrt{31}$)$R$$\pm$9° reconstruction is a valid alternative preparation technique for sapphire substrates. TiN films grown via plasma-assisted molecular beam epitaxy upon these substrates exhibit greater crystallinity than those grown on chemically cleaned sapphire substrates. Superconducting resonators fabricated from these films exhibit similar performance, with many possessing internal quality factors at single photon levels greater than 10$^6$ for both substrate preparation methods.

cond-mat.supr-con↗

arXiv2026

Contactless terahertz mapping of wafer-scale superconducting NbTiN thin films

For large-scale superconducting quantum technology, e.g. quantum computing, the homogeneity of wafer-scale superconducting thin films is vital for consistent performance of the fabricated devices. Terahertz (THz) spectroscopy as a contactless and non-destructive measurement technique is a powerful tool to characterize the superconducting films. In this work, a set of niobium titanium nitride (NbTiN) thin films on 4-inch and 6-inch silicon wafers, grown via plasma-enhanced magnetron sputtering, are investigated via THz spectroscopy: full wafers are mapped at room temperatures and exemplary segments are characterized at cryogenic temperatures. The deviations in observed sheet resistance depend on the used deposition device and the film thickness. While the deviations in superconducting sheet kinetic inductance match those of the normal-state sheet resistance, the critical temperature and energy gap exhibit little variation. This THz mapping technique demonstrates the feasibility of evaluating wafer-scale superconducting thin films before lithography, facilitating preparation of the thin films for reproducible device fabrication.

cond-mat.supr-con↗

arXiv2026

Defect-induced displacement of topological surface state in quantum magnet MnBi$_2$Te$_4$

The topological magnet MnBi$_2$Te$_4$ (MBT), with gapped topological surface state, is an attractive platform for realizing quantum anomalous Hall and Axion insulator states. However, the experimentally observed surface state gaps fail to meet theoretical predictions, although the exact mechanism behind the gap suppression has been debated. Recent theoretical studies suggest that intrinsic antisite defects push the topological surface state away from the MBT surface, closing its gap and making it less accessible to scanning probe experiments. Here, we report on the local effect of defects on the MBT surface states and demonstrate that high defect concentrations lead to a displacement of the surface states well into the MBT crystal, validating the theorized mechanism. The local and global influence of antisite defects on the topological surface states are studied with samples of varying defect densities by combining scanning tunneling microscopy (STM), angle-resolved photoemission (ARPES), and density functional theory (DFT). Our findings identify a combination of increased defect density and reduced defect spacing as the primary factors underlying the displacement of the surface states and suppression of surface gap, guiding further development of topological quantum materials.

cond-mat.mes-hall↗

arXiv2026

Imaging the transition from diffusive to Landauer resistivity dipoles

A point-like defect in a uniform current-carrying conductor induces a dipole in the electrochemical potential, which counteracts the original transport field. If the mean free path of the carriers is much smaller than the size of the defect, the dipole results from the purely diffusive motion of the carriers around the defect. In the opposite limit, ballistic carriers scatter from the defect -- for this situation, Rolf Landauer postulated the emergence of residual resistivity dipoles that are independent of the defect size and thus impose a fundamental limit on the resistance of the parent conductor. Here, we study resistivity dipoles around holes of different sizes in two-dimensional Bi films on Si(111). Using scanning tunneling potentiometry to image the dipoles, we find a crossover from linear to constant scaling behavior of their amplitudes with defect size, manifesting the transition from diffusive to Landauer dipoles. The extracted parameters of the transition allow us to estimate the Fermi wave vector and the carrier mean free path in our Bi films.

cond-mat.mes-hall↗

arXiv2026

Tailoring spontaneous symmetry breaking in engineered van der Waals superlattices

Superlattice engineering in van der Waals heterostructures (e.\,g.\ by moiré engineering) provides a powerful platform for designing electronic bands and realising correlated and topological quantum phenomena. Here, we pioneer a scheme to tailor superpotentials based on intrinsic substrate electronic orders. We show that this establishes a robust, self-aligned, and highly versatile route to band-structure control as we demonstrate in graphene by engineering two distinct, nearly commensurate superlattices using the charge density waves of 1T-NbSe$_2$. In these superlattices the graphene's Dirac cones are folded either to the $Γ$-point or to the K-points of the mini-Brillouin zone. Using scanning tunnelling microscopy, we observe that the $Γ$-folded system preserves C$_3$ symmetry, while the K-folded system exhibits spontaneous symmetry breaking. Combining density functional theory with an interlayer interaction model, we reveal that this difference is not electronically driven but originates from a structural instability. Our work establishes superlattice engineering for designer quantum states and unveils a structural mechanism for controlled emergent symmetry breaking.

cond-mat.mes-hall↗

arXiv2025

Giant orbital Zeeman effects in a magnetic topological van der Waals interphase

Van der Waals (vdW) heterostructures allow the engineering of electronic and magnetic properties by the stacking different two-dimensional vdW materials. For example, orbital hybridisation and charge transfer at a vdW interface may result in electric fields across the interface that give rise to Rashba spin-orbit coupling. In magnetic vdW heterostructures, this in turn can drive the Dzyaloshinskii-Moriya interaction which leads to a canting of local magnetic moments at the vdW interface and may thus stabilise novel 2D magnetic phases. While such emergent magnetic "interphases" offer a promising platform for spin-based electronics, direct spectroscopic evidence for them is still lacking. Here, we report Zeeman effects with Landé $g$-factors up to $\approx230$ at the interface of graphene and the vdW ferromagnet Fe$_3$GeTe$_2$. They arise from a magnetic interphase in which local-moment canting and itinerant orbital moments generated by the non-trivial band topology of Fe$_3$GeTe$_2$ conspire to cause a giant asymmetric level splitting when a magnetic field is applied. Exploiting the inelastic phonon gap of graphene, we can directly access the buried vdW interface to the Fe$_3$GeTe$_2$ by scanning tunnelling spectroscopy. Systematically analyzing the Faraday-like screening of the tip electric field by the graphene, we demonstrate the tunability of the constitutional interface dipole, as well as the Zeeman effect, by tip gating. Our findings are supported by density functional theory and electrostatic modelling.

cond-mat.mes-hall↗

arXiv2025

Distributed Current Injection into a One-Dimensional Ballistic Edge Channel

We generalize Landauer's theory of ballistic transport in a one-dimensional (1D) conductor to situations where charge carrier injection and extraction are not any more confined to electrodes at either end of the channel, but may occur along its whole length. This type of distributed injection is expected to occur from the two-dimensional (2D) bulk of, e.g., a quantum spin (or anomalous) Hall insulator to its topologically protected edge states. We apply our conceptual solution to the case of two metal electrodes contacting the 2D bulk, enabling us to derive criteria that discriminate ballistic from resistive edge channels in multi-terminal transport experiments.

cond-mat.mes-hall↗

arXiv2025

Multi-Orbital Charge Transfer into Nonplanar Cycloarenes Revealed with CO-Functionalized Tips

On-surface synthesis has allowed for the tuneable preparation of numerous molecular systems with variable properties. Recently, we demonstrated the highly selective synthesis of kekulene (>99%) on Cu(111) and isokekulene (92%) on Cu(110) from the same molecular precursor (Ruan et al., Angew. Chem. Int. Ed. 2025, e202509932). Scanning tunneling microscopy with CO-functionalized tips can identify the single molecules on the basis of their geometric structure at a low coverage on Cu(110), but it also detects complex features due to electronic contributions close to the Fermi energy. Here, we investigate the origin of these features by simulating STM images based on a weighted sum of multiple molecular orbitals, for which we employ weights based on the calculated molecular-orbital projected density of states. This allows for an experimental confirmation of charge transfer from the surface into multiple formerly unoccupied molecular orbitals for single molecules of kekulene as well as isokekulene in its two nonplanar adsorption configurations. In comparison, the area-integrating photoemission orbital tomography technique confirms the charge transfer as well as the high selectivity for the formation of a full monolayer of mainly isokekulene on Cu(110). Our STM-based approach is applicable to a wide range of adsorbed molecular systems and specifically also suited for strongly interacting surfaces, nonplanar molecules, and such molecules which can only be prepared at extremely low yields.

physics.chem-ph↗

arXiv2024

Shear-resistant topology in quasi one-dimensional van der Waals material Bi$_4$Br$_4$

Bi$_4$Br$_4$ is a prototypical quasi one-dimensional (1D) material in which covalently bonded bismuth bromide chains are arranged in parallel, side-by-side and layer-by-layer, with van der Waals (vdW) gaps in between. So far, two different structures have been reported for this compound, $α$-Bi$_4$Br$_4$ and $β$-Bi$_4$Br$_4$ , in both of which neighboring chains are shifted by $\mathbf{b}/2$, i.e., half a unit cell vector in the plane, but which differ in their vertical stacking. While the different layer arrangements are known to result in distinct electronic properties, the effect of possible in-plane shifts between the atomic chains remains an open question. Here, using scanning tunneling microscopy and spectroscopy (STM/STS), we report a new Bi$_4$Br$_4$(001) structure, with a shift of $\mathbf{b}/3$ between neighboring chains in the plane and AB layer stacking. We determine shear strain to be the origin of this new structure, which can readily result in shifts of neighboring atomic chains because of the weak inter-chain bonding. For the observed $b/3$ structure, the (residual) atomic chain shift corresponds to an in-plane shear strain of $γ\approx7.5\%$. STS reveals a bulk insulating gap and metallic edge states at surface steps, indicating that the new structure is also a higher-order topological insulator, just like $α$-Bi$_4$Br$_4$, in agreement with density functional theory (DFT) calculations.

cond-mat.mes-hall↗

arXiv2024

Scattering makes a difference in circular dichroic angle-resolved photoemission

Recent years have witnessed a steady progress towards blending 2D quantum materials into technology, with future applications often rooted in the electronic structure. Since crossings and inversions of electronic bands with different orbital characters determine intrinsic quantum transport properties, knowledge of the orbital character is essential. Here, we benchmark angle-resolved photoelectron emission spectroscopy (ARPES) as a tool to experimentally derive orbital characters. For this purpose we study the valence electronic structure of two technologically relevant quantum materials, graphene and WSe$_2$, and focus on circular dichroism that is believed to provide sensitivity to the orbital angular momentum. We analyze the contributions related to angular atomic photoionization profiles, interatomic interference, and multiple scattering. Regimes in which initial-state properties could be disentangled from the ARPES maps are critically discussed and the potential of using circular-dichroic ARPES as a tool to investigate the spin polarization of initial bands is explored. For the purpose of generalization, results from two additional materials, GdMn$_6$Sn$_6$ and PtTe$_2$ are presented in addition. This research demonstrates rich complexity of the underlying physics of circular-dichroic ARPES, providing new insights that will shape the interpretation of both past and future circular-dichroic ARPES studies.

cond-mat.mtrl-sci↗

arXiv2023

Anti-site defect-induced disorder in compensated topological magnet MnBi$_{2-x}$Sb$_x$Te$_4$

The gapped Dirac-like surface states of compensated magnetic topological insulator MnBi$_{2-x}$Sb$_x$Te$_4$ (MBST) are a promising host for exotic quantum phenomena such as the quantum anomalous Hall effect and axion insulating states. However, it has become clear that atomic defects undermine the stabilization of such quantum phases as they lead to spatial variations in the surface state gap and doping levels. The large number of possible defect configurations in MBST make studying the influence of individual defects virtually impossible. Here, we present a statistical analysis of the nanoscale effect of defects in MBST with $x=0.64$, by scanning tunneling microscopy/spectroscopy (STM/S). We identify (Bi,Sb)$_{\rm Mn}$ anti-site defects to be the main source of the observed doping fluctuations, leading towards the formation of nanoscale charge puddles and effectively closing the transport gap. Our findings will guide further optimization of this material system via defect engineering, to enable exploitation of its promising properties.

cond-mat.mes-hall↗

arXiv2023

Suspended dry pick-up and flip-over assembly for van der Waals heterostructures with ultra-clean surfaces

Van der Waals heterostructures are an excellent platform for studying intriguing interface phenomena, such as moiré and proximity effects. Surface science techniques like scanning tunneling microscopy (STM) have proven a powerful tool to study such heterostructures but have so far been hampered because of their high sensitivity to surface contamination. Here, we report a dry polymer-based assembly technique to fabricate van der Waals heterostructures with atomically clean surfaces. The key features of our suspended dry pick-up and flip-over technique are 1) the heterostructure surface never comes into contact with polymers, 2) it is entirely solvent-free, 3) it is entirely performed in a glovebox, and 4) it only requires temperatures below 130$^{\circ}$. By performing ambient atomic force microscopy and atomically-resolved scanning tunneling microscopy on example heterostructures, we demonstrate that we can fabricate air-sensitive heterostructures with ultra-clean interfaces and surfaces. Due to the lack of polymer melting, the technique is further compatible with heterostructure assembly under ultra-high vacuum conditions, which promises ultimate heterostructure quality.

cond-mat.mes-hall↗

arXiv2023

One-dimensional topological superconductivity in a van der Waals heterostructure

One-dimensional (1D) topological superconductivity is a state of matter that is not found in nature. However, it can be realised, for example, by inducing superconductivity into the quantum spin Hall edge state of a two-dimensional topological insulator. Because topological superconductors are proposed to host Majorana zero modes, they have been suggested as a platform for topological quantum computing. Yet, conclusive proof of 1D topological superconductivity has remained elusive. Here, we employ low-temperature scanning tunnelling microscopy to show 1D topological superconductivity in a van der Waals heterostructure by directly probing its superconducting properties, instead of relying on the observation of Majorana zero modes at its boundary. We realise this by placing the two-dimensional topological insulator monolayer WTe$_2$ on the superconductor NbSe$_2$. We find that the superconducting topological edge state is robust against magnetic fields, a hallmark of its triplet pairing. Its topological protection is underpinned by a lateral self-proximity effect, which is resilient against disorder in the monolayer edge. By creating this exotic state in a van der Waals heterostructure, we provide an adaptable platform for the future realization of Majorana bound states. Finally, our results more generally demonstrate the power of Abrikosov vortices as effective experimental probes for superconductivity in nanostructures.

cond-mat.mes-hall↗

arXiv2022

Probing edge state conductance in ultra-thin topological insulator films

Quantum spin Hall (QSH) insulators have unique electronic properties, comprising a band gap in their two-dimensional interior and one-dimensional spin-polarized edge states in which current flows ballistically. In scanning tunneling microscopy (STM), the edge states manifest themselves as a localized density of states. However, there is a significant research gap between the observation of edge states in nanoscale spectroscopy, and the detection of ballistic transport in edge channels which typically relies on transport experiments with microscale lithographic contacts. Here, we study few-layer films of the three-dimensional topological insulator (Bi$_{x}$Sb$_{1-x})_2$Te$_3$, for which a topological transition to a two-dimensional topological QSH insulator phase has been proposed. Indeed, an edge state in the local density of states is observed within the band gap. Yet, in nanoscale transport experiments with a four-tip STM, 2 and 3 quintuple layer films do not exhibit a ballistic conductance in the edge channels. This demonstrates that the detection of edge states in spectroscopy can be misleading with regard to the identification of a QSH phase. In contrast, nanoscale multi-tip transport experiments are a robust method for effectively pinpointing ballistic edge channels, as opposed to trivial edge states, in quantum materials.

cond-mat.mes-hall↗

arXiv2021

Quantum spin Hall edge states and interlayer coupling in twisted-bilayer WTe$_2$

The quantum spin Hall (QSH) effect, characterized by topologically protected spin-polarized edge states, was recently demonstrated in monolayers of the transition metal dichalcogenide (TMD) WTe$_2$. However, the robustness of this topological protection remains largely unexplored in van der Waals heterostructures containing one or more layers of a QSH insulator. In this work, we use scanning tunneling microscopy and spectroscopy (STM/STS) to explore the topological nature of twisted bilayer (tBL) WTe$_2$ which is produce from folded monolayers, as well as, tear-and-stack fabrication. At the tBL bilayer edge, we observe the characteristic spectroscopic signature of the QSH edge state that is absent in topologically trivial as-grown bilayer. For small twist angles, a rectangular moiré pattern develops, which results in local modifications of the band structure. Using first principles calculations, we quantify the interactions in tBL WTe$_2$ and its topological edge states as function of interlayer distance and conclude that it is possible to tune the topology of WTe$_2$ bilayers via the twist angle as well as interlayer interactions.

cond-mat.mes-hall↗

arXiv2021

Lifting the spin-momentum locking in ultra-thin topological insulator films

Three-dimensional (3D) topological insulators (TIs) are known to carry 2D Dirac-like topological surface states in which spin-momentum locking prohibits backscattering. When thinned down to a few nanometers, the hybridization between the topological surface states at the top and bottom surfaces results in a topological quantum phase transition, which can lead to the emergence of a quantum spin Hall phase. Here, we study the thickness-dependent transport properties across the quantum phase transition on the example of (Bi$_{0.16}$Sb$_{0.84}$)$_2$Te$_3$ films, with a four-tip scanning tunnelling microscope. Our findings reveal an exponential drop of the conductivity below the critical thickness. The steepness of this drop indicates the presence of spin-conserving backscattering between the top and bottom surface states, effectively lifting the spin-momentum locking and resulting in the opening of a gap at the Dirac point. Our experiments provide crucial steps towards the detection of quantum spin Hall states in transport measurements.

cond-mat.mes-hall↗

arXiv2021

Local manifestations of thickness dependent topology and axion edge state in topological magnet MnBi$_2$Te$_4$

The interplay of non-trivial band topology and magnetism gives rise to a series of exotic quantum phenomena, such as the emergent quantum anomalous Hall (QAH) effect and topological magnetoelectric effect. Many of these quantum phenomena have local manifestations when the global symmetry is broken. Here, we report local signatures of the thickness dependent topology in intrinsic magnetic topological insulator MnBi$_2$Te$_4$(MBT), using scanning tunneling microscopy and spectroscopy on molecular beam epitaxy grown MBT thin films. A thickness-dependent band gap with an oscillatory feature is revealed, which we reproduce with theoretical calculations. Our theoretical results indicate a topological quantum phase transition beyond a film thickness of one monolayer, with alternating QAH and axion insulating states for even and odd layers, respectively. At an even-odd layer step, a localized gapped electronic state is observed, in agreement with an axion insulator edge state that results from a phase transition across the step. The demonstration of thickness-dependent topological properties highlights the role of nanoscale control over novel quantum states, reinforcing the necessity of thin film technology in quantum information science applications.

cond-mat.mes-hall↗

arXiv2020

An unexplored MBE growth mode reveals new properties of superconducting NbN

Accessing unexplored conditions in crystal growth often reveals remarkable surprises and new regimes of physical behavior. In this work, performing molecular beam epitaxy of the technologically important superconductor NbN at temperatures greater than 1000$^\circ$C, higher than in the past, is found to reveal persistent RHEED oscillations throughout the growth, atomically smooth surfaces, normal metal resistivities as low as 37$μΩ$-cm and superconducting critical temperatures in excess of 15 K. Most remarkably, a reversal of the sign of the Hall coefficient is observed as the NbN films are cooled, and the high material quality allows the first imaging of Abrikosov vortex lattices in this superconductor.

cond-mat.mtrl-sci↗