arXiv subjects

G. D. Fuchs

Publications and source records attributed to G. D. Fuchs.

26 records · Page 2Linked to original sources

arXiv2009

Generation and transport of photoexcited electrons in single-crystal diamond

We report time-dependent photocurrent and transport measurements of sub-bandgap photoexcited carriers in nitrogen-rich (type Ib), single-crystal diamond. Transient carrier dynamics are characteristic of trapping conduction with long charge storage lifetimes of ~3 hours. By measuring the photoexcited Hall effect we confirm that the charge carriers are electrons and by varying the excitation energy we observe a strong turn-on in the photoconduction at ~1.9 eV. These findings shed new light on sub-bandgap states in nitrogen doped single-crystal diamond.

cond-mat.mtrl-sci↗

arXiv2008

Single-atom doping for quantum device development in diamond and silicon

The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which function is based on the manipulation of quantum states in single atoms, such as proposed quantum computers. We describe a single atom injector, in which the imaging and alignment capabilities of a scanning force microscope (SFM) are integrated with ion beams from a series of ion sources and with sensitive detection of current transients induced by incident ions. Ion beams are collimated by a small hole in the SFM tip and current changes induced by single ion impacts in transistor channels enable reliable detection of single ion hits. We discuss resolution limiting factors in ion placement and processing and paths to single atom (and color center) array formation for systematic testing of quantum computer architectures in silicon and diamond.

cond-mat.other↗

arXiv2008

Excited-state spectroscopy using single-spin manipulation in diamond

We use single-spin resonant spectroscopy to study the spin structure in the orbital excited-state of a diamond nitrogen-vacancy center at room temperature. We find that the excited state spin levels have a zero-field splitting that is approximately half of the value of the ground state levels, a g-factor similar to the ground state value, and a hyperfine splitting ~20x larger than in the ground state. In addition, the width of the resonances reflects the electronic lifetime in the excited state. We also show that the spin-splitting can significantly differ between NV centers, likely due to the effects of local strain, which provides a pathway to control over the spin Hamiltonian and may be useful for quantum information processing.

quant-ph↗

arXiv2007

Spin-Torque Ferromagnetic Resonance Measurements of Damping in Nanomagnets

We measure the magnetic damping parameter a in thin film CoFeB and permalloy (Py) nanomagnets at room temperature using ferromagnetic resonance driven by microwave frequency spin-transfer torque. We obtain $α_{CoFeB} = 0.014 \pm 0.003$ and $α_{Py}=0.010 \pm 0.002$, values comparable to measurements for extended thin films, but significantly less than the effective damping determined previously for similar nanomagnets by fits to time-domain studies of large-angle magnetic excitations and magnetic reversal. The greater damping found for the large amplitude nanomagnet dynamics is attributed to the nonlinear excitation of non-uniform magnetic modes.

cond-mat.mtrl-sci↗

arXiv2007

Magnetic vortex oscillator driven by dc spin-polarized current

Transfer of angular momentum from a spin-polarized current to a ferromagnet provides an efficient means to control the dynamics of nanomagnets. A peculiar consequence of this spin-torque, the ability to induce persistent oscillations of a nanomagnet by applying a dc current, has previously been reported only for spatially uniform nanomagnets. Here we demonstrate that a quintessentially nonuniform magnetic structure, a magnetic vortex, isolated within a nanoscale spin valve structure, can be excited into persistent microwave-frequency oscillations by a spin-polarized dc current. Comparison to micromagnetic simulations leads to identification of the oscillations with a precession of the vortex core. The oscillations, which can be obtained in essentially zero magnetic field, exhibit linewidths that can be narrower than 300 kHz, making these highly compact spin-torque vortex oscillator devices potential candidates for microwave signal-processing applications, and a powerful new tool for fundamental studies of vortex dynamics in magnetic nanostructures.

cond-mat.other↗

arXiv2005

Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions

We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs) with ultra-thin MgO tunnel barrier layers to investigate the relationship between the spin-transfer torque and the tunnel magnetoresistance (TMR) under finite bias. We find that the spin torque per unit current exerted on the free layer decreases by less than 10% over a bias range where the TMR decreases by over 40%. We examine the implications of this result for various spin-polarized tunneling models and find that it is consistent with magnetic-state-dependent effective tunnel decay lengths.

cond-mat.mes-hall↗

arXiv2005

Adjustable spin torque in magnetic tunnel junctions with two fixed layers

We have fabricated nanoscale magnetic tunnel junctions (MTJs) with an additional fixed magnetic layer added above the magnetic free layer of a standard MTJ structure. This acts as a second source of spin-polarized electrons that, depending on the relative alignment of the two fixed layers, either augments or diminishes the net spin-torque exerted on the free layer. The compound structure allows a quantitative comparison of spin-torque from tunneling electrons and from electrons passing through metallic spacer layers, as well as analysis of Joule selfheating effects. This has significance for current-switched magnetic random access memory (MRAM), where spin torque is exploited, and for magnetic sensing, where spin torque is detrimental.

cond-mat.mtrl-sci↗

arXiv2004

Spin-Transfer Effects in Nanoscale Magnetic Tunnel Junctions

We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required for magnetic switching are similar to values for all-metallic spin-valve devices. In the tunnel junctions, spin-transfer-driven switching can occur at voltages that are high enough to quench the tunnel magnetoresistance, demonstrating that the current remains spin-polarized at these voltages.

cond-mat.mtrl-sci↗