arXiv subjects

Francesco Giazotto

Publications and source records attributed to Francesco Giazotto.

At least 37 records · Page 2Linked to original sources

arXiv2025

Streamline controlled rectification of supercurrent in thin-film asymmetric weak links

In this study, we examined the supercurrent diode effect (SDE) in mesoscopic superconducting weak links formed by asymmetric Dayem bridges. These planar metallic constrictions, which naturally exhibit Josephsonlike behavior, offer a fundamental platform for investigating nonreciprocal transport phenomena in a regime where the bridge width aligns with the superconducting coherence length. The foundational concept is inspired by the Tesla valve, a classical fluidic device that achieves flow rectification through interference and turbulence between fluid streams enabled by geometric asymmetry. Analogously, we demonstrate that spatial asymmetry within superconducting structures can result in rectification due to the polarity-dependent interaction between transport and screening currents. By implementing controlled geometric defects at the junction between the constriction and superconducting leads, we induce current crowding and disrupt spatial inversion symmetry, thus facilitating directional switching behavior. Experimental results indicate a linear-in-field rectification regime at low magnetic fields, driven by the interaction between transport and screening currents, which is succeeded by complex vortex dynamics within the superconducting banks at elevated fields. Time-dependent Ginzburg-Landau simulations replicate significant features of the experimental observations and substantiate the influence of both screening currents and rearrangements of Abrikosov vortices. A comparative study across various geometries highlights the crucial role of defect shape and spatial confinement in determining the rectification efficiency, revealing a minimum threshold in bridge width below which crowding-induced SDE is significantly reduced. Our findings advocate for mesoscopic Dayem bridges as a flexible platform for designing and controlling superconducting diode functionalities.

cond-mat.supr-con↗

arXiv2025

Quasi-$Φ_0$-periodic supercurrent at quantum Hall transitions

The combination of superconductivity and quantum Hall (QH) effect is regarded as a key milestone in advancing topological quantum computation in solid-state systems. Recent quantum interference studies suggest that QH edge states can effectively mediate a supercurrent across high-quality graphene weak links. In this work we report the observation of a supercurrent associated with transitions between adjacent QH plateaus, where transport paths develop within the compressible two-dimensional bulk. We employ a back-gated graphene Josephson junction, comprising high-mobility CVD-grown graphene encapsulated in hexagonal Boron Nitride (hBN) and contacted by Nb leads. Superconducting pockets are detected persisting beyond the QH onset, up to 2.4 T, hence approaching the upper critical field of the Nb contacts. We observe an approximate $Φ_0=h/2e$ periodicity of the QH-supercurrent as a function of the magnetic field, indicating superconducting interference in a proximitized percolative phase. These results provide a promising experimental platform to investigate the transport regime of percolative supercurrents, leveraging the flexibility of van der Waals devices.

cond-mat.mes-hall↗

arXiv2025

The Ferroelectric Superconducting Field Effect Transistor

The ferroelectric field-effect transistor (Fe-FET) is a three-terminal semiconducting device first introduced in the 1950s. Despite its potential, a significant boost in Fe-FET research occurred about ten years ago with the discovery of ferroelectricity in hafnium oxide. This material has been incorporated into electronic processes since the mid-2000s. Here, we observed ferroelectricity in a superconducting Josephson FET (Fe-JoFET) operating at cryogenic temperatures below 1 Kelvin. The Fe-JoFET was fabricated on the InAsOI platform, which features an InAs epilayer hosted by an electrical insulating substrate, using HfO2 as the gate insulator, making it a promising candidate due to its ferroelectric properties. The Fe-JoFET exhibits significant hysteresis in the switching current and normal-state resistance transfer characteristics, which depend on the range of gate voltages. This phenomenon opens a new research area exploring the interaction between ferroelectricity and superconductivity in hybrid superconducting-semiconducting systems, with potential applications in cryogenic data storage and computation. Supporting this, the Fe-JoFET was operated as a cryogenic superconducting single memory cell, exhibiting both dissipative and non-dissipative states. Its non-volatility was tested over a 24-hour measurement period. We also demonstrated that the Fe-JoFET can retain information at temperatures above the superconductor critical temperature, resulting in a temperature-fault-tolerant memory cell resistant to temperature oscillations or, in the worst case, cryostat faults.

cond-mat.supr-con↗

arXiv2025

Photonic heat amplifiers based on a disordered semiconductor

A photonic heat amplifier (PHA) designed for cryogenic operations is introduced and analyzed. This device comprises two variable-range-hopping reservoirs connected by lossless lines, which allow them to exchange heat through photonic modes. This configuration enables negative differential thermal conductance (NDTC), which can be harnessed to amplify thermal signals. To achieve this, one reservoir is maintained at a high temperature, serving as the source terminal of a thermal transistor. Concurrently, in the other one, we establish tunnel contacts to metallic reservoirs, which function as the gate and drain terminals. With this arrangement, it is possible to control the heat flux exchange between the source and drain by adjusting the gate temperature. We present two different parameter choices that yield different performances: the first emphasizes modulating the source-drain heat current, while the second focuses on the modulation of the colder temperature variable range hopping reservoir. Lastly, we present a potential design variation in which all electronic reservoirs are thermally connected through only photonic modes, allowing interactions between distant elements. The proposal of the PHA addresses the lack of thermal transistors and amplifiers in the mK range while being compatible with the rich toolbox of circuit quantum electrodynamics. It can be adapted to various applications, including sensing and developing thermal circuits and control devices at sub-Kelvin temperatures, which are relevant to quantum technologies.

cond-mat.mes-hall↗

arXiv2025

A Thermally Modulated SINIS Trasconductance Amplifier

We introduce a superconducting transconductance amplifier based on the thermal modulation of a SINIS (Superconductor-Insulator-Normal metal-Insulator-Superconductor) configuration. The device is composed of a normal metal island interfaced with two superconducting leads through tunnel barriers, establishing a voltage-biased symmetric SINIS setup. An additional NIS junction connects the island to a third superconducting lead, which serves as input. When the input voltage surpasses the superconducting gap, the resultant injection of quasiparticles increases the electronic temperature of the island, thereby modulating the SINIS current. We perform numerical analyzes of the device performance, influenced by input voltage, frequency, and bath temperature. At bath temperatures below 250 mK, the device shows a transconductance exceeding 4 mS and a current gain exceeding 45 dB. Both gain and transconductance maintain their levels up to 1 MHz, but decrease at higher frequencies, with a -3 dB cutoff around 10 MHz, and an average power dissipation of approximately 5 nW. Our simulations reveal a fully voltage-controlled, three-terminal superconducting amplifier characterized by high transconductance and gain, achieved through thermally mediated signal transduction. This architectural design presents a promising avenue for cryogenic amplification with reduced power dissipation and compatibility with current superconducting electronic systems.

cond-mat.supr-con↗

arXiv2025

Josephson Field Effect Transistors with InAs on Insulator and High Permittivity Gate Dielectrics

InAs on Insulator (InAsOI) has been recently demonstrated as a promising platform to develop hybrid semiconducting-superconducting Josephson Junctions (JJs) and Josephson Field Effect Transistors (JoFETs). The InAsOI consists of an InAs epilayer grown onto a cryogenic-electrically-insulating InAlAs metamorphic buffer, which allows the electrical decoupling of surface-exposed adjacent devices together with a high critical current density integration. The miniaturization of Si microchips has progressed significantly due to the integration of high permittivity (high-k) gate insulators, allowing an increased gate coupling with the transistor channel with consequent reduced gate operating voltages and leakages. As well as for Si-based FETs, integrating high-k gate insulators with JoFETs promises similar advantages in superconducting electronics. Here, we investigate the gate-tunable electrical properties of InAsOI-based JoFETs featuring different high-k gate insulators, namely, HfO2 and Al2O3. We found that both the ungated and gate-tunable electrical properties of the JoFETs are strongly dependent on the insulator chosen. With both dielectrics, the JoFETs can entirely suppress the switching current and increase the normal state resistance by 10-20 times using negative gate voltages. The HfO2-JoFETs exhibit improved gate-tunable electrical performance compared to those achieved with Al2O3-JoFETs, which is related to the higher permittivity of the insulator. Gate-dependent electrical properties of InAsOI-based JoFETs were evaluated in the temperature range from 50 mK to 1 K. Moreover, under the influence of an out-of-plane magnetic field, JoFETs exhibited an unconventional Fraunhofer diffraction pattern, from which an edge-peaked supercurrent density distribution was calculated.

cond-mat.supr-con↗

arXiv2025

Superconducting Quantum Interference Devices based on InSb nanoflag Josephson junctions

Planar Josephson junctions (JJs) based on InSb nanoflags have recently emerged as an intriguing platform in superconducting electronics. This letter presents the fabrication and investigation of superconducting quantum interference devices (SQUIDs) employing InSb nanoflag JJs. We provide measurements of interference patterns in both symmetric and asymmetric geometries. The interference patterns in both configurations can be modulated by a back-gate voltage, a feature well reproduced through numerical simulations. The observed behavior aligns with the skewed current-phase relations of the JJs, demonstrating significant contributions from higher harmonics. We explore the magnetic field response of the devices across a wide range of fields ($\pm 30$ mT), up to the single-junction interference regime, where a Fraunhofer-like pattern is detected. Finally, we assess the flux-to-voltage sensitivity of the SQUIDs to evaluate their performance as magnetometers. A magnetic flux noise of $S^{1/2}_Φ= 4.4 \times 10^{-6} Φ_0 / \sqrt{Hz}$ is identified, indicating potential applications in nanoscale magnetometry.

cond-mat.mes-hall↗

arXiv2025

Thermoelectric AC Josephson effect

A temperature gradient $ΔT$ across a Josephson junction induces a thermoelectric current. We predict the AC Josephson effect is activated when this current surpasses the junction's critical current. Our investigation of this phenomenon employs the time-dependent Ginzburg-Landau theory framework in proximity to the critical temperature. Our results indicate that the frequency of the AC current is approximately given by $π S Δ T / (2 Φ_0)$, where $S$ represents the Seebeck coefficient and $Φ_0$ the magnetic flux quantum and we estimate the frequency be on the range of GHz for Sn up to a THz for larger $S$ and $T_c$ materials. Furthermore, we propose two distinct experimental configurations to observe this effect.

cond-mat.supr-con↗

arXiv2025

Microscopic mechanism of electric field-induced superconductivity suppression in metallic thin films

Supercurrent field-effect transistors made from thin metallic films are a promising option for next-generation high-performance computation platforms. Despite extensive research, there is still no complete quantitative microscopic explanation for how an external DC electric field suppresses superconductivity in thin films. This study aims to provide a quantitative description of superconductivity as a function of film thickness based on Eliashberg's theory. The calculation considers the electrostatics of the electric field, its realistic penetration depth in the film, and its effect on the Cooper pair, which is described as a standard s-wave bound state according to BCS theory. The estimation suggests that an external electric field of approximately $10^8$ V/m is required to suppress superconductivity in 10-30-nm-thick films, which aligns with experimental observations. Ultimately, the study offers "materials by design" guidelines for suppressing supercurrent when an external electric field is applied to the film surface. Furthermore, the proposed framework can be easily extended to investigate the same effects for ultrathin films.

cond-mat.supr-con↗

arXiv2025

Electrostatic field-driven supercurrent suppression in ionic-gated metallic Josephson nanotransistors

Recent experiments have shown the possibility of tuning the transport properties of metallic nanosized superconductors through a gate voltage. These results renewed the longstanding debate on the interaction between electrostatic fields and superconductivity. Indeed, different works suggested competing mechanisms as the cause of the effect: an unconventional electric field-effect or quasiparticle injection. Here, we provide conclusive evidence for the electrostatic-field-driven control of the supercurrent in metallic nanosized superconductors, by realizing ionic-gated superconducting field-effect nanotransistors (ISFETs) where electron injection is impossible. Our Nb ISFETs show giant suppression of the superconducting critical current of up to 45%. Moreover, the bipolar supercurrent suppression observed in different ISFETs, together with invariant critical temperature and normal-state resistance, also excludes conventional charge accumulation/depletion. Therefore, the microscopic explanation of this effect calls upon a novel theory able to describe the nontrivial interaction of static electric fields with conventional superconductivity.

cond-mat.supr-con↗

arXiv2025

Supercurrent Diode Effect in Josephson Interferometers with Multiband Superconductors

We investigate nonreciprocal supercurrent phenomena in superconducting quantum interference devices (SQUIDs) that integrate Josephson junctions with single and multiband order parameters, which may exhibit time-reversal symmetry breaking. Our results show that the magnetic field can independently control both the amplitude and direction of supercurrent rectification, depending on the multiband characteristics of the superconductors involved. We analyze the effects of zero and antiphase (π) pairing among different bands on the development of nonreciprocal effects and find that the rectification is not influenced by π-pairing. Furthermore, we demonstrate that incorporating multiband superconductors that break time-reversal symmetry produces significant signatures in rectification. The rectification exhibits an even parity dependence on the magnetic field and the average rectification amplitude across quantum flux multiples does not equal zero. These findings indicate that magnetic flux pumping can be accomplished with time-reversal symmetry broken multiband superconductors by adjusting the magnetic field. Overall, our findings provide valuable insights for identifying and utilizing phases with broken time-reversal symmetry in multiband superconductors.

cond-mat.supr-con↗

arXiv2025

Colossal orbital-Edelstein effect in non-centrosymmetric superconductors

In superconductors that lack inversion symmetry, the flow of supercurrent can induce a non-vanishing magnetization, a phenomenon which is at the heart of non-dissipative magneto-electric effects, also known as Edelstein effects. For electrons carrying spin and orbital moments a question of fundamental relevance deals with the orbital nature of magneto-electric effects in conventional spin-singlet superconductors with Rashba coupling. Remarkably, we find that the supercurrent-induced orbital magnetization is more than one order of magnitude greater than that due to the spin, giving rise to a colossal magneto-electric effect. The induced orbital magnetization is shown to be sign tunable, with the sign change occurring for the Fermi level lying in proximity of avoiding crossing points in the Brillouin zone. In the presence of superconducting phase inhomogeneities, a modulation of the Edelstein signal on the scale of the superconducting coherence length appears, leading to domains with opposite orbital moment orientations. These hallmarks are robust to real-space self-consistent treatment of the superconducting order parameter. The orbital-dominated magneto-electric phenomena, hence, have clear-cut marks for detection both in the bulk and at the edge of the system and are expected to be a general feature of multi-orbital superconductors with inversion symmetry breaking.

cond-mat.supr-con↗

arXiv2025

Bipolar Thermoelectric Josephson Engine

Thermoelectric effects in metals are typically small due to the nearly-perfect particle-hole (PH) symmetry around their Fermi surface [1, 2]. Despite being initially considered paradoxical [3], thermophase effects [4-8] and linear thermoelectricity [9] in superconducting systems were identified only when PH symmetry is explicitly broken [10-14]. Here, we experimentally demonstrate that a superconducting tunnel junction can develop a very large bipolar thermoelectric effect in the presence of a nonlinear thermal gradient thanks to spontaneous PH symmetry breaking [15]. Our junctions show a maximum thermovoltage of $\pm150\; μ$ V at $\pm650$ mK, directly proportional to the superconducting gap. Notably, the corresponding Seebeck coefficient of $\pm300\; μ$V/K is roughly $10^5$ times larger than the one expected for a normal metal at the same temperature [16, 17]. Moreover, by integrating our junctions into a Josephson interferometer, we realize a bipolar thermoelectric Josephson engine (BTJE) [18] with phase-coherent thermopower control [19]. When connected to a generic load, the BTJE generates a phase-tunable electric power up to about 140 mW/m$^2$ at subKelvin temperatures. In addition, our device implements the prototype for a persistent thermoelectric memory cell, written or erased by current injection [20]. We expect that our findings will trigger thermoelectricity in PH symmetric systems, and will lead to a number of groundbreaking applications in superconducting electronics [21], cutting-edge quantum technologies [22-24] and sensing [25].

cond-mat.mes-hall↗

arXiv2025

Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers

Indium Arsenide is a III-V semiconductor with low electron effective mass, a small band gap, strong spin-orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good candidate for developing superconducting solid-state quantum devices. Here, we report the epitaxial growth of very thin InAs layers with thicknesses ranging from 12.5 nm to 500 nm grown by Molecular Beam Epitaxy on InxAl1-xAs metamorphic buffers. Differently than InAs substrates, these buffers have the advantage of being insulating at cryogenic temperatures, which allows for multiple device operations on the same wafer and thus making the approach scalable. The structural properties of the InAs layers were investigated by high-resolution X-ray diffraction, demonstrating the high crystal quality of the InAs layers. Furthermore, their transport properties, such as total and sheet carrier concentration, sheet resistance, and carrier mobility, were measured in the van der Pauw configuration at room temperature. A simple conduction model was employed to quantify the surface, bulk, and interface contributions to the overall carrier concentration and mobility.

cond-mat.mes-hall↗

arXiv2025

Cryogenic Behavior of High-Permittivity Gate Dielectrics: The Impact of the Atomic Layer Deposition Temperature and the Lithographic Patterning Method

Dielectrics featuring a high relative permittivity, i.e., high-k dielectrics, have become the standard insulators in gate architectures, enhancing the electrical performance of both room temperature and cryogenic electronics. This study delves into the cryogenic (3 K) performance of high-k dielectrics commonly used as gate insulators. We fabricated Al2O3 and HfO2 layers via Atomic Layer Deposition (ALD) and we extrapolated relative permittivity (k) and dielectric strength (E_BD) from AC (100 Hz to 100 kHz) and DC measurements on metal-insulator-metal capacitors. Our findings reveal a strong dependence of HfO2 cryogenic performance on the ALD growth temperature, while the latter shows a negligible impact on Al2O3. We estimated a ~9 % and ~14 % reduction of the relative permittivity of HfO2 and Al2O3, respectively, from 300 K to 3 K. Additionally, we designed and fabricated Al2O3/HfO2 bilayers and we checked their properties at cryogenic temperatures. The study also investigates the impact of the patterning method, namely, UV or electron-beam lithography (acceleration voltage of 10, 20, or 30 kV), on the high-k dielectric properties.

cond-mat.mtrl-sci↗

arXiv2025

Estimation of the FR4 Microwave Dielectric Properties at Cryogenic Temperature for Quantum-Chip-Interface PCBs Design

Ad-hoc interface PCBs (Printed Circuit Boards) are today the standard connection between cryogenic cabling and quantum chips. Besides low-loss and low-temperature-dependent-dielectric-permittivity materials, Flame Resistance n.4 (FR4) provides a low-cost solution for fabrication of cryogenic PCBs. Here, we report on an effective way to evaluate the dielectric performance of a FR4 laminate used as substrate for cryogenic microwave PCBs. We designed a coplanar waveguide λ/2 open-circuit series resonator, and we fabricated the PCB using a low-cost manufacturing process, obtaining in-plane geometric features with maximum variations of 50-100 um compared to the PCB design. Such a geometry allows to exploit the resonance peak of the resonator to measure the variation of the complex permittivity as a function of the temperature. The resonance peak frequency was used to estimate the real permittivity, achieving a sensitivity of -470 MHz and a resolution of 1.2x10^-2. Similarly, the resonance peak magnitude was involved in the extrapolation of the loss tangent, reaching a sensitivity of ~-337 dB and a resolution of 1.6x^10-4. For the FR4 laminate used, we estimated a 9 % reduction of the real permittivity and a 70 % reduction of the loss tangent in the temperature range from 300 to 4 K. The proposed approach can be immediately extended to the detection of cryogenic temperature-dependent dielectric performance of any kind of substrate.

physics.ins-det↗

arXiv2025

InAs on Insulator: A New Platform for Cryogenic Hybrid Superconducting Electronics

Superconducting circuits based on hybrid InAs Josephson Junctions (JJs) play a starring role in the design of fast and ultra-low power consumption solid-state quantum electronics and exploring novel physical phenomena. Conventionally, 3D substrates, 2D quantum wells (QWs), and 1D nanowires (NWs) made of InAs are employed to create superconducting circuits with hybrid JJs. Each platform has its advantages and disadvantages. Here, we proposed the InAs-on-insulator (InAsOI) as a groundbreaking platform for developing superconducting electronics. An epilayer of semiconducting InAs with different electron densities was grown onto an InAlAs metamorphic buffer layer, efficiently used as a cryogenic insulator to decouple adjacent devices electrically. JJs with various lengths and widths were fabricated employing Al as a superconductor and InAs with different electron densities. We achieved a switching current density of 7.3 uA/um, a critical voltage of 50-to-80 uV, and a critical temperature equal to that of the superconductor used. For all the JJs, the switching current follows a characteristic Fraunhofer pattern with an out-of-plane magnetic field. These achievements enable the use of InAsOI to design and fabricate surface-exposed Josephson Field Effect Transistors with high critical current densities and superior gating properties.

cond-mat.supr-con↗

arXiv2025

Back-action supercurrent diodes

Back-action refers to a response that retro-acts on a system to tailor its properties with respect to an external stimulus. This effect is at the heart of many electronic devices such as amplifiers, oscillators, and sensors. Here, we demonstrate that back-action can be exploited to achieve non-reciprocal transport in superconducting circuits. In our devices, dissipationless current flows in one direction whereas dissipative transport occurs in the opposite direction. Supercurrent diodes presented so far rely on magnetic elements or vortices to mediate charge transport or external magnetic fields to break time-reversal symmetry. Back-action solely turns a conventional reciprocal superconducting weak link with no asymmetry between the current bias directions into a rectifier, where the critical current amplitude depends on the bias sign. The self-interaction of the supercurrent stems from the gate tunability of the critical current in metallic and semiconducting systems, which promotes nearly ideal magnetic field-free rectification with selectable polarity.

cond-mat.mes-hall↗