SearcharxivSearch

arXiv subjects

G. Rietveld

Publications and source records attributed to G. Rietveld.

3 recordsLinked to original sources

Quantum resistance metrology in graphene

We have performed a metrological characterization of the quantum Hall resistance in a 1 $μ$m wide graphene Hall-bar. The longitudinal resistivity in the center of the $ν=\pm 2$ quantum Hall plateaus vanishes within the measurement noise of 20 m$Ω$ upto 2 $μ$A. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5$ μ$A current) equal to that in conventional semiconductors. The principal limitation of the present experiments are the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied.

cond-mat.mes-hall

Doping Dependence of the Chemical Potential in cuprate high T$_c$ superconductors II: (Bi,Pb)$_{2}$Sr$_{2}$Ca$_{2}$Cu$_{3}$% O$_{10+\mbox{\small\protect\boldmath $δ$}}$

Using X-ray photoelectron spectroscopy, a systematic study is performed of the doping dependence of the chemical potential $μ$ in two systems of (Bi,Pb)$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10+δ}$. The doping is varied by changing the O content of the sample. The measured shifts of the chemical potential are compared with present models for the doping behaviour of $μ$ in high-$T_{\rm c}$ materials. VSGD.94.6.3

cond-mat