arXiv subjects

G. Liu

Publications and source records attributed to G. Liu.

At least 37 records · Page 2Linked to original sources

arXiv2017

Alpha Conjugate Neck Structures in the Collisions of 35 MeV/nucleon 40Ca with 40Ca

The de-excitation of alpha-conjugate nuclei produced in reactions of 35 MeV/nucleon 40Ca with 40Ca has been investigated. Particular emphasis is placed on examining the dynamics of collisions leading to projectile-like fragment exit channels. A general exploration of the reaction systematics reveals the binary dissipative character of the collisions and a hierarchy effect similar to that seen for heavier systems. Investigation of the subset of events characterized by a total alpha-conjugate mass (alpha particles plus alpha-conjugate fragments) equal to 40 and atomic number equal to 20 reveals a dominance of alpha-conjugate exit channels. The hierarchy effect for these channels leads to the production of alpha-clustered neck structures with potentially exotic geometries and properties.

nucl-ex↗

arXiv2016

Magnonic Interferometric Switch for Multi-Valued Logic Circuits

We investigated a possible use of the magnonic interferometric switches in multi-valued logic circuits. The switch is a three-terminal device consisting of two spin channels where input, control, and output signals are spin waves. Signal modulation is achieved via the interference between the source and gate spin waves. We report experimental data on a micrometer scale prototype based on Y3Fe2(FeO4)3 structure. The output characteristics are measured at different angles of the bias magnetic field. The On/Off ratio of the prototype exceeds 36 dB at room temperature. Experimental data is complemented by the theoretical analysis and the results of micro magnetic simulations showing spin wave propagation in a micrometer size magnetic junction. We also present the results of numerical modeling illustrating the operation of a nanometer-size switch consisting of just 20 spins in the source-drain channel. The utilization of spin wave interference as a switching mechanism makes it possible to build nanometer-scale logic gates, and minimize energy per operation, which is limited only by the noise margin. The utilization of phase in addition to amplitude for information encoding offers an innovative route towards multi-state logic circuits. We describe possible implementation of the three-value logic circuits based on the magnonic interferometric switches. The advantages and shortcomings inherent in interferometric switches are also discussed.

cond-mat.mes-hall↗

arXiv2016

Phase Retrieval by Linear Algebra

The null vector method, based on a simple linear algebraic concept, is proposed as a solution to the phase retrieval problem. In the case with complex Gaussian random measurement matrices, a non-asymptotic error bound is derived, yielding an asymptotic regime of accurate approximation comparable to that for the spectral vector method.

cs.IT↗

arXiv2015

Gas Sensing with h-BN Capped MoS2 Heterostructure Thin Film Transistors

We have demonstrated selective gas sensing with molybdenum disulfide (MoS2) thin films transistors capped with a thin layer of hexagonal boron nitride (h-BN). The resistance change was used as a sensing parameter to detect chemical vapors such as ethanol, acetonitrile, toluene, chloroform and methanol. It was found that h-BN dielectric passivation layer does not prevent gas detection via changes in the source-drain current in the active MoS2 thin film channel. The use of h-BN cap layers (thickness H=10 nm) in the design of MoS2 thin film gas sensors improves device stability and prevents device degradation due to environmental and chemical exposure. The obtained results are important for applications of van der Waals materials in chemical and biological sensing.

cond-mat.mes-hall↗

arXiv2015

Population inversion in hyperfine states of Rb with a single nanosecond chirped pulse in the framework of a 4-level system

We implement a 4-level semiclassical model of a single pulse interacting with the hyperfine structure in ultracold rubidium aimed at control of population dynamics and quantum state preparation. We discuss a method based on pulse chirping to achieve population inversion between hyperfine states of the 5S shell. The results may prove useful for quantum operations with ultracold atoms.

quant-ph↗

arXiv2014

First-principles study of the stability of free-standing germanene in oxygen

The O2 dissociation and O atoms adsorption on free-standing germanene are studied by using first-principles calculations in this letter. Compared with the spontaneous dissociation of oxygen molecule on free-standing silicene in air, germanene is more stable than silicene from kinetic point of view, with overcoming energy barrier of about 0.55 eV. Especially, in contrast with the unique chemical adsorption of O2-dissociation-induced O atoms on silicene, oxygen molecule can behave a correspondingly stable adsorption on germanene surface. Moreover, single O atom adsorption on germanene is also different to that on silicene, resulting in two opposite migration pathways on germanene surface. Furthermore, once the oxygen molecule dissociates into O atoms on germanene surface, the migration and desorption of O atoms are relatively difficult under room temperature due to the strong Ge-O bonds in the O-adsorbed germanene, in favor of forming germanium oxides. The results provide compelling evidence to show that free-standing gemanene is relatively stable in oxygen,which is different to silicene essentially.

cond-mat.mtrl-sci↗

arXiv2013

Is silicene stable in air? -- First principles study of oxygen adsorption and dissociation on silicene

The oxygen adsorption and dissociation on pristine silicene surface are studied by use of first-principles in this letter. The oxygen adsorption and dissociation on pristine silicene surface are studied by use of first-principles in this letter. It is found that the pristine silicene is not stable in air because the oxygen molecule can be easily adsorbed and dissociated into two O atoms without overcoming any energy barrier on pristine silicene surface. In addition, dissociated oxygen atoms are relatively difficult to migrate on or desorbed from pristine silicene surface, leading to poor mobility of oxygen atom. As a result, silicene would be changed into Si-O compounds in air. The work will be helpful to reveal the detail of the interaction between oxygen molecules and pristine silicene surface, especially helpful to understand the stability of silicene in air.

cond-mat.mes-hall↗

arXiv2013

The LHCb Trigger and its Performance in 2011

This paper presents the design of the LHCb trigger and its performance on data taken at the LHC in 2011. A principal goal of LHCb is to perform flavour physics measurements, and the trigger is designed to distinguish charm and beauty decays from the light quark background. Using a combination of lepton identification and measurements of the particles' transverse momenta the trigger selects particles originating from charm and beauty hadrons, which typically fly a finite distance before decaying. The trigger reduces the roughly 11\,MHz of bunch-bunch crossings that contain at least one inelastic $pp$ interaction to 3\,kHz. This reduction takes place in two stages; the first stage is implemented in hardware and the second stage is a software application that runs on a large computer farm. A data-driven method is used to evaluate the performance of the trigger on several charm and beauty decay modes.

hep-ex↗

arXiv2013

How does star formation proceed in the circumnuclear starburst ring of NGC 6951?

Gas inflowing along stellar bars is often stalled at the location of circumnuclear rings, that form an effective reservoir for massive star formation and thus shape the central regions of galaxies. However, how exactly star formation is proceeding within these circumnuclear starburst rings is subject of debate. Two main scenarios for this process have been put forward: In the first the onset of star formation is regulated by the total amount of gas present in the ring with star forming starting once a mass threshold has reached in a `random' position within the ring like `popcorn'. In the second star formation preferentially takes place near the locations where the gas enters the ring. This scenario has been dubbed `pearls-on-a-string'. Here we combine new optical IFU data covering the full stellar bar with existing multi-wavelength data to study in detail the 580 pc radius circumnuclear starburst ring in the nearby spiral galaxy NGC 6951. Using HST archival data together with Sauron and Oasis IFU data, we derive the ages and stellar masses of star clusters as well as the total stellar content of the central region. Adding information on the molecular gas distribution, stellar and gaseous dynamics and extinction, we find that the circumnuclear ring in NGC 6951 is ~1-1.5 Gyr old and has been forming stars for most of that time. We see evidence for preferred sites of star formation within the ring, consistent with the `pearls-on-a-string' scenario, when focusing on the youngest stellar populations. Due to the ring's longevity this signature is washed out when older stellar populations are included in the analysis.

astro-ph.GA↗

arXiv2012

Quantum transport in double-gated graphene devices

Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top gates. In zero magnetic fields, we observe formation of pnp junctions with tunable polarity and charge densities, as well as a tunable band gap in bilayer graphene and a tunable band overlap in trilayer graphene. In high magnetic fields, the devices' conductance are quantized at integer and fractional values of conductance quantum, and the data are in good agreement with a model based on edge state equilibration at pn interfaces.

cond-mat.mes-hall↗

arXiv2011

The Basis of the Second Law of Thermodynamics in Quantum Field Theory

The result that closed systems evolve toward equilibrium is derived entirely on the basis of quantum field theory for a model system, without invoking any of the common extra-mathematical notions of particle trajectories, collapse of the wave function, measurement, or intrinsically stochastic processes. The equivalent of the Stosszahlansatz of classical statistical mechanics is found, and has important differences from the classical version. A novel result of the calculation is that interacting many-body systems in the infinite volume limit evolve toward diagonal states (states with loss of all phase information) on the the time scale of the interaction time. The connection with the onset of off-diagonal phase coherence in Bose condensates is discussed.

cond-mat.stat-mech↗

arXiv2010

Tuning of Graphene Properties via Controlled Exposure to Electron Beams

Controlled modification of graphene properties is essential for its proposed electronic applications. Here we describe a possibility of tuning electrical properties of graphene via electron beam irradiation. We show that by controlling the irradiation dose one can change the carrier mobility and increase the resistance at the minimum conduction point in the single layer graphene. The bilayer graphene is less susceptible to the electron beam irradiation. The modification of graphene properties via irradiation can be monitored and quantified by the changes in the disorder D peak in Raman spectrum of graphene. The obtained results may lead to a new method of defect engineering of graphene physical properties, and to the procedure of "writing" graphene circuits via e-beam irradiation. The results also have implications for fabrication of graphene nanodevices, which involve scanning electron microscopy and electron beam lithography.

cond-mat.mtrl-sci↗

arXiv2010

Electrical and Noise Characteristics of Graphene Field-Effect Transistors: Ambient Effects and Noise Sources

We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special attention was given to determining the dominant noise sources in these devices and the effect of aging on the current-voltage and noise characteristics. The analysis of the noise spectral density dependence on the area of graphene channel showed that the dominant contributions to the low-frequency electronic noise come from the graphene layer itself rather than from the contacts. Aging of graphene transistors due to exposure to ambient for over a month resulted in substantially increased noise attributed to the decreasing mobility of graphene and increasing contact resistance. The noise spectral density in both single and bilayer graphene transistors either increased with deviation from the charge neutrality point or depended weakly on the gate bias. This observation confirms that the low-frequency noise characteristics of graphene transistors are qualitatively different from those of conventional silicon metal-oxide-semiconductor field-effect transistors.

cond-mat.mtrl-sci↗

arXiv2010

Lithography-free Fabrication of High Quality Substrate-supported and Freestanding Graphene devices

We present a lithography-free technique for fabrication of clean, high quality graphene devices. This technique is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes. We demonstrate that devices fabricated by this technique have significantly higher mobility values than those by standard electron beam lithography. To obtain ultra-high mobility devices, we extend this technique to fabricate suspended graphene samples with mobility as high as 120,000 cm^2/Vs.

cond-mat.mes-hall↗

arXiv2009

Low-noise top-gate graphene transistors

We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by 20 nm of HfO2 from the single-layer graphene channels. The measurements revealed low flicker noise levels with the normalized noise spectral density close to 1/f (f is the frequency) and Hooge parameter below 2 x 10^-3. The analysis of the noise spectral density dependence on the top and bottom gate biases helped us to elucidate the noise sources in these devices and develop a strategy for the electronic noise reduction. The obtained results are important for all proposed graphene applications in electronics and sensors.

cond-mat.mtrl-sci↗

arXiv2008

Flicker Noise in Bilayer Graphene Transistors

We present the results of the experimental investigation of the low - frequency noise in bilayer graphene transistors. The back - gated devices were fabricated using the electron beam lithography and evaporation. The charge neutrality point for the fabricated transistors was around 10 V. The noise spectra at frequencies above 10 - 100 Hz were of the 1/f - type with the spectral density on the order of 10E-23 - 10E-22 A2/Hz at the frequency of 1 kHz. The deviation from the 1/f spectrum at the frequencies below 10 -100 Hz indicates that the noise is of the carrier - number fluctuation origin due to the carrier trapping by defects. The Hooge parameter of 10E-4 was extracted for this type of devices. The gate dependence of the noise spectral density suggests that the noise is dominated by the contributions from the ungated part of the device channel and by the contacts. The obtained results are important for graphene electronic applications.

cond-mat.mtrl-sci↗

arXiv2008

Resistance Quenching in Graphene Interconnects

We investigated experimentally the high-temperature electrical resistance of graphene interconnects. The test structures were fabricated using the focused ion beam from the single and bi-layer graphene produced by mechanical exfoliation. It was found that as temperature increases from 300 to 500K the resistance of the single- and bi-layer graphene interconnects drops down by 30% and 70%, respectively. The quenching and temperature dependence of the resistance were explained by the thermal generation of the electron-hole pairs and acoustic phonon scattering. The obtained results are important for the proposed applications of graphene as interconnects in integrated circuits.

cond-mat.mtrl-sci↗

arXiv2008

Freely-suspended matrix-free metamaterials showing THz left-handed pass bands

Featuring dense spatial distributions of engineered metallic particles, electromagnetic metamaterials exhibit simultaneously negative values of both, dielectric permittivity and magnetic permeability, within a resonance frequency band called left-handed passband. Unusual electromagnetic properties are found resulting in promising applications such as sub-wavelength resolution imaging. State-of-the-art micro/nanomanufacturing has led to resonance frequencies reaching the visible red. The common embedding of the metal particles in plastic matrices or deposition on dielectric substrates within a small area severely limits the usefulness of the materials. Here, we use UV or X-ray lithography to build comparably large areas and quantities of the first freely-suspended matrix-free metamaterials in which the metallic structures are S-string-like with their ends held by a window-frame. In vacuo spectral characterization combined with simulation reveals left-handed passbands from 1.6 to 2.2 THz. Owing to their size, the devices can be easily handled. They offer a straightforward way of making them tunable and two-dimensionally isotropic.

cond-mat.mtrl-sci↗