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Gertjan Koster

Publications and source records attributed to Gertjan Koster.

35 records · Page 2Linked to original sources

Determining the energetics of vicinal perovskite oxide surfaces

The energetics of vicinal SrTiO$_3$(001) and DyScO$_3$(110), prototypical perovskite vicinal surfaces, has been studied using topographic atomic force microscopy imaging. The kink formation and strain relaxation energies are extracted from a statistical analysis of the step meandering. Both perovskite surfaces have very similar kink formation energies and exhibit a similar triangular step undulation. Our experiments suggest that the energetics of perovskite oxide surfaces is mainly governed by the local oxygen coordination.

cond-mat.mtrl-sci↗

Interface Engineering in La0.67Sr0.33MnO3-SrTiO3 Heterostructures

Interface engineering is an extremely useful tool for systematically investigating materials and the various ways materials interact with each other. We describe different interface engineering strategies designed to reveal the origin of the electric and magnetic dead-layer at La0.67Sr0.33MnO3 interfaces. La0.67Sr0.33MnO3 is a key example of a strongly correlated peroskite oxide material in which a subtle balance of competing interactions gives rise to a ferromagnetic metallic groundstate. This balance, however, is easily disrupted at interfaces. We systematically vary the dopant profile, the disorder and the oxygen octahedra rotations at the interface to investigate which mechanism is responsible for the dead layer. We find that the magnetic dead layer can be completely eliminated by compositional interface engineering such that the polar discontinuity at the interface is removed. This, however, leaves the electrical dead-layer largely intact. We find that deformations in the oxygen octahedra network at the interface are the dominant cause for the electrical dead layer.

cond-mat.mtrl-sci↗

Epitaxial growth of complex oxides on silicon by enhanced surface diffusion in large area pulsed laser deposition

Homogeneous highly epitaxial LaSrMnO3 (LSMO) thin films have been grown on Yttria-stabilized-Zirconia (YsZ) / CeO2 buffer layers on technological relevant 4" silicon wafers using a Twente Solid State Technology B.V. (TSST) developed large area Pulsed Laser Deposition (PLD) setup. We study and show the results of the effect of an additional SrRuO3 buffer layer on the growth temperature dependent structural and magnetic properties of LSMO films. With the introduction of a thin SrRuO3 layer on top of the buffer stack, LSMO films show ferromagnetic behaviour for growth temperatures as low as 250C. We suggest that occurrence of epitaxial crystal growth of LSMO at these low growth temperatures can be understood by an improved surface diffusion, which ensures sufficient intermixing of surface species for formation of the correct phase. This intermixing is necessary because the full plume is collected on the 4" wafer resulting in a compositional varying flux of species on the wafer, in contrast to small scale experiments.

cond-mat.mtrl-sci↗

Tunable and temporally stable ferroelectric imprint through polarization coupling

Here we demonstrate a method to tune ferroelectric imprint, which is stable in time, based on the coupling between the non-switchable polarization of ZnO and switchable polarization of PbZrxTi(1-x)O3. SrRuO3/PbZrxTi(1-x)O3 /ZnO/SrRuO3 heterostructures were grown with different ZnO thicknesses. It is shown that the coercive voltages and ferroelectric imprint varies linearly with the thickness of ZnO. It is also demonstrated that the ferroelectric imprint remains stable with electric field cycling and electric field stress assisted aging.

cond-mat.mtrl-sci↗

Gate-tunable transport properties of in-situ capped Bi$_2$Te$_3$ topological insulator thin films

Combining the ability to prepare high-quality, intrinsic Bi$_2$Te$_3$ topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pronounced, gate-tunable change in transport properties of Bi$_2$Te$_3$ thin films. Using a back-gate, the carrier density is tuned by a factor of $\sim 7$ in Al$_2$O$_3$ capped Bi$_2$Te$_3$ sample and by a factor of $\sim 2$ in Te capped Bi$_2$Te$_3$ films. We achieve full depletion of bulk carriers, which allows us to access the topological transport regime dominated by surface state conduction. When the Fermi level is placed in the bulk band gap, we observe the presence of two coherent conduction channels associated with the two decoupled surfaces. Our magnetotransport results show that the combination of capping layers and electrostatic tuning of the Fermi level provide a technological platform to investigate the topological properties of surface states in transport experiments and pave the way towards the implementation of a variety of topological quantum devices.

cond-mat.mes-hall↗

Metallic and insulating interfaces of amorphous SrTiO3-based oxide heterostructures

The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. Herein we show that metallic interfaces can be realized in SrTiO3-based heterostructures with various insulating overlayers of amorphous LaAlO3, SrTiO3 and yttria-stabilized zirconia films. On the other hand, samples of amorphous La7/8Sr1/8MnO3 films on SrTiO3 substrates remain insulating. The interfacial conductivity results from the formation of oxygen vacancies near the interface, suggesting that the redox reactions on the surface of SrTiO3 substrates play an important role.

cond-mat.mtrl-sci↗

High temperature magnetic insulating phase in ultrathin La0.67Sr0.33MnO3 films

We present a study of the thickness dependence of magnetism and electrical conductivity in ultra thin La0.67Sr0.33MnO3 films grown on SrTiO3 (110) substrates. We found a critical thickness of 10 unit cells below which the conductivity of the films disappeared and simultaneously the Curie temperature (TC) increased, indicating a magnetic insulating phase at room temperature. These samples have a TC of about 560 K with a significant saturation magnetization of 1.2 +- 0.2 muB/Mn. The canted antiferromagnetic insulating phase in ultra thin films of n< 10 coincides with the occurrence of a higher symmetry structural phase with a different oxygen octahedra rotation pattern. Such a strain engineered phase is an interesting candidate for an insulating tunneling barrier in room temperature spin polarized tunneling devices.

cond-mat.mtrl-sci↗

Preventing the reconstruction of the polar discontinuity at oxide heterointerfaces

Perovskite oxide heteroepitaxy receives much attention because of the possibility to com- bine the diverse functionalities of perovskite oxide building blocks. A general boundary con- dition for the epitaxy is the presence of polar discontinuities at heterointerfaces. These polar discontinuities result in reconstructions, often creating new functionalities at the interface. However, for a significant number of materials these reconstructions are unwanted as they alter the intrinsic materials properties at the interface. Therefore, a strategy to eliminate this reconstruction of the polar discontinuity at the interfaces is required. We show that the use of compositional interface engineering can prevent the reconstruction at the La0.67Sr0.33MnO3/SrTiO3 (LSMO/STO) interface. The polar discontinuity at this interface can be removed by the insertion of a single La0.33Sr0.67O layer, resulting in improved interface magnetization and electrical conductivity.

cond-mat.mtrl-sci↗

Uniaxial contribution to the magnetic anisotropy of La0.67Sr0.33MnO3 thin films induced by orthorhombic crystal structure

La0.67Sr0.33MnO3 (LSMO) thin films under compressive strain have an orthorhombic symmetry with (1-10)o and (001)o in-plane orientations. (The subscript o denotes the orthorhombic symmetry.) Here, we grew LSMO on cubic (LaAlO3)0.3-(Sr2AlTaO6)0.7 (LSAT) substrates and observed a uniaxial contribution to the magnetic anisotropy which is related to the orthorhombic crystal structure. Since the lattice mismatch is equal in the two directions, the general understanding of anisotropy in LSMO, which relates the uniaxial anisotropy to differences in strain, cannot explain the results. These findings suggest that the oxygen octahedra rotations associated with the orthorhombic structure, possibly resulting in different Mn-O-Mn bond angles and therefore a change in magnetic coupling between the [1-10]o and [001]o directions, determine the anisotropy. We expect these findings to lead to a better understanding of the microscopic origin of the magnetocrystalline anisotropy in LSMO.

cond-mat.mtrl-sci↗

Tetragonal CuO: A new end member of the 3d transition metal monoxides

Monoclinic CuO is anomalous both structurally as well as electronically in the 3$d$ transition metal oxide series. All the others have the cubic rock salt structure. Here we report the synthesis and electronic property determination of a tetragonal (elongated rock salt) form of CuO created using an epitaxial thin film deposition approach. In situ photoelectron spectroscopy suggests an enhanced charge transfer gap $Δ$ with the overall bonding more ionic. As an end member of the 3d transition monoxides, its magnetic properties should be that of a high $T_N$ antiferromagnet.

cond-mat.mtrl-sci↗

Room temperature Epitaxial Stabilization of a Tetragonal Phase in ARuO3 (A=Ca,Sr) Thin Films

We demonstrate that SrRuO3 and CaRuO3 thin films undergo a room temperature structural phase transition driven by the substrate imposed epitaxial biaxial strain. As tensile strain increases, ARuO3 (A=Ca, Sr) films transform from the orthorhombic phase which is usually observed in bulk SrRuO3 and CaRuO3 at room temperature, into a tetragonal phase which in bulk samples is only stable at higher temperatures. More importantly, we show that the observed phenomenon strongly affects the electronic and magnetic properties of ARuO3 thin films that are grown on different single crystal substrates which in turn offers the possibility to tune these properties.

cond-mat.mtrl-sci↗

Electronic properties of buried hetero-interfaces of LaAlO3 on SrTiO3

We have made very thin films of LaAlO3 on TiO2 terminated SrTiO3 and have measured the properties of the resulting interface in various ways. Transport measurements show a maximum sheet carrier density of 1016 cm-2 and a mobility around 104 cm2 V-1 s-1. In situ ultraviolet photoelectron spectroscopy (UPS) indicates that for these samples a finite density of states exists at the Fermi level. From the oxygen pressure dependence measured in both transport as well as the UPS, we detail, as reported previously by us, that oxygen vacancies play an important role in the creation of the charge carriers and that these vacancies are introduced by the pulsed laser deposition process used to make the heterointerfaces. Under the conditions studied the effect of LaAlO3 on the carrier density is found to be minimal.

cond-mat.mtrl-sci↗

Strain-induced single-domain growth of epitaxial SrRuO3 layers on SrTiO3: a high-temperature x-ray diffraction study

Temperature dependent structural phase transitions of SrRuO3 thin films epitaxially grown on SrTiO3(001) single crystal substrates have been studied using high-resolution x-ray diffraction. In contrast to bulk SrRuO3, coherently strained epitaxial layers do not display cubic symmetry up to ~730 oC and remain tetragonal. Such behavior is believed to be induced by compressive strain between the SrRuO3 layer and SrTiO3 substrate due to lattice mismatch. The tetragonal symmetry during growth explains the single domain growth on miscut SrTiO3 substrates with step edges running along the [100] or [010] direction.

cond-mat.mtrl-sci↗

Origin of charge density at LaAlO3-on-SrTiO3 hetero-interfaces; possibility of intrinsic doping

As discovered by Ohtomo et al., a large sheet charge density with high mobility exists at the interface between SrTiO3 and LaAlO3. Based on transport, spectroscopic and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant.

cond-mat.mtrl-sci↗

Dependence of electronic structure of SrRuO3 and the degree of correlation on cation off-stoichiometry

We have grown and studied high quality SrRuO3 films grown by MBE as well as PLD. By changing the oxygen activity during deposition we were able to make SrRuO3 samples that were stoichiometric (low oxygen activity) or with ruthenium vacancies (high oxygen activity). Samples with strontium vacancies were found impossible to produce since the ruthenium would precipitate out as RuO2. The volume of the unit cell of SrRuO3 becomes larger as more ruthenium vacancies are introduced. The residual resistivity ratio (RRR) and room temperature resistivity were found to systematically depend on the volume of the unit cell and therefore on the amount of ruthenium vacancies. The RRR varied from ~30 for stoichiometric samples to less than two for samples that were very ruthenium poor. The room temperature resistivity varied from 190 microOhm cm for stoichoimetric samples to over 300 microOhm cm for very ruthenium poor samples. UPS spectra show a shift of weight from the coherent peak to the incoherent peak around the Fermi level when samples have more ruthenium vacancies. Core level XPS spectra of the ruthenium 3d lines show a strong screened part in the case of stoichiometric samples. This screened part disappears when ruthenium vacancies are introduced. Both the UPS and the XPS results are consistent with the view that correlation increases as the amount of ruthenium vacancies increase.

cond-mat.mtrl-sci↗

Use of real-time Fourier Transform Infrared Reflectivity as an in situ monitor of YBCO film growth and processing

Fourier Transform Infrared (FTIR) spectroscopy has been utilized during high rate E-beam evaporation/deposition of YBa2Cu3O7 (YBCO). The results demonstrate the great utility of FTIR as an in situ monitor of YBCO deposition and processing. We detect different (amorphous/fine polycrystalline) insulating pre-existing phases to the high Tc superconducting phase which appear to have distinct reflectivity fingerprints dominated by thin film interference effects, as a function of temperature and oxygen pressure. These fingerprints reveal some of the kinetic and thermodynamic pathways during the growth of YBCO.

cond-mat.mtrl-sci↗

What Tc can teach about superconductivity

We compare the Tcs found in different families of optimally-doped High-Tc cuprates and find, contrary generally accepted lore, that pairing is not exclusively in the CuO2 layers. Evidence for additional pairing interactions, that take place outside the CuO2 layers, is found in two different classes of cuprates, namely the charge reservoir and the chain layer cuprates. The additional pairing in these layers suppresses fluctuations and hence enhances Tc. Tcs higher than 100K, are found in the cuprates containing charge reservoir layers with cations of Tl, Bi, or Hg that are known to be negative-U ions. Comparisons with other cuprates that have the same sequence of optimally doped CuO2 layers, but have lower Tcs, show that Tc is increased by factors of two or more upon insertion of the charge reservoir layer(s). The Tl ion has been shown to be an electronic pairing center in the model system (Pb,Tl)Te and data in the literature that suggest it behaves similarly in the cuprates. A number of other puzzling results that are found in the Hg, Tl, and Bi cuprates can be understood in terms of negative-U ion pairing centers in the charge reservoir layers. There is also evidence for additional pairing in the chain layer cuprates. Superconductivity that originates in the double "zigzag" Cu chains layers that has been recently demonstrated in NMR studies of Pr-247 leads to the suggestion of a linear, charge 1, diamagnetic quasiparticle formed from a charge-transfer exciton and a hole. Other properties of the chain layer cuprates that are difficult to explain using models in which the pairing is solely confined to the CuO2 layers can be understood if supplementary pairing in the chain layers is included. Finally, we speculate that these same linear quasi-particles can exist in the 2-dimensional CuO2 layers as well.

cond-mat.supr-con↗