arXiv subjects

Florian Kronast

Publications and source records attributed to Florian Kronast.

At least 19 recordsLinked to original sources

arXiv2026

Writing and erasing skyrmions by single ultrafast laser pulses in monolayer Janus 2D magnets

Skyrmions in 2D magnets are promising candidates for nonvolatile, low-power, and high-density spintronic memories. However, their experimental realization at the 2D limit remains challenging, owing to the difficulty in engineering the required chiral magnetic interactions. Here, we report the creation and direct imaging of N\'eel-type skyrmions in Janus 2D chromium chalcogenides using synchrotron X-ray photoemission electron microscopy, and scanning nitrogen-vacancy magnetometry, which exhibit field-free stability, nonvolatility, and size tunability. First-principles calculations and micromagnetic simulations reveal that Janus-surface-induced inversion-symmetry breaking enhances the Dzyaloshinskii-Moriya interaction, providing the microscopic mechanism for skyrmion stabilization and tunability. We further achieve reversible skyrmion writing and erasing using a single ultrafast laser pulse in a magnetic field as low as 300 Oe, demonstrating the excellent manipulability of this 2D magnetic system. These results establish Janus engineering as a route to creating and manipulating nonvolatile skyrmions in atomically thin magnets, with implications for skyrmion-based low-power spintronic devices.

cond-mat.mtrl-sci↗

arXiv2026

Element-Specific Visualization of Layer-Parity and Twist-Dependent Magnetism in CrSBr

Van der Waals (vdW) based antiferromagnets (AFMs) are an ideal platform for probing and understanding thickness- and twist-angle-dependent emergent spin phenomena. However, element-specific nanoscale characterization of the spin structure in atomically thin vdW-based AFMs systems and layer-parity effects remain elusive, making them crucial for both fundamental insight into low-dimensional magnetism and the rational design of spintronic devices based on these materials. Here, we utilize X-ray magnetic circular and linear dichroisms paired with photoemission electron microscopy to resolve the magnetic order in atomically thin CrSBr. Our comprehensive measurements reveal CrSBr magnetic structure at the nanoscale and its dependence on the layer number, surface encapsulation, temperature, and applied field. Moreover, in the orthogonally twisted bilayer configuration, obtained by twisting two CrSBr ferromagnetic monolayers by 90$^\circ$, the magnetic easy axis fundamentally differs from the individual monolayers, unlocking a new pathway for moir\'e magnetism.

cond-mat.mes-hall↗

arXiv2025

Studying all-optical magnetization switching of GdFe by double-pulse laser excitation

The tremendous interest in the technology and underlying physics of all-optical switching of magnetization brings up the question of how fast the switching can occur and how high the frequency of writing the data with ultrafast laser pulses can be. To answer this question, we excited a GdFe ferrimagnetic alloy, the magnetization of which can be reversed by single laser pulses, a phenomenon known as toggle switching, by two pulses with a certain time delay in between. Using photoemission electron microscopy and Kerr microscopy for magnetic domain imaging, we explore the effects of varying fluences of the first and second pulse as well as the time delay between the two pulses. Our results show that when the fluence of the first pulse is adjusted just above the threshold of single-pulse switching, a second pulse with about 60% of the fluence of the first pulse, arriving only 3 ps later, switches the magnetization back. This reswitching persists up to about 40 ps pulse separation. We interpret the latter as the time required for the sample to cool down and remagnetize after the first pulse. For shorter time delays below about 2 ps, no re-switching occurs. However, the effect of the two pulses adds up, enabling switching for fluences of both pulses below the threshold for single-pulse switching. Atomistic spin dynamics simulations are used to model the experimental data, successfully confirming our results.

cond-mat.mtrl-sci↗

arXiv2023

Domain nucleation across the metal-insulator transition of self-strained V2O3 films

Bulk V2O3 features concomitant metal-insulator (MIT) and structural (SPT) phase transitions at TC ~ 160 K. In thin films, where the substrate clamping can impose geometrical restrictions on the SPT, the epitaxial relation between the V2O3 film and substrate can have a profound effect on the MIT. Here we present a detailed characterization of domain nucleation and growth across the MIT in (001)-oriented V2O3 films grown on sapphire. By combining scanning electron transmission microscopy (STEM) and photoelectron emission microscopy (PEEM), we imaged the MIT with planar and vertical resolution. We observed that upon cooling, insulating domains nucleate at the top of the film, where strain is lowest, and expand downwards and laterally. This growth is arrested at a critical thickness of 50 nm from the substrate interface, leaving a persistent bottom metallic layer. As a result, the MIT cannot take place in the interior of films below this critical thickness. However, PEEM measurements revealed that insulating domains can still form on a very thin superficial layer at the top interface. Our results demonstrate the intricate spatial complexity of the MIT in clamped V2O3, especially the strain-induced large variations along the c-axis. Engineering the thickness-dependent MIT can provide an unconventional way to build out-of-plane geometry devices by using the persistent bottom metal layer as a native electrode.

cond-mat.mtrl-sci↗

arXiv2023

Magneto-ionic modulation of the interlayer exchange interaction in synthetic antiferromagnets

The electric-field control of magnetism is a highly promising and potentially effective approach for achieving energy-efficient applications. In recent times, there has been significant interest in the magneto-ionic effect in synthetic antiferromagnets, primarily due to its strong potential in the realization of high-density storage devices with ultra-low power consumption. However, the underlying mechanism responsible for the magneto-ionic effect on the interlayer exchange coupling (IEC) remains elusive. In this study, we have successfully identified that the magneto-ionic control of the properties of the top ferromagnetic layer of the synthetic antiferromagnet (SyAFM), which is in contact with the high ion mobility oxide, plays a pivotal role in driving the observed gate-induced changes to the IEC. Our findings provide crucial insights into the intricate interplay between stack structure and magnetoionic-field effect on magnetic properties in synthetic antiferromagnetic thin film systems.

cond-mat.mes-hall↗

arXiv2023

Probing magnetic ordering in air stable iron-rich van der Waals minerals

In the rapidly expanding field of two-dimensional materials, magnetic monolayers show great promise for the future applications in nanoelectronics, data storage, and sensing. The research in intrinsically magnetic two-dimensional materials mainly focuses on synthetic iodide and telluride based compounds, which inherently suffer from the lack of ambient stability. So far, naturally occurring layered magnetic materials have been vastly overlooked. These minerals offer a unique opportunity to explore air-stable complex layered systems with high concentration of local moment bearing ions. We demonstrate magnetic ordering in iron-rich two-dimensional phyllosilicates, focusing on mineral species of minnesotaite, annite, and biotite. These are naturally occurring van der Waals magnetic materials which integrate local moment baring ions of iron via magnesium/aluminium substitution in their octahedral sites. Due to self-inherent capping by silicate/aluminate tetrahedral groups, ultra-thin layers are air-stable. Chemical characterization, quantitative elemental analysis, and iron oxidation states were determined via Raman spectroscopy, wavelength disperse X-ray spectroscopy, X-ray absorption spectroscopy, and X-ray photoelectron spectroscopy. Superconducting quantum interference device magnetometry measurements were performed to examine the magnetic ordering. These layered materials exhibit paramagnetic or superparamagnetic characteristics at room temperature. At low temperature ferrimagnetic or antiferromagnetic ordering occurs, with the critical ordering temperature of 38.7 K for minnesotaite, 36.1 K for annite, and 4.9 K for biotite. In-field magnetic force microscopy on iron bearing phyllosilicates confirmed the paramagnetic response at room temperature, present down to monolayers.

cond-mat.mtrl-sci↗

arXiv2023

Laser-induced Creation of antiferromagnetic 180-degree domains in NiO/Pt bilayers

We demonstrate how the antiferromagnetic order in heterostructures of NiO/Pt thin films can be modified by optical pulses. We irradiate our samples with laser light and identify an optically induced creation of antiferromagnetic domains by imaging the created domain structure utilizing the X-ray magnetic linear dichroism effect. We study the effect of different laser polarizations on the domain formation and identify a polarization-independent creation of 180° domain walls and domains with 180° different Néel vector orientation. By varying the irradiation parameters, we determine the switching mechanism to be thermally induced and demonstrate the reversibility. We thus demonstrate experimentally the possibility to optically create antiferromagnetic domains, an important step towards future functionalization of all optical switching mechanisms in antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2022

Role of substrate clamping on anisotropy and domain structure in the canted antiferromagnet $α$-Fe$_2$O$_3$

Antiferromagnets have recently been propelled to the forefront of spintronics by their high potential for revolutionizing memory technologies. For this, understanding the formation and driving mechanisms of the domain structure is paramount. In this work, we investigate the domain structure in a thin-film canted antiferromagnet $α$-Fe$_2$O$_3$. We find that the internal destressing fields driving the formation of domains do not follow the crystal symmetry of $α$-Fe$_2$O$_3$, but fluctuate due to substrate clamping. This leads to an overall isotropic distribution of the Néel order with locally varying effective anisotropy in antiferromagnetic thin films. Furthermore, we show that the weak ferromagnetic nature of $α$-Fe$_2$O$_3$ leads to a qualitatively different dependence on magnetic field compared to collinear antiferromagnets such as NiO. The insights gained from our work serve as a foundation for further studies of electrical and optical manipulation of the domain structure of antiferromagnetic thin films.

cond-mat.mes-hall↗

arXiv2022

Strain-induced Shape Anisotropy in Antiferromagnetic Structures

We demonstrate how shape-induced strain can be used to control antiferromagnetic order in NiO/Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different domain structures and we identify magnetoelastic interactions that are distinct for different domain configurations. We reproduce the experimental observations by modeling the magnetoelastic interactions, considering spontaneous strain induced by the domain configuration, as well as elastic strain due to the substrate and the shape of the patterns. This allows us to demonstrate and explain how the variation of the aspect ratio of rectangular elements can be used to control the antiferromagnetic ground state domain configuration. Shape-dependent strain does not only need to be considered in the design of antiferromagnetic devices, but can potentially be used to tailor their properties, providing an additional handle to control antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2022

Spin Dynamics, Loop Formation and Cooperative Reversal in Artificial Quasicrystals with Tailored Exchange Coupling

Aperiodicity and un-conventional rotational symmetries allow quasicrystalline structures to exhibit unprecedented physical and functional properties. In magnetism, artificial ferromagnetic quasicrystals exhibited knee anomalies suggesting reprogrammable magnetic properties via nonstochastic switching. However, the decisive roles of short-range exchange and long-range dipolar interactions have not yet been clarified for optimized reconfigurable functionality. We report broadband spin-wave spectroscopy and X-ray photoemission electron microscopy on different quasicrystal lattices consisting of ferromagnetic Ni81Fe19 nanobars arranged on aperiodic Penrose and Ammann tilings with different exchange and dipolar interactions. We imaged the magnetic states of partially reversed quasicrystals and analyzed their configurations in terms of the charge model, geometrical frustration and the formation of flux-closure loops. Only the exchange-coupled lattices are found to show aperiodicity-specific collective phenomena and non-stochastic switching. Both, exchange and dipolarly coupled quasicrystals show magnonic excitations with narrow linewidths in minor loop measurements. Thereby reconfigurable functionalities in spintronics and magnonics become realistic.

cond-mat.mes-hall↗

arXiv2021

Skyrmions in synthetic antiferromagnets and their nucleation via electrical current and ultrafast laser illumination

Magnetic skyrmions are topological spin textures that hold great promise as nanoscale information carriers in non-volatile memory and logic devices. While room-temperature magnetic skyrmions and their current-induced manipulation were recently demonstrated, the stray field resulting from their finite magnetization as well as their topological charge limit their minimum size and reliable motion in tracks. Antiferromagnetic (AF) skyrmions allow these limitations to be lifted owing to their vanishing magnetization and net zero topological charge, promising room-temperature, ultrasmall skyrmions, fast dynamics, and insensitivity to external magnetic fields. While room-temperature AF spin textures have been recently demonstrated, the observation and controlled nucleation of AF skyrmions operable at room temperature in industry-compatible synthetic antiferromagnetic (SAF) material systems is still lacking. Here we demonstrate that isolated skyrmions can be stabilized at zero field and room temperature in a fully compensated SAF. Using X-ray microscopy techniques, we are able to observe the skyrmions in the different SAF layers and demonstrate their antiparallel alignment. The results are substantiated by micromagnetic simulations and analytical models using experimental parameters, which confirm the chiral SAF skyrmion spin texture and allow the identification of the physical mechanisms that control the SAF skyrmion size and stability. We also demonstrate the local nucleation of SAF skyrmions via local current injection as well as ultrafast laser excitations at zero field. These results will enable the utilization of SAF skyrmions in skyrmion-based devices.

cond-mat.mtrl-sci↗

arXiv2021

Influence of magnetic domain walls on all-optical magnetic toggle switching in a ferrimagnetic GdFe film

We present a microscopic magnetic domain imaging study of single-shot all-optical magnetic toggle switching of a ferrimagnetic Gd$_{26}$Fe$_{74}$ film with out-of-plane easy axis of magnetization by x-ray magnetic circular dichroism photoelectron emission microscopy. Individual linearly polarized laser pulses of 800 nm wavelength and 100 fs duration above a certain threshold fluence reverse the sample magnetization, independent of the magnetization direction, the so-called toggle switching. Local deviations from this deterministic behavior close to magnetic domain walls are studied in detail. Reasons for nondeterministic toggle switching are related to extrinsic effects, caused by pulse-to-pulse variations of the exciting laser system, and to intrinsic effects related to the magnetic domain structure of the sample. The latter are, on the one hand, caused by magnetic domain wall elasticity, which leads to a reduction of the domain-wall length at sharp tipped features. These features appear after the optical switching at positions where the line of constant threshold fluence in the Gaussian footprint of the laser pulse comes close to an already-existing domain wall. On the other hand, we identify the presence of laser-induced domain-wall motion in the toggle-switching event as a further cause for local deviations from purely deterministic toggle switching.

cond-mat.mes-hall↗

arXiv2021

Identification of Néel vector orientation in antiferromagnetic domains switched by currents in NiO/Pt thin films

Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequency. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the Néel vector direction changes. We demonstrate electrical switching between different T-domains by current pulses, finding that the Néel vector orientation in these domains is along $[\pm5\ \pm5\ 19]$, different compared to the bulk $<11\bar{2}>$ directions. The final state of the Néel vector $\textbf{n}$ switching after current pulses $\textbf{j}$ along the $[1\ \pm1\ 0]$ directions is $\textbf{n}\parallel \textbf{j}$. By comparing the observed Néel vector orientation and the strain in the thin films, assuming that this variation arises solely from magnetoelastic effects, we quantify the order of magnitude of the magnetoelastic coupling coefficient as $b_{0}+2b_{1}=3*10^7 J\ m^{-3}$ . This information is key for the understanding of current-induced switching in antiferromagnets and for the design and use of such devices as active elements in spintronic devices.

cond-mat.mtrl-sci↗

arXiv2021

Propagation length of antiferromagnetic magnons governed by domain configurations

The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic spin-waves in thin films is anticipated to lead to new exotic phenomena such as spin-superfluidity, requiring an efficient propagation of spin-waves in thin films. However, the reported decay length in thin films has so far been limited to a few nanometers. In this work, we achieve efficient spin-wave propagation, over micrometer distances, in thin films of the insulating antiferromagnet hematite with large magnetic domains whilst evidencing much shorter attenuation lengths in multidomain thin films. Through transport and magnetic imaging, we conclude on the role of the magnetic domain structure and spin-wave scattering at domain walls to govern the transport. We manipulate the spin transport by tailoring the domain configuration through field cycle training. For the appropriate crystalline orientation, zero-field spin-transport is achieved across micrometers, as required for device integration.

cond-mat.mtrl-sci↗

arXiv2020

Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films

Reading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite (α-Fe2O3) and find an SMR efficiency of up to 0.1%, comparable to ferromagnetic based structures. To understand the observed complex SMR field dependence, we analyse the effect of misalignments of the magnetic axis that arise during growth of thin films, by electrical measurements and direct magnetic imaging, and find that a small deviation can result in significant signatures in the SMR response. This highlights the care that must be taken when interpreting SMR measurements on AFM spin textures.

cond-mat.mtrl-sci↗

arXiv2019

Mechanism of Néel order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging

We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.

cond-mat.mtrl-sci↗

arXiv2019

Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir

Non-collinear antiferromagnets, with either an L1$_{2}$ cubic crystal lattice (e.g. Mn$_{3}$Ir and Mn$_{3}$Pt) or a D0$_{19}$ hexagonal structure (e.g. Mn$_{3}$Sn and Mn$_{3}$Ge), exhibit a number of novel phenomena of interest to topological spintronics. Amongst the cubic systems, for example, tetragonally distorted Mn$_{3}$Pt exhibits an intrinsic anomalous Hall effect (AHE). However, Mn$_{3}$Pt only enters a non-collinear magnetic phase close to the stoichiometric composition and at suitably large thicknesses. Therefore, we turn our attention to Mn$_{3}$Ir, the material of choice for use in exchange bias heterostructures. In this paper, we investigate the magnetic and electrical transport properties of epitaxially grown, face-centered-cubic $γ$-Mn$_{3}$Ir thin films with (111) crystal orientation. Relaxed films of 10 nm thickness exhibit an ordinary Hall effect, with a hole-type carrier concentration of (2.24 $\pm$ 0.08) $\times$ 10$^{23}$ cm$^{-3}$. On the other hand, TEM characterization demonstrates that ultrathin 3 nm films grow with significant in-plane tensile strain. This may explain a small remanent moment, observed at low temperatures, shown by XMCD spectroscopy to arise from uncompensated Mn spins. Of the order 0.02 $μ_{B}$ / atom, this dominates electrical transport behavior, leading to a small AHE and negative magnetoresistance. These results are discussed in terms of crystal microstructure and chiral domain behavior, with spatially resolved XML(C)D-PEEM supporting the conclusion that small antiferromagnetic domains, < 20 nm in size, of differing chirality account for the absence of observed Berry curvature driven magnetotransport effects.

cond-mat.mtrl-sci↗

arXiv2019

Anisotropies and magnetic phase transitions in insulating antiferromagnets determined by a Spin-Hall magnetoresistance probe

We demonstrate that we can determine the antiferromagnetic anisotropies and the bulk Dzyaloshinskii-Moriya fields of the insulating iron oxide hematite, α-Fe2O3, using a surface sensitive spin-Hall magnetoresistance (SMR) technique. We develop an analytical model that in combination with SMR measurements, allow for the identification of the material parameters of this prototypical antiferromagnet over a wide range of temperatures and magnetic field values. Using devices with different orientations, we demonstrate that the SMR response strongly depends on the direction of the charge current with respect to the magneto-crystalline anisotropies axis. We show that we can extract the anisotropies over a wide temperature range including across the Morin phase transition. We observe that the electrical response is dominated by the orientation of the antiferromagnetic Néel order parameter, rather than by the emergent weak magnetic moment. Our results highlight that the surface sensitivity of the SMR allows accessing the magnetic anisotropies of antiferromagnetic crystals and in particular thin films where other methods to determine anisotropies such as bulk-sensitive magnetic susceptibility measurements do not provide sufficient sensitivity.

cond-mat.mes-hall↗