arXiv subjects

Gang Cao

Publications and source records attributed to Gang Cao.

179 records · Page 10Linked to original sources

arXiv2013

Particle Acceleration And Emission Processes In Mrk 421

We investigate the X-ray and $γ$-ray flares of Mrk 421 on 2008 June 6-15 using the synchrotron self- Compton(SSC) model with electron acceleration, in which an evident correlation between the X-ray and $γ$-ray bands appears, while no significant correlation between the optical and X-ray band is observed. We argue that the emission from Mrk 421 may originate from two different components. One is the steady component from the outer region that is mainly attributed to the optical band, in which the electrons are accelerated by first-order Fermi acceleration mechanism. We use a steady electron spectrum to produce the synchrotron self-Compton emission. The other is the variable component from the inner region, in which the electrons are accelerated by the stochastic acceleration process. We use the time-dependent SSC model to produce the emission from the variable component. We suggest that the flares are due to the hardening of the electron spectrum under the process of the stochastic acceleration, which leads to the hardening of the observed spectrum in the X-ray and $γ$-ray bands. Furthermore, we find that the energy densities of electrons and magnetic fields are near equipartition in both jet regions.

astro-ph.HE↗

arXiv2013

Detection and measurement of spin-dependent dynamics in random telegraph signals

A quantum point contact was used to observe single-electron fluctuations of a quantum dot in a GaAs heterostructure. The resulting random telegraph signals (RTS) contain statistical information about the electron spin state if the tunneling dynamics are spin-dependent. We develop a statistical method to extract information about spin-dependent dynamics from RTS and use it to demonstrate that these dynamics can be studied in the thermal energy regime. The tunneling rates of each spin state are independently measured in a finite external magnetic field. We confirm previous findings of a decrease in overall tunneling rates for the spin excited state compared to the ground state as an external magnetic field is increased.

cond-mat.mes-hall↗

arXiv2013

Symmetric reflection line resonator for semiconductor circuit quantum electrodynamics

We have designed and fabricated a half-wavelength reflection line resonator (RLR) that consists of a pair of two coupled microstrip lines on a GaAs/AlGaAs heterostructure. By changing the top gate voltage on a square of two dimensional electron gas under the resonator, a large range of the quality factors can be obtained. Energy loss in the two-dimensional electron gas can be minimized, thus realizing a versatile resonator suitable for integration with semiconductor quantum circuits.

cond-mat.mes-hall↗

arXiv2013

Photon-assisted-tunneling in a coupled double quantum dot out of thermal equilibrium

We perform photon-assisted-tunneling (PAT) experiments on a GaAs double quantum dot device under high microwave excitation power. Photon-assisted absorption of up to 14 photons is observed, when electron temperature (>1K) are far above the lattice temperature. Signatures of Landau-Zener-Stückelberg (LZS) interference are found even in this non-equilibrium PAT spectrum. In addition, the charge state relaxation time T_1~8ns measured in this out of thermal equilibrium double quantum dot is in agreement with other previous reports.

cond-mat.mes-hall↗

arXiv2013

Tuning inter-dot tunnel coupling of an etched graphene double quantum dot by adjacent metal gates

Graphene double quantum open the possibility to use charge or spin degrees of freedom for storing and manipulating quantum information in this new electronic material. However, impurities and edge disorders in etched graphene nano-structures hinder the ability to control the inter-dot tunnel coupling, tc,the most important property of the artificial molecule. Here we report measurements of tc in an all-metal-gates-tuned graphene DQD. We find that tc can be controlled continuously about a factor of four by employing a single gate. Furthermore, tc, can be changed monotonically about another factor of four as electrons are gate-pumped into the dot one by one. The results suggest that the strength of tunnel coupling in etched DQDs can be varied in a rather broad range and in a controllable manner, which improves the outlook to use graphene as a base material for qubit applications.

cond-mat.mes-hall↗

arXiv2013

Single Crystal Growth, Transport, and Electronic Band Structure of YCoGa$_5$

Single crystal of YCoGa5 has been grown via Ga self-flux. In this paper, we report the single crystal growth, crystallographic parameters, resistivity, heat capacity, and band structure results of YCoGa5. YCoGa5 accommodates the HoCoGa5 type structure (space group P4/mmm (No. 123), Z = 1, a = 4.2131(6) A, c = 6.7929(13) A, which is isostructural to the extensively studied heavy fermion superconductor system CeMIn5 (M = Co, Rh, Ir) and the unconventional superconductor PuCoGa5 with Tc = 18.5 K. No superconductivity is observed down to 1.75 K. Band structure calculation results show that its band at the Fermi level is mainly composed of Co-3d and Ga-4p electrons states, which explains its similarity of physical properties to YbCoGa5 and LuCoGa5.

cond-mat.supr-con↗

arXiv2013

Direct observation of the Mott gap in strontium iridate with a scanning tunneling microscope

The single-layer Mott insulator strontium iridate Sr$_2$IrO$_4$ was studied using a scanning tunneling microscope. This measurement technique is unique due to the transport properties of this Mott insulator allowing tunneling measurements to be performed, even at cryogenic temperatures. We obtained high-resolution images of the sample surface and the differential tunneling conductance at different cryogenic temperatures. The differential conductance is a direct measurement of the local electronic density of states which provided an insulating gap consistent with optical conductivity, angle resolved photoemission spectroscopy and resonant inelastic x-ray scattering (RIXS) experiments. The observed widths of these features is broader than predicted by the Slater approximation and narrower than predicted by dynamical mean field theory. Additionally, the observed density of states due to magnetic fluctuations is found in the derivative of the differential conductance and is consistent with results from Raman scattering and RIXS. At low temperatures, additional low-energy features were observed, suggesting a change in the dispersion of the collective magnetic excitations, which is consistent with the magnetic susceptibility.

cond-mat.str-el↗

arXiv2012

Electron Number Dependence of Spin Triplet-Singlet Relaxation Time

In a GaAs single quantum dot, the relaxation time T_{1} between spin triplet and singlet states has been measured for the last few even number of electrons. The singlet-triplet energy separation E_{ST} is tuned as a control parameter for the comparison of T_{1} between different electron numbers. T_{1} shows a steady decrease from 2-electrons, 4-electrons, to 6-electrons, and we found this implies an enhancement of the spin-orbital coupling strength in a multi-electron quantum dot.

cond-mat.mes-hall↗

arXiv2011

Electron Spin Excited States Spectroscopy in a Quantum Dot Probed by QPC Back-action

The quantum point contact (QPC) back-action has been found to cause non-thermal-equilibrium excitations to the electron spin states in a quantum dot (QD). Here we use back-action as an excitation source to probe the spin excited states spectroscopy for both the odd and even electron numbers under a varying parallel magnetic field. For a single electron, we observed the Zeeman splitting. For two electrons, we observed the splitting of the spin triplet states $|T^{+}>$ and $|T^{0}>$ and found that back-action drives the singlet state $|S>$ overwhelmingly to $|T^{+}>$ other than $|T^{0}>$. All these information were revealed through the real-time charge counting statistics.

cond-mat.mes-hall↗

arXiv2011

Back-action Driven Electron Spin Singlet-Triplet Excitation in a GaAs Quantum Dot

In a single quantum dot (QD), the electrons were driven out of thermal equilibrium by the back-action from a nearby quantum point contact (QPC). We found the driving to energy excited states can be probed with the random telegraph signal (RTS) statistics, when the excited states relax slowly compared with RTS tunneling rate. We studied the last few electrons, and found back-action driven spin singlet-triplet (S-T) excitation for and only for all the even number of electrons. We developed a phenomenological model to quantitatively characterize the spin S-T excitation rate, which enabled us to evaluate the influence of back-action on spin S-T based qubit operations.

cond-mat.mes-hall↗

arXiv2011

Back-action Induced Non-equilibrium Effect in Electron Charge Counting Statistics

We report our study of the real-time charge counting statistics measured by a quantum point contact (QPC) coupled to a single quantum dot (QD) under different back-action strength. By tuning the QD-QPC coupling or QPC bias, we controlled the QPC back-action which drives the QD electrons out of thermal equilibrium. The random telegraph signal (RTS) statistics showed strong and tunable non-thermal-equilibrium saturation effect, which can be quantitatively characterized as a back-action induced tunneling out rate. We found that the QD-QPC coupling and QPC bias voltage played different roles on the back-action strength and cut-off energy.

cond-mat.mes-hall↗

arXiv2011

Gates controlled parallel-coupled double quantum dot on both single layer and bilayer graphene

Here we report the fabrication and quantum transport measurements of gates controlled parallel-coupled double quantum dot on both bilayer and single layer graphene. It is shown that the interdot coupling strength of the parallel double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the graphene parallel-coupled double dot can be extracted from the honeycomb charge stability diagrams revealed through the transport measurements.

quant-ph↗

arXiv2010

Tomography of the two-electron spin qubits in semiconductors

We propose an approach to reconstruct two-electron spin qubit states in semiconductor quantum dots by employing tomographic techniques. This procedure exploits the combination of fast gate operations on electron spins trapped in dots and dynamical nuclear polarization of the underlying Ga and As nuclei. The presented method can be an important tool in solid state quantum computation for complete characterization of qubit states and theirs correlations.

quant-ph↗

arXiv2010

A Graphene Quantum Dot with a Single Electron Transistor as Integrated Charge Sensor

We have developed an etching process to fabricate a quantum dot and a nearby single electron transistor as a charge detector in a single layer graphene. The high charge sensitivity of the detector is used to probe Coulomb diamonds as well as excited spectrum in the dot, even in the regime where the current through the quantum dot is too small to be measured by conventional transport means. The graphene based quantum dot and integrated charge sensor serve as an essential building block to form a solid-state qubit in a nuclear-spin-free quantum world.

cond-mat.mes-hall↗

arXiv2010

Strong and Tunable Spin-Orbit Coupling of One-Dimensional Holes in Ge/Si Core/Shell Nanowires

We investigate the low-temperature magneto-transport properties of individual Ge/Si core/shell nanowires. Negative magneto-conductance was observed, which is a signature of one-dimensional weak antilocalization of holes in the presence of strong spin-orbit coupling. The temperature and back gate dependences of phase coherence length, spin-orbit relaxation time, and background conductance were studied. Specifically, we show the spin-orbit coupling strength can be modulated by more than five folds with an external electric field. These results suggest the Ge/Si nanowire system possesses strong and tunable spin-orbit interactions and may serve as a candidate for spintronics applications.

cond-mat.mes-hall↗

arXiv2010

Andreev reflection enhanced single hole tunneling in Ge/Si core/shell nanowire quantum dot

We experimentally study the electrical transport properties of Ge/Si core/shell nanowire device with two superconducting leads in the Coulomb blockade regime. Anomalous zero field magnetoconductance peaks are observed for the first time at the gate voltages where Coulomb blockade oscillation peaks present. Many evidences indicate this feature is due to Andreev reflection enhanced phase coherent single hole tunneling through the quantum dot, which can be suppressed by an external magnetic field without destroying the superconducting states in the electrodes.

cond-mat.mes-hall↗

arXiv2003

Effects of hydrostatic pressure on the magnetic susceptibility of ruthenium oxide Sr3Ru2O7: Evidence for pressure-enhanced antiferromagnetic instability

Hydrostatic pressure effects on the temperature- and magnetic field dependencies of the in-plane and out-of-plane magnetization of the bi-layered perovskite Sr3Ru2O7 have been studied by SQUID magnetometer measurements under a hydrostatic helium-gas pressure. The anomalously enhanced low-temperature value of the paramagnetic susceptibility has been found to systematically decrease with increasing pressure. The effect is accompanied by an increase of the temperature Tmax of a pronounced peak of susceptibility. Thus, magnetization measurements under hydrostatic pressure reveal that the lattice contraction in the structure of Sr3Ru2O7 promotes antiferromagnetism and not ferromagnetism, contrary to the previous beliefs. The effects can be explained by the enhancement of the inter-bi-layer antiferromagnetic spin coupling, driven by the shortening of the superexchange path, and suppression, due to the band-broadening effect, of competing itinerant ferromagnetic correlations.

cond-mat.mtrl-sci↗