arXiv subjects

Gang Cao

Publications and source records attributed to Gang Cao.

At least 163 records · Page 9Linked to original sources

arXiv2015

Temperature dependence of Coulomb oscillations in a few-layer two-dimensional WS2 quantum dot

Standard semiconductor fabrication techniques are used to fabricate a quantum dot (QD) made of WS2, where Coulomb oscillations were found. The full-width-at-half-maximum of the Coulomb peaks increases linearly with temperature while the height of the peaks remains almost independent of temperature, which is consistent with standard semiconductor QD theory. Unlike graphene etched QDs, where Coulomb peaks belonging to the same QD can have different temperature dependences, these results indicate the absence of the disordered confining potential. This difference in the potential-forming mechanism between graphene etched QDs and WS2 QDs may be the reason for the larger potential fluctuation found in graphene QDs.

cond-mat.mes-hall↗

arXiv2015

A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2

Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined quantum dots (QDs) can be achieved on TMDCs. Here, standard semiconductor fabrication techniques are used to demonstrate quantum confined structures on WSe2 with tunnel barriers defined by electric fields, thereby eliminating the edge states induced by etching steps, which commonly appear in gapless graphene QDs. Over 40 consecutive Coulomb diamonds with a charging energy of approximately 2 meV were observed, showing the formation of a QD, which is consistent with the simulations. The size of the QD could be tuned over a factor of 2 by changing the voltages applied to the top gates. These results shed light on quantum nano-devices on TMDCs for further researches.

cond-mat.mes-hall↗

arXiv2015

High-energy electronic excitations in Sr$_2$IrO$_4$ observed by Raman scattering

Spin-orbit interaction in Sr$_2$IrO$_4$ leads to the realization of the $J_{\mathrm{eff}}$ = 1/2 state and also induces an insulating behavior. Using large-shift Raman spectroscopy, we found two high-energy excitations of the d-shell multipletat at 690 meV and 680 meV with $A_{1g}$ and $B_{1g}$ symmetry respectively. As temperature decreases, the $A_{1g}$ and $B_{1g}$ peaks narrow, and the $A_{1g}$ peak shifts to higher energy while the energy of the $B_{1g}$ peak remains the same. When 25$\%$ of Ir is substituted with Rh the $A_{1g}$ peak softens by 10$\%$ but the $B_{1g}$ peak does not. We show that both pseudospin-flip and non-pseudosin-flip dd electronic transitions are Raman active, but only the latter are observed.

cond-mat.str-el↗

arXiv2015

Electrically Tunable Band Gap in Antiferromagnetic Mott Insulator Sr2IrO4

The electronic band gap in conventional semiconductor materials, such as silicon, is fixed by the material's crystal structure and chemical composition. The gap defines the material's transport and optical properties and is of great importance for performance of semiconductor devices like diodes, transistors and lasers. The ability to tune its value would allow enhanced functionality and flexibility of future electronic and optical devices. Recently, an electrically tunable band gap was realized in a 2D material - electronically gated bilayer graphene [1-3]. Here we demonstrate the realization of an electrically tunable band gap in a 3D antiferromagnetic Mott insulator Sr2IrO4. Using nano-scale contacts between a sharpened Cu tip and a single crystal of Sr2IrO4, we apply a variable external electric field up to a few MV/m and demonstrate a continuous reduction in the band gap of Sr2IrO4 by as much as 16%. We further demonstrate the feasibility of reversible resistive switching and electrically tunable anisotropic magnetoresistance,which provide evidence of correlations between electronic transport, magnetic order, and orbital states in this 5d oxide. Our findings suggest a promising path towards band gap engineering in 5d transition-metal oxides that could potentially lead to appealing technical solutions for next-generation electronic devices.

cond-mat.mes-hall↗

arXiv2015

Confinement-Deconfinement Transition as an Indication of Spin-Liquid-Type Behavior in Na$_2$IrO$_3$

We use ultrafast optical spectroscopy to observe binding of charged single-particle excitations (SE) in the magnetically frustrated Mott insulator Na$_2$IrO$_3$. Above the antiferromagnetic ordering temperature ($T_N$) the system response is due to both Hubbard excitons (HE) and their constituent unpaired SE. The SE response becomes strongly suppressed immediately below $T_N$. We argue that this increase in binding energy is due to a unique interplay between the frustrated Kitaev and the weak Heisenberg-type ordering term in the Hamiltonian, mediating an effective interaction between the spin-singlet SE. This interaction grows with distance causing the SE to become trapped in the HE, similar to quark confinement inside hadrons. This binding of charged particles, induced by magnetic ordering, is a result of a confinement-deconfinement transition of spin excitations. This observation provides evidence for spin liquid type behavior which is expected in Na$_2$IrO$_3$.

cond-mat.str-el↗

arXiv2015

Anomalous High-Energy Waterfall-Like Electronic Structure in 5d Transition Metal Oxide Sr2IrO4 with a Strong Spin-Orbit Coupling

The layered 5d transition metal oxides like Sr2IrO4 have attracted significant interest recently due to a number of exotic and new phenomena induced by the interplay between the spin-orbit coupling, bandwidth W and on-site Coulomb correlation U. In contrast to a metallic behavior expected from the Mott-Hubbard model due to more spatially extended 5d orbitals and moderate U, an insulating ground state has been observed in Sr2IrO4. Such an insulating behavior can be understood by an effective J_eff=1/2 Mott insulator model by incorporating both electron correlation and strong spin-orbital coupling, although its validity remains under debate at present. In particular, Sr2IrO4 exhibits a number of similarities to the high temperature cuprate superconductors in the crystal structure, electronic structure, magnetic structure, and even possible high temperature superconductivity. Here we report a new observation of the anomalous high energy electronic structure in Sr2IrO4. By taking high-resolution angle-resolved photoemission measurements on Sr2IrO4 over a wide energy range, we have revealed that the high energy electronic structures show unusual nearly-vertical bands that extend over a large energy range. Such anomalous high energy behaviors resemble the high energy waterfall features observed in the cuprate superconductors, adding one more important similarity between these two systems. While strong electron correlation plays an important role in producing high energy waterfall features in the cuprate superconductors, the revelation of the high energy anomalies in Sr2IrO4 points to a novel route in generating exotic electronic excitations from the strong spin-orbit coupling and a moderate electron correlation.

cond-mat.str-el↗

arXiv2014

Introduction of DC line structures into a superconducting microwave 3D cavity

We report a technique that can noninvasively add multiple DC wires into a 3D superconducting microwave cavity for electronic devices that require DC electrical terminals. We studied the influence of our DC lines on the cavity performance systematically. We found that the quality factor of the cavity is reduced if any of the components of the electrical wires cross the cavity equipotential planes. Using this technique, we were able to incorporate a quantum dot (QD) device into a 3D cavity. We then controlled and measured the QD transport signal using the DC lines. We have also studied the heating effects of the QD by the microwave photons in the cavity.

cond-mat.mes-hall↗

arXiv2014

Controlled-Not Quantum Logic Gate in Two Strongly Coupled Semiconductor Charge Qubits

A crucial requirement for scalable quantum-information processing is the realization of multiple-qubit quantum gates. Universal multiple-qubit gates can be implemented by a set of universal single qubit gates and any one kind of two-qubit gate, such as a controlled-NOT (CNOT) gate. Semiconductor quantum dot qubits are a leading approach for the physical implementation of quantum computation, due to their potential for large-scale integration. Two-qubit gate operations have been so far only demonstrated in individual electron spin-based quantum dot systems. Due to the relatively short de-coherence time, charge qubits in quantum dots are generally considered to be inferior for going beyond single qubit level. Here, we demonstrate the benchmarking CNOT gate in two capacitively coupled charge qubits, each consisting of an electron confined in a GaAs/AlGaAs double quantum dot. Owing to the strong inter-qubit coupling strength, gate operations with a clock speed up to 5GHz has been realized. A processing tomography shows encouragingly that the universal two-qubit gate operations have comparable fidelities to that of spin-based two-qubit gates. Our results suggest that semiconductor charge qubits have a considerable potential for scalable quantum computing and may stimulate the use of long-range Coulomb interaction for coherent quantum control in other devices.

quant-ph↗

arXiv2014

Observation of metallic surface states in the strongly correlated Kitaev-Heisenberg candidate Na2IrO3

We report high-resolution angle-resolved photoemission spectroscopy measurements on the honeycomb iridate Na2IrO3. Our measurements reveal the existence of a metallic surface band feature crossing the Fermi level with nearly linear dispersion and an estimated surface carrier density of 3.2 $\times$ 10$^{13}$ cm$^{-2}$, which has not been theoretically predicted or experimentally observed, and provides the first evidence for metallic behavior on the boundary of this material, whereas the bulk bands exhibit a robust insulating gap. We further show the lack of theoretically predicted Dirac cones at the $\overline{M}$ points of the surface Brillouin zone, which confirms the absence of a stacked quantum spin Hall phase in this material. Our data indicates that the surface ground state of this material is exotic and metallic, unlike as predicted in theory, and establishes Na2IrO3 as a rare example of a strongly correlated spin-orbit insulator with surface metallicity.

cond-mat.str-el↗

arXiv2014

Coupling two distant double quantum dots to a microwave resonator

With recent advances in the circuit quantum electrodynamics (cQED) architecture, hybrid systems that couple nano-devices to microwave resonators have been developing rapidly. Here we report an experimental demonstration of two graphene double quantum dots (DQDs) coupled over a distance of up to 60 μm, through a microwave resonator. We jointly measure the two DQDs' coupling to the resonator, which causes a nonlinear response in the resonator reflection amplitude in the vicinity of the degeneracy points of the two DQDs. This phenomenon is explained by the Tavis-Cummings (T-C) mode. We further characterize this nonlocal coupling by measuring the correlation between the DC currents in the two DQDs. This correlation is observed to be strongly dependent on the average photon number in the resonator. Our results explore T-C physics in electronic transport, and also contribute to the study of nonlocal transport and future implementations of remote electronic entanglement.

cond-mat.mes-hall↗

arXiv2014

Anisotropic magnetoresistance in antiferromagnetic Sr2IrO4

We report point-contact measurements of anisotropic magnetoresistance (AMR) in a single crystal of antiferromagnetic (AFM) Mott insulator Sr2IrO4. The point-contact technique is used here as a local probe of magnetotransport properties on the nanoscale. The measurements at liquid nitrogen temperature revealed negative magnetoresistances (MRs) (up to 28%) for modest magnetic fields (250 mT) applied within the IrO2 a-b plane and electric currents flowing perpendicular to the plane. The angular dependence of MR shows a crossover from four-fold to two-fold symmetry in response to an increasing magnetic field with angular variations in resistance from 1-14%. We tentatively attribute the four-fold symmetry to the crystalline component of AMR and the field-induced transition to the effects of applied field on the canting of AFM-coupled moments in Sr2IrO4. The observed AMR is very large compared to the crystalline AMRs in 3d transition metal alloys/oxides (0.1-0.5%) and can be associated with the large spin-orbit interactions in this 5d oxide while the transition provides evidence of correlations between electronic transport, magnetic order and orbital states. The finding of this work opens an entirely new avenue to not only gain a new insight into physics associated with spin-orbit coupling but also better harness the power of spintronics in a more technically favorable fashion.

cond-mat.mes-hall↗

arXiv2014

Local density of states study of a spin-orbit-coupling induced Mott insulator Sr$_2$IrO$_4$

We present scanning tunneling microscopy and spectroscopy experiments on the novel J_eff = 1/2 Mott insulator Sr2IrO4. Local density of states (LDOS) measurements show an intrinsic insulating gap of 620 meV that is asymmetric about the Fermi level and is larger than previously reported values. The size of this gap suggests that Sr2IrO4 is likely a Mott rather than Slater insulator. In addition, we found a small number of native defects which create in-gap spectral weight. Atomically resolved LDOS measurements on and off the defects shows that this energy gap is quite fragile. Together the extended nature of the 5d electrons and poor screening of defects help explain the elusive nature of this gap.

cond-mat.str-el↗

arXiv2014

Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device

We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double quantum dot can be tuned to a few-electron region. Additionally, the inter-dot coupling of the double quantum dot can be tuned to a large extent according to the voltage on the middle gate. The quantum dot is shown to be tunable from a single dot to a well-isolated double dot. To assess the stability of such design, the potential fluctuation induced by 1/f noise was measured. Based on the findings herein, the quantum dot design developed in the undoped GaAs/AlGaAs semiconductor shows potential for the future exploitation of nano-devices.

cond-mat.mes-hall↗

arXiv2014

Hallmarks of the Mott-Metal Crossover in the Hole Doped J=1/2 Mott insulator Sr2IrO4

The physics of doped Mott insulators remains controversial after decades of active research, hindered by the interplay among possible competing orders and fluctuations. It is thus highly desired to distinguish the intrinsic characters of the Mott-metal crossover from those of other origins. We investigate the evolution of electronic structure and dynamics of the hole-doped J=1/2 Mott insulator Sr2IrO4. The effective hole doping is achieved by replacing Ir with Rh atoms, with the chemical potential immediately jumping to or near the top of the lower Hubbard band. The doped iridates exhibit multiple exotic features previously observed in doped cuprates - pseudogaps, Fermi "arcs", and marginal-Fermi-liquid-like electronic scattering rates, despite different mechanisms that forbid electron double-occupancy. We argue these universal features of the Mott-metal crossover are not related to preformed electron pairing, quantum criticality or density-wave formation as most commonly discussed. Instead, short-range antiferromagnetic correlations may play an indispensible role.

cond-mat.str-el↗

arXiv2014

The hadronic origin of hard gamma-ray spectrum from blazar 1ES 1101-232

The very hard $γ$-ray spectrum from distant blazars challenges the traditional synchrotron self-Compton (SSC) model, which may indicate that there is the contribution of an additional high-energy component beyond the SSC emission. In this paper, we study the possible origin of the hard $γ$-ray spectrum from distant blazars. We develop a model to explain the hard $γ$-ray spectrum from blazar 1ES 1101-232. In the model, the optical and X-ray radiation would come from the synchrotron radiation of primary electrons and secondary pairs, the GeV emission would be produced by the SSC process, however, the hard $γ$-ray spectrum would originate from the decay of neutral pion produced through proton-photon interactions with the synchrotron radiation photons within the jet. Our model can explain the observed SED of 1ES 1101-232 well, especially the very hard $γ$-ray spectrum. However, our model requires the very large proton power to efficiently produce the $γ$-ray through proton-photon interactions.

astro-ph.HE↗

arXiv2014

Ultrafast Manipulation of a Double Quantum Dot via Lyapunov Control Method

For a double quantum dot (DQD) system, here we propose alternative ultrafast manipulate approach: Lyapunov control method, to transfer the state from R to L on the picosecond scale, orders of magnitude faster and transfer probability higher than the previously measured electrically controlled charge- or spin-based quits. The control laws are composed of two-direction components, one is used to eliminate the dissipation in the system, another is used to transfer the state. The control theory's stability ensures the system can be transferred to the target state in high probability, and the coefficients in control laws leads very fast convergence. The role of eliminating the dissipation plays the suppression of decoherence effect. Numerical simulation results show that under the realistic implementation conditions, the transfer probability and fidelity can be increased up to 98.79% and 98.97%, respectively. This is the first result directly applicable to a DQD system's state transferring using the Lyapunov control method. We also give specific experimental realization scheme.

quant-ph↗

arXiv2013

Observation of Kondo Effect in a Quadruple Quantum Dots

We investigate the Kondo effect in a quadruple quantum dot device of coupled-double quantum dots (DQDs), which simultaneously contains intra-DQDs and inter-DQDs coupling. A variety of novel behaviors are observed. The differential conductance dI/dV is measured in the upper DQDs as a function of source drain bias. It is found to exhibit multiple peaks, including a zero-bias peak, where the number of peaks exceeds five. Alternatively, tuning the lower DQDs yielded regions of four peaks. In addition, a Kondo-effect switcher is demonstrated, using the lower DQDs as the controller.

cond-mat.mes-hall↗

arXiv2013

On the location of the gamma-ray emission region for 21 flat spectrum radio quasars with quasi-simultaneous observations

We try to infer the location of the GeV emission region for 21 flat spectrum radio quasars (FSRQs) with quasi-simultaneous spectral energy distributions (SEDs), in which the SEDs of 21 FSRQs are reproduced by the one-zone leptonic model including the synchrotron-self Compton (SSC) and external Compton (EC) processes. We suggest that the X-ray emission could be produced by the SSC process and the GeV emission could come from the EC process. The EC emission could originate from the inverse Compton (IC) scattering of photons from the broad line region (BLR) and accretion disk or dust torus by the same electron population, which mainly depend on the location of the $γ$-ray emission region. We propose a method to constrain the location of the GeV emission region based on the spectral shapes. When the GeV emission is located within the BLR, the IC scattering could occur at the Klein-Nishina regime and produce a broken/steep spectrum in the GeV energy band. When the GeV emission is produced outside the BLR, the IC scattering could take place at the Thomson regime and the GeV spectrum would have the same spectral index as the optical-infrared spectrum. We infer that the location of the GeV emission region is inside the BLR for 5 FSRQs and beyond the BLR for 16 FSRQs. Our results show that the ratio of the magnetic field and electron energy density is close to equipartition condition for 21 FSRQs.

astro-ph.HE↗