The Ferroelectric Superconducting Field Effect Transistor

Alessandro Paghi; Laura Borgongino; Elia Strambini; Giorgio De Simoni; Lucia Sorba; Francesco Giazotto

Home/Archive/arXiv

arXiv · 2507.04773

The Ferroelectric Superconducting Field Effect Transistor

Alessandro Paghi·Laura Borgongino·Elia Strambini·Giorgio De Simoni·Lucia Sorba·Francesco Giazotto

View original source ↗Read source document ↗Export metadata ↓

Abstract

The ferroelectric field-effect transistor (Fe-FET) is a three-terminal semiconducting device first introduced in the 1950s. Despite its potential, a significant boost in Fe-FET research occurred about ten years ago with the discovery of ferroelectricity in hafnium oxide. This material has been incorporated into electronic processes since the mid-2000s. Here, we observed ferroelectricity in a superconducting Josephson FET (Fe-JoFET) operating at cryogenic temperatures below 1 Kelvin. The Fe-JoFET was fabricated on the InAsOI platform, which features an InAs epilayer hosted by an electrical insulating substrate, using HfO2 as the gate insulator, making it a promising candidate due to its ferroelectric properties. The Fe-JoFET exhibits significant hysteresis in the switching current and normal-state resistance transfer characteristics, which depend on the range of gate voltages. This phenomenon opens a new research area exploring the interaction between ferroelectricity and superconductivity in hybrid superconducting-semiconducting systems, with potential applications in cryogenic data storage and computation. Supporting this, the Fe-JoFET was operated as a cryogenic superconducting single memory cell, exhibiting both dissipative and non-dissipative states. Its non-volatility was tested over a 24-hour measurement period. We also demonstrated that the Fe-JoFET can retain information at temperatures above the superconductor critical temperature, resulting in a temperature-fault-tolerant memory cell resistant to temperature oscillations or, in the worst case, cryostat faults.

Explore related subjects

cond-mat.supr-con cond-mat.mes-hall cond-mat.mtrl-sci

Keep this discovery

Explore connections, maps & timelines

BibTeX RIS

Alessandro Paghi, Laura Borgongino, Elia Strambini, Giorgio De Simoni, Lucia Sorba, Francesco Giazotto. 2025-07-07. The Ferroelectric Superconducting Field Effect Transistor. https://arxiv.org/abs/2507.04773

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Out-of-equilibrium relaxation dynamics of the superconducting order parameter in CsV$_3$Sb$_5$

The application of a time-varying strain field drives a superconducting order parameter out of equilibrium. How the order parameter relaxes back to equilibrium depends both on the structure of the superconducting gap and on the nature of quasiparticle scattering. We report the discovery of an ultrasonic attenuation peak inside the superconducting state of the kagome superconductor CsV$_3$Sb$_5$. This peak is the natural consequence of the order parameter relaxation time matching the ultrasonic drive frequency near $T_{\rm c}$. From the measured frequency dependence of the peak, we extract a microscopic scattering time of $\tau_N = 25$ ps. This timescale is two orders of magnitude longer than the elastic scattering time as determined by resistivity measurements, but is comparable to the inelastic scattering time determined by thermal transport. Within the conventional framework of order-parameter relaxation, this implies that elastic scattering is ineffective at relaxing the superconducting condensate, consistent with a sign-preserving $s$-wave state obeying Anderson's theorem.

cond-mat.supr-con↗

arXiv2026

Eight-unit-cell electronic modulations in cuprates originating from local molecular orbitals

The pair density wave (PDW) state with eight-unit-cell (8a0) periodicity has been widely regarded as the primary order in cuprates, yet its existence and origin remain subjects of intense debate. Using spectroscopic imaging scanning tunneling microscopy, we observe spatial modulations of the electronic states with approximately 8a0 periodicity in both the superconducting and insulating regimes of hole-doped Ca2CuO2Cl2 cuprate. We find that the 8a0 spatial patterns are generated by the formation of molecular orbitals by doped holes, which organize into 4a0*4a0 plaquettes as the basic unit. Our results identify the 4a0 molecular orbital as the fundamental electronic building block in cuprates, while the 8a0 PDW represents a spatial subharmonic that emerges at sufficiently high doping.

cond-mat.supr-con↗

arXiv2026

Record-Breaking Elemental Superconductivity in Tetralayer Kagome Borophene

Superconductivity above the liquid-nitrogen temperature remains rare in two-dimensional elemental crystals, where strong covalent bonding often yields high phonon frequencies but insufficient electron-phonon coupling. Here, using first-principles calculations and fully anisotropic Migdal-Eliashberg theory, we predict tetralayer kagome borophene (TKB) stabilized by ABAB covalent stacking, as a liquid-nitrogen-temperature elemental superconductor. With a predicted critical temperature of 102 K, TKB sets a record-high value among previously reported elemental superconductors. Unlike known high-Tc boron-based superconductors dominated by in-plane sigma-bonding states and high-frequency in-plane B-B stretching modes, TKB realizes an out-of-plane s-pz-bonding-mediated pairing mechanism, in which interlayer s-pz bonding states at the Fermi level are strongly coupled to low-frequency out-of-plane vibrations of boron atoms. These results reveal a distinct out-of-plane pairing channel in multilayer borophene and establish covalent stacking engineering as a potential route for high-Tc superconductivity in two-dimensional materials.

cond-mat.supr-con↗