arXiv subjects

Francisco Domínguez-Adame

Publications and source records attributed to Francisco Domínguez-Adame.

29 records · Page 2Linked to original sources

arXiv2020

Many-impurity scattering on the surface of a topological insulator

We theoretically address the impact of a random distribution of non-magnetic impurities on the surface states formed at the interface between a trivial and a topological insulator. The interaction of electrons with the impurities is accounted for by a separable pseudo-potential method that allows us to obtain closed expressions for the density of states. Spectral properties of surface states are assessed by means of the Green's function averaged over disorder realizations. For comparison purposes, the configurationally averaged Green's function is calculated by means of two different self-consistent methods, namely the self-consistent Born approximation (SCBA) and the coherent potential approximation (CPA). The latter is often regarded as the best single-site theory for the study of the spectral properties of disordered systems. However, although a large number of works employ the SCBA for the analysis of many-impurity scattering on the surface of a topological insulator, CPA studies of the same problem are scarce in the literature. In this work we find that the SCBA overestimates the impact of the random distribution of impurities on the spectral properties of surface states compared to the CPA predictions. The difference is more pronounced when increasing the magnitude of the disorder.

cond-mat.mes-hall↗

arXiv2020

Excitons, trions and Rydberg states in monolayer MoS2 revealed by low temperature photocurrent spectroscopy

We investigate excitonic transitions in a h-BN encapsulated monolayer $\textrm{MoS}_2$ phototransistor by photocurrent spectroscopy at cryogenic temperature (T = 5 K). The spectra presents excitonic peaks with linewidths as low as 8 meV, one order of magnitude lower than in earlier photocurrent spectroscopy measurements. We observe four spectral features corresponding to the ground states of neutral excitons ($\textrm{X}_{\textrm{1s}}^\textrm{A}$ and $\textrm{X}_{\textrm{1s}}^\textrm{B}$) and charged trions ($\textrm{T}^\textrm{A}$ and $\textrm{T}^\textrm{B}$) as well as up to eight additional spectral lines at energies above the $\textrm{X}_{\textrm{1s}}^\textrm{B}$ transition, which we attribute to the Rydberg series of excited states of $\textrm{X}^\textrm{A}$ and $\textrm{X}^\textrm{B}$. The relative intensities of the different spectral features can be tuned by the applied gate and drain-source voltages, with trions and Rydberg excited states becoming more prominent at large gate voltages. Using an effective-mass theory for excitons in two-dimensional transition-metal dichalcogenides we are able to accurately fit the measured spectral lines and unambiguously associate them with their corresponding Rydberg states. The fit also allows us to determine the quasiparticle bandgap and spin-orbit splitting of monolayer $\textrm{MoS}_2$, as well as the exciton binding energies of $\textrm{X}^\textrm{A}$ and $\textrm{X}^\textrm{B}$.

cond-mat.mtrl-sci↗

arXiv2020

Understanding the UV luminescence of zinc germanate: The role of native defects

Achieving efficient and stable ultraviolet emission is a challenging goal in optoelectronic devices. Herein, we investigate the UV luminescence of zinc germanate Zn2GeO4 microwires by means of photoluminescence measurements as a function of temperature and excitation conditions. The emitted UV light is composed of two bands (a broad one and a narrow one) associated with the native defects structure. In addition, with the aid of density functional theory (DFT) calculations, the energy positions of the electronic levels related to native defects in Zn2GeO4 have been calculated. In particular, our results support that zinc interstitials are the responsible for the narrow UV band, which is, in turn, split into two components with different temperature dependence behaviour. The origin of the two components is explained on the basis of the particular location of Zn_i in the lattice and agrees with DFT calculations. Furthermore, a kinetic luminescence model is proposed to ascertain the temperature evolution of this UV emission. These results pave the way to exploit defect engineering in achieving functional optoelectronic devices to operate in the UV region.

cond-mat.mtrl-sci↗

arXiv2019

Electric field manipulation of surface states in topological semimetals

We investigate the consequences of applying electric fields perpendicularly to thin films of topological semimetals. In particular, we consider Weyl and Dirac semimetals in a configuration such that their surface Fermi arcs lie on opposite edges of the films. We develop an analytical approach based on perturbation theory and a single-surface approximation and we compare our analytical results with numerical calculations. The effect of the electric field on the dispersion is twofold: it shifts the dispersion relation and renormalizes the Fermi velocity, which would, in turn, have direct effects on quantum transport measurements. Additionally, it modifies the spatial decay properties of surface states which will impact the connection of the Fermi arcs in opposite sides of a narrow thin film.

cond-mat.mes-hall↗

arXiv2019

Quantum nanoconstrictions fabricated by cryo-etching in encapsulated graphene

More than a decade after the discovery of graphene, ballistic transport in nanostructures based on this intriguing material still represents a challenging field of research in two-dimensional electronics. The presence of rough edges in nanostructures based on this material prevents the appearance of truly ballistic electron transport as theo\-re\-tically predicted and, therefore, not well-developed plateaus of conductance have been revealed to date. In this work we report on a novel implementation of the cryo-etching method, which enabled us to fabricate graphene nanoconstrictions encapsulated between hexagonal boron nitride thin films with unprecedented control of the structure edges. High quality smooth nanometer-rough edges are characterized by atomic force microscopy and a clear correlation between low roughness and the existence of well-developed quantized conductance steps with the concomitant occurrence of ballistic transport is found at low temperature. In par\-ti\-cu\-lar, we come upon exact 2$e^{2}/h$ quantization steps of conductance at zero magnetic field due to size quantization, as it has been theoretically predicted for truly ballistic electron transport through graphene nanoconstrictions.

cond-mat.mes-hall↗

arXiv2018

Nanoelectronic devices based on twisted graphene nanoribbons

We argue that twisted graphene nanoribbons subjected to a transverse electric field can operate as a variety of nanoelectronic devices, such as tunable tunnel diodes with current-voltage characteristics controlled by the transverse field. Using the density-functional tight-binding method to address the effects of mechanical strain induced by the twisting, we show that the electronic transport properties remain almost unaffected by the strain in relevant cases and propose a simplified tight-binding model which gives reliable results. The transverse electric field creates a periodic electrostatic potential along the nanoribbon, resulting in a formation of a superlattice-like energy band structure and giving rise to different remarkable electronic properties. We demonstrate that if the nanoribbon geometry and operating point are selected appropriately, the system can function as a field-effect transistor or a device with nonlinear current-voltage characteristic manifesting one or several regions of negative differential resistance. The latter opens possibilities for applications such as an active element of nanoscale amplifiers, generators, and new class of devices with multiple logic states.

cond-mat.mes-hall↗

arXiv2013

Electron pairing in periodic potentials under an external electric field

We study the semiclassical dynamics of interacting electrons in a biased crystal lattice. A complex dynamical scenario emerges from the interplay between the Coulomb and the external electric fields. When the electrons are far apart, the Coulomb potential may be small compared to the external potential and the electrons oscillate with effective Bloch frequencies, determined by the local electric field. In the opposite case, nearby electrons either separate or form a bound pair, depending on the initial energy compared to the band width. The pair due to the Coulomb field is stable even in the absence of the external field.

cond-mat.str-el↗

arXiv2012

Graphene nanoring as a tunable source of polarized electrons

We propose a novel spin filter based on a graphene nanoring fabricated above a ferromagnetic strip. The exchange interaction between the magnetic moments of the ions in the ferromagnet and the electron spin splits the electronic states, and gives rise to spin polarization of the conductance and the total electric current. We demonstrate that both the current and its polarization can be controlled by a side-gate voltage. This opens the possibility to use the proposed device as a tunable source of polarized electrons.

cond-mat.mes-hall↗

arXiv2011

Stability and decay of Bloch oscillations in presence of time-dependent nonlinearity

We consider Bloch oscillations of Bose-Einstein condensates in presence of a time-modulated s-wave scattering length. Generically, interaction leads to dephasing and decay of the wave packet. Based on a cyclic-time argument, we find---additionally to the linear Bloch oscillation and a rigid soliton solution---an infinite family of modulations that lead to a periodic time evolution of the wave packet. In order to quantitatively describe the dynamics of Bloch oscillations in presence of time-modulated interactions, we employ two complementary methods: collective-coordinates and the linear stability analysis of an extended wave packet. We provide instructive examples and address the question of robustness against external perturbations.

cond-mat.quant-gas↗

arXiv2000

Lattice model for kinetics and grain size distribution in crystallization

We propose a simple, versatile and fast computational model tounderstand the deviations from the well-known Kolmogorov-Johnson-Mehl-Avrami kinetic theoryfound in metal recrystallization and amorphous semiconductor crystallization. Our model describes in detail the kinetics of the transformation and the grain size distribution of the product material, and is in good agreement with the available experimental data. Other morphological and kinetic features amenable of experimental observation are outlined, suggesting new directions for further validation of the model.

cond-mat↗

arXiv1998

Anomalous scaling in a non local growth model in the Kardar-Parisi-Zhang universality class

We study the interface dynamics of a discrete model to quantitatively describe electrochemical deposition experiments. Extensive numerical simulations indicate that the interface dynamics is unstable at early times, but asymptotically displays the scaling of the Kardar-Parisi-Zhang universality class. During the time interval in which the surface is unstable, its power spectrum is anomalous; hence the behaviors at length scales smaller than or comparable with the system size are described by different roughness exponents. These results are expected to apply to a wide range of electrochemical deposition experiments.

cond-mat.stat-mech↗