arXiv subjects

Fengyi Guo

Publications and source records attributed to Fengyi Guo.

7 recordsLinked to original sources

arXiv2026

Probing the anomalous symmetry-breaking in kagome material CsV3Sb5 via third-order nonlinearity

The kagome material has rapidly established itself as a research frontier in condensed matter physics, owing to its distinctive geometric structure and the rich array of unconventional physical phenomena. In the kagome AV3Sb5 (A = K, Rb, Cs) family, the charge-ordered state exhibits a remarkable characteristic, i.e., anomalous symmetry-breaking, which is tied to the topological nature of the electronic band structure. Here, we report the third-order nonlinear longitudinal and Hall responses that persist stably up to room temperature in the kagome material CsV3Sb5. Notably, the nonlinear responses demonstrate significant enhancement below the charge density wave (~ 77 K) order and anomalous symmetry-breaking (~ 39 K) state. The scaling analysis indicates that the third-order nonlinear transport is governed jointly by quantum geometric contribution and extrinsic scattering. This study realizes a giant third-order nonlinear response and provides a distinct method to detect anomalous symmetry-breaking in CsV3Sb5.

cond-mat.str-el↗

arXiv2026

Higher odd-order nonlinear Hall effect in magnetic topological insulator Mn(Bi1-xSbx)2Te4

The nonlinear Hall effect is a new member of the Hall effect family, which attracts intense research interests, and it is closely related to the quantum geometry of quantum materials. The previous studies primarily concentrate on the second-order and third-order nonlinear Hall effect. However, the experimental study of higher-order nonlinear Hall effect is scarce at present. In this work, we report the observations of the higher odd-order (third-, fifth-, seventh-order) nonlinear Hall effect in magnetic topological insulator Mn(Bi1-xSbx)2Te4 thin flakes. The higher odd-order nonlinear Hall voltage exhibits a twofold angular dependence and exists only below the Néel temperature. It reaches its maximum near the charge neutral point and decays exponentially as the order of the nonlinear Hall effect increases. Furthermore, such higher odd-order nonlinear Hall effect is observed in both odd- and even-layer samples with comparable magnitudes. Theoretical analysis indicates that the higher odd-order nonlinear Hall effect responses may arise from the Berry curvature multipoles. Our work paves the way for the study of the higher-order nonlinear transport phenomena.

cond-mat.mes-hall↗

arXiv2026

Room-temperature third-order nonlinear anomalous Hall effect in ferromagnetic metal Fe3GaTe2

Berry curvature, as the imaginary component of quantum geometry, plays a crucial role in condensed matter physics. The spatial distribution of Berry curvature can be characterized by its dipole and multipole moments, which can induce the nonlinear anomalous Hall effect (NLAHE). To date, the NLAHE has been demonstrated in various materials, yet reports on room-temperature NLAHE are still limited. In this work, we report the observation of the third-order NLAHE in ferromagnetic metal Fe3GaTe2. The third-order NLAHE shows hysteretic behavior with the variation of magnetic field, where the coercive field is the same as that of the anomalous Hall effect, and the third-order NLAHE remains observable up to the Curie temperature (~350 K). The scaling analysis suggests that the third-order NLAHE may be attributed to the Berry curvature quadrupole. Our work not only provides an approach to study magnetic materials through nonlinear electric transports, but also opens up possibilities for the future development of room-temperature third-order nonlinear electronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Field-free superconducting diode effect of NbSe2 induced by strain

Superconducting diodes, similar to semiconductor diodes, possess unidirectional superconducting properties and are the fundamental units for constructing superconducting quantum computing, thus attracting widespread attention. At present, most of superconducting diodes require an external magnetic field or proximity effect to break time reversal symmetry (TRS). The cases of intrinsic superconducting diode effect (SDE) under zero magnetic field are relatively scarce, and there are still some puzzles especially regarding the reasons for the TRS breaking. Here, we not only report field free SDE in NbSe2 induced by strain, but also large values of the difference of Ic+ and |Ic-| (ΔIc) of 286 μA and the superconducting diode efficiency (η) of 6.76 % are achieved. Interestingly, ΔIc varies with the magnetic field and exhibits two distinct evolutionary behaviors with B-odd or B-even symmetry in various devices. We attribute this to the selective activation of two independent, spatially-orthogonal mechanisms: a stress-induced real-space polarity and a field-induced reciprocal-space asymmetric energy bands. In general, we propose an extremely effectively method to produce field free SDE, even when the material itself does not possess field free SDE, and provide new perspectives to understand the SDE which build new avenues for superconducting quantum devices.

cond-mat.mtrl-sci↗

arXiv2024

Observation of giant nonreciprocal charge transport from quantum Hall states in a topological insulator

Symmetry breaking in quantum materials is of great importance and can lead to nonreciprocal charge transport. Topological insulators provide a unique platform to study nonreciprocal charge transport due to their surface states, especially quantum Hall states under external magnetic field. Here, we report the observation of nonreciprocal charge transport mediated by quantum Hall states in devices composed of the intrinsic topological insulator Sn-Bi1.1Sb0.9Te2S, which is attributed to asymmetric scattering between quantum Hall states and Dirac surface states. A giant nonreciprocal coefficient of up to 2.26*10^5 A^-1 is found. Our work not only reveals the properties of nonreciprocal charge transport of quantum Hall states in topological insulators, but also paves the way for future electronic devices.

cond-mat.mes-hall↗

arXiv2023

Magnetic kagome materials RETi3Bi4 family with weak interlayer interactions

Kagome materials have attracted a surge of research interest recently, especially for the ones combining with magnetism, and the ones with weak interlayer interactions which can fabricate thin devices. However, kagome materials combining both characters of magnetism and weak interlayer interactions are rare. Here we investigate a new family of titanium based kagome materials RETi3Bi4 (RE = Eu, Gd and Sm). The flakes of nanometer thickness of RETi3Bi4 can be obtained by exfoliation due to the weak interlayer interactions. According to magnetic measurements, out-of-plane ferromagnetism, out-of-plane anti-ferromagnetism, and in-plane ferromagnetism are formed for RE = Eu, Gd, and Sm respectively. The magnetic orders are simple and the saturation magnetizations can be relatively large since the rare earth elements solely provide the magnetic moments. Further by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations, the electronic structures of RETi3Bi4 are investigated. The ARPES results are consistent with the calculations, indicating the bands characteristic with kagome sublattice in RETi3Bi4. We expect these materials to be promising candidates for observation of the exotic magnetic topological phases and the related topological quantum transport studies.

cond-mat.mtrl-sci↗

arXiv2022

Large Exchange Bias Effect and Coverage-Dependent Interfacial Coupling in CrI3/MnBi2Te4 van der Waals Heterostructures

Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional devices. Here, we observe an interesting exchange bias effect, indicating successful interfacial magnetic coupling, in CrI3/MnBi2Te4 ferromagnetic insulator/antiferromagnetic topological insulator (FMI/AFM-TI) heterostructure devices. The devices originally exhibit a negative exchange bias field, which decays with increasing temperature and is unaffected by the back-gate voltage. When we change the device configuration to be half-covered by CrI3, the exchange bias becomes positive with a very large exchange bias field exceeding 300 mT. Such sensitive manipulation is explained by the competition between the FM and AFM coupling at the interface of CrI3 and MnBi2Te4, pointing to coverage-dependent interfacial magnetic interactions. Our work will facilitate the development of topological and antiferromagnetic devices.

cond-mat.mtrl-sci↗