arXiv subjects

Girish C. Tewari

Publications and source records attributed to Girish C. Tewari.

3 recordsLinked to original sources

arXiv2023

Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$

We have performed magneto-transport and high-resolution angle-resolved photoelectron spectroscopy (ARPES) measurements on palladium (Pd) doped topological insulator Pd$_{x}$Bi$_{2}$Te$_{3}$ (0 $\leq$ x $\leq$ 0.20) single crystals. We have observed unusually high values of magnetoresistance ($\sim$ 1500%) and mobility ($\sim$ 93000 cm$^{2}$V$^{-1}$s$^{-1}$) at low temperatures for pristine Bi2Te3 that decrease on Pd doping. The Shubnikov-de Haas (SdH) oscillations have been detected for x = 0.05, 0.10, confirming the presence of 2D topological surface states (TSSs) for these samples. The Hall measurement shows the crossover from n-type charge carriers in pristine Bi$_{2}$Te$_{3}$ to p-type charge carriers upon Pd doping. The ARPES measurements show that the conduction band crosses the Fermi level for pristine Bi$_{2}$Te$_{3}$, and the Dirac point of the TSSs and bulk-derived valence bands indicated shift to lower binding energy upon Pd doping in a rigid-band-like way up to x $\sim$0.10. Based on the comparison of the parameters obtained from the SdH and ARPES measurements, the reduction in the kF value in the magneto-transport measurements likely due to the band bending induced by the Schottky barrier.

cond-mat.str-el↗

arXiv2020

Fe3Se4: A Possible Ferrimagnetic Half-Metal?

Half-metallic ferromagnets show 100% spin-polarization at the Fermi level and are ideal candidates for spintronic applications. Despite the extensive research in the field, very few materials have been discovered so far. Here we present results of electronic band structure calculations based on density functional theory and extensive physical-property measurements for Fe3Se4 revealing signatures of half-metallicity. The spin-polarized electronic band structure calculations predict half-metallic ferrimagnetism for Fe3Se4. The electrical resistivity follows exponentially suppressed electron-magnon scattering mechanism in the low-temperature regime and show a magnetoresistance effect that changes the sign from negative to positive with decreasing temperature around 100 K. Other intriguing observations include the anomalous behavior of Hall resistance below 100 K and an anomalous Hall coefficient that roughly follows the \r{ho}2 behavior.

cond-mat.str-el↗

arXiv2016

Finite Size Effect in Amorphous Indium oxide

We study the low temperature magneto-transport properties of several highly disordered amorphous Indium oxide(a:InO) samples. Simultaneously fabricated devices comprising a 2-dimensional (2D) film and 10 $μ$m long wires of different widths were measured to investigate the effect of size as we approach the 1D limit, which is around 4 times the correlation length, and happens to be around 100 nm for a:InO. The film and the wires showed magnetic field ({\it B}) induced superconductor to insulator transition (SIT). In the superconducting side, the resistance increased with decrease in wire width, whereas, an opposite trend is observed in the insulating side. We find that this effect can be explained in light of charge-vortex duality picture of the SIT. Resistance of the 2D film follows an activated behavior over the temperature ($T$), whereas, the wires show a crossover from the high-$T$ activated to a $T$-independent behavior. At high temperature regime the wires' resistance follow the film's until they deviate and became independent of $T$. We find that temperature at which this deviation occurs evolve with magnetic field and the width of the wire, which show the effect of finite size on the transport.

cond-mat.mes-hall↗