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arXiv · 1810.11326

Mechanism of N\'eel order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging

Lorenzo Baldrati·Olena Gomonay·Andrew Ross·Mariia Filianina·Romain Lebrun·Rafael Ramos·Cyril Leveille·Felix Fuhrmann·Thomas Forrest·Francesco Maccherozzi·Sergio Valencia·Florian Kronast·Eiji Saitoh·Jairo Sinova·Mathias Kläui
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Abstract

We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.

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Lorenzo Baldrati, Olena Gomonay, Andrew Ross, Mariia Filianina, Romain Lebrun, Rafael Ramos, Cyril Leveille, Felix Fuhrmann, Thomas Forrest, Francesco Maccherozzi, Sergio Valencia, Florian Kronast, Eiji Saitoh, Jairo Sinova, Mathias Kläui. 2018-10-26. Mechanism of N\'eel order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging. https://doi.org/10.1103/physrevlett.123.177201

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