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arXiv · 1408.2664

Modification of perpendicular magnetic anisotropy and domain wall velocity in Pt/Co/Pt by voltage-induced strain

P. M. Shepley·A. W. Rushforth·M. Wang·G. Burnell·T. A. Moore
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Abstract

The perpendicular magnetic anisotropy K$_e$$_f$$_f$, magnetization reversal, and field-driven domain wall velocity in the creep regime are modified in Pt/Co(0.85-1.0 nm)/Pt thin films by strain applied via piezoelectric transducers. K$_e$$_f$$_f$, measured by the extraordinary Hall effect, is reduced by 10 kJ/m$^3$ by tensile strain out-of-plane ε$_z$ = 9 x 10-4, independently of the film thickness, indicating a dominant volume contribution to the magnetostriction. The same strain reduces the coercive field by 2-4 Oe, and increases the domain wall velocity measured by wide-field Kerr microscopy by 30-100 %, with larger changes observed for thicker Co layers. We consider how strain-induced changes in the perpendicular magnetic anisotropy can modify the coercive field and domain wall velocity.

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P. M. Shepley, A. W. Rushforth, M. Wang, G. Burnell, T. A. Moore. 2015-03-19. Modification of perpendicular magnetic anisotropy and domain wall velocity in Pt/Co/Pt by voltage-induced strain. https://doi.org/10.1038/srep07921

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