arXiv subjects

Giancarlo Soavi

Publications and source records attributed to Giancarlo Soavi.

34 records · Page 2Linked to original sources

arXiv2023

Ultrafast Opto-Electronic and Thermal Tuning of Third-Harmonic Generation in a Graphene Field Effect Transistor

Graphene is a unique platform for tunable opto-electronic applications thanks to its linear band dispersion, which allows electrical control of resonant light-matter interactions. Tuning the nonlinear optical response of graphene is possible both electrically and in an all-optical fashion, but each approach involves a trade-off between speed and modulation depth. Here, we combine lattice temperature, electron doping, and all-optical tuning of third-harmonic generation in a hBN-encapsulated graphene opto-electronic device and demonstrate up to 85% modulation depth along with gate-tunable ultrafast dynamics. These results arise from the dynamic changes in the transient electronic temperature combined with Pauli blocking induced by the out-of-equilibrium chemical potential. Our work provides a detailed description of the transient nonlinear optical and electronic response of graphene, which is crucial for the design of nanoscale and ultrafast optical modulators, detectors and frequency converters.

cond-mat.mes-hall↗

arXiv2023

Valley Polarization-Electric Dipole Interference and Nonlinear Chiral Selection Rules in Monolayer WSe$_2$

In monolayer transition metal dichalcogenides time-reversal symmetry, combined with space-inversion symmetry, defines the spin-valley degree of freedom. As such, engineering and control of time-reversal symmetry by optical or magnetic fields constitutes the foundation of valleytronics. Here, we propose a new approach for the detection of broken time-reversal symmetry and valley polarization in monolayer WSe$_2$ based on second harmonic generation. Our method can selectively and simultaneously generate and detect a valley polarization at the $\pm K$ valleys of transition metal dichalcogenides at room temperature. Furthermore, it allows to measure the interference between the real and imaginary parts of the intrinsic (electric dipole) and valley terms of the second order nonlinear susceptibility. This work demonstrates the potential and unique capabilities of nonlinear optics as a probe of broken time-reversal symmetry and as a tool for ultrafast and non-destructive valleytronic operations.

physics.optics↗

arXiv2023

Nonlinear Dispersion Relation and Out-of-Plane Second Harmonic Generation in MoSSe and WSSe Janus Monolayers

Janus transition metal dichalcogenides are an emerging class of atomically thin materials with engineered broken mirror symmetry that gives rise to long-lived dipolar excitons, Rashba splitting, and topologically protected solitons. They hold great promise as a versatile nonlinear optical platform due to their broadband harmonic generation tunability, ease of integration on photonic structures, and nonlinearities beyond the basal crystal plane. Here, we study second and third harmonic generation in MoSSe and WSSe Janus monolayers. We use polarization-resolved spectroscopy to map the full second-order susceptibility tensor of MoSSe, including its out-of-plane components. In addition, we measure the effective third-order susceptibility, and the second-order nonlinear dispersion close to exciton resonances for both MoSSe and WSSe at room and cryogenic temperatures. Our work sets a bedrock for understanding the nonlinear optical properties of Janus transition metal dichalcogenides and probing their use in the next-generation on-chip multifaceted photonic devices.

cond-mat.mes-hall↗

arXiv2023

A Monolithic Graphene-Functionalized Microlaser for Multispecies Gas Detection

Optical microcavity enhanced light-matter interaction offers a powerful tool to develop fast and precise sensing techniques, spurring applications in the detection of biochemical targets ranging from cells, nanoparticles, and large molecules. However, the intrinsic inertness of such pristine microresonators limits their spread in new fields such as gas detection. Here, a functionalized microlaser sensor is realized by depositing graphene in an erbium-doped over-modal microsphere. By using a 980 nm pump, multiple laser lines excited in different mode families of the microresonator are co-generated in a single device. The interference between these splitting mode lasers produce beat notes in the electrical domain (0.2-1.1 MHz) with sub-kHz accuracy, thanks to the graphene-induced intracavity backward scattering. This allows for multispecies gas identification from a mixture, and ultrasensitive gas detection down to individual molecule.

physics.optics↗

arXiv2022

Tuning nanowire lasers via hybridization with two-dimensional materials

Mixed dimensional hybrid structures have recently gained increasing attention as promising building blocks for novel electronic and optoelectronic devices. In this context, hybridization of semiconductor nanowires with two-dimensional materials could offer new ways to control and modulate lasing at the nanoscale. In this work, we deterministically fabricate hybrid mixed-dimensional heterostructures composed of ZnO nanowires and MoS2 monolayers with micrometer control over their relative position. First, we show that our deterministic fabrication method does not degrade the optical properties of the ZnO nanowires. Second, we demonstrate that the lasing wavelength of ZnO nanowires can be tuned by several nanometers by hybridization with CVD-grown MoS2 monolayers. We assign this spectral shift of the lasing modes to an efficient carrier transfer at the heterointerface and the subsequent increase of the optical band gap in ZnO (Moss-Burstein effect).

physics.optics↗

arXiv2022

Electrically tuneable nonequilibrium optical response of graphene

The ability to tune the optical response of a material via electrostatic gating is crucial for optoelectronic applications, such as electro-optic modulators, saturable absorbers, optical limiters, photodetectors and transparent electrodes. The band structure of single layer graphene (SLG), with zero-gap, linearly dispersive conduction and valence bands, enables an easy control of the Fermi energy E$_F$ and of the threshold for interband optical absorption. Here, we report the tunability of the SLG non-equilibrium optical response in the near-infrared (1000-1700nm/0.729-1.240eV), exploring a range of E$_F$ from -650 to 250 meV by ionic liquid gating. As E$_F$ increases from the Dirac point to the threshold for Pauli blocking of interband absorption, we observe a slow-down of the photobleaching relaxation dynamics, which we attribute to the quenching of optical phonon emission from photoexcited charge carriers. For E$_F$ exceeding the Pauli blocking threshold, photobleaching eventually turns into photoinduced absorption, due to hot electrons' excitation increasing SLG absorption. The ability to control both recovery time and sign of nonequilibrium optical response by electrostatic gating makes SLG ideal for tunable saturable absorbers with controlled dynamics.

cond-mat.mtrl-sci↗

arXiv2021

All-optical polarization and amplitude modulation of second-harmonic generation in atomically thin semiconductors

Second-harmonic generation is of paramount importance in several fields of science and technology, including frequency conversion, self-referencing of frequency combs, nonlinear spectroscopy and pulse characterization. Advanced functionalities are enabled by modulation of the harmonic generation efficiency, which can be achieved with electrical or all-optical triggers. Electrical control of the harmonic generation efficiency offers large modulation depth at the cost of low switching speed, by contrast to all-optical nonlinear devices, which provide high speed and low modulation depth. Here we demonstrate all-optical modulation of second-harmonic generation in MoS2 with a modulation depth of close to 100% and speed limited only by the fundamental pulse duration. This result arises from a combination of D3h crystal symmetry and the deep subwavelength thickness of the sample, it can therefore be extended to the whole family of transition metal dichalcogenides to provide great flexibility in the design of advanced nonlinear optical devices such as high-speed integrated frequency converters, broadband autocorrelators for ultrashort pulse characterization, and tunable nanoscale holograms.

physics.optics↗

arXiv2021

Tuning exciton recombination rates in doped transition metaldichalcogenides

Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors that hold great promise for advanced applications in photonics and optoelectronics. Understanding the interplay between their radiative and non-radiative recombination pathways is thus of crucial importance not only for fundamental studies but also for the design of future nanoscale on-chip devices. Here, we investigate the interplay between doping and exciton-exciton annihilation (EEA) and their impact on the photoluminescence quantum yield in different TMD samples and related heterostructures. We demonstrate that the EEA threshold increases in highly doped samples, where the radiative and non-radiative recombination of trions dominates.

cond-mat.mes-hall↗

arXiv2021

Hot carriers in graphene -- fundamentals and applications

Hot charge carriers in graphene exhibit fascinating physical phenomena, whose understanding has improved greatly over the past decade. They have distinctly different physical properties compared to, for example, hot carriers in conventional metals. This is predominantly the result of graphene's linear energy-momentum dispersion, its phonon properties, its all-interface character, and the tunability of its carrier density down to very small values, and from electron- to hole-doping. Since a few years, we have witnessed an increasing interest in technological applications enabled by hot carriers in graphene. Of particular interest are optical and optoelectronic applications, where hot carriers are used to detect (photodetection), convert (nonlinear photonics), or emit (luminescence) light. Graphene-enabled systems in these application areas could find widespread use and have a disruptive impact, for example in the field of data communication, high-frequency electronics, and industrial quality control. The aim of this review is to provide an overview of the most relevant physics and working principles that are relevant for applications exploiting hot carriers in graphene.

cond-mat.mes-hall↗

arXiv2021

Electrically Tunable Four-Wave-Mixing in Graphene Heterogeneous Fiber for Individual Gas Molecule Detection

Detection of individual molecules is the ultimate goal of any chemical sensor. In the case of gas detection, such resolution has been achieved in advanced nanoscale electronic solid-state sensors, but it has not been possible so far in integrated photonic devices, where the weak light-molecule interaction is typically hidden by noise. Here, we demonstrate a scheme to generate ultrasensitive down-conversion four-wave-mixing (FWM) in a graphene bipolar-junction-transistor heterogeneous D-shaped fiber. In the communication band, the FWM conversion efficiency can change steeply when the graphene Fermi level approaches 0.4 eV. In this condition, we exploit our unique two-step optoelectronic heterodyne detection scheme, and we achieve real-time individual gas molecule detection in vacuum. Such combination of graphene strong nonlinearities, electrical tunability, and all-fiber integration paves the way toward the design of versatile high-performance graphene photonic devices.

cond-mat.mes-hall↗

arXiv2020

Exciton-phonon coupling strength in single-layer MoSe2 at room temperature

Single-layer transition metal dichalcogenides are at the center of an ever increasing research effort both in terms of fundamental physics and applications. Exciton-phonon coupling plays a key role in determining the (opto)electronic properties of these materials. However, the exciton-phonon coupling strength has not been measured at room temperature. Here, we develop two-dimensional micro-spectroscopy to determine exciton-phonon coupling of single-layer MoSe2. We detect beating signals as a function of waiting time T, induced by the coupling between the A exciton and the A'1 optical phonon. Analysis of two-dimensional beating maps combined with simulations provides the exciton-phonon coupling. The Huang-Rhys factor of ~1 is larger than in most other inorganic semiconductor nanostructures. Our technique offers a unique tool to measure exciton-phonon coupling also in other heterogeneous semiconducting systems with a spatial resolution ~260 nm, and will provide design-relevant parameters for the development of optoelectronic devices.

cond-mat.mes-hall↗

arXiv2020

Tunable broadband light emission from graphene

Graphene is an ideal material for integrated nonlinear optics thanks to its strong light-matter interaction and large nonlinear optical susceptibility. Graphene has been used in optical modulators, saturable absorbers, nonlinear frequency converters, and broadband light emitters. For the latter application, a key requirement is the ability to control and engineer the emission wavelength and bandwidth, as well as the electronic temperature of graphene. Here, we demonstrate that the emission wavelength of graphene$'$ s broadband hot carrier photoluminescence can be tuned by integration on photonic cavities, while thermal management can be achieved by out-of-plane heat transfer to hexagonal boron nitride. Our results pave the way to graphene-based ultrafast broadband light emitters with tunable emission.

physics.optics↗

arXiv2020

Low-loss integrated nanophotonic circuits with layered semiconductor materials

Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have enabled new classes of light-emitting diodes, modulators and photodetectors, that could be amenable to wafer-scale manufacturing. For integrated photonic devices, the optical losses of the PICs are critical. In contrast to silicon, silicon nitride (Si3N4) has emerged as a low-loss integrated platform with a wide transparency window from ultraviolet to mid-infrared and absence of two-photon absorption at telecommunication bands. Moreover, it is suitable for nonlinear integrated photonics due to its high Kerr nonlinearity and high-power handing capability. These features of Si3N4 are intrinsically beneficial for nanophotonics and optoelectronics applications. Here we report a low-loss integrated platform incorporating monolayer molybdenum ditelluride (1L-MoTe2) with Si3N4 photonic microresonators. We show that, with the 1L-MoTe2, microresonator quality factors exceeding 3 million in the telecommunication O-band to E-band are maintained. We further investigate the change of microresonator dispersion and resonance shift due to the presence of 1L-MoTe2, and extrapolate the optical loss introduced by 1L-MoTe2 in the telecommunication bands, out of the excitonic transition region. Our work presents a key step for low-loss, hybrid PICs with layered semiconductors without using heterogeneous wafer bonding.

physics.optics↗

arXiv2019

Optoelectronic mixing with high frequency graphene transistors

Graphene is ideally suited for optoelectronic applications. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We report optoelectronic mixing up to to 67GHz using a back-gated graphene field effect transistor (GFET). We also present a model to describe the resulting mixed current. These results pave the way for GETs optoelectronic mixers for mm-wave applications, such as telecommunications and RADAR/LIDAR systems.

physics.app-ph↗

arXiv2019

Photocatalytic activity of exfoliated graphite-TiO$_2$ nanocomposites

We investigate the photocatalytic performance of nanocomposites prepared in a one-step process by liquid-phase exfoliation of graphite in the presence of TiO$_2$ nanoparticles (NPs) at atmospheric pressure and in water, without heating or adding any surfactant, and starting from low-cost commercial reagents. The nanocomposites show enhanced photocatalytic activity, degrading up to 40$\%$ more pollutants with respect to the starting TiO$_2$-NPs. In order to understand the photo-physical mechanisms underlying this enhancement, we investigate the photo-generation of reactive species (trapped holes and electrons) by ultrafast transient absorption spectroscopy. We observe an electron transfer process from TiO$_2$ to the graphite flakes within the first picoseconds of the relaxation dynamics, which causes the decrease of the charge recombination rate, and increases the efficiency of the reactive species photo-production.

cond-mat.mes-hall↗

arXiv2014

High energetic excitons in carbon nanotubes directly probe charge-carriers

Theory predicts peculiar features for excited-state dynamics in one dimension (1D) that are difficult to be observed experimentally. Single-walled carbon nanotubes (SWNTs) are an excellent approximation to 1D quantum confinement, due to their very high aspect ratio and low density of defects. Here we use ultrafast optical spectroscopy to probe photogenerated charge-carriers in (6,5) semiconducting SWNTs. We identify the transient energy shift of the highly polarizable S33 transition as a sensitive fingerprint of charge-carriers in SWNTs. By measuring the coherent phonon amplitude profile we obtain a precise estimate of the Stark-shift and discuss the binding energy of the S33 excitonic transition. From this, we infer that charge-carriers are formed instantaneously with sizable quantum yield even upon pumping the first exciton, S11. The decay of the photogenerated charge-carrier population is well described by a model for geminate recombination in 1D, suggesting an initial charge carrier separation of the same order of the exciton correlation length.

cond-mat.mes-hall↗