arXiv subjects

G. C. Gardner

Publications and source records attributed to G. C. Gardner.

At least 37 records · Page 2Linked to original sources

arXiv2019

Characterising Quantum Devices at Scale with Custom Cryo-CMOS

We make use of a custom-designed cryo-CMOS multiplexer (MUX) to enable multiple quantum devices to be characterized in a single cool-down of a dilution refrigerator. Combined with a packaging approach that integrates cryo-CMOS chips and a hot-swappable, parallel device test platform, we describe how this setup takes a standard wiring configuration as input and expands the capability for batch-characterization of quantum devices at milli-Kelvin temperatures and high magnetic fields. The architecture of the cryo-CMOS multiplexer is discussed and performance benchmarked using few-electron quantum dots and Hall mobility-mapping measurements.

physics.app-ph↗

arXiv2019

Two- and three-electron bubbles in Al$_{x}$Ga$_{1-x}$As/Al$_{0.24}$Ga$_{0.76}$As quantum wells

We report on transport signatures of eight distinct bubble phases in the $N=3$ Landau level of a Al$_{x}$Ga$_{1-x}$As/Al$_{0.24}$Ga$_{0.76}$As quantum well with $x = 0.0015$. These phases occur near partial filling factors $ν^\star \approx 0.2\,(0.8)$ and $ν^\star \approx 0.3\,(0.7)$ and have $M = 2$ and $M = 3$ electrons (holes) per bubble, respectively. We speculate that a small amount of alloy disorder in our sample helps to distinguish these broken symmetry states in low-temperature transport measurements.

cond-mat.mes-hall↗

arXiv2019

Dispersive Gate Sensing the Quantum Capacitance of a Point Contact

The technique of dispersive gate sensing (DGS) uses a single electrode to readout a qubit by detecting the change in quantum capacitance due to single electron tunnelling. Here, we extend DGS from the detection of discrete tunnel events to the open regime, where many electrons are transported via partially- or fully-transmitting quantum modes. Comparing DGS with conventional transport shows that the technique can resolve the Van Hove singularities of a one-dimensional ballistic system, and also probe aspects of the potential landscape that are not easily accessed with dc transport. Beyond readout, these results suggest that gate-sensing can also be of use in tuning-up qubits or probing the charge configuration of open quantum devices in the regime where electrons are delocalized.

cond-mat.mes-hall↗

arXiv2018

A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices

Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a wide host of quantum phases. Here we present a measurement and fabrication scheme that builds on capacitance spectroscopy and allows for the independent control of density and periodic potential strength imposed on a two-dimensional electron gas. We characterize disorder levels and (in)homogeneity and develop and optimize different gating strategies at length scales where interactions are expected to be strong. A continuation of these ideas might see to fruition the emulation of interaction-driven Mott transitions or Hofstadter butterfly physics.

cond-mat.mes-hall↗

arXiv2018

High mobility InAs 2DEGs on GaSb substrates: a platform for mesoscopic quantum transport

High mobility, strong spin-orbit coupling, and large Landé g-factor make the two-dimensional electron gas (2DEG) in InAs quantum wells grown on nearly-lattice-matched GaSb substrates an attractive platform for mesoscopic quantum transport experiments. Successful operation of mesoscopic devices relies on three key properties: electrical isolation from the substrate; ability to fully deplete the 2DEG and control residual sidewall conduction with lithographic gates; and high mobility to ensure ballistic transport over mesoscopic length scales. Simultaneous demonstration of these properties has remained elusive for InAs 2DEGs on GaSb substrates. Here we report on heterostructure design, molecular beam epitaxy growth, and device fabrication that result in high carrier mobility and full 2DEG depletion with minimal residual edge conduction. Our results provide a pathway to fully-controlled 2DEG-based InAs mesoscopic devices.

cond-mat.mes-hall↗

arXiv2018

Electron-Electron Interactions and the Paired-to-Nematic Quantum Phase Transition in the Second Landau Level

In spite of its ubiquity in strongly correlated systems, the competition of paired and nematic ground states remains poorly understood. Recently such a competition was reported in the two-dimensional electron gas at filling factor $ν=5/2$. At this filling factor a pressure-induced quantum phase transition was observed from the paired fractional quantum Hall state to the quantum Hall nematic. Here we show that the pressure induced paired-to-nematic transition also develops at $ν=7/2$, demonstrating therefore this transition in both spin branches of the second orbital Landau level. However, we find that pressure is not the only parameter controlling this transition. Indeed, ground states consistent with those observed under pressure also develop in a sample measured at ambient pressure, but in which the electron-electron interaction was tuned close to its value at the quantum critical point. Our experiments suggest that electron-electron interactions play a critical role in driving the paired-to-nematic transition.

cond-mat.str-el↗

arXiv2017

Possible nematic to smectic phase transition in a two-dimensional electron gas at half-filling

Liquid crystalline phases of matter permeate nature and technology, with examples ranging from cell membranes to liquid-crystal displays. Remarkably, electronic liquid crystal phases can exist in two-dimensional electron systems (2DES) at half Landau level filling in the quantum Hall regime. Theory has predicted the existence of a liquid crystal smectic phase that breaks both rotational and translational symmetries. However, previous experiments in 2DES are most consistent with an anisotropic nematic phase breaking only rotational symmetry. Here we report three transport phenomena at half-filling in ultra-low disorder 2DES: a non-monotonic temperature dependence of the sample resistance, dramatic onset of large time-dependent resistance fluctuations, and a sharp feature in the differential resistance suggestive of depinning. These data suggest that a sequence of symmetry-breaking phase transitions occurs as temperature is lowered: first a transition from an isotropic liquid to a nematic phase and finally to a liquid crystal smectic phase.

cond-mat.mes-hall↗

arXiv2017

Impact of silicon doping on low frequency charge noise and conductance drift in GaAs/AlGaAs nanostructures

We present measurements of low frequency charge noise and conductance drift in modulation doped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy in which the silicon doping density has been varied from $2.4\times 10^{18} cm^{-3}$ (critically doped) to $6.0\times 10^{18} cm^{-3}$ (overdoped). Quantum point contacts were used to detect charge fluctuations. A clear reduction of both short time scale telegraphic noise and long time scale conductance drift with decreased doping density was observed. These measurements indicate that the {\it neutral} doping region plays a significant role in charge noise and conductance drift.

cond-mat.mes-hall↗

arXiv2017

Device Architecture for Coupling Spin Qubits Via an Intermediate Quantum State

We demonstrate a scalable device architecture that facilitates indirect exchange between singlet-triplet spin qubits, mediated by an intermediate quantum state. The device comprises five quantum dots, which can be independently loaded and unloaded via tunneling to adjacent reservoirs, avoiding charge latch-up common in linear dot arrays. In a step towards realizing two-qubit entanglement based on indirect exchange, the architecture permits precise control over tunnel rates between the singlet-triplet qubits and the intermediate state. We show that by separating qubits by 1 um, the residual capacitive coupling between them is reduced to 7 ueV.

cond-mat.mes-hall↗

arXiv2017

Onset of Quantum Criticality in the Topological-to-Nematic Transition in a Two-dimensional Electron Gas at Filling Factor $ν=5/2$

Under hydrostatic pressure, the ground state of a two-dimensional electron gas at $ν=5/2$ changes from a fractional quantum Hall state to the stripe phase. By measuring the energy gap of the fractional quantum Hall state and of the onset temperature of the stripe phase we mapped out a phase diagram of these competing phases in the pressure-temperature plane. Our data highlight the dichotomy of two descriptions of the half-filled Landau level near the quantum critical point: one based on electrons and another on composite fermions.

cond-mat.str-el↗

arXiv2017

Gate-Sensing Charge Pockets in the Semiconductor Qubit Environment

We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron tunnel events, is shown to be sensitive to pockets of charge in the potential-landscape likely under, and surrounding, the surface gates that define qubits and their readout sensors. Configuring a quantum point contact (QPC) as a localized emitter, we show how these charge pockets are activated by the relaxation of electrons tunneling through a barrier. The presence of charge pockets creates uncontrolled offsets in gate-bias and their thermal activation by on-chip tunnel currents suggests further sources of charge-noise that lead to decoherence in semiconductor qubits.

cond-mat.mes-hall↗

arXiv2017

Apparent temperature-induced reorientation of quantum Hall stripes

Our magnetotransport measurements of quantum Hall stripes in a high-quality GaAs quantum well in a slightly tilted magnetic field reveal that the orientation of stripes can be changed by temperature. Field-cooling and field-warming measurements, as well as observation of hysteresis at intermediate temperatures allow us to conclude that the observed temperature-induced reorientation of stripes is owing to the existence of two distinct minima in the symmetry-breaking potential. We also find that the native symmetry-breaking mechanism does not depend on temperature and that low-temperature magnetotransport data should be treated with caution as they do not necessarily reveal the true ground state, even in the absence of hysteresis.

cond-mat.mes-hall↗

arXiv2017

Notch filtering the nuclear environment of a spin qubit

Electron spins in gate-defined quantum dots provide a promising platform for quantum computation. In particular, spin-based quantum computing in gallium arsenide takes advantage of the high quality of semiconducting materials, reliability in fabricating arrays of quantum dots, and accurate qubit operations. However, the effective magnetic noise arising from the hyperfine interaction with uncontrolled nuclear spins in the host lattice constitutes a major source of decoherence. Low frequency nuclear noise, responsible for fast (10 ns) inhomogeneous dephasing, can be removed by echo techniques. High frequency nuclear noise, recently studied via echo revivals, occurs in narrow frequency bands related to differences in Larmor precession of the three isotopes $\mathbf{^{69}Ga}$, $\mathbf{^{71}Ga}$, and $\mathbf{^{75}As}$. Here we show that both low and high frequency nuclear noise can be filtered by appropriate dynamical decoupling sequences, resulting in a substantial enhancement of spin qubit coherence times. Using nuclear notch filtering, we demonstrate a spin coherence time ($\mathbf{T_{2}}$) of 0.87 ms, five orders of magnitude longer than typical exchange gate times, and exceeding the longest coherence times reported to date in Si/SiGe gate-defined quantum dots.

cond-mat.mes-hall↗

arXiv2016

Evidence for a new symmetry breaking mechanism reorienting quantum Hall nematics

We report on the effect of in-plane magnetic field $B_\parallel$ on stripe phases in higher ($N=2,3$) Landau levels of a high-mobility 2D electron gas. In accord with previous studies, we find that a modest $B_\parallel$ applied parallel to the native stripes aligns them perpendicular to it. However, upon further increase of $B_\parallel$, stripes are reoriented back to their native direction. Remarkably, applying $B_\parallel$ perpendicular to the native stripes also aligns stripes parallel to it. Thus, regardless of the initial orientation of stripes with respect to $B_\parallel$, stripes are ultimately aligned \emph{parallel} to $B_\parallel$. These findings provide evidence for a $B_\parallel$-induced symmetry breaking mechanism which challenge current understanding of the role of $B_\parallel$ and should be taken into account when determining the strength of the native symmetry breaking potential. Finally, our results might indicate nontrivial coupling between the native and external symmetry breaking fields, which has not yet been theoretically considered.

cond-mat.mes-hall↗

arXiv2016

Reorientation of quantum Hall stripes within a partially filled Landau level

We investigate the effect of the filling factor on transport anisotropies, known as stripes, in high Landau levels of a two-dimensional electron gas. We find that at certain in-plane magnetic fields, the stripes orientation is sensitive to the filling factor within a given Landau level. This sensitivity gives rise to the emergence of stripes away from half-filling while an orthogonally-oriented, native stripes reside at half-filling. This switching of the anisotropy axes within a single Landau level can be attributed to a strong dependence of the native symmetry breaking potential on the filling factor.

cond-mat.mes-hall↗

arXiv2016

Spatially resolved breakdown in reentrant quantum Hall states

Reentrant integer quantum Hall (RIQH) states are believed to be correlated electron solid phases, though their microscopic description remains unclear. As bias current increases, longitudinal and Hall resistivities measured for these states exhibit multiple sharp breakdown transitions, a signature unique to RIQH states. We present spatially-resolved measurements of RIQH breakdown that indicate these breakdown signatures can be ascribed to a phase boundary between broken-down and unbroken regions, spreading chirally from source and drain contacts as a function of bias current and passing voltage probes one by one. The chiral sense of the spreading is not set by the chirality of the edge state itself, instead depending on electron- or hole-like character of the RIQH state.

cond-mat.mes-hall↗

arXiv2016

On-Chip Microwave Quantum Hall Circulator

Circulators are non-reciprocal circuit elements integral to technologies including radar systems, microwave communication transceivers, and the readout of quantum information devices. Their non-reciprocity arises from the interference of microwaves over the centimetre-scale of the signal wavelength in the presence of bulky magnetic media that break time-reversal symmetry. Here we realize a completely passive on-chip microwave circulator with size one-thousandth the wavelength by exploiting the chiral, slow-light response of a 2-dimensional electron gas (2DEG) in the quantum Hall regime. For an integrated GaAs device with 330 um diameter and 1 GHz centre frequency, a non-reciprocity of 25 dB is observed over a 50 MHz bandwidth. Furthermore, the direction of circulation can be selected dynamically by varying the magnetic field, an aspect that may enable reconfigurable passive routing of microwave signals on-chip.

cond-mat.mes-hall↗

arXiv2015

Optical emission spectroscopy study of competing phases of electrons in the second Landau level

Quantum phases of electrons in the filling factor range $2 \leqν\leq 3$ are probed by the weak optical emission from the partially populated second Landau level and spin wave measurements. Observations of optical emission include a multiplet of sharp peaks that exhibit a strong filling factor dependence. Spin wave measurements by resonant inelastic light scattering probe breaking of spin rotational invariance and are used to link this optical emission with collective phases of electrons. A remarkably rapid interplay between emission peak intensities manifests phase competition in the second Landau level.

cond-mat.mes-hall↗