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G. M. Jones

Publications and source records attributed to G. M. Jones.

2 recordsLinked to original sources

Observation of one electron charge in an enhancement-mode InAs single electron transistor at 4.2K

We propose and demonstrate experimentally a novel design of single-electron quantum dots. The structure consists of a narrow band gap quantum well that can undergo a transition from the hole accumulation regime to the electron inversion regime in a single-top-gate transistor configuration. We have observed large size quantization and Coulomb charging energies over 10meV. This quantum dot design can be especially important for scalable quantum computing.

cond-mat.other

Quantum steering of electron wave function in an InAs Y-branch switch

We report experiments on gated Y-branch switches made from InAs ballistic electron wave guides. We demonstrate that gating modifies the electron wave functions as well as their interference pattern, causing the anti-correlated, oscillatory transconductances. Such previously unexpected phenomenon provides evidence of steering the electron wave function in a multi-channel transistor structure.

cond-mat.mes-hall