arXiv subjects

Giuseppe De Robertis

Publications and source records attributed to Giuseppe De Robertis.

5 recordsLinked to original sources

arXiv2026

Influence of Radiation and AC Coupling on Time Performance of Analog Pixels Test Structures in 65 nm CMOS technology

Monolithic Active Pixel Sensors (MAPS) in advanced CMOS imaging technologies are key to next-generation tracking systems for high-energy physics, where radiation hardness and precise vertex reconstruction are essential. As part of the ALICE ITS3 R&D program in synergy with the CERN R&D, we evaluated the performance of the Analog Pixel Test Structures (APTS) fabricated in the TPSCo 65 nm CMOS imaging process. The prototypes employ 10 um pitch pixels with a fast operational amplifier-based buffering stage at the output, enabling direct characterization of intrinsic sensor response. Beam tests with minimum ionizing particles assessed the timing and charge collection of DC- and AC-coupled designs, including devices exposed to 10^14 NIEL and 10^15 NIEL non ioninsing energy loss. DC-coupled sensors demonstrated stable performance, maintaining time resolution lower than 70 ps and >99% detection efficiency up to 10^15 NIEL. AC-coupled sensors demonstrated a wide operational margin, with efficiencies above 99% for clusterization thresholds below 150 electrons. Even though the AC coupling allows higher reverse bias than DC-coupled sensors, the reduced signal amplitude lowers the signal-to-noise ratio, increasing the jitter contribution. At high reverse bias, the AC-coupled sensors achieve time resolutions comparable to the DC-coupled version, demonstrating the viability of both approaches. These results also suggest that combining the low capacitance of DC-coupled designs with the high-bias capability of AC coupling could further enhance time resolution. These results confirm the suitability of 65 nm MAPS for future collider detectors requiring high radiation tolerance, efficiency, and timing precision.

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arXiv2026

Development of a Cherenkov-Based Time-of-Flight Detector Using Silicon Photomultipliers

The aim of this work is to develop high precision Time-of-Flight (TOF) devices based on high refractive index solid Cherenkov radiators read out by silicon photomultipliers (SiPMs). Cherenkov light is prompt and therefore ideal for reaching the intrinsic timing limits of TOF systems. By utilizing a thin, high-refractive-index radiator a nearly instantaneous signal is generated by particles exceeding the Cherenkov threshold. In order to achieve the ultimate time resolution, we carried out a rigorous optimization of the radiator material and geometry, alongside the efficiency of the optical coupling to the SiPM sensors. The key factors limiting the time resolution were characterized by comprehensive Monte Carlo simulations, subsequently validated against experimental beam test data. We assembled small-scale prototypes instrumented with various Hamamatsu SiPM arrays sensors with pitches ranging from 1.3 to 3 mm coupled with various window materials, such as fused silica and MgF2, featuring various thickness values. The prototypes were successfully tested in beam test campaigns at the CERN-PS T10 beam line. The data were collected with a complete chain of front-end and readout electronics based on either the Petiroc 2A or the Radioroc 2 interfaced to a picoTDC to measure charges and times. By comparing the time measurements with two SiPM arrays we were able to measure a time resolution better than 33.2 ps at the full system level with a charged particle detection efficiency of 100%. Our results demonstrate the expected performance benchmarks for the charged particle detection efficiency and time resolution and highlight the potential of the developed Cherenkov-based TOF detectors for next-generation particle identification systems.

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arXiv2025

Characterisation of the first wafer-scale prototype for the ALICE ITS3 upgrade: the monolithic stitched sensor (MOSS)

This paper presents the characterisation and testing of the first wafer-scale monolithic stitched sensor (MOSS) prototype developed for the ALICE ITS3 upgrade that is to be installed during the LHC Long Shutdown 3 (2026-2030). The MOSS chip design is driven by the truly cylindrical detector geometry that imposes that each layer is built out of two wafer-sized, bent silicon chips. The stitching technique is employed to fabricate sensors with dimensions of 1.4 $\times$ 25.9 cm, thinned to 50 $μ$m. The chip architecture, in-pixel front-end, laboratory and in-beam characterisation, susceptibility to single-event effects, and series testing are discussed. The testing campaign validates the design of a wafer-scale stitched sensor and the performance of the pixel matrix to be within the ITS3 requirements. The MOSS chip demonstrates the feasibility of the ITS3 detector concept and provides insights for further optimisation and development.

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arXiv2024

Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process

In the context of the CERN EP R&D on monolithic sensors and the ALICE ITS3 upgrade, the Tower Partners Semiconductor Co (TPSCo) 65 nm process has been qualified for use in high energy physics, and adopted for the ALICE ITS3 upgrade. An Analog Pixel Test Structure (APTS) featuring fast per pixel operational-amplifier-based buffering for a small matrix of four by four pixels, with a sensor with a small collection electrode and a very non-uniform electric field, was designed to allow detailed characterization of the pixel performance in this technology. Several variants of this chip with different pixel designs have been characterized with a (120 GeV/$c$) positive hadron beam. This result indicates that the APTS-OA prototype variants with the best performance achieve a time resolution of 63 ps with a detection efficiency exceeding 99% and a spatial resolution of 2 $μ$m, highlighting the potential of TPSCo 65nm CMOS imaging technology for high-energy physics and other fields requiring precise time measurement, high detection efficiency, and excellent spatial resolution.

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arXiv2019

Diamond-Like Carbon for the Fast Timing MPGD

The present generation of Micro-Pattern Gaseous Detectors (MPGDs) are radiation hard detectors, capable of detecting efficiently particle rates of several MHz/cm$^2$ , while exhibiting good spatial resolution ($\leq$ 50 $μ$m) and modest time resolution of 5-10 ns, which satisfies the current generation of experiments (High Luminosity LHC upgrades of CMS and ATLAS) but it is not sufficient for bunch crossing identification of fast timing systems at FCC- hh. Thanks to the application of thin resistive films such as Diamond-Like Carbon (DLC) a new detector concept was conceived: Fast Timing MPGD (FTM). In the FTM the drift volume of the detector has been divided in several layers each with their own amplification structure. The use of resistive electrodes makes the entire structure transparent for electrical signals. After some first initial encouraging results, progress has been slowed down due to problems with the wet-etching of DLC-coated polyimide foils. To solve these problems a more in-depth knowledge of the internal stress of the DLC together with the DLC-polyimide adhesion is required. We will report on the production of DLC films produced in Italy with Ion Beam Sputtering and Pulsed Laser Deposition, where we are searching to improve the adhesion of the thin DLC films, combined with a very high uniformity of the resistivity values.

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