arXiv subjects

Giovanni Finocchio

Publications and source records attributed to Giovanni Finocchio.

At least 37 records · Page 2Linked to original sources

arXiv2025

Spintronic temperature nanosensor based on the resonance response of a skyrmion-hosting magnetic tunnel junction

The increasing need for efficient thermal management in nanoelectronics requires innovative thermal sensing solutions, as conventional sensors often exhibit nonlinear responses, low sensitivity, and complex calibration. We predict a temperature dependence in the response of existing skyrmion based spintronic diodes and propose their use as nanoscale thermal sensors. These devices leverage magnetic skyrmions topologically protected spin textures known for their robustness, nanoscale dimensions, and low power dynamics. We demonstrate high thermal sensitivity with a linear temperature response over a wide range. This linearity, observed in both the amplitude and frequency of the skyrmion excitation, ensures redundancy that enables precise and reliable temperature measurement. In addition, the use of multilayer systems enhances the sensitivity and robustness of the device. These results provide a foundation for skyrmion-based caloritronic devices with promising applications in spintronic sensors, thermal management, nanoelectronics, and skyrmion-caloritronics.

cond-mat.mes-hall↗

arXiv2025

Pushing the Boundary of Quantum Advantage in Hard Combinatorial Optimization with Probabilistic Computers

Recent demonstrations on specialized benchmarks have reignited excitement for quantum computers, yet whether they can deliver an advantage for practical real-world problems remains an open question. Here, we show that probabilistic computers (p-computers), when co-designed with hardware to implement powerful Monte Carlo algorithms, provide a compelling and scalable classical pathway for solving hard optimization problems. We focus on two key algorithms applied to 3D spin glasses: discrete-time simulated quantum annealing (DT-SQA) and adaptive parallel tempering (APT). We benchmark these methods against the performance of a leading quantum annealer on the same problem instances. For DT-SQA, we find that increasing the number of replicas improves residual energy scaling, in line with expectations from extreme value theory. We then show that APT, when supported by non-local isoenergetic cluster moves, exhibits a more favorable scaling and ultimately outperforms DT-SQA. We demonstrate these algorithms are readily implementable in modern hardware, projecting that custom Field Programmable Gate Arrays (FPGA) or specialized chips can leverage massive parallelism to accelerate these algorithms by orders of magnitude while drastically improving energy efficiency. Our results establish a new, rigorous classical baseline, clarifying the landscape for assessing a practical quantum advantage and presenting p-computers as a scalable platform for real-world optimization challenges.

quant-ph↗

arXiv2025

250 Magnetic Tunnel Junctions-Based Probabilistic Ising Machine

In combinatorial optimization, probabilistic Ising machines (PIMs) have gained significant attention for their acceleration of Monte Carlo sampling with the potential to reduce time-to-solution in finding approximate ground states. However, to be viable in real applications, further improvements in scalability and energy efficiency are necessary. One of the promising paths toward achieving this objective is the development of a co-design approach combining different technology layers including device, circuits and algorithms. Here, we experimentally demonstrate a fully connected PIM architecture based on 250 spin-transfer torque magnetic tunnel junctions (STT-MTJs), interfaced with an FPGA. Our computing approach integrates STT-MTJ-based tunable true random number generators with advanced annealing techniques, enabling the solution of problems with any topology and size. For sparsely connected graphs, the massive parallel architecture of our PIM enables a cluster parallel update method that overcomes the serial limitations of Gibbs sampling, leading to a 10 times acceleration without hardware changes. Furthermore, we prove experimentally that the simulated quantum annealing boosts solution quality 20 times over conventional simulated annealing while also increasing robustness to MTJ variability. Short pulse switching measurements indicate that STT-MTJ-based PIMs can potentially be 10 times faster and 10 times more energy-efficient than graphic processing units, which paves the way for future large-scale, high-performance, and energy-efficient unconventional computing hardware implementations.

cond-mat.mtrl-sci↗

arXiv2025

Extended-variable probabilistic computing with p-dits

Ising machines can solve combinatorial optimization problems by representing them as energy minimization problems. A common implementation is the probabilistic Ising machine (PIM), which uses probabilistic (p-) bits to represent coupled binary spins. However, many real-world problems have complex data representations that do not map naturally into a binary encoding, leading to a significant increase in hardware resources and time-to-solution. Here, we describe a generalized spin model that supports an arbitrary number of spin dimensions, each with an arbitrary real component. We define the probabilistic d-dimensional bit (p-dit) as the base unit of a p-computing implementation of this model. We further describe two restricted forms of p-dits for specific classes of common problems and implement them experimentally on an application-specific integrated circuit (ASIC): (A) isotropic p-dits, which simplify the implementation of categorical variables resulting in ~34x performance improvement compared to a p-bit implementation on an example 3-partition problem. (B) Probabilistic integers (p-ints), which simplify the representation of numeric values and provide ~5x improvement compared to a p-bit implementation of an example integer linear programming (ILP) problem. Additionally, we report a field-programmable gate array (FPGA) p-int-based integer quadratic programming (IQP) solver which shows ~64x faster time-to-solution compared to the best of a series of state-of-the-art software solvers. The generalized formulation of probabilistic variables presented here provides a path to solving large-scale optimization problems on various hardware platforms including digital CMOS.

physics.app-ph↗

arXiv2025

Spin-Torque-Driven Non-uniform Dynamics of an Antivortex Core in Truncated Astroid Shaped Nanomagnets

Spin textures that are not readily available in the domain structures of continuous magnetic thin films can be stabilized when patterned to micro/nano scales due to the dominant effect of dipolar magnetic interactions. Fabrication of such devices enables a thorough study of their RF dynamics excited by highly concentrated spin-polarized/pure-spin currents. For this purpose, in this study, we have employed a truncated astroid geometry to achieve stable magnetic antivortex core nucleation/annihilation which was detectable using the anisotropic magnetoresistance (AMR) at various temperatures. Furthermore, by depositing a soft magnetic thin film (20 nm thick permalloy) capped with a heavy-metal 2nm Pt layer, we were able to probe the spin orbit torque induced excitations accompanied by self-torque due to half-antivortex cores reminiscent of an isolated-antivortex, yielding GHz frequency oscillations with high quality factors (~50000). The observed RF oscillations can be attributed to a non-uniform domain wall oscillation mode close to the stable-antivortex core nucleation site as seen in micromagnetic simulations. This fundamental study of antivortex core response to spin currents is crucial for the assessment of their potential applications in high frequency spintronic devices such as reservoir computers.

cond-mat.mes-hall↗

arXiv2025

High-performance and reliable probabilistic Ising machine based on simulated quantum annealing

Probabilistic computing with pbits is emerging as a computational paradigm for machine learning and for facing combinatorial optimization problems (COPs) with the so-called probabilistic Ising machines (PIMs). From a hardware point of view, the key elements that characterize a PIM are the random number generation, the nonlinearity, the network of coupled pbits, and the energy minimization algorithm. Regarding the latter, in this work we show that PIMs using the simulated quantum annealing (SQA) schedule exhibit better performance as compared to simulated annealing and parallel tempering in solving a number of COPs, such as maximum satisfiability problems, planted Ising problem, and travelling salesman problem. Additionally, we design and simulate the architecture of a fully connected CMOS based PIM able to run the SQA algorithm having a spin-update time of 8 ns with a power consumption of 0.22 mW. Our results also show that SQA increases the reliability and the scalability of PIMs by compensating for device variability at an algorithmic level enabling the development of their implementation combining CMOS with different technologies such as spintronics. This work shows that the characteristics of the SQA are hardware agnostic and can be applied in the co-design of any hybrid analog digital Ising machine implementation. Our results open a promising direction for the implementation of a new generation of reliable and scalable PIMs.

cond-mat.mes-hall↗

arXiv2025

Spin wave eigenmodes in nanoscale magnetic tunnel junctions with perpendicular magnetic anisotropy

Magnetic tunnel junctions (MTJs) are key enablers of spintronic technologies used in a variety of applications including information storage, microwave generation and detection, as well as unconventional computing. Here, we present experimental and theoretical studies of quantized spin wave eigenmodes in perpendicular MTJs focusing on a coupled magnetization dynamics in the free (FL) and reference (RL) layers of the MTJ, where the RL is a synthetic antiferromagnet (SAF). Spin-torque ferromagnetic resonance (ST-FMR) measurements reveal excitation of two spin wave eigenmodes in response to applied microwave current. These modes show opposite frequency shifts as a function of out-of-plane magnetic field. Our micromagnetic simulations accurately reproduce the dependence of the mode frequencies on magnetic field and reveal the spatial profiles of the excitations in the FL and RL. The FL and RL modes generate rectified voltage signals of opposite polarity, which makes this device a promising candidate for a tunable dual-frequency microwave signal detector. The simulations show that weak interlayer exchange coupling within the SAF enhances the mode amplitudes. We also calculate the response of the detector as a function of in-plane magnetic field bias and find that its sensitivity significantly increases with increasing field. We experimentally confirm this prediction via ST-FMR measurements as a function of in-plane magnetic field. Our results provide deeper understanding of quantized spin wave eigenmodes in nanoscale MTJs with perpendicular magnetic anisotropy and demonstrate the potential of these devices for frequency-selective dual-channel microwave signal detectors.

cond-mat.mes-hall↗

arXiv2025

Skyrmions in Nanotechnology: Fundamental Properties, Experimental Advances, and Emerging Applications

Skyrmions, topologically protected textures, have been observed in different fields of nanotechnology and have emerged as promising candidates for different applications due to their topological stability, low-power operation, and dynamic response to external stimuli. First introduced in particle physics, skyrmions have since been observed in different condensed matter fields, including magnetism, ferroelectricity, photonics, and acoustics. Their unique topological properties enable robust manipulation and detection, paving the way for innovative applications in room temperature sensing, storage, and computing. Recent advances in materials engineering and device integration have demonstrated several strategies for an efficient manipulation of skyrmions, addressing key challenges in their practical implementation. In this review, we summarize the state-of-the-art research on skyrmions across different platforms, highlighting their fundamental properties and characteristics, recent experimental breakthroughs, and technological potential. We present future perspectives and remaining challenges, emphasizing the interdisciplinary impact of skyrmions on nanotechnology.

cond-mat.mes-hall↗

arXiv2025

Topological spin-torque diode effect in skyrmion-based magnetic tunnel junctions

The growing market and massive use of Internet of Things nodes is placing unprecedented demands of energy efficient hardware for edge computing and microwave devices. In particular, magnetic tunnel junctions (MTJs), as main building blocks of spintronic microwave technology, can offer a path for the development of compact and high-performance microwave detectors. On the other hand, the fascinating field of skyrmionics is bridging together concepts from topology and spintronics. Here, we show the proof of concept of the direct electrical excitation and detection of the dynamics of a topological protected magnetic texture, i.e. skyrmion at room temperature and for a wide region of applied fields, including the zero field case. This topological spin torque diode is realized with an MTJ on top of a skyrmionic material. Quantitative Magnetic Force Microscopy measurements are employed to confirm the existence of a single skyrmion in the MTJ free layer. Spin torque diode electrical measurements show the electrical excitation via spin transfer torque (STT) of a skyrmion resonant mode with frequencies near 4 GHz and a selectivity one order of magnitude smaller than the uniform modes excited in the same device. Micromagnetic simulations identify these dynamics with the excitation of the breathing mode and point out the role of thickness dependent magnetic parameters (magnetic anisotropy field and Dzyaloshinkii Moriya interaction) in both stabilizing and exciting the magnetic skyrmions. This work marks a milestone for the development of topological spin torque diodes.

cond-mat.mes-hall↗

arXiv2024

Integrated probabilistic computer using voltage-controlled magnetic tunnel junctions as its entropy source

Probabilistic Ising machines (PIMs) provide a path to solving many computationally hard problems more efficiently than deterministic algorithms on von Neumann computers. Stochastic magnetic tunnel junctions (S-MTJs), which are engineered to be thermally unstable, show promise as entropy sources in PIMs. However, scaling up S-MTJ-PIMs is challenging, as it requires fine control of a small magnetic energy barrier across large numbers of devices. In addition, non-spintronic components of S-MTJ-PIMs to date have been primarily realized using general-purpose processors or field-programmable gate arrays. Reaching the ultimate performance of spintronic PIMs, however, requires co-designed application-specific integrated circuits (ASICs), combining CMOS with spintronic entropy sources. Here we demonstrate an ASIC in 130 nm foundry CMOS, which implements integer factorization as a representative hard optimization problem, using PIM-based invertible logic gates realized with 1143 probabilistic bits. The ASIC uses stochastic bit sequences read from an adjacent voltage-controlled (V-) MTJ chip. The V-MTJs are designed to be thermally stable in the absence of voltage, and generate random bits on-demand in response to 10 ns pulses using the voltage-controlled magnetic anisotropy effect. We experimentally demonstrate the chip's functionality and provide projections for designs in advanced nodes, illustrating a path to millions of probabilistic bits on a single CMOS+V-MTJ chip.

physics.app-ph↗

arXiv2024

Connecting physics to systems with modular spin-circuits

An emerging paradigm in modern electronics is that of CMOS + $\sf X$ requiring the integration of standard CMOS technology with novel materials and technologies denoted by $\sf X$. In this context, a crucial challenge is to develop accurate circuit models for $\sf X$ that are compatible with standard models for CMOS-based circuits and systems. In this perspective, we present physics-based, experimentally benchmarked modular circuit models that can be used to evaluate a class of CMOS + $\sf X$ systems, where $\sf X$ denotes magnetic and spintronic materials and phenomena. This class of materials is particularly challenging because they go beyond conventional charge-based phenomena and involve the spin degree of freedom which involves non-trivial quantum effects. Starting from density matrices $-$ the central quantity in quantum transport $-$ using well-defined approximations, it is possible to obtain spin-circuits that generalize ordinary circuit theory to 4-component currents and voltages (1 for charge and 3 for spin). With step-by-step examples that progressively become more complex, we illustrate how the spin-circuit approach can be used to start from the physics of magnetism and spintronics to enable accurate system-level evaluations. We believe the core approach can be extended to include other quantum degrees of freedom like valley and pseudospins starting from corresponding density matrices.

cond-mat.mes-hall↗

arXiv2024

A design of magnetic tunnel junctions for the deployment of neuromorphic hardware for edge computing

The electrically readable complex dynamics of robust and scalable magnetic tunnel junctions (MTJs) offer promising opportunities for advancing neuromorphic computing. In this work, we present an MTJ design with a free layer and two polarizers capable of computing the sigmoidal activation function and its gradient at the device level. This design enables both feedforward and backpropagation computations within a single device, extending neuromorphic computing frameworks previously explored in the literature by introducing the ability to perform backpropagation directly in hardware. Our algorithm implementation reveals two key findings: (i) the small discrepancies between the MTJ-generated curves and the exact software-generated curves have a negligible impact on the performance of the backpropagation algorithm, (ii) the device implementation is highly robust to inter-device variation and noise, and (iii) the proposed method effectively supports transfer learning and knowledge distillation. To demonstrate this, we evaluated the performance of an edge computing network using weights from a software-trained model implemented with our MTJ design. The results show a minimal loss of accuracy of only 0.1% for the Fashion MNIST dataset and 2% for the CIFAR-100 dataset compared to the original software implementation. These results highlight the potential of our MTJ design for compact, hardware-based neural networks in edge computing applications, particularly for transfer learning.

physics.app-ph↗

arXiv2024

Nanoscale spin rectifiers for harvesting ambient radiofrequency energy

Radiofrequency harvesting using ambient wireless energy could be used to reduce the carbon footprint of electronic devices. However, ambient radiofrequency energy is weak (less than -20 dBm), and thermodynamic limits and high-frequency parasitic impedance restrict the performance of state-of-the-art radiofrequency rectifiers. Nanoscale spin rectifiers based on magnetic tunnel junctions have recently demonstrated high sensitivity, but suffer from a low a.c.-to-d.c. conversion efficiency (less than 1%). Here, we report a sensitive spin rectifier rectenna that can harvest ambient radiofrequency signals between -62 and -20 dBm. We also develop an on-chip co-planar waveguide-based spin rectifier array with a large zero-bias sensitivity (around 34,500 mV/mW) and high efficiency (7.81%). Self-parametric excitation driven by voltage-controlled magnetic anisotropy is a key mechanism that contributes to the performance of the spin-rectifier array. We show that these spin rectifiers can wirelessly power a sensor at a radiofrequency power of -27 dBm.

cond-mat.mtrl-sci↗

arXiv2024

Skyrmions in synthetic antiferromagnet nanorings for electrical signal generation

Current-driven magnetic skyrmions show promise as carriers of information bits in racetrack magnetic memory applications. Specifically, the utilization of skyrmions in synthetic antiferromagnetic (SAF) systems is highly attractive due to the potential to suppress the Skyrmion Hall effect, which causes a transverse displacement of driven skyrmions relative to the drift direction. In this study, we demonstrate, through analytical calculations and micromagnetic simulations, that in the case of a nanoring geometry, current-driven skyrmions achieve a stable circular motion with a constant frequency, which is a prerequisite for a skyrmion-based clock device. Notably, the operational frequency in a SAF nanoring surpasses that in a bilayer ferromagnetic-heavy metal nanoring and lies in the GHz regime for current densities of 20 MA/cm^2. We also find that the performance of skyrmions in SAF nanorings is comparable to that of radial Neel domain walls for low current densities (approximately 15 MA/cm^2) and low skyrmion densities (Nsk~6). Additionally, we introduce a novel skyrmionic three-phase AC alternator based on a SAF nanoring, which operates at frequencies in the GHz regime. Our findings underscore the potential of SAF nanorings as constituent materials in clock devices with tunable frequencies operating in the GHz regime

cond-mat.mes-hall↗

arXiv2024

Roadmap for Unconventional Computing with Nanotechnology

In the "Beyond Moore's Law" era, with increasing edge intelligence, domain-specific computing embracing unconventional approaches will become increasingly prevalent. At the same time, adopting a variety of nanotechnologies will offer benefits in energy cost, computational speed, reduced footprint, cyber resilience, and processing power. The time is ripe for a roadmap for unconventional computing with nanotechnologies to guide future research, and this collection aims to fill that need. The authors provide a comprehensive roadmap for neuromorphic computing using electron spins, memristive devices, two-dimensional nanomaterials, nanomagnets, and various dynamical systems. They also address other paradigms such as Ising machines, Bayesian inference engines, probabilistic computing with p-bits, processing in memory, quantum memories and algorithms, computing with skyrmions and spin waves, and brain-inspired computing for incremental learning and problem-solving in severely resource-constrained environments. These approaches have advantages over traditional Boolean computing based on von Neumann architecture. As the computational requirements for artificial intelligence grow 50 times faster than Moore's Law for electronics, more unconventional approaches to computing and signal processing will appear on the horizon, and this roadmap will help identify future needs and challenges. In a very fertile field, experts in the field aim to present some of the dominant and most promising technologies for unconventional computing that will be around for some time to come. Within a holistic approach, the goal is to provide pathways for solidifying the field and guiding future impactful discoveries.

cs.ET↗

arXiv2024

Dynamics of domain walls motion driven by spin-orbit torque in antiferromagnets

Ultrafast dynamics of antiferromagnetic materials is an appealing feature for novel spintronic devices. Several experiments have shown that both, the static states and the dynamical behavior of the antiferromagnetic order, are strictly related to stabilization of domains and domain wall (DW) motion. Hence for a quantitative understanding of statics and dynamics of multidomain states in antiferromagnetic materials a full micromagnetic framework is necessary. Here, we use this model to study the antiferromagnetic DW motion driven by the spin-orbit torque. The main result is the derivation of analytical expressions for the DW width and velocity that exhibit a very good agreement with the numerical simulations in a wide range of parameters. We also find that a mechanism limiting the maximum applicable current in an antiferromagnetic racetrack memory is the continuous nucleation of the domains from the edge, which is qualitatively different from what is observed in ferromagnetic racetracks.

cond-mat.mes-hall↗

arXiv2023

All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures were not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here we show three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn3, sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.

physics.app-ph↗

arXiv2023

Skyrmions in nanorings: a versatile platform for Skyrmionics

The dynamical properties of skyrmions can be exploited to build devices with new functionalities. Here, we first investigate a skyrmion-based ring-shaped device by means of micromagnetic simulations and Thiele equation. We subsequently show three applications scenarios: (1) a clock with tunable frequency that is biased with an electrical current having a radial spatial distribution, (2) an alternator, where the skyrmion circular motion driven by an engineered anisotropy gradient is converted into an electrical signal, and (3) an energy harvester, where the skyrmion motion driven by a thermal gradient is converted into an electrical signal, thus providing a heat recovery operation. We also show how to precisely tune the frequency and amplitude of the output electrical signals by varying material parameters, geometrical parameters, number and velocity of skyrmions, and we further prove the correct device functionality under realistic conditions given by room temperature and internal material defects. Our results open a new route for the realization of energy efficient nanoscale clocks, generators, and energy harvesters.

cond-mat.mes-hall↗