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Flavia Viola Di Girolamo

Publications and source records attributed to Flavia Viola Di Girolamo.

3 recordsLinked to original sources

Local tuning of WS2 photoluminescence using polymeric micro-actuators in a monolithic van der Waals heterostructure

The control of the local strain profile in 2D materials offers an invaluable tool for tailoring the electronic and photonic properties of solid-state devices. In this paper, we demonstrate a local engineering of the exciton photoluminescence (PL) energy of monolayer tungsten disulfide (WS2) by means of strain. We apply a local uniaxial stress to WS2 by exploiting electron-beam patterned and actuated polymeric micrometric artificial muscles (MAMs), which we implement onto monolithic synthetic WS2/graphene heterostructures. We show that MAMs are able to induce an in-plane stress to the top WS2 layer of the van der Waals heterostructure and that the latter can slide on the graphene underneath with negligible friction. As a proof of concept for the local strain-induced PL shift experiments, we exploit a two-MAM configuration in order to apply uniaxial tensile stress on well-defined micrometric regions of WS2. Remarkably, our architecture does not require the adoption of fragile suspended microstructures. We observe a spatial modulation of the excitonic PL energy of the WS2 monolayers under stress, which agrees with the expected strain profile and attains a maximum redshift of about 40 meV at the maximum strain intensity point. After the actuation, a time-dependent PL blueshift is observed in agreement with the viscoelastic properties of the polymeric MAMs. Our approach enables inducing local and arbitrary deformation profiles and circumvents some key limitations and technical challenges of alternative strain engineering methods requiring the 2D material transfer and production of suspended membranes.

cond-mat.mes-hall↗

Microstructured tunable two dimensional potential modulation in organic heterostructure field effect transistors

In this paper, two dimensional modulation of the potential in sexithiophene (T6) / N,N-bis(n-octyl)-dicyanoperylenediimide (PDI-8CN2) heterojunction field effect transistors due to the specific microstructure at the interface is used to explain the negative transconductance effect (NTC) experienced in sexithiophene (T6) / N,N-bis(n-octyl)-dicyanoperylenediimide (PDI-8CN2) heterojunction field effect transistors. The NTC effect has been experienced in tunnel devices, such as the tunnel diode, the resonant tunneling field effect transistors (RT-FETs), resonant tunneling double barrier devices. In grid-gate modulation-doped field effect transistors, instead, a periodic potential barriers in the direction of the transport of charges was used to explain the negative transconductance (NDR). Since in T6 / PDI-8CN2 heterojunction field effect transistors the NTC effect is irrespective of the order of the semiconductor layer and since the modulation of the transport properties is deeply influenced by the island dimension of the semiconductor layer, we argue that the origin of the NTC effect resides in the achievement of a specific microstructure of the heterostructure in the charge transport plane.

cond-mat.mtrl-sci↗

Photoemission study of PDI8-CN2 /Au, PDI8-CN2 / Si and PDI8-CN2 - T6 interfaces

We report on the study of the electronic properties in PDI8-CN2 / Au, PDI8-CN2 / Si, PDI8-CN2 - T6 interfaces investigated by X-Ray (XPS) and Ultraviolet (UPS) Photoemission Spectroscopy. In order to verify the consistency with the results on field effect devices, heated substrates have been considered, while only in the case of PDI8-CN2 / Au interface also sputter-cleaned Au has been used as a reference. We found a small interface dipole between PDI8-CN2 and sputter-cleaned Au, which reverses its sign as a consequence of the 'pillow effect' due to the presence of the contamination layer in the heated substrates. This result is in agreement with the transport measurements on PDI8-CN2 field effect transistors, which show an 'always on' behavior. We also found evidences of the formation of a built-in potential in T6 / PDI8-CN2 and PDI8-CN2 / T6 interfaces, mainly from the T6 side. This also well agrees with previous results on T6 / PDI8-CN2 heterostructures devices, exhibiting transport properties explainable with the presence of an accumulation heterojunction at the interface.

cond-mat.mtrl-sci↗