arXiv subjects

Giorgio Sangiovanni

Publications and source records attributed to Giorgio Sangiovanni.

At least 73 records · Page 4Linked to original sources

arXiv2023

Flat band separation and robust spin-Berry curvature in bilayer kagome metals

Kagome materials have emerged as a setting for emergent electronic phenomena that encompass different aspects of symmetry and topology. It is debated whether the XV$_6$Sn$_6$ kagome family (where X is a rare earth element), a recently discovered family of bilayer kagome metals, hosts a topologically non-trivial ground state resulting from the opening of spin-orbit coupling gaps. These states would carry a finite spin-Berry curvature, and topological surface states. Here, we investigate the spin and electronic structure of the XV$_6$Sn$_6$ kagome family. We obtain evidence for a finite spin-Berry curvature contribution at the center of the Brillouin zone, where the nearly flat band detaches from the dispersing Dirac band because of spin-orbit coupling. In addition, the spin-Berry curvature is further investigated in the charge density wave regime of ScV$_6$Sn$_6$, and it is found to be robust against the onset of the temperature-driven ordered phase. Utilizing the sensitivity of angle resolved photoemission spectroscopy to the spin and orbital angular momentum, our work unveils the spin-Berry curvature of topological kagome metals, and helps to define its spectroscopic fingerprint.

cond-mat.str-el↗

arXiv2023

Stabilizing an atomically thin quantum spin Hall insulator at ambient conditions: Graphene-intercalation of indenene

Atomic monolayers on semiconductor surfaces represent a new class of functional quantum materials at the ultimate two-dimensional limit, ranging from superconductors [1, 2] to Mott insulators [3, 4] and ferroelectrics [5] to quantum spin Hall insulators (QSHI) [6, 7]. A case in point is the recently discovered QSHI indenene [7, 8], a triangular monolayer of indium epitaxially grown on SiC(0001), exhibiting a $\sim$120meV gap and substrate-matched monodomain growth on the technologically relevant $μ$m scale [9]. Its suitability for room-temperature spintronics is countered, however, by the instability of pristine indenene in air, which destroys the system along with its topological character, nullifying hopes of ex-situ processing and device fabrication. Here we show how indenene intercalation into epitaxial graphene offers effective protection from the oxidizing environment, while it leaves the topological character fully intact. This opens an unprecedented realm of ex-situ experimental opportunities, bringing this monolayer QSHI within realistic reach of actual device fabrication and edge channel transport.

cond-mat.mtrl-sci↗

arXiv2023

Deep Learning the Functional Renormalization Group

We perform a data-driven dimensionality reduction of the scale-dependent 4-point vertex function characterizing the functional Renormalization Group (fRG) flow for the widely studied two-dimensional $t - t'$ Hubbard model on the square lattice. We demonstrate that a deep learning architecture based on a Neural Ordinary Differential Equation solver in a low-dimensional latent space efficiently learns the fRG dynamics that delineates the various magnetic and $d$-wave superconducting regimes of the Hubbard model. We further present a Dynamic Mode Decomposition analysis that confirms that a small number of modes are indeed sufficient to capture the fRG dynamics. Our work demonstrates the possibility of using artificial intelligence to extract compact representations of the 4-point vertex functions for correlated electrons, a goal of utmost importance for the success of cutting-edge quantum field theoretical methods for tackling the many-electron problem.

cond-mat.str-el↗

arXiv2023

Nature of unconventional pairing in the kagome superconductors AV$_3$Sb$_5$

The recent discovery of AV$_3$Sb$_5$ (A=K,Rb,Cs) has uncovered an intriguing arena for exotic Fermi surface instabilities in a kagome metal. Among them, superconductivity is found in the vicinity of multiple van Hove singularities, exhibiting indications of unconventional pairing. We show that the sublattice interference mechanism is central to understanding the formation of superconductivity in a kagome metal. Starting from an appropriately chosen minimal tight-binding model with multiple with multiple van Hove singularities close to the Fermi level for AV$_3$Sb$_5$, we provide a random phase approximation analysis of superconducting instabilities. Non-local Coulomb repulsion, the sublattice profile of the van Hove bands, and the bare interaction strength turn out to be the crucial parameters to determine the preferred pairing symmetry. Implications for potentially topological surface states are discussed, along with a proposal for additional measurements to pin down the nature of superconductivity in AV$_3$Sb$_5$.

cond-mat.supr-con↗

arXiv2023

Electronic correlations and universal long-range scaling in kagome metals

We investigate the real-space profile of effective Coulomb interactions in correlated kagome materials. By particularizing to KV$_3$Sb$_5$, Co$_3$Sn$_2$S$_2$, FeSn, and Ni$_3$In, we analyze representative cases that exhibit a large span of correlation-mediated phenomena, and contrast them to prototypical prevoskite transition metal oxides. From our constrained random phase approximation studies we find that the on-site interaction strength in kagome metals not only depends on the screening processes at high energy, but also on the low-energy hybriziation profile of the electronic density of states. Our results indicate that rescaled by the onsite interaction amplitude, all kagome metals exhibit a universal long-range Coulomb behaviour.

cond-mat.str-el↗

arXiv2023

Heterogeneous Ta-dichalcogenide bilayer: heavy fermions or doped Mott physics?

Controlling and understanding electron correlations in quantum matter is one of the most challenging tasks in materials engineering. In the past years a plethora of new puzzling correlated states have been found by carefully stacking and twisting two-dimensional van der Waals materials of different kind. Unique to these stacked structures is the emergence of correlated phases not foreseeable from the single layers alone. In Ta-dichalcogenide heterostructures made of a good metallic 1H- and a Mott-insulating 1T-layer, recent reports have evidenced a cross-breed itinerant and localized nature of the electronic excitations, similar to what is typically found in heavy fermion systems. Here, we put forward a new interpretation based on first-principles calculations which indicates a sizeable charge transfer of electrons (0.4-0.6 e) from 1T to 1H layers at an elevated interlayer distance. We accurately quantify the strength of the interlayer hybridization which allows us to unambiguously determine that the system is much closer to a doped Mott insulator than to a heavy fermion scenario. Ta-based heterolayers provide therefore a new ground for quantum-materials engineering in the regime of heavily doped Mott insulators hybridized with metallic states at a van der Waals distance.

cond-mat.str-el↗

arXiv2023

Dynamics and Resilience of the Charge Density Wave in a bilayer kagome metal

Long-range electronic order descending from a metallic parent state constitutes a rich playground to study the intricate interplay of structural and electronic degrees of freedom. With dispersive and correlation features as multifold as topological Dirac-like itinerant states, van-Hove singularities, correlated flat bands, and magnetic transitions at low temperature, kagome metals are located in the most interesting regime where both phonon and electronically mediated couplings are significant. Several of these systems undergo a charge density wave (CDW) transition, and the van-Hove singularities, which are intrinsic to the kagome tiling, have been conjectured to play a key role in mediating such an instability. However, to date, the origin and the main driving force behind this charge order is elusive. Here, we use the topological bilayer kagome metal ScV6Sn6 as a platform to investigate this puzzling problem, since it features both kagome-derived nested Fermi surface and van-Hove singularities near the Fermi level, and a CDW phase that affects the susceptibility, the neutron scattering, and the specific heat, similarly to the siblings AV3Sb5 (A = K, Rb, Cs) and FeGe. We report on our findings from high-resolution angle-resolved photoemission, density functional theory, and time-resolved optical spectroscopy to unveil the dynamics of its CDW phase. We identify the structural degrees of freedom to play a fundamental role in the stabilization of charge order. Along with a comprehensive analysis of the subdominant impact from electronic correlations, we find ScV6Sn6 to feature an instance of charge density wave order that predominantly originates from phonons. As we shed light on the emergent phonon profile in the low-temperature ordered regime, our findings pave the way for a deeper understanding of ordering phenomena in all CDW kagome metals.

cond-mat.str-el↗

arXiv2022

Moiré pattern formation in epitaxial growth on a covalent substrate: Sb on InSb(111)A

Structural moiré superstructures arising from two competing lattices may lead to unexpected electronic behavior, such as superconductivity or Mottness. Most investigated moiré heterostructures are based on van der Waals (vdW) materials, as strong interface interactions typically lead to the formation of strained films or regular surface reconstructions. Here we successfully synthesize ultrathin Sb films, that are predicted to show thickness-dependent topological properties, on semi-insulating InSb(111)A. Despite the covalent nature of the substrate surface, we prove by scanning transmission electron microscopy (STEM) that already the first layer of Sb atoms grows completely unstrained, while azimuthally aligned. Rather than compensating the lattice mismatch of -6.4% by structural modifications, the Sb films form a pronounced moiré pattern as we evidence by scanning tunneling microscopy (STM) topography up to film thicknesses of several bilayers. Our model calculations based on density functional theory (DFT) assign the moiré pattern to a periodic surface corrugation. In agreement with DFT predictions, irrespective of the moiré modulation, the topological surface state known on thick Sb film is experimentally confirmed to persist down to low film thicknesses, and the Dirac point shifts towards lower binding energies with decreasing Sb thickness.

cond-mat.mtrl-sci↗

arXiv2022

Topological band inversion in HgTe(001): surface and bulk signatures from photoemission

HgTe is a versatile topological material and has enabled the realization of a variety of topological states, including two- and three-dimensional (3D) topological insulators and topological semimetals. Nevertheless, a quantitative understanding of its electronic structure remains challenging, in particular due to coupling of the Te 5p-derived valence electrons to Hg 5d core states at shallow binding energy. We present a joint experimental and theoretical study of the electronic structure in strained HgTe(001) films in the 3D topological-insulator regime, based on angle-resolved photoelectron spectroscopy and density functional theory. The results establish detailed agreement in terms of (i) electronic band dispersions and orbital symmetries, (ii) surface and bulk contributions to the electronic structure, and (iii) the importance of Hg 5d states in the valence-band formation. Supported by theory, our experiments directly image the paradigmatic band inversion in HgTe, underlying its non-trivial band topology.

cond-mat.mtrl-sci↗

arXiv2022

Aberration of the Green's function estimator in hybridization expansion continuous-time quantum Monte Carlo

We describe an aberration of the resampling estimator for the Green's function customarily used in hybridization expansion continuous-time quantum Monte Carlo. It occurs due to Pauli principle constraints in calculations of Anderson impurity models with baths consisting of a discrete energy spectrum. We identify the missing Feynman diagrams, characterize the affected models and discuss implications as well as solutions. This issue does not occur when using worm sampling or in the presence of continuous baths. However certain energy spectra can be inherently close to a discrete limit, and we explain why autocorrelation times can become very large in these cases.

cond-mat.str-el↗

arXiv2022

Coulomb Engineering of two-dimensional Mott materials

Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.

cond-mat.str-el↗

arXiv2022

Real-space Obstruction in Quantum Spin Hall Insulators

The recently introduced classification of two-dimensional insulators in terms of topological crystalline invariants has been applied so far to "obstructed" atomic insulators characterized by a mismatch between the centers of the electronic Wannier functions and the ionic positions. We extend this notion to quantum spin Hall insulators in which the ground state cannot be described in terms of time-reversal symmetric localized Wannier functions. A system equivalent to graphene in all its relevant electronic and topological properties except for a real-space obstruction is identified and studied via symmetry analysis as well as with density functional theory. The low-energy model comprises a local spin-orbit coupling and a non-local symmetry breaking potential, which turn out to be the essential ingredients for an obstructed quantum spin Hall insulator. An experimental fingerprint of the obstruction is then measured in a large-gap triangular quantum spin Hall material.

cond-mat.mes-hall↗

arXiv2022

Hard x-ray angle-resolved photoemission from a buried high-mobility electron system

Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show that a high-mobility quasi-two-dimensional electron system with strong spin-orbit coupling can be induced at the surface of a KTaO$_3$ (001) crystal by pulsed laser deposition of a disordered LaAlO$_3$ film. The momentum-resolved electronic structure of the buried electron system is mapped out by hard x-ray angle-resolved photoelectron spectroscopy. From a comparison to calculations it is found that the band structure deviates from that of electron-doped bulk KTaO$_3$ due to the confinement to the interface. Nevertheless, the Fermi surface appears to be clearly three-dimensional. From the $k$ broadening of the Fermi surface and core-level depth profiling we estimate the extension of the electron system to be at least 1 nm but not much larger than 2 nm, respectively.

cond-mat.str-el↗

arXiv2022

Recipe for higher-order topology on the triangular lattice

We present a recipe for an electronic 2D higher order topological insulator (HOTI) on the triangular lattice that can be realized in a large family of materials. The essential ingredient is mirror symmetry breaking, which allows for a finite quadrupole moment and trivial $\mathbb{Z}_2$ index. The competition between spin-orbit coupling and the symmetry breaking terms gives rise to four topologically distinct phases; the HOTI phase appears when symmetry breaking dominates, including in the absence of spin-orbit coupling. We identify triangular monolayer adsorbate systems on the (111) surface of zincblende/diamond type substrates as ideal material platforms and predict the HOTI phase for $X=$(Al,B,Ga) on SiC.

cond-mat.mes-hall↗

arXiv2022

Mott Quantum Critical Points at finite doping

Strongly correlated materials often undergo a Mott metal-insulator transition, which is tipically first-order, as a function of control parameters like pressure. Upon doping, rich phase diagrams with competing instabilities are found. Yet, the conceptual link between the interaction-driven Mott transition and the finite-doping behavior lacks a clear connection with the theory of critical phenomena. In a prototypical case of a first-order Mott transition the surface associated with the equation of state for the homogeneous system is "folded" so that in a range of parameters stable metallic and insulating phases exist and are connected by an unstable metallic branch. Here we show that tuning the chemical potential the zero-temperature equation of state gradually unfolds. Under general conditions, we find that the Mott transition evolves into a first-order transition between two metals, associated to a phase separation region ending in a quantum critical point (QCP) at finite doping. This scenario is here demonstrated solving a simple multi-orbital Hubbard model relevant for the Iron-based superconductors, but its origin - the splitting of the atomic ground state multiplet by a small energy scale, here Hund's coupling - is much more general. A strong analogy with cuprate superconductors is traced.

cond-mat.str-el↗

arXiv2022

Toward Functionalized Ultrathin Oxide Films: the Impact of Surface Apical Oxygen

Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically considered to be ideally terminated with the stoichiometric composition. Using the prototypical correlated metal SrVO$_3$ as an example, it is demonstrated that this idealized description overlooks an essential ingredient: oxygen adsorbing at the surface apical sites. The oxygen adatoms, which persist even in an ultrahigh vacuum environment, are shown to severely affect the intrinsic electronic structure of a transition metal oxide film. Their presence leads to the formation of an electronically dead surface layer but also alters the band filling and the electron correlations in the thin films. These findings highlight that it is important to take into account surface apical oxygen or -- mutatis mutandis -- the specific oxygen configuration imposed by a capping layer to predict the behavior of ultrathin films of transition metal oxides near the single unit-cell limit.

cond-mat.mtrl-sci↗

arXiv2021

Van Hove tuning of AV3Sb5 kagome metals under pressure and strain

From first-principles calculations, we investigate the structural and electronic properties of the kagome metals AV3Sb5 (A = Cs, K, Rb) under isotropic and anisotropic pressure. Charge ordering patterns are found to be unanimously suppressed, while there is a significant rearrangement of p-type and m-type van Hove point energies with respect to the Fermi level. Already for moderate tensile strain along the V plane and compressive strain normal to the V layer, we find that a van Hove point can be shifted to the Fermi energy. Such a mechanism provides an invaluable tuning knob to alter the correlation profile in the kagome metal, and suggests itself for further experimental investigation. It might allow to reconcile possible multi-dome superconductivity in kagome metals not only from phonons, but also from the viewpoint of unconventional pairing.

cond-mat.supr-con↗

arXiv2021

Twofold van Hove singularity and origin of charge order in topological kagome superconductor CsV3Sb5

The layered vanadium antimonides AV3Sb5 (A = K, Rb, Cs) are a recently discovered family of topological kagome metals with a rich phenomenology of strongly correlated electronic phases including charge order and superconductivity. Understanding how the singularities inherent to the kagome electronic structure are linked to the observed many-body phases is a topic of great interest and relevance. Here, we combine angle-resolved photoemission spectroscopy and density functional theory to reveal multiple kagome-derived van Hove singularities (vHs) coexisting near the Fermi level of CsV3Sb5 and analyze their contribution to electronic symmetry breaking. Intriguingly, the vHs in CsV3Sb5 have two distinct flavors - p-type and m-type - which originate from their pure and mixed sublattice characters, respectively. This twofold vHs is unique property of the kagome lattice, and its flavor critically determines the pairing symmetry and ground states emerging in AV3Sb5 series. We establish that, among the multiple vHs in CsV3Sb5, the m-type vHs of the dxz/dyz kagome band and the p-type vHs of the dxy/dx2-y2 kagome band cross the Fermi level to set the stage for electronic symmetry breaking. The former band exhibits pronounced Fermi surface nesting, while the latter contributes via higher-order vHs. Our work reveals the essential role of kagome-derived vHs for the collective phenomena realized in the AV3Sb5 family, paving the way to a deeper understanding of strongly correlated topological kagome systems.

cond-mat.str-el↗