arXiv subjects

Fenglin Wang

Publications and source records attributed to Fenglin Wang.

11 recordsLinked to original sources

arXiv2023

Discrepancies of subtrees

We study multicolour, oriented and high-dimensional discrepancies of the set of all subtrees of a tree. As our main result, we show that the $r$-colour discrepancy of the subtrees of any tree is a linear function of the number of leaves $\ell$ of that tree. More concretely, we show that it is bounded by $\lceil(r-1)\ell/r\rceil$ from below and $\lceil(r-1)\ell/2\rceil$ from above, and that these bounds are asymptotically sharp. Motivated by this result, we introduce natural notions of oriented and high-dimensional discrepancies and prove bounds for the corresponding discrepancies of the set of all subtrees of a given tree as functions of its number of leaves.

math.CO↗

arXiv2020

X-ray diffractive imaging of controlled gas-phase molecules: Toward imaging of dynamics in the molecular frame

We report experimental results on the diffractive imaging of three-dimensionally aligned 2,5-diiodothiophene molecules. The molecules were aligned by chirped near-infrared laser pulses, and their structure was probed at a photon energy of 9.5 keV ($λ\approx130 \text{pm}$) provided by the Linac Coherent Light Source. Diffracted photons were recorded on the CSPAD detector and a two-dimensional diffraction pattern of the equilibrium structure of 2,5-diiodothiophene was recorded. The retrieved distance between the two iodine atoms agrees with the quantum-chemically calculated molecular structure to within 5 %. The experimental approach allows for the imaging of intrinsic molecular dynamics in the molecular frame, albeit this requires more experimental data which should be readily available at upcoming high-repetition-rate facilities.

physics.atm-clus↗

arXiv2018

Thermal x-ray diffraction and near-field phase contrast imaging

Using higher-order coherence of thermal light sources, the resolution power of standard x-ray imaging techniques can be enhanced. In this work, we applied the higher-order measurement to far-field x-ray diffraction and near-field phase contrast imaging (PCI), in order to achieve superresolution in x-ray diffraction and obtain enhanced intensity contrast in PCI. The cost of implementing such schemes is minimal compared to the methods that achieve similar effects by using entangled x-ray photon pairs.

physics.optics↗

arXiv2015

Diffractive imaging of a molecular rotational wavepacket with femtosecond Megaelectronvolt electron pulses

Imaging changes in molecular geometries on their natural femtosecond timescale with sub-Angstrom spatial precision is one of the critical challenges in the chemical sciences, since the nuclear geometry changes determine the molecular reactivity. For photoexcited molecules, the nuclear dynamics determine the photoenergy conversion path and efficiency. We performed a gas-phase electron diffraction experiment using Megaelectronvolt (MeV) electrons, where we captured the rotational wavepacket dynamics of nonadiabatically laser-aligned nitrogen molecules. We achieved an unprecedented combination of 100 fs root-mean-squared (RMS) temporal resolution and sub-Angstrom (0.76 Å) spatial resolution that makes it possible to resolve the position of the nuclei within the molecule. In addition, the diffraction patterns reveal the angular distribution of the molecules, which changes from prolate (aligned) to oblate (anti-aligned) in 300 fs. Our results demonstrate a significant and promising step towards making atomically resolved movies of molecular reactions.

physics.atom-ph↗

arXiv2015

Strongly aligned gas-phase molecules at Free-Electron Lasers

We demonstrate a novel experimental implementation to strongly align molecules at full repetition rates of free-electron lasers. We utilized the available in-house laser system at the coherent x-ray imaging beamline at the Linac Coherent Light Source. Chirped laser pulses, i. e., the direct output from the regenerative amplifier of the Ti:Sa chirped pulse amplification laser system, were used to strongly align 2,5-diiodothiophene molecules in a molecular beam. The alignment laser pulses had pulse energies of a few mJ and a pulse duration of 94 ps. A degree of alignment of $\left<\cos^2\!θ_{2D}\right>$ = 0.85 was measured, limited by the intrinsic temperature of the molecular beam rather than by the available laser system. With the general availability of synchronized chirped-pulse-amplified near-infrared laser systems at short-wavelength laser facilities, our approach allows for the universal preparation of molecules tightly fixed in space for experiments with x-ray pulses.

physics.atm-clus↗

arXiv2013

Transport in Suspended Monolayer and Bilayer Graphene Under Strain: A New Platform for Material Studies

We develop two types of graphene devices based on nanoelectromechanical systems (NEMS), that allows transport measurement in the presence of in situ strain modulation. Different mobility and conductance responses to strain were observed for single layer and bilayer samples. These types of devices can be extended to other 2D membranes such as MoS2, providing transport, optical or other measurements with in situ strain.

cond-mat.mtrl-sci↗

arXiv2013

Organometallic Hexahapto Functionalization of Single Layer Graphene as a Route to High Mobility Graphene Devices

Organometallic hexahapto chromium metal complexation of single layer graphene, which involves constructive rehybridization of the graphene pi-system with the vacant chromium d orbital, leads to field effect devices which retain a high degree of the mobility with enhanced on-off ratio. This hexahapto mode of bonding between metal and graphene is quite distinct from the modification in electronic structure induced by conventional covalent sigma-bond formation with creation of sp3 carbon centers in graphene lattice and this chemistry is reversible.

cond-mat.mes-hall↗

arXiv2013

Local Spectroscopy of the Electrically Tunable Band Gap in Trilayer Graphene

The stacking order degree of freedom in trilayer graphene plays a critical role in determining the existence of an electric field tunable band gap. We present spatially-resolved tunneling spectroscopy measurements of dual gated Bernal (ABA) and rhombohedral (ABC) stacked trilayer graphene devices. We demonstrate that while ABA trilayer graphene remains metallic, ABC trilayer graphene exhibits a widely tunable band gap as a function of electric field. However, we find that charged impurities in the underlying substrate cause substantial spatial fluctuation of the gap size. Our work elucidates the microscopic behavior of trilayer graphene and its consequences for macroscopic devices.

cond-mat.mes-hall↗

arXiv2012

Visualizing Electrical Breakdown and ON/OFF States in Electrically Switchable Suspended Graphene Break Junctions

Narrow gaps are formed in suspended single to few layer graphene devices using a pulsed electrical breakdown technique. The conductance of the resulting devices can be programmed by the application of voltage pulses, with a voltage of 2.5V~4.5V corresponding to an ON pulse and voltages ~8V corresponding to OFF pulses. Electron microscope imaging of the devices shows that the graphene sheets typically remain suspended and that the device conductance tends to zero when the observed gap is large. The switching rate is strongly temperature dependent, which rules out a purely electromechanical switching mechanism. This observed switching in suspended graphene devices strongly suggests a switching mechanism via atomic movement and/or chemical rearrangement, and underscores the potential of all-carbon devices for integration with graphene electronics.

cond-mat.mes-hall↗

arXiv2012

Aryl Functionalization as a Route to Band Gap Engineering in Single Layer Graphene Devices

Chemical functionalization is a promising route to band gap engineering of graphene. We chemically grafted nitrophenyl groups onto exfoliated single-layer graphene sheets in the form of substrate-supported or free-standing films. Our transport measurements demonstrate that non-suspended functionalized graphene behaves as a granular metal, with variable range hopping transport and a mobility gap ~ 0.1 eV at low temperature. For suspended graphene that allows functionalization on both surfaces, we demonstrate tuning of its electronic properties from a granular metal to a gapped semiconductor, in which charge transport occurs via thermal activation over a gap ~ 80 meV. This non-invasive and scalable functionalization technique paves the way for CMOS-compatible band gap engineering of graphene electronic devices.

cond-mat.mes-hall↗

arXiv2010

Suspension and Measurement of Graphene and Bi2Se3 Atomic Membranes

Coupling high quality, suspended atomic membranes to specialized electrodes enables investigation of many novel phenomena, such as spin or Cooper pair transport in these two dimensional systems. However, many electrode materials are not stable in acids that are used to dissolve underlying substrates. Here we present a versatile and powerful multi-level lithographical technique to suspend atomic membranes, which can be applied to the vast majority of substrate, membrane and electrode materials. Using this technique, we fabricated suspended graphene devices with Al electrodes and mobility of 5500 cm^2/Vs. We also demonstrate, for the first time, fabrication and measurement of a free-standing thin Bi2Se3 membrane, which has low contact resistance to electrodes and a mobility of >~500 cm^2/Vs.

cond-mat.mes-hall↗