arXiv subjects

Gabriele D'Avino

Publications and source records attributed to Gabriele D'Avino.

16 recordsLinked to original sources

arXiv2026

A hidden bulk polymorph governs charge transport dimensionality in an organic semiconductor

Organic semiconductors (OSCs) are widely explored for flexible optoelectronic technologies, with performance governed not only by molecular design, but also by solid-state packing, which can give rise to polymorphism. Dinaphthothienothiophene (DNTT) is a benchmark OSC that has long been considered monomorphic. Here, we discover, isolate, and resolve the crystal structure of a previously unrecognised bulk polymorph of DNTT, termed blue DNTT owing to its characteristic blue emission. Coexisting with the well-known (green) DNTT in commercial powders, yet previously overlooked, blue DNTT represents the thermodynamically stable form. By combining X-ray diffraction, Raman, and THz spectroscopy with simulations, we demonstrate that polymorphism in DNTT reshapes the low-frequency phonon landscape and transfer-integral network, impacting charge transport. While green DNTT exhibits two-dimensional charge transport with holes more mobile than electrons, blue DNTT shows charge transport along all crystallographic directions enabled by a distinct herringbone packing. Electron mobility along the crystallographic a and b-axes in blue DNTT exceeds twice the hole mobility in the green phase. To our knowledge, this is the first reported acene-based semiconductor exhibiting three-dimensional charge transport. Polymorphism emerges as a key lever to tune charge transport dimensionality and carrier efficiency in organic semiconductors.

cond-mat.mtrl-sci↗

arXiv2025

Peak Broadening in Photoelectron Spectroscopy of Amorphous Polymers: the Leading Role of the Electrostatic Landscape

The broadening in photoelectron spectra of polymers can be attributed to several factors, such as light source spread, spectrometer resolution, finite lifetime of the hole state, and solid-state effects. Here, for the first time, we set up a computational protocol to assess the peak broadening induced for both core and valence levels by solid-state effects in four amorphous polymers by using a combination of density functional theory, many-body perturbation theory, and classical polarizable embedding. We show that intrinsic local inhomogeneities in the electrostatic environment induce a Gaussian broadening of $0.2$-$0.7$~eV in the binding energies of both core and semi-valence electrons, corresponding to a full width at half maximum (FWHM) of $0.5$-$1.7$~eV for the investigated systems. The induced broadening is larger in acrylate- than in styrene- based polymers, revealing the crucial role of polar groups in controlling the roughness of the electrostatic landscape in the solid matrix.

cond-mat.mtrl-sci↗

arXiv2025

Accurate and Efficient Phonon Calculations in Molecular Crystals via Minimal Molecular Displacements

Vibrational dynamics governs the fundamental properties of molecular crystals, shaping their thermodynamics, mechanics, spectroscopy, and transport phenomena. However desirable, the first-principles calculation of solid-state vibrations, i.e.\ phonons, stands as a major computational challenge in molecular crystals characterized by many atoms in the unit cell and by weak intermolecular interactions. Here we propose a formulation of the harmonic lattice dynamics based on a natural basis of molecular coordinates consisting of rigid-body displacements and intramolecular vibrations. This enables a sensible \emph{minimal molecular displacement} approximation for the calculation of the dynamical matrix, combining isolated molecule calculations with only a small number of expensive crystal supercell calculations, ultimately reducing the computational cost by up to a factor 10. The comparison with reference calculations demonstrates the quantitative accuracy of our method, especially for the challenging and dispersive low-frequency region it is designed for. Our method provides an excellent description of the thermodynamic properties and offers a privileged molecular-level insight into the complex phonons band structure of molecular materials.

cond-mat.mtrl-sci↗

arXiv2024

From many-body ab initio to effective excitonic models: a versatile mapping approach including environmental embedding effects

We present an original multi-state projective diabatization scheme based on the Green's function formalism that allows the systematic mapping of many-body ab initio calculations onto effective excitonic models. This method inherits the ability of the Bethe-Salpeter equation to describe Frenkel molecular excitons and intermolecular charge-transfer states equally well, as well as the possibility for an effective description of environmental effects in a QM/MM framework. The latter is found to be a crucial element in order to obtain accurate model parameters for condensed phases and to ensure their transferability to excitonic models for extended systems. The method is presented through a series of examples illustrating its quality, robustness, and internal consistency.

physics.chem-ph↗

arXiv2024

On the Role of Charge Transfer Excitations in Non-Fullerene Acceptors for Organic Photovoltaics

Through the development of new non-fullerene electron acceptor (NFA) materials, such as Y6 and its molecular derivatives, the power conversion efficiencies of organic photovoltaics (OPVs) have now exceeded 19%. However, despite this rapid progress, our fundamental understanding of the unique optical and electronic properties of these Y-series NFAs is lacking, and this currently limits progress in material design. In this work, we provide a detailed computational-experimental characterisation of the archetypal NFA, Y6. To explain the significant broadening and red shift of the absorption spectrum observed when moving from the solution phase to the solid state, we first rule out more typical causes, such as J-aggregation. Instead, by considering the role of charge transfer (CT) excitations and their mixing with Frenkel exciton (FE) states, we can computationally reproduce the experimental absorption spectra of Y6 with excellent accuracy. Using transient absorption spectroscopy, we provide evidence for this dense manifold of FE-CT hybrid electronic excitations in Y6 through the prominent sub-picosecond relaxation events following supra band gap excitation. Furthermore, through sub band gap excitation, we also find states with polaronic character in Y6 that are in a dynamic equilibrium with the FE-CT hybrid states. Magnetic resonance spectroscopies reveal that these polaronic states are polaron pairs, most likely located on neighbouring Y6 molecules, not free charge carriers, as has been previously suggested. Thus, this new understanding of how the solid-state packing motif directly controls the optical and electronic properties of Y-series NFAs opens the door to intelligently design NFA materials to further increase OPV performance.

cond-mat.mtrl-sci↗

arXiv2023

Electronic Polarization Effects in Core-Level Spectroscopy

In X-ray photoelectron spectroscopy (XPS), the injected hole interacts with the electronic polarization cloud induced by the hole itself, ultimately resulting in a lower binding energy. Such polarization effect can shift the core-level energy by more than 1 eV, as shown here by embedded many-body perturbation theory for the paradigmatic case of noble gas clusters made of Ar, Kr, or Xe. The polarization energy is almost identical for the different core-orbitals of a given atom, but it strongly depends on the position of the ionized atom in the cluster. An analytical formula is derived from classical continuum electrostatics, providing an effective and accurate description of polarization effects, which permits to achieve an excellent agreement with available experiments on noble gas clusters at a modest computational cost. Electronic polarization provides a crucial contribution to core levels absolute energies and chemical shifts.

cond-mat.mes-hall↗

arXiv2022

Structural order promotes efficient separation of delocalized charges at molecular heterojunctions

The energetic landscape at the interface between electron donating and accepting molecular materials favors efficient conversion of intermolecular charge-transfer states (CTS) into free charge carriers in high-performance organic solar cells. Here, we elucidate how interfacial energetics, charge generation and radiative recombination are affected by structural ordering. We experimentally determine the CTS binding energy of a series of model, small molecule donor-acceptor blends, where the used acceptors (B2PYMPM, B3PYMPM and B4PYMPM) differ only in the nitrogen position of their lateral pyridine rings. We find that the formation of an ordered, face-on molecular packing in B4PYMPM is beneficial to efficient, field-independent charge separation, leading to fill factors over 70% in photovoltaic devices. This is rationalized by a comprehensive computational protocol showing that, compared to the more amorphous and isotropically oriented B2PYMPM, the higher order of the B4PYMPM molecules provides more delocalized CTS. Furthermore, we find no correlation between the quantum efficiency of radiative free charge carrier recombination and the bound or unbound nature of the CTS. This work highlights the importance of structural ordering at donor-acceptor interfaces for efficient free carrier generation and shows that more ordering and less bound CT states do not preclude efficient radiative recombination.

physics.app-ph↗

arXiv2022

Universal polarization energies for defects in monolayer, surface and bulk hexagonal boron nitride : A finite-size fragments GW approach

We study defect energy levels in hexagonal boron-nitride with varying number of layers using a fragment many-body $GW$ formalism, taking as examples the paradigmatic carbon-dimer and $C_BV_N$ defects. We show that a single layer can be fragmented in polarizable finite-size areas reproducing faithfully the effect of the dielectric environment, dramatically facilitating the study at the many-body level of point defects in the dilute limit. The evolution of defect energy levels from the monolayer to a $n$-layer system due to increased screening, labeled polarization energies, follow a simple $({ΔP}/n + P_{\infty})$ behavior. The coefficients $ΔP$ and $P_{\infty}$ are found to be close-to-universal, with opposite signs for holes and electrons, characterizing mainly the host and the position of the defect (surface or bulk), but hardly the defect type. Our results rationalize the evolution of defect energy levels with layers number, allowing to safely extrapolate results obtained for the monolayer to few-layers, surface or bulk \textit{h}-BN. The present many-body fragment approach further opens the door to studying disordered 2D layers.

cond-mat.mtrl-sci↗

arXiv2021

Structural and dynamic disorder, not ionic trapping, controls charge transport in highly doped conducting polymers

Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily from charge trapping by the Coulomb potentials of the dopant counter-ions. Here, we present a combined experimental and theoretical study rebutting this belief. Using a newly developed doping technique, we find the conductivity of several classes of high-mobility conjugated polymers to be strongly correlated with paracrystalline disorder but poorly correlated with ionic size, suggesting that Coulomb traps do not limit transport. A general model for interacting electrons in highly doped polymers is proposed and carefully parameterized against atomistic calculations, enabling the calculation of electrical conductivity within the framework of transient localisation theory. Theoretical calculations are in excellent agreement with experimental data, providing insights into the disordered-limited nature of charge transport and suggesting new strategies to further improve conductivities.

cond-mat.mtrl-sci↗

arXiv2021

Doping-induced dielectric catastrophe prompts free-carrier release in organic semiconductors

The control over material properties attainable through molecular doping is essential to many technological applications of organic semiconductors, such as OLED or thermoelectrics. These excitonic semiconductors typically reach the degenerate limit only at impurity concentrations of 5-10\%, a phenomenon that has been put in relation to the strong Coulomb binding between charge carriers and ionized dopants, and whose comprehension remained elusive so far. This study proposes a general mechanism for the release of carriers at finite doping in terms of collective screening phenomena. A multiscale model for the dielectric properties of doped organic semiconductor is set up by combining first principles and microelectrostatic calculations. Our results predict a large nonlinear enhancement of the dielectric constant (ten-fold at 8\% load) as the system approaches a dielectric instability (catastrophe) upon increasing doping. This can be attributed to the presence of highly polarizable host-dopant complexes, plus a nontrivial leading contribution from dipolar interactions in the disordered and heterogeneous system. The enhanced screening in the material drastically reduces the (free) energy barriers for electron-hole separation, rationalizing the possibility for thermal charge release. The proposed mechanism is consistent with conductivity data and sets the basis for achieving higher conductivities at lower doping loads.

cond-mat.mtrl-sci↗

arXiv2021

Analysis of external and internal disorder to understand band-like transport in n-type organic semiconductors

Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e. related to the interactions with the dielectric layer), especially for n-type materials. Internal dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge carriers. The molecular vibrations that drive transient localization typically operate at low-frequency (< a-few-hundred cm-1), which renders it difficult to assess them experimentally. Hitherto, this has prevented the identification of clear molecular design rules to control and reduce dynamic disorder. In addition, the disorder can also be external, being controlled by the gate insulator dielectric properties. Here we report on a comprehensive study of charge transport in two closely related n-type molecular organic semiconductors using a combination of temperature-dependent inelastic neutron scattering and photoelectron spectroscopy corroborated by electrical measurements, theory and simulations. We provide unambiguous evidence that ad hoc molecular design enables to free the electron charge carriers from both internal and external disorder to ultimately reach band-like electron transport.

cond-mat.mtrl-sci↗

arXiv2019

Chasing the killer phonon mode for the rational design of low disorder, high mobility molecular semiconductors

Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron-phonon coupling and ensuing thermal energetic disorder in some of the most widely studied high mobility molecular semiconductors, state-of-the-art quantum mechanical simulations of the vibrational modes and the ensuing electron phonon coupling constants are combined with experimental measurements of the low-frequency vibrations using inelastic neutron scattering and terahertz time-domain spectroscopy. In this way, the long-axis sliding motion is identified as a killer phonon mode, which in some molecules contributes more than 80% to the total thermal disorder. Based on this insight, a way to rationalize mobility trends between different materials and derive important molecular design guidelines for new high mobility molecular semiconductors is suggested.

cond-mat.mtrl-sci↗

arXiv2018

Accurate description of charged excitations in molecular solids from embedded many-body perturbation theory

We present a novel hybrid quantum/classical (QM/MM) approach to the calculation of charged excitations in molecular solids based on the many-body Green's function $GW$ formalism. Molecules described at the $GW$ level are embedded into the crystalline environment modeled with an accurate classical polarizable scheme. This allows the calculation of electron addition and removal energies in the bulk and at crystal surfaces where charged excitations are probed in photoelectron experiments. By considering the paradigmatic case of pentacene and perfluoropentacene crystals, we discuss the different contributions from intermolecular interactions to electronic energy levels, distinguishing between polarization, which is accounted for combining quantum and classical polarizabilities, and crystal field effects, that can impact energy levels by up to $\pm0.6$ eV. After introducing band dispersion, we achieve quantitative agreement (within 0.2 eV) on the ionization potential and electron affinity measured at pentacene and perfluoropentacene crystal surfaces characterized by standing molecules.

physics.chem-ph↗

arXiv2017

Correlated electron-hole mechanism for molecular doping in organic semiconductors

The electronic and optical properties of the paradigmatic F4TCNQ-doped pentacene in the low-doping limit are investigated by a combination of state-of-the-art many-body \emph{ab initio} methods accounting for environmental screening effects, and a carefully parametrized model Hamiltonian. We demonstrate that while the acceptor level lies very deep in the gap, the inclusion of electron-hole interactions strongly stabilizes dopant-semiconductor charge transfer states and, together with spin statistics and structural relaxation effects, rationalize the possibility for room-temperature dopant ionization. Our findings reconcile available experimental data, shedding light on the partial vs. full charge transfer scenario discussed in the literature, and question the relevance of the standard classification in shallow or deep impurity levels prevailing for inorganic semiconductors.

cond-mat.mtrl-sci↗

arXiv2014

On the room temperature ferroelectricity of hydrogen-bonded charge transfer crystals

We present a theoretical investigation of the anomalous ferroelectricity of mixed-stack charge transfer molecular crystals, based on the Peierls-Hubbard model, and first principles calculations for its parameterization. This approach is first validated by reproducing the temperature-induced transition and the electronic polarization of TTF-CA, and then applied to a novel series of hydrogen-bonded crystals, for which room temperature ferroelectricity has recently been claimed. Our analysis shows that the hydrogen-bonded systems present a very low degree of charge transfer and hence support a very small polarization. A critical re-examination of experimental data supports our findings, shedding doubts on the ferroelectricity of these systems. More generally, our modelling allows the rationalization of general features of the ferroelectric transition in charge transfer crystals, and suggests design principles for materials optimization.

cond-mat.mtrl-sci↗

arXiv2007

Anomalous dispersion of optical phonons at the neutral-ionic transition: Evidence from diffuse X-ray scattering

Diffuse X-ray data for mixed stack organic charge-transfer crystals approaching the neutral-ionic phase transition can be quantitatively explained as due to the softening of the optical phonon branch. The interpretation is fully consistent with vibrational spectra, and underlines the importance of electron-phonon coupling in low-dimensional systems with delocalized electrons.

cond-mat.str-el↗