Accelerated development of amorphous InZnO thin films as transparent conductive Cu diffusion barriers

Abstract

In light of the increasing supply chain concerns regarding silver for solar cell metallization, the replacement of the silver contacts by copper is desirable. As copper diffuses readily in silicon, deposition of an additional diffusion barrier to protect the respective absorber material stacks is required. We investigate multifunctional layers of transparent conductive oxides (TCOs) from the In-Zn-O system to serve as front electrode and Cu diffusion barrier coating, focusing on purely amorphous layers without grain boundaries to impede copper diffusion. We employ a 2D combinatorial approach to simultaneously screen the Zn/(In+Zn) ratio and the oxygen content in a single materials library deposited by magnetron sputtering without intentional substrate heating. Cu diffusion barrier performance was evaluated by depositing Cu on top of intentionally ultrathin In-Zn-O libraries of 7 nm on silicon wafers and annealing them at temperatures of 200-450{\deg}C. Both the formation of copper silicides, as well as the silicon photoluminescence signal were monitored. The first was detected only after the crystallization of the In-Zn-O films and required annealing temperatures of 450{\deg}C and above. Even for extended dwell times of 20 h at a relevant process temperature of 200{\deg}C, we find no evidence of Cu ingress for most of our fabricated In-Zn-O compositions, whereas Si/Cu stacks without In-Zn-O barriers showed a reduction of their photo-luminescence intensity already after less than 1 h. These results suggest thin amorphous In-Zn-O films with an optimal Zn/(In+Zn) ratio of ~0.12 and intermediate oxygen deficiency as effective transparent conductive Cu diffusion barriers for solar cell applications.