arXiv subjects

G. -J. Wang

Publications and source records attributed to G. -J. Wang.

18 recordsLinked to original sources

arXiv2025

Massive stars exploding in a He-rich circumstellar medium. XI. Diverse evolution of five Ibn SNe 2020nxt, 2020taz, 2021bbv, 2023utc and 2024aej

We present the photometric and spectroscopic analysis of five Type Ibn supernovae (SNe): SN 2020nxt, SN 2020taz, SN 2021bbv, SN 2023utc, and SN 2024aej. These events share key observational features and belong to a family of objects similar to the prototypical Type Ibn SN 2006jc. The SNe exhibit rise times of approximately 10 days and peak absolute magnitudes ranging from $-$16.5 to $-$19 mag. Notably, SN 2023utc is the faintest Type Ibn supernova discovered to date, with an exceptionally low r-band absolute magnitude of $-16.4$ mag. The pseudo-bolometric light curves peak at $(1-10) \times 10^{42}$ erg s$^{-1}$, with total radiated energies on the order of $(1-10) \times 10^{48}$ erg. Spectroscopically, these SNe display relatively slow spectral evolution; the early spectra are characterised by a hot blue continuum and prominent He I emission lines. Early spectra show blackbody temperatures exceeding $10000~\mathrm{K}$, with a subsequent decline in temperature during later phases. Narrow He I lines, indicative of unshocked circumstellar material (CSM), show velocities of approximately $1000~\mathrm{km~s^{-1}}$. The spectra suggest that the progenitors of these SNe underwent significant mass loss prior to the explosion, resulting in a He-rich CSM. Light curve modelling yields estimates for the ejecta mass ($M_{\rm ej}$) in the range $1-3~M_{\odot}$, with kinetic energies ($E_{\rm Kin}$) of $(0.1-1) \times 10^{50}$ erg. The inferred CSM mass ranges from $0.2$ to $1~M_{\odot}$. These findings are consistent with expectations for core-collapse events arising from relatively massive, envelope-stripped progenitors.

astro-ph.HE↗

arXiv2024

Exploring Charge Transport Dynamics in a Cryogenic P-Type Germanium Detector

This study explores the dynamics of charge transport within a cryogenic P-type Ge particle detector, fabricated from a crystal cultivated at the University of South Dakota (USD). By subjecting the detector to cryogenic temperatures and an Am-241 source, we observe evolving charge dynamics and the emergence of cluster dipole states, leading to the impact ionization process at 40 mK. Our analysis focuses on crucial parameters: the zero-field cross-section of cluster dipole states and the binding energy of these states. For the Ge detector in our investigation, the zero-field cross-section of cluster dipole states is determined to be $8.45 \times 10^{-11}\pm 4.22\times 10^{-12}~cm^2$. Examination of the binding energy associated with cluster dipole states, formed by charge trapping onto dipole states during the freeze-out process, reveals a value of $0.034 \pm 0.0017$ meV. These findings shed light on the intricate charge states influenced by the interplay of temperature and electric field, with potential implications for the sensitivity in detecting low-mass dark matter.

physics.ins-det↗

arXiv2023

Observation of Time-Dependent Internal Charge Amplification in a Planar Germanium Detector at Cryogenic Temperature

For the first time, time-dependent internal charge amplification through impact ionization has been observed in a planar germanium (Ge) detector operated at cryogenic temperature. In a time period of 30 and 45 minutes after applying a bias voltage, the charge energy corresponding to a baseline of the 59.54 keV $γ$ rays from a $^{241}$Am source is amplified for a short period of time and then decreases back to the baseline. The amplification of charge energy depends strongly on the applied positive bias voltage with drifting holes across the detector. No such phenomenon is visible with drifting electrons across the detector. We find that the observed charge amplification is dictated by the impact ionization of charged states, which has a strong correlation with impurity level and applied electric field. We analyze the dominant physics mechanisms that are responsible for the creation and the impact ionization of charged states. Our analysis suggests that the appropriate level of impurity in a Ge detector can enhance charge yield through the impact ionization of charged states to achieve extremely low-energy detection threshold ($<$ 10 meV) for MeV-scale dark matter searches if the charge amplification can be stabilized.

physics.ins-det↗

arXiv2022

Evidence of cluster dipole states in germanium detectors operating at temperatures below 10 K

By studying charge trapping in germanium (Ge) detectors operating at temperatures below 10 K, we demonstrate for the first time that the formation of cluster dipole states from residual impurities is responsible for charge trapping. Two planar detectors with different impurity levels and types are used in this study. When drifting the localized charge carriers created by $α$ particles from the top surface across a detector under a lower bias voltage, significant charge trapping is observed when compared to operating at a higher bias voltage. The amount of charge trapping shows a strong dependence on the type of charge carriers. Electrons are trapped more than holes in a p-type detector while holes are trapped more than electrons in a n-type detector. When both electrons and holes are drifted simultaneously using the widespread charge carriers created by $γ$ rays inside the detector, the amount of charge trapping shows no dependence on the polarity of bias voltage.

physics.ins-det↗

arXiv2021

Development of Planar P-type Point Contact Germanium Detectors for Low-Mass Dark Matter Searches

The detection of low-energy deposition in the range of sub-eV through ionization using germanium (Ge) with a bandgap of $\sim$0.7 eV requires internal amplification of charge signal. This can be achieved through high electric field which accelerates charge carriers to generate more charge carriers. The minimum electric field required to generate internal charge amplification is derived for different temperatures. A point contact Ge detector provides extremely high electric field in proximity to the point contact. We show the development of a planar point contact detector and its performance. The field distribution is calculated for this planar point contact detector. We demonstrate the required electric field can be achieved with a point contact detector.

physics.ins-det↗

arXiv2021

Intermediate-luminosity red transients: Spectrophotometric properties and connection to electron-capture supernova explosions

We present the spectroscopic and photometric study of five intermediate-luminosity red transients (ILRTs), namely AT 2010dn, AT 2012jc, AT 2013la, AT 2013lb, and AT 2018aes. They share common observational properties and belong to a family of objects similar to the prototypical ILRT SN~2008S. These events have a rise time that is less than 15 days and absolute peak magnitudes of between $-11.5$ and $-14.5$ mag. Their pseudo-bolometric light curves peak in the range $0.5$ - $9.0 \times10^{40}~\mathrm{erg~s}^{-1}$ and their total radiated energies are on the order of (0.3 - 3) $\times$~10$^{47}$~erg. After maximum brightness, the light curves show a monotonic decline or a plateau, resembling those of faint supernovae IIL or IIP, respectively. At late phases, the light curves flatten, roughly following the slope of the $^{56}$Co decay. If the late-time power source is indeed radioactive decay, these transients produce $^{56}$Ni masses on the order of $10^{-4}$ to $10^{-3}$~\msun. The spectral energy distribution of our ILRT sample, extending from the optical to the mid-infrared (MIR) domain, reveals a clear IR excess soon after explosion and non-negligible MIR emission at very late phases. The spectra show prominent H lines in emission with a typical velocity of a few hundred km~s$^{-1}$, along with Ca~II features. In particular, the [Ca~II] $λ$7291,7324 doublet is visible at all times, which is a characteristic feature for this family of transients. The identified progenitor of SN~2008S, which is luminous in archival Spitzer MIR images, suggests an intermediate-mass precursor star embedded in a dusty cocoon. We propose the explosion of a super-asymptotic giant branch star forming an electron-capture supernova as a plausible explanation for these events.

astro-ph.HE↗

arXiv2021

Implication of the Temperature-Dependent Charge Barrier Height of Amorphous Germanium Contact Detector in Searching for Rare Event Physics

The exploration of germanium (Ge) detectors with amorphous Ge (a-Ge) contacts has drawn attention to the searches for rare-event physics such as dark matter and neutrinoless double-beta decay. The charge barrier height (CBH) of the a-Ge contacts deposited on the detector surface is crucial to suppress the leakage current of the detector in order to achieve la ow-energy detection threshold and high-energy resolution. The temperature-dependent CBH of a-Ge contacts for three Ge detectors is analyzed to study the bulk leakage current (BLC) characteristics. The detectors were fabricated at the University of South Dakota using homegrown crystals. The CBH is determined from the BLC when the detectors are operated in the reverse bias mode with a guard-ring structure, which separates the BLC from the surface leakage current (SLC). The results show that CBH is temperature dependent. The direct relation of the CBH variation to temperature is related to the barrier inhomogeneities created on the interface of a-Ge and crystalline Ge. The inhomogeneities that occur at the interface were analyzed using the Gaussian distribution model for three detectors. The CBH of a-Ge contact is projected to zero temperature. The implication of the CBH at zero temperature is discussed for Ge detectors with a-Ge contacts in searching for rare-event physics.

physics.ins-det↗

arXiv2020

Characterization of High-Purity Germanium Detectors with Amorphous Germanium Contacts in Cryogenic Liquids

For the first time, planar high-purity germanium detectors with thin amorphous germanium contacts were successfully operated directly in liquid nitrogen and liquid argon in a cryostat at the Max-Planck-Institut fuer Physics in Munich. The detectors were fabricated at the Lawrence Berkeley National Laboratory and the University of South Dakota, using crystals grown at the University of South Dakota. They survived long-distance transportation and multiple thermal cycles in both cryogenic liquids and showed reasonable leakage currents and spectroscopic performance. Also discussed are the pros and cons of using thin amorphous semiconductor materials as an alternative contact technology in large-scale germanium experiments searching for physics beyond the Standard Model.

physics.ins-det↗

arXiv2020

Characterization of High-Purity Germanium (Ge) Crystals for Developing Novel Ge Detectors

High-purity germanium (HPGe) crystals are required to be well-characterized before being fabricated into Ge detectors. The characterization of HPGe crystals is often performed with the Hall Effect system, which measures the carrier concentration, the Hall mobility, and the electrical resistivity. The reported values have a strong dependence on the size of the ohmic contacts and the geometry of the samples used in conducting the Hall Effect measurements. We conduct a systematic study using four samples cut from the same location in a HPGe crystal made into different sized ohmic contacts or different geometries to study the variation of the measured parameters from the Hall Effect system. The results are compared to the C-V measurements provided by the Ge detector made from the same crystal. We report the systematic errors involved with the Hall Effect system and find a reliable technique that minimizes the systematic error to be only a few percent from the Hall Effect measurements.

physics.ins-det↗

arXiv2020

Impact of Charge Trapping on the Energy Resolution of Ge Detectors for Rare-Event Physics Searches

Charge trapping degrades the energy resolution of germanium (Ge) detectors, which require to have increased experimental sensitivity in searching for dark matter and neutrinoless double-beta decay. We investigate the charge trapping processes utilizing nine planar detectors fabricated from USD-grown crystals with well-known net impurity levels. The charge collection efficiency as a function of charge trapping length is derived from the Shockley-Ramo theorem. Furthermore, we develop a model that correlates the energy resolution with the charge collection efficiency. This model is then applied to the experimental data. As a result, charge collection efficiency and charge trapping length are determined accordingly. Utilizing the Lax model (further developed by CDMS collaborators), the absolute impurity levels are determined for nine detectors. The knowledge of these parameters when combined with other traits such as the Fano factor serve as a reliable indicator of the intrinsic nature of charge trapping within the crystals. We demonstrate that electron trapping is more severe than hole trapping in a p-type detector and the charge collection efficiency depends on the absolute impurity level of the Ge crystal when an adequate bias voltage is applied to the detector. Negligible charge trapping is found when the absolute impurity level is less than 1.0$\times$10$^{11}/$cm$^{3}$ for collecting electrons and 2.0$\times$10$^{11}/$cm$^{3}$ for collecting holes.

physics.ins-det↗

arXiv2020

The Impact of the Charge Barrier Height on Germanium (Ge) Detectors with Amorphous-Ge Contacts for Light Dark Matter Searches

Germanium (Ge) detectors with ability of measuring a single electron-hole (e-h) pair are needed in searching for light dark matter (LDM) down to the MeV scale. We investigate the feasibility of Ge detectors with amorphous-Ge (a-Ge) contacts to achieve the sensitivity of measuring a single e-h pair, which requires extremely low leakage current. Three Ge detectors with a-Ge contacts are used to study the charge barrier height for blocking electrons and holes. Using the measured bulk leakage current and the D$\ddot{o}$hler-Brodsky model, we obtain the values for charge barrier height and the density of localized energy states near the Fermi energy level for the top and bottom contacts, respectively. We predict that the bulk leakage current is extremely small and can be neglected at helium temperature ($\sim$4 K). Thus, Ge detectors with a-Ge contacts possess the potential to measure a single e-h pair for detecting LDM particles.

physics.ins-det↗

arXiv2019

Fabrication and Characterization of High-Purity Germanium Detectors with Amorphous Germanium Contacts

Large, high-purity, germanium (HPGe) detectors are needed for neutrinoless double-beta decay and dark matter experiments. Currently, large (> 4 inches in diameter) HPGe crystals can be grown at the University of South Dakota (USD). We verify that the quality of the grown crystals is sufficient for use in large detectors by fabricating and characterizing smaller HPGe detectors made from those crystals. We report the results from eight detectors fabricated over six months using crystals grown at USD. Amorphous germanium (a-Ge) contacts are used for blocking both electrons and holes. Two types of geometry were used to fabricate HPGe detectors. As a result, the fabrication process of small planar detectors at USD is discussed in great detail. The impact of the procedure and geometry on the detector performance was analyzed for eight detectors. We characterized the detectors by measuring the leakage current, capacitance, and energy resolution at 662 keV with a Cs-137 source. Four detectors show good performance, which indicates that crystals grown at USD are suitable for making HPGe detectors.

physics.ins-det↗

arXiv2018

Investigation of Amorphous Germanium Contact Properties with Planar Detectors Made from Home-Grown Germanium Crystals

The characterization of detectors fabricated from home-grown crystals is the most direct way to study crystal properties. We fabricated planar detectors from high-purity germanium (HPGe) crystals grown at the University of South Dakota (USD). In the fabrication process, a HPGe crystal slice cut from a USD-grown crystal was coated with a high resistivity thin film of amorphous Ge (a-Ge) followed by depositing a thin layer of aluminum on top of the a-Ge film to define the physical area of the contacts. We investigated the detector performance including the $I$-$V$ characteristics, $C$-$V$ characteristics and spectroscopy measurements for a few detectors. The results document the good quality of the USD-grown crystals and electrical contacts.

physics.ins-det↗

arXiv2017

Direct Detection of MeV-Scale Dark Matter Utilizing Germanium Internal Amplification for the Charge Created by the Ionization of Impurities

Light, MeV-scale dark matter (DM) is an exciting DM candidate that is undetectable by current experiments. A germanium (Ge) detector utilizing internal charge amplification for the charge carriers created by the ionization of impurities is a promising new technology with experimental sensitivity for detecting MeV-scale DM. We analyze the physics mechanisms of the signal formation, charge creation, charge internal amplification, and the projected sensitivity for directly detecting MeV-scale DM particles. We present a design for a novel Ge detector at helium temperature ($\sim$4 K) enabling ionization of impurities from DM impacts. With large localized E-fields, the ionized excitations can be accelerated to kinetic energies larger than the Ge bandgap at which point they can create additional electron-hole pairs, producing intrinsic amplification to achieve an ultra-low energy threshold of $\sim$0.1 eV for detecting low-mass DM particles in the MeV scale. Correspondingly, such a Ge detector with 1 kg-year exposure will have high sensitivity to a DM-nucleon cross section of $\sim$5$\times$10$^{-45}$ cm$^{2}$ at a DM mass of $\sim$10 MeV/c$^{2}$ and a DM-electron cross section of $\sim$5$\times$10$^{-46}$cm$^{2}$ at a DM mass of $\sim$1 MeV/c$^2$.

physics.ins-det↗

arXiv2017

The impact of neutral impurity concentration on charge drift mobility in n-type germanium

The impact of neutral impurity scattering of electrons on the charge drift mobility in high purity n-type germanium crystals at 77 Kelvin is investigated. We calculated the contributions from ionized impurity scattering, lattice scattering, and neutral impurity scattering to the total charge drift mobility using theoretical models. The experimental data such as charge carrier concentration, mobility and resistivity are measured by Hall Effect system at 77 Kelvin. The neutral impurity concentration is derived from the Matthiessen's rule using the measured Hall mobility and ionized impurity concentration. The radial distribution of the neutral impurity concentration in the self-grown crystals is determined. Consequently, we demonstrated that neutral impurity scattering is a significant contribution to the charge drift mobility, which has a dependence on the concentration of neutral impurities in high purity n-type germanium crystal.

physics.ins-det↗

arXiv2016

The impact of neutral impurity concentration on charge drift mobility in germanium

We reported a new result of the neutral impurity scattering of holes that has impact on the charge drift mobility in high purity p-type germanium crystals at 77 Kelvin. The charge carrier concentration, mobility and resistivity are measured by Hall Effect system at 77 Kelvin. We investigated the contribution to the total charge drift mobility from ionized impurity scattering, lattice scattering, and neutral impurity scattering with the best theoretical models and experimental data. Several samples with measured Hall mobility from the grown crystals are used for this investigation. With the measured Hall mobility and ionized impurity concentration as well as the theoretical models, we calculated the neutral impurity concentration by the Matthiessen's rule. As a result, the distributions of the neutral impurity concentrations with respect to the radius of the crystals are obtained. Consequently, we demonstrated that neutral impurity scattering is a significant contribution to the charge drift mobility, which has dependence on the concentration of neutral impurities in a given germanium crystal.

physics.ins-det↗

arXiv2008

Biodegradable Polylactic Acid (PLA) Microstructures for Scaffold Applications

In this research, we present a simple and cost effective soft lithographic process to fabricate PLA scaffolds for tissue engineering. In which, the negative photoresist JSR THB-120N was spun on a glass subtract followed by conventional UV lithographic processes to fabricate the master to cast the PDMS elastomeric mold. A thin poly(vinyl alcohol) (PVA) layer was used as a mode release such that the PLA scaffold can be easily peeled off. The PLA precursor solution was then cast onto the PDMS mold to form the PLA microstructures. After evaporating the solvent, the PLA microstructures can be easily peeled off from the PDMS mold. Experimental results show that the desired microvessels scaffold can be successfully transferred to the biodegradable polymer PLA.

cs.OH↗

arXiv2008

A Two-Step Etching Method to Fabricate Nanopores in Silicon

A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching can be effectively carried out. An electrochemical system is employed to detect and record the ion diffusion current once the pre-etched cavities are etched into a through nanopore. Experimental results indicate that the proposed method can cost effectively fabricate nanopores in silicon.

cs.OH↗