arXiv subjects

Geneviève Fleury

Publications and source records attributed to Geneviève Fleury.

17 recordsLinked to original sources

arXiv2023

Tunneling anisotropic spin galvanic effect

We show that pure spin injection from a magnetic electrode into an inversion symmetry-broken system composed of a tunnel barrier and a metallic region generates a transverse charge current. Such a tunnelling spin galvanic conversion is robust to disorder and non-local, i.e. injection and detection contacts do not coincide, and is strongly anisotropic whenever the internal spin-orbit field has a non-trivial angular dependence. The anisotropy shows up in linear response, contrary to what happens in bulk conversion setups lacking tunnelling elements. This is particularly relevant for spin-charge conversion at oxide interfaces, where both the tunnel barrier and the receiving low-dimensional metallic system host effective spin-orbit fields with complex angular symmetries.

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arXiv2023

Thermoelectric study of the time-dependent Resonant Level Model

We study the non-interacting time-dependent resonant level model mimicking a driven quantum dot connected through leads to two electronic reservoirs held at different temperatures and electrochemical potentials. Using a scattering approach, we provide analytical formulas of the time-dependent particle currents, heat currents, and input driving power under the wide-band limit approximation. We also derive Landauer formulas for the corresponding time-integrated quantities when the perturbation applied on the dot is of finite duration. Then, we focus on the case of a single square pulse, benchmark our analytical results against numerical ones that are valid beyond the wide-band limit, and perform numerical simulations for a smooth square pulse and a periodic square pulse train. Finally, we discuss whether the efficiency of the device in a stationary Seebeck configuration can be enhanced by driving the dot potential. We find numerically that the transient increase of the efficiency observed in some cases is eventually cancelled out at long times.

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arXiv2022

Extrinsic thermoelectric response of coherent conductors

We investigate the thermoelectric response of a coherent conductor in contact with a scanning probe. Coupling to the probe has the dual effect of allowing for the controlled local injection of heat currents into the system and of inducing interference patterns in the transport coefficients. This is sufficient to generate a multiterminal thermoelectric effect even if the conductor does not effectively break electron-hole symmetry and the tip injects no charge. Considering a simple model for noninteracting electrons, we find a nonlocal thermoelectric response which is modulated by the position of the hot probe tip, and a nonreciprocal longitudinal response which leads to a thermoelectric diode effect. A separate investigation of the effects of dephasing and of quasielastic scattering gives further insights into the different mechanisms involved.

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arXiv2021

Scanning probe-induced thermoelectrics in a quantum point contact

We study three-terminal thermoelectric transport in a two-dimensional Quantum Point Contact (QPC) connected to left and right electronic reservoirs, as well as a third one represented by a scanning probe tip. The latter acts as a voltage probe exchanging heat with the system but no charges on average. The thermoelectric coefficients are calculated numerically within the Landauer-Büttiker formalism in the low-temperature and linear response regimes. We find tip-induced oscillations of the local and non-local thermopowers and study their dependence on the QPC opening. If the latter is tuned on a conductance plateau, the system behaves as a perfect thermoelectric diode: for some tip positions the charge current through the QPC, driven by a local Seebeck effect, can flow in one direction only.

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arXiv2020

Simulating time-dependent thermoelectric transport in quantum systems

We put forward a gauge-invariant theoretical framework for studying time-resolved thermoelectric transport in an arbitrary multiterminal electronic quantum system described by a non-interacting tight-binding model. The system is driven out of equilibrium by an external time-dependent electromagnetic field (switched on at time $t_0$) and possibly by static temperature or electrochemical potential biases applied (from the remote past) between the electronic reservoirs. Numerical simulations are conducted by extending to energy transport the wave-function approach developed by Gaury et al. and implemented in the t-Kwant library. We provide a module that allows us to compute the time-resolved heat currents and powers in addition to the (already implemented) charge currents, and thus to simulate dynamical thermoelectric transport through realistic devices, when electron-electron and electron-phonon interactions can be neglected. We apply our method to the non-interacting Resonant Level Model and verify that we recover the results reported in the literature for the time-resolved heat currents in the expected limits. Finally, we showcase the versatility of the library by simulating dynamical thermal transport in a Quantum Point Contact subjected to voltage pulses.

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arXiv2018

Graphene $n$-$p$ junctions in the Quantum Hall regime: numerical study of incoherent scattering effects

We investigate electronic transport through a graphene $n$-$p$ junction in the quantum Hall effect regime at high perpendicular magnetic field, when the filling factors in the $n$-doped and $p$-doped regions are fixed to 2 and -2 respectively. We compute numerically the conductance $G$, the noise $Q$ and the Fano factor $F$ of the junction when inelastic effects are included along the interface in a phenomenological way, by means of fictitious voltage probes. Using a scaling approach, we extract the system coherence length $L_ϕ$ and describe the full crossover between the coherent limit ($W\ll L_ϕ$) and the incoherent limit ($W\gg L_ϕ$), $W$ being the interface length. While $G$ saturates at the value $e^2/h$ in the incoherent regime, $Q$ and $F$ are found to vanish exponentially for large length $W$. Corrections due to disorder are also investigated. Our results are finally compared to available experimental data.

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arXiv2017

Thermoelectric Effects in Nanowire-Based MOSFETs

We review a series of works describing thermoelectric effects in gated disordered nanowires (field effect transistor device configuration). After considering the elastic coherent regime characterizing sub-Kelvin temperatures, we study the inelastic activated regime occurring at higher temperatures, where electronic transport is dominated by phonon-assisted hops between localised states (Mott variable range hopping). The thermoelectric effects are studied as a function of the location of the Fermi level inside the nanowire conduction band, notably around its edges where they become very large. We underline the interest of using electron-phonon coupling around the band edges of large arrays of parallel nanowires for energy harvesting and hot spot cooling at small scales. Multiterminal thermoelectric transport and ratchet effects are eventually considered in the activated regime.

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arXiv2016

Nanowire-based thermoelectric ratchet in the hopping regime

We study a thermoelectric ratchet consisting of an array of disordered nanowires arranged in parallel on top of an insulating substrate, and contacted asymmetrically to two electrodes. Transport is investigated in the Mott hopping regime, when localized electrons can propagate through the nanowires via thermally assisted hops. When the electronic temperature in the nanowires is different from the phononic one in the substrate, we show that a finite electrical current is generated even in the absence of driving forces between the electrodes. We discuss the device performance both as an energy harvester, when an excess heat from the substrate is converted into useful power, and as a refrigerator, when an external power is supplied to cool down the substrate.

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arXiv2015

Absorbing/Emitting Phonons with one dimensional MOSFETs

We consider nanowires in the field effect transistor device configuration. Modeling each nanowire as a one dimensional lattice with random site potentials, we study the heat exchanges between the nanowire electrons and the substrate phonons, when electron transport is due to phonon-assisted hops between localized states. Shifting the nanowire conduction band with a metallic gate induces different behaviors. When the Fermi potential is located near the band center, a bias voltage gives rise to small local heat exchanges which fluctuate randomly along the nanowire. When it is located near one of the band edges, the bias voltage yields heat currents which flow mainly from the substrate towards the nanowire near one boundary of the nanowire, and in the opposite direction near the other boundary. This opens interesting perspectives for heat management at submicron scales: Arrays of parallel gated nanowires could be used for a field control of phonon emission/absorption.

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arXiv2015

Using Activated Transport in Parallel Nanowires for Energy Harvesting and Hot Spot Cooling

We study arrays of parallel doped semiconductor nanowires in a temperature range where the electrons propagate through the nanowires by phonon assisted hops between localized states. By solving the Random Resistor Network problem, we compute the thermopower $S$, the electrical conductance $G$, and the electronic thermal conductance $K^e$ of the device. We investigate how those quantities depend on the position -- which can be tuned with a back gate -- of the nanowire impurity band with respect to the equilibrium electrochemical potential. We show that large power factors can be reached near the band edges, when $S$ self-averages to large values while $G$ is small but scales with the number of wires. Calculating the amount of heat exchanged locally between the electrons inside the nanowires and the phonons of the environment, we show that phonons are mainly absorbed near one electrode and emitted near the other when a charge current is driven through the nanowires near their band edges. This phenomenon could be exploited for a field control of the heat exchange between the phonons and the electrons at submicron scales in electronic circuits. It could be also used for cooling hot spots.

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arXiv2015

Scanning Gate Microscopy of Quantum Contacts Under Parallel Magnetic Field: Beating Patterns Between Spin-Split Transmission Peaks or Channel Openings

We study the conductance $g$ of an electron interferometer created in a two dimensional electron gas between a nanostructured contact and the depletion region induced by the charged tip of a scanning gate microscope. Using non-interacting models, we study the beating pattern of interference fringes exhibited by the images giving $g$ as a function of the tip position when a parallel magnetic field is applied. The analytical solution of a simplified model allows us to distinguish between two cases: (i) If the field is applied everywhere, the beating of Fabry-Pérot oscillations of opposite spins gives rise to interference rings which can be observed at low temperatures when the contact is open between spin-split transmission resonances. (ii) If the field acts only upon the contact, the interference rings cannot be observed at low temperatures, but only at temperatures of the order of the Zeeman energy. For a contact made of two sites in series, a model often used for describing an inversion-symmetric double-dot setup, a pseudo-spin degeneracy is broken by the inter-dot coupling and a similar beating effect can be observed without magnetic field at temperatures of the order of the interdot coupling. Eventually, numerical studies of a quantum point contact with quantized conductance plateaus confirm that a parallel magnetic field applied everywhere or only upon the contact gives rises to similar beating effects between spin-split channel openings.

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arXiv2014

Gate-modulated thermopower of disordered nanowires: II. Variable-range hopping regime

We study the thermopower of a disordered nanowire in the field effect transistor configuration. After a first paper devoted to the elastic coherent regime (Bosisio R., Fleury G. and Pichard J.-L. 2014 \textit{New J. Phys.} \textbf{16} 035004), we consider here the inelastic activated regime taking place at higher temperatures. In the case where charge transport is thermally assisted by phonons (Mott Variable Range Hopping regime), we use the Miller-Abrahams random resistor network model as recently adapted by Jiang et al. for thermoelectric transport. This approach previously used to study the bulk of the nanowire impurity band is extended for studying its edges. In this limit, we show that the typical thermopower is largely enhanced, attaining values larger that $10\, k_B/e \sim 1\, \mathrm{mV\,K}^{-1}$ and exhibiting a non-trivial behaviour as a function of the temperature. A percolation theory by Zvyagin extended to disordered nanowires allows us to account for the main observed edge behaviours of the thermopower.

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arXiv2014

Gate-modulated thermopower in disordered nanowires: I. Low temperature coherent regime

Using a one-dimensional tight-binding Anderson model, we study a disordered nanowire in the presence of an external gate which can be used for depleting its carrier density (field effect transistor device configuration). In this first paper, we consider the low temperature coherent regime where the electron transmission through the nanowire remains elastic. In the limit where the nanowire length exceeds the electron localization length, we derive three analytical expressions for the typical value of the thermopower as a function of the gate potential, in the cases where the electron transport takes place (i) inside the impurity band of the nanowire, (ii) around its band edges and eventually (iii) outside its band. We obtain a very large enhancement of the typical thermopower at the band edges, while the sample to sample fluctuations around the typical value exhibit a sharp crossover from a Lorentzian distribution inside the impurity band towards a Gaussian distribution as the band edges are approached.

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arXiv2013

Scanning Gate Microscopy of Kondo Dots: Fabry-Pérot Interferences and Thermally Induced Rings

We study the conductance of an electron interferometer formed in a two dimensional electron gas between a nanostructured quantum contact and the charged tip of a scanning gate microscope. Measuring the conductance as a function of the tip position, thermally induced rings may be observed in addition to Fabry-Pérot interference fringes spaced by half the Fermi wavelength. If the contact is made of a quantum dot opened in the middle of a Kondo valley, we show how the location of the rings allows to measure by electron interferometry the magnetic moment of the dot above the Kondo temperature.

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arXiv2013

Delay-Time and Thermopower Distributions at the Spectrum Edges of a Chaotic Scatterer

We study chaotic scattering outside the wide band limit, as the Fermi energy $E_F$ approaches the band edges $E_B$ of a one-dimensional lattice embedding a scattering region of M sites. We show that the delay-time and thermopower distributions differ near the edges from the universal expressions valid in the bulk. To obtain the asymptotic universal forms of these edge distributions, one must keep constant the energy distance $E_F-E_B$ measured in units of the same energy scale proportional to $\propto M^{-1/3}$ which is used for rescaling the energy level spacings at the spectrum edges of large Gaussian matrices. In particular the delay-time and the thermopower have the same universal edge distributions for arbitrary M as those for an M=2 scatterer, which we obtain analytically.

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arXiv2012

Scattering theory of chiral Majorana fermion interferometry

Using scattering theory, we investigate interferometers composed of chiral Majorana fermion modes coupled to normal metal leads. We advance an approach in which also the basis states in the normal leads are written in terms of Majorana modes. Thus each pair of electron-hole states is associated with a pair of Majorana modes. Only one lead Majorana mode couples to the intrinsic Majorana mode whereas its partner is completely reflected. Similarly the remaining Majorana modes are completely reflected but in general mix pair-wise. We demonstrate that the charge current can also be expressed in terms of interference between pairs of Majorana modes. These two basic facts permit a treatment and understanding of current and noise signatures of chiral Majorana fermion interferometry in an especially elegant way. As a particular example of applications, in Fabry-Perot-type interferometers where chiral Majorana modes form loops, resonances (anti-resonances) from such loops always lead to peaked (suppressed) Andreev differential conductances, and negative (positive) cross-correlations that originate purely from two-Majorana-fermion exchange. These investigations are intimately related to current and noise signatures of Majorana bound states.

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arXiv2010

The energy scale behind the metallic behaviors in low-density Si-MOSFETs

We show that the unexpected metallic behavior (the so-called two-dimensional metal-insulator transition) observed in low-density Silicon metal-oxide-semiconductor field-effect transistors (Si-MOSFETs) is controlled by a unique characteristic energy scale, the polarization energy. On one hand, we perform Quantum Monte Carlo calculations of the energy needed to polarize the two dimensional electron gas at zero temperature, taking into account Coulomb interactions, valley degeneracy and electronic mobility (disorder). On the other hand, we identify the characteristic energy scale controlling the physics in eight different sets of experiments. We find that our {\it ab-initio} polarization energies (obtained without any adjustable parameters) are in perfect agreement with the observed characteristic energies for all available data, both for the magnetic field and temperature dependence of the resistivities. Our results put strong constraints on possible mechanisms responsible for the metallic behavior. In particular, there are strong indications that the system would eventually become insulating at low enough temperature.

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