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arXiv · 0810.4064

Quantum resistance metrology in graphene

A. J. M. Giesbers·G. Rietveld·E. Houtzager·U. Zeitler·R. Yang·K. S. Novoselov·A. K. Geim·J. C. Maan
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Abstract

We have performed a metrological characterization of the quantum Hall resistance in a 1 $μ$m wide graphene Hall-bar. The longitudinal resistivity in the center of the $ν=\pm 2$ quantum Hall plateaus vanishes within the measurement noise of 20 m$Ω$ upto 2 $μ$A. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5$ μ$A current) equal to that in conventional semiconductors. The principal limitation of the present experiments are the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied.

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A. J. M. Giesbers, G. Rietveld, E. Houtzager, U. Zeitler, R. Yang, K. S. Novoselov, A. K. Geim, J. C. Maan. 2008-10-22. Quantum resistance metrology in graphene. https://doi.org/10.1063/1.3043426

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