arXiv subjects

G. Burnell

Publications and source records attributed to G. Burnell.

At least 19 recordsLinked to original sources

arXiv2024

Evidence of 3$d$-4$f$ antiferromagnetic coupling in strain-tuned PrCo$_{0.5}$Ni$_{0.5}$O$_{3-\delta}$ epitaxial films

The strong exchange interaction between 3$d$-4$f$ magnetic sublattice in rare-earth perovskites introduces a variety of complex magnetic states hosting fascinating electronic ground states with exotic properties. Especially when it comes to rare-earth nickelate and cobaltite perovskites, tuning their rich magnetic phase diagram and spin-state transitions make them potential candidates for spintronic applications. Here, we report the observation of antiferromagnetic coupling between Pr 4$f$ and Ni/Co 3$d$ magnetic sublattices and its tunability with strain in PrCo$_{0.5}$Ni$_{0.5}$O$_{3-\delta}$ (PCNO) thin films. SQUID magnetization measurements reveal ferromagnetic (FM) ordering around 25 K, followed by a spin glass transition at low temperatures subject to spin reorientation. Competing magnetic interactions arise owing to the 3$d$-4$f$ antiferromagnetic (AFM) coupling between Pr and Co/Ni sublattice as revealed by the X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) at the Pr $M_{4,5}$ and Co/Ni $L_{2,3}$ absorption edges. Strain dependence on these AFM coupling reveals an increase (decrease) in the AFM exchange interaction for tensile (compressive) strained films, leading to a net decrease (increase) in the magnetization of PCNO films at low temperatures. The relative increase in low-temperature negative magnetoresistance for compressively strained films also reflects the enhanced ferromagnetic ordering in the system. The angle-dependent magnetoresistance measurements reveal a two-fold anisotropic magnetoresistance (AMR) in tensile strained PCNO films. In contrast, temperature-dependent switching of AMR accompanied by a two- to four-fold symmetry crossover is observed for LaAlO$_3$-grown compressive strained films.

cond-mat.mtrl-sci↗

arXiv2023

Growth and Characterization of $β$-Mn Structured CoZn Thin Films

Thin films of polycrystalline $β$-Mn structure CoZn have been grown on thermally oxidized Si substrates by co-sputtering from elemental targets followed by annealing. A range of films grown with variable Co deposition power and fixed Zn deposition power were produced, so as to vary the proportions of the two elements reaching the substrate, which were annealed post-growth. Whilst all films exhibited a (211) $β$-Mn structure CoZn texture in X-ray diffraction, transmission electron microscopy showed that the composition with the highest integrated intensity for that Bragg peak contained large vacancies and was covered by a thick ZnO cap owing to being Co-deficient overall. CoZn films deposited at ratios tuned to give the optimal volume fraction of $β$-Mn were continuous, with crystallites up to 200~nm in size, with a much thinner ZnO cap layer. Magnetic measurements show that such optimal CoZn films have a Curie temperature $T_\mathrm{C} \sim 420$~K and saturation magnetization of 120~emu/cm$^3$, properties close to those reported for bulk crystals. The $β$-Mn structure is chiral (P4$_{1}$32/P4$_{3}$32 space group) and is known to give rise to a Dzyaloshinkii-Moriya interaction (DMI) that stabilizes room-temperature skyrmions in the bulk. Our thin films are thus a potential materials platform, compatible with planar processing technology, for magnetic skyrmions arising from a bulk DMI.

cond-mat.mtrl-sci↗

arXiv2023

Thin film epitaxial [111] Co$_{50}$Pt$_{50}$: Structure, magnetisation, and spin polarisation

Ferromagnetic films with perpendicular magnetic anisotropy are of interest in spintronics and superconducting spintronics. Perpendicular magnetic anisotropy can be achieved in thin ferromagnetic multilayer structures, when the anisotropy is driven by carefully engineered interfaces. Devices with multiple interfaces are disadvantageous for our application in superconducting spintronics, where the current perpendicular to plane is affected by the interfaces. Robust intrinsic PMA can be achieved in certain Co$_x$Pt$_{100-x}$ alloys and compounds at any thickness, without increasing the number of interfaces. Here, we grow equiatomic Co$_{50}$Pt$_{50}$ and report a comprehensive study on the structural, magnetic, and spin-polarisation properties in the $L1_1$ and $L1_0$ ordered compounds. Primarily, interest in Co$_{50}$Pt$_{50}$ has been in the $L1_0$ crystal structure, where layers of Pt and Co are stacked alternately in the [100] direction. There has been less work on $L1_1$ crystal structure, where the stacking is in the [111] direction. For the latter $L1_1$ crystal structure, we find magnetic anisotropy perpendicular to the film plane. For the former $L1_0$ crystal structure, the magnetic anisotropy is perpendicular to the [100] plane, which is neither in-plane or out-of-plane in our samples. We obtain a value for the ballistic spin polarisation of the $L1_1$ and $L1_0$ Co$_{50}$Pt$_{50}$ to be $47\pm3\%$.

cond-mat.mes-hall↗

arXiv2023

Supercurrent diode effect in thin film Nb tracks

We demonstrate nonreciprocal critical current in 65 nm thick polycrystalline and epitaxial Nb thin films patterned into tracks. The nonreciprocal behavior gives a supercurrent diode effect, where the current passed in one direction is a supercurrent and the other direction is a normal state (resistive) current. We attribute fabrication artefacts to creating the supercurrent diode effect in our tracks. We study the variation of the diode effect with temperature and magnetic field, and find a dependence with the width of the Nb tracks from 2-10 $μ$m. For both polycrystalline and epitaxial samples, we find that tracks of width 4 $μ$m provides the largest supercurrent diode efficiency of up to $\approx$30$\%$, with the effect reducing or disappearing in the widest tracks of 10 $μ$m. We propose a model based on the limiting contributions to the critical current density to explain the track width dependence of the induced supercurrent diode effect. It is anticipated that the supercurrent diode will become a ubiquitous component of the superconducting computer.

cond-mat.supr-con↗

arXiv2021

Pt and CoB trilayer Josephson $π$ junctions with perpendicular magnetic anisotropy

We report on the electrical transport properties of Nb based Josephson junctions with Pt/Co$_{68}$B$_{32}$/Pt ferromagnetic barriers. The barriers exhibit perpendicular magnetic anisotropy, which has the main advantage for potential applications over magnetisation in-plane systems of not affecting the Fraunhofer response of the junction. In addition, we report that there is no magnetic dead layer at the Pt/Co$_{68}$B$_{32}$ interfaces, allowing us to study barriers with ultra-thin Co$_{68}$B$_{32}$. In the junctions, we observe that the magnitude of the critical current oscillates with increasing thickness of the Co$_{68}$B$_{32}$ strong ferromagnetic alloy layer. The oscillations are attributed to the ground state phase difference across the junctions being modified from zero to $π$. The multiple oscillations in the thickness range $0.2~\leqslant~d_\text{CoB}~\leqslant~1.4$~nm suggests that we have access to the first zero-$π$ and $π$-zero phase transitions. Our results fuel the development of low-temperature memory devices based on ferromagnetic Josephson junctions.

cond-mat.supr-con↗

arXiv2020

Spin-valve Josephson junctions with perpendicular magnetic anisotropy for cryogenic memory

We demonstrate a Josephson junction with a weak link containing two ferromagnets, with perpendicular magnetic anisotropy and independent switching fields in which the critical current can be set by the mutual orientation of the two layers. Such pseudospin-valve Josephson junctions are a candidate cryogenic memory in an all superconducting computational scheme. Here, we use Pt/Co/Pt/CoB/Pt as the weak link of the junction with $d_\text{Co} = 0.6$ nm, $d_\text{CoB} = 0.3$ nm, and $d_\text{Pt} = 5$ nm and obtain a $60\%$ change in the critical current for the two magnetization configurations of the pseudospin-valve. Ferromagnets with perpendicular magnetic anisotropy have advantages over magnetization in-plane systems which have been exclusively considered to this point, as in principle the magnetization and magnetic switching of layers in the junction should not affect the in-plane magnetic flux.

cond-mat.supr-con↗

arXiv2020

Phase Boundary Exchange Coupling in the Mixed Magnetic Phase Regime of a Pd-doped FeRh Epilayer

Spin-wave resonance measurements were performed in the mixed magnetic phase regime of a Pd-doped FeRh epilayer that appears as the first-order ferromagnetic-antiferromagnetic phase transition takes place. It is seen that the measured value of the exchange stiffness is suppressed throughout the measurement range when compared to the expected value of the fully ferromagnetic regime, extracted via the independent means of a measurement of the Curie point, for only slight changes in the ferromagnetic volume fraction. This behavior is attributed to the influence of the antiferromagnetic phase: inspired by previous experiments that show ferromagnetism to be most persistent at the surfaces and interfaces of FeRh thin films, we modelled the antiferromagnetic phase as forming a thin layer in the middle of the epilayer through which the two ferromagnetic layers are coupled up to a certain critical thickness. The development of this exchange stiffness is then consistent with that expected from the development of an exchange coupling across the magnetic phase boundary, as a consequence of a thickness dependent phase transition taking place in the antiferromagnetic regions and is supported by complimentary computer simulations of atomistic spin-dynamics. The development of the Gilbert damping parameter extracted from the ferromagnetic resonance investigations is consistent with this picture.

cond-mat.mtrl-sci↗

arXiv2017

Pinning and hysteresis in the field dependent diameter evolution of skyrmions in Pt/Co/Ir superlattice stacks

We have imaged Néel skyrmion bubbles in perpendicularly magnetised polycrystalline multilayers patterned into 1 μm diameter dots, using scanning transmission x-ray microscopy. The skyrmion bubbles can be nucleated by the application of an external magnetic field and are stable at zero field with a diameter of 260 nm. Applying an out of plane field that opposes the magnetisation of the skyrmion bubble core moment applies pressure to the bubble and gradually compresses it to a diameter of approximately 100 nm. On removing the field the skyrmion bubble returns to its original diameter via a hysteretic pathway where most of the expansion occurs in a single abrupt step. This contradicts analytical models of homogeneous materials in which the skyrmion compression and expansion are reversible. Micromagnetic simulations incorporating disorder can explain this behaviour using an effective thickness modulation between 10 nm grains.

cond-mat.mes-hall↗

arXiv2017

Control of superconductivity with a single ferromagnetic layer in niobium/erbium bilayers

Superconducting spintronics in hybrid superconductor/ferromagnet (S-F) heterostructures provides an exciting potential new class of device. The prototypical super-spintronic device is the superconducting spin-valve, where the critical temperature, $T_c$, of the S-layer can be controlled by the relative orientation of two (or more) F-layers. Here, we show that such control is also possible in a simple S/F bilayer. Using field history to set the remanent magnetic state of a thin Er layer, we demonstrate for a Nb/Er bilayer a high level of control of both $T_c$ and the shape of the resistive transition, R(T), to zero resistance. We are able to model the origin of the remanent magnetization, treating it as an increase in the effective exchange field of the ferromagnet and link this, using conventional S-F theory, to the suppression of $T_c$. We observe stepped features in the R(T) which we argue is due to a fundamental interaction of superconductivity with inhomogeneous ferromagnetism, a phenomena currently lacking theoretical description.

cond-mat.supr-con↗

arXiv2015

Spin relaxation through Kondo scattering in Cu/Py lateral spin valves

The temperature dependence of the spin diffusion length typically reflects the scattering mechanism responsible for spin relaxation. Within non-magnetic metals it is reasonable to expect the Elliot-Yafet mechanism to play a role and thus the temperature dependence of the spin diffusion length might be inversely proportional to resistivity. In lateral spin valves measurements have found that at low temperatures the spin diffusion length unexpected decreases. By measuring the transport properties of lateral Py/Cu/Py spin valves fabricated with different purities of Cu, we extract a spin diffusion length which shows this suppression below 30K only in the presence of the Kondo effect. We have calculated the spin-relaxation rate and isolated the contributions from magnetic impurities. We find the spin-flip probability of a magnetic impurity to be 34%. Our semi-quantitative analysis demonstrates the dominant role of Kondo scattering in spin relaxation, even in low concentrations of order 1 p.p.m., and hence accounts for the reduction in spin diffusion length observed by ourselves and others.

cond-mat.mes-hall↗

arXiv2015

Remotely induced magnetism in a normal metal using a superconducting spin-valve

Superconducting spintronics has emerged in the last decade as a promising new field that seeks to open a new dimension for nanoelectronics by utilizing the internal spin structure of the superconducting Cooper pair as a new degree of freedom. Its basic building blocks are spin-triplet Cooper pairs with equally aligned spins, which are promoted by proximity of a conventional superconductor to a ferromagnetic material with inhomogeneous macroscopic magnetization. Using low-energy muon spin rotation experiments, we find an entirely unexpected novel effect: the appearance of a magnetization in a thin layer of a non-magnetic metal (gold), separated from a ferromagnetic double layer by a 50 nm thick superconducting layer of Nb. The effect can be controlled by either temperature or by using a magnetic field to control the state of the remote ferromagnetic elements and may act as a basic building block for a new generation of quantum interference devices based on the spin of a Cooper pair.

cond-mat.supr-con↗

arXiv2015

Modification of perpendicular magnetic anisotropy and domain wall velocity in Pt/Co/Pt by voltage-induced strain

The perpendicular magnetic anisotropy K$_e$$_f$$_f$, magnetization reversal, and field-driven domain wall velocity in the creep regime are modified in Pt/Co(0.85-1.0 nm)/Pt thin films by strain applied via piezoelectric transducers. K$_e$$_f$$_f$, measured by the extraordinary Hall effect, is reduced by 10 kJ/m$^3$ by tensile strain out-of-plane ε$_z$ = 9 x 10-4, independently of the film thickness, indicating a dominant volume contribution to the magnetostriction. The same strain reduces the coercive field by 2-4 Oe, and increases the domain wall velocity measured by wide-field Kerr microscopy by 30-100 %, with larger changes observed for thicker Co layers. We consider how strain-induced changes in the perpendicular magnetic anisotropy can modify the coercive field and domain wall velocity.

cond-mat.mes-hall↗

arXiv2014

Controlled suppression of superconductivity by the generation of polarized Cooper pairs in spin valve structures

Transport measurements are presented on thin-film superconducting spin-valve systems, where the controlled non-collinear arrangement of two ferromagnetic Co layers can be used to influence the superconducting state of Nb. We observe a very clear oscillation of the superconducting transition temperature with the relative orientation of the two ferromagnetic layers. Our measurements allow us to distinguish between the competing influences of domain averaging, stray dipolar fields and the formation of superconducting spin triplets. Domain averaging is shown to lead to a weak enhancement of transition temperature for the anti-parallel configuration of exchange fields, while much larger changes are observed for other configurations, which can be attributed to drainage currents due to spin triplet formation.

cond-mat.supr-con↗

arXiv2014

DMI meter: Measuring the Dzyaloshinskii-Moriya interaction inversion in Pt/Co/Ir/Pt multilayers

We describe a field-driven domain wall creep-based method for the quantification of interfacial Dzyaloshinskii-Moriya interactions (DMI) in perpendicularly magnetized thin films. The use of only magnetic fields to drive wall motion removes the possibility of mixing with current-related effects such as spin Hall effect or Rashba field, as well as the complexity arising from lithographic patterning. We demonstrate this method on sputtered Pt/Co/Ir/Pt multilayers with a variable Ir layer thickness. By inserting an ultrathin layer of Ir at the Co/Pt interface we can reverse the sign of the effective DMI acting on the sandwiched Co layer, and therefore continuously change the domain wall (DW) structure from right- to the left-handed Néel wall. We also show that the DMI shows exquisite sensitivity to the exact details of the atomic structure at the film interfaces by comparison with a symmetric epitaxial Pt/Co/Pt multilayer.

cond-mat.mtrl-sci↗

arXiv2008

Spin-transfer switching and low-field precession in exchange-biased spin valve nano-pillars

Using a three-dimensional focused-ion beam lithography process we have fabricated nanopillar devices which show spin transfer torque switching at zero external magnetic fields. Under a small in-plane external bias field, a field-dependent peak in the differential resistance versus current is observed similar to that reported in asymmetrical nanopillar devices. This is interpreted as evidence for the low-field excitation of spin waves which in our case is attributed to a spin-scattering asymmetry enhanced by the IrMn exchange bias layer coupled to a relatively thin CoFe fixed layer.

cond-mat.mtrl-sci↗

arXiv2007

0-pi oscillations in nanostructured Nb/Fe/Nb Josephson junctions

The physics of the $π$ phase shift in ferromagnetic Josephson junctions may enable a range of applications for spin-electronic devices and quantum computing. We investigate transitions from ``0'' to ``$π$'' states in Nb/Fe/Nb Josephson junctions by varying the Fe barrier thickness from 0.5 nm to 5.5 nm. From magnetic measurements we estimate for Fe a magnetic dead layer of about 1.1 nm. By fitting the characteristic voltage oscillations with existing theoretical models we extrapolate an exchange energy of 256 meV, a Fermi velocity of $1.98 \times 10^5$ m/s and an electron mean free path of 6.2 nm, in agreement with other reported values. From the temperature dependence of the $I_CR_N$ product we show that its decay rate exhibits a nonmonotonic oscillatory behavior with the Fe barrier thickness.

cond-mat.supr-con↗

arXiv2006

Critical Current Oscillations in Strong Ferromagnetic Pi-Junctions

We report magnetic and electrical measurements of Nb Josephson junctions with strongly ferromagnetic barriers of Co, Ni and Ni80Fe20 (Py). All these materials show multiple oscillations of critical current with barrier thickness implying repeated 0-pi phase-transitions in the superconducting order parameter. We show in particular that the Co barrier devices can be accurately modelled using existing clean limit theories and so that, despite the high exchange energy (309 meV), the large IcRN value in the pi-state means Co barriers are ideally suited to the practical development of superconducting pi-shift devices.

cond-mat.supr-con↗

arXiv2005

Characteristics of strong ferromagnetic Josephson junctions with epitaxial barriers

We present the measurement of superconductor / ferromagnetic Josephson junctions, based on an epitaxial Nb bottom electrode and epitaxial Fe20Ni80 barrier. Uniform junctions have been fabricated with a barrier thicknesses in the range 2-12 nm. The maximum critical current density ~ 2.4 \pm 0.2 * 10^9 Am^-2 was found for a devices with a 3 nm thick barrier at 4.2 K, corresponding to an average characteristic voltage I_C R_N ~ 16 \muV. The I_C R_N showed a non-monotonic behavior with Fe20Ni80 thickness. The variation of the resistance of a unit area AR_N, of the junctions with barrier thickness gave a Nb/Py specific interface resistance of 6.0 \pm 0.5 fΩm^2 and Fe20Ni80 resistivity of 174 \pm 50 nΩm, consistent with other studies in polycrystalline samples.

cond-mat.supr-con↗