arXiv subjects

Franz-Josef Haug

Publications and source records attributed to Franz-Josef Haug.

4 recordsLinked to original sources

arXiv2026

Accelerated development of amorphous InZnO thin films as transparent conductive Cu diffusion barriers

In light of the increasing supply chain concerns regarding silver for solar cell metallization, the replacement of the silver contacts by copper is desirable. As copper diffuses readily in silicon, deposition of an additional diffusion barrier to protect the respective absorber material stacks is required. We investigate multifunctional layers of transparent conductive oxides (TCOs) from the In-Zn-O system to serve as front electrode and Cu diffusion barrier coating, focusing on purely amorphous layers without grain boundaries to impede copper diffusion. We employ a 2D combinatorial approach to simultaneously screen the Zn/(In+Zn) ratio and the oxygen content in a single materials library deposited by magnetron sputtering without intentional substrate heating. Cu diffusion barrier performance was evaluated by depositing Cu on top of intentionally ultrathin In-Zn-O libraries of 7 nm on silicon wafers and annealing them at temperatures of 200-450{\deg}C. Both the formation of copper silicides, as well as the silicon photoluminescence signal were monitored. The first was detected only after the crystallization of the In-Zn-O films and required annealing temperatures of 450{\deg}C and above. Even for extended dwell times of 20 h at a relevant process temperature of 200{\deg}C, we find no evidence of Cu ingress for most of our fabricated In-Zn-O compositions, whereas Si/Cu stacks without In-Zn-O barriers showed a reduction of their photo-luminescence intensity already after less than 1 h. These results suggest thin amorphous In-Zn-O films with an optimal Zn/(In+Zn) ratio of ~0.12 and intermediate oxygen deficiency as effective transparent conductive Cu diffusion barriers for solar cell applications.

cond-mat.mtrl-sci↗

arXiv2019

Analysis of hydrogen distribution and migration in fired passivating contacts (FPC)

In this work, the hydrogenation mechanism of fired passivating contacts (FPC) based on c-Si/SiO$_{x}$/nc-SiC$_{x}$(p) stacks was investigated, by correlating the passivation and local re-distribution of hydrogen. Secondary ion mass spectroscopy (SIMS) depth profiling was used to assess the hydrogen (/deuterium) content. The SIMS profiles show that hydrogen almost completely effuses out of the SiC$_{x}$(p) during firing, but can be re-introduced by hydrogenation via forming gas anneal (FGA) or by release from a hydrogen containing layer such as SiN$_{x}$:H. A pile-up of H at the c-Si/SiO$_{x}$ interface was observed and identified as a key element in the FPC's passivation mechanism. Moreover, the samples hydrogenated with SiN$_{x}$:H exhibited higher H content compared to those treated by FGA, resulting in higher iV$_{OC}$ values. Further investigations revealed that the doping of the SiC$_{x}$ layer does not affect the amount of interfacial defects passivated by the hydrogenation process presented in this work. Eventually, an effect of the oxide's nature on passivation quality is evidenced. iV$_{OC}$ values of up to 706 mV and 720 mV were reached with FPC test structures using chemical and UV-O$_{3}$ tunneling oxides, respectively, and up to 739 mV using a reference passivation sample featuring a ~25 nm thick thermal oxide.

physics.app-ph↗

arXiv2013

Angular behavior of the absorption limit in thin film silicon solar cells

We investigate the angular behavior of the upper bound of absorption provided by the guided modes in thin film solar cells. We show that the 4n^2 limit can be potentially exceeded in a wide angular and wavelength range using two-dimensional periodic thin film structures. Two models are used to estimate the absorption enhancement; in the first one, we apply the periodicity condition along the thickness of the thin film structure but in the second one, we consider imperfect confinement of the wave to the device. To extract the guided modes, we use an automatized procedure which is established in this work. Through examples, we show that from the optical point of view, thin film structures have a high potential to be improved by changing their shape. Also, we discuss the nature of different optical resonances which can be potentially used to enhance light trapping in the solar cell. We investigate the two different polarization directions for one-dimensional gratings and we show that the transverse magnetic polarization can provide higher values of absorption enhancement. We also propose a way to reduce the angular dependence of the solar cell efficiency by the appropriate choice of periodic pattern. Finally, to get more practical values for the absorption enhancement, we consider the effect of parasitic loss which can significantly reduce the enhancement factor.

physics.optics↗

arXiv2012

Light trapping in solar cells at the extreme coupling limit

We calculate the maximal absorption enhancement obtainable by guided mode excitation in a weakly absorbing dielectric slab over wide wavelength ranges. The slab mimics thin film silicon solar cells in the low absorption regime. We consider simultaneously wavelength-scale periodicity of the texture, small thickness of the film, modal properties of the guided waves and their confinement to the film. Also we investigate the effect of the incident angle on the absorption enhancement. Our calculations provide tighter bounds for the absorption enhancement but still significant improvement is possible. Our explanation of the absorption enhancement can help better exploitation of the guided modes in thin film devices.

physics.optics↗