arXiv subjects

Greg Sun

Publications and source records attributed to Greg Sun.

14 recordsLinked to original sources

arXiv2026

Leveraging Large Language Models for Sentiment Analysis: Multi-Modal Analysis of Decentraland's MANA Token

Decentraland, a decentralized virtual reality platform operating within the expanding Metaverse ecosystem, utilizes its native MANA token to facilitate virtual asset transactions and governance. This study investigates the integration of Discord community sentiment with multi-modal financial data to enhance cryptocurrency price prediction within virtual world economies. We address: (1) identifying sentiment patterns within Decentraland's Discord community, and (2) evaluating the impact of multi-modal features on token return forecasting. Using a BERT-based large language model for sentiment analysis, we develop two LSTM architectures: a baseline incorporating historical prices and a multi-modal variant integrating sentiment scores, trading volume, and market capitalization. Results indicate predominantly neutral community sentiment with a positive skew. The multi-modal model significantly outperforms the price-only baseline in prediction accuracy. These findings demonstrate the predictive value of community-derived signals for virtual economy forecasting and establish a foundation for future research at the intersection of immersive virtual environments, natural language processing, and cryptocurrency market analysis.

cs.CL↗

arXiv2025

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect

SiGeSn-based optoelectronic devices, which operate across a broad infrared wavelength range, have attracted significant attention, particularly heterostructures utilizing quantum wells are widely utilized. In these structures, band alignment type and barrier height are crucial for carrier confinement, making them highly desirable information to obtain. This work leverages the internal photoemission effect to extract effective barrier heights from a Si0.024Ge0.892Sn0.084 / Ge0.882Sn0.118 single quantum well structure, which was pseudomorphically grown on Ge0.9Sn0.1 and Ge buffered Si substrate. The extracted effective barrier heights are approximately 22{plus minus}2 and 50{plus minus}2 meV for electrons and holes, respectively. Moreover, we have identified the type-I band alignment between GeSn well and SiGeSn barrier, as indicated by an internal photoemission threshold of 555 {plus minus} 1 meV.

physics.app-ph↗

arXiv2020

Electrically injected GeSn lasers with peak wavelength up to 2.7 micrometer at 90 K

GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant progress, the study of the electrically injected lasers has just begun only recently. In this work, we present explorative investigations of electrically injected GeSn heterostructure lasers with various layer thicknesses and material compositions. The cap layer total thickness was varied between 240 and 100 nm. At 10 K, a 240-nm-SiGeSn capped device had a threshold current density Jth = 0.6 kA/cm2 compared to Jth = 1.4 kA/cm2 of a device with 100-nm-SiGeSn cap due to an improved modal overlap with the GeSn gain region. Both devices had a maximum operating temperature Tmax = 100 K. Device with cap layers of Si0.03Ge0.89Sn0.08 and Ge0.95Sn0.05, respectively, were also compared. Due to less effective carrier (electron) confinement, the device with a 240-nm-GeSn cap had a higher threshold Jth = 2.4 kA/cm2 and lower maximum operating temperature Tmax = 90 K, compared to those of the 240-nm-SiGeSn capped device with Jth = 0.6 kA/cm2 and Tmax = 100 K. In the study of the active region material, the device with Ge0.85Sn0.15 active region had a 2.3 times higher Jth and 10 K lower Tmax, compared to the device with Ge0.89Sn0.11 in its active region. This is likely due to higher defect density in Ge0.85Sn0.15 rather than an intrinsic issue. The longest lasing wavelength was measured as 2682 nm at 90 K. The investigations provide guidance to the future structure design of GeSn laser diodes to further improve the performance.

physics.app-ph↗

arXiv2020

Electrically injected GeSn lasers on Si operating up to 100 K

The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many reports focused on optically pumped lasers, GeSn lasers through electrical injection have not been experimentally achieved yet. In this work, we report the first demonstration of electrically injected GeSn lasers on Si. A GeSn/SiGeSn heterostructure diode grown on a Si substrate was fabricated into ridge waveguide laser devices and tested under pulsed conditions. Special considerations were given for the structure design to ensure effective carrier confinement and optical confinement that lead to lasing. Lasing was observed at temperatures from 10 to 100 K with emission peaks at around 2300 nm. The minimum threshold of 598 A/cm2 was recorded at 10 K and the threshold increased to 842 A/cm2 at 77 K. The spectral linewidth of a single peak was measured as small as 0.13 nm (0.06 meV). The maximum characteristic temperature was extracted as 99 K over the temperature range of 10-77 K.

physics.app-ph↗

arXiv2020

Strain effects on Phase-Filling Singularities in Highly Doped n-Type Ge

Recently, Chi Xu et al. predicted the phase-filling singularities (PFS) in the optical dielectric function (ODF) of the highly doped $n$-type Ge and confirmed in experiment the PFS associated $E_{1}+\Delta_{1}$ transition by advanced \textit{in situ} doping technology [Phys. Rev. Lett. 118, 267402 (2017)], but the strong overlap between $E_{1}$ and $E_{1}+\Delta_{1}$ optical transitions made the PFS associated $E_{1}$ transition that occurs at the high doping concentration unobservable in their measurement. In this work, we investigate the PFS of the highly doped n-type Ge in the presence of the uniaxial and biaxial tensile strain along [100], [110] and [111] crystal orientation. Compared with the relaxed bulk Ge, the tensile strain along [100] increases the energy separation between the $E_{1}$ and $E_{1}+\Delta_{1}$ transition, making it possible to reveal the PFS associated $E_{1}$ transition in optical measurement. Besides, the application of tensile strain along [110] and [111] offers the possibility of lowering the required doping concentration for the PFS to be observed, resulting in new additional features associated with $E_{1}+\Delta_{1}$ transition at inequivalent $L$-valleys. These theoretical predications with more distinguishable optical transition features in the presence of the uniaxial and biaxial tensile strain can be more conveniently observed in experiment, providing new insights into the excited states in heavily doped semiconductors.

cond-mat.mtrl-sci↗

arXiv2019

Si-based GeSn photodetectors towards mid-infrared imaging applications

This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging from 10.5% to 22.3%, showing the cut-off wavelength has been extended to 3.65 um. The measured maximum D* of 1.1x10^10 cmHz^(1/2)W(-1) is comparable to that of commercial extended-InGaAs detectors; 2) the development of surface passivation technique on photodiode based on in-depth analysis of dark current mechanism, effectively reducing the dark current. Moreover, mid-infrared images were obtained using GeSn photodetectors, showing the comparable image quality with that acquired by using commercial PbSe detectors.

physics.app-ph↗

arXiv2019

Band structure of Ge$_{1-x}$Sn$_{x}$alloy: a full-zone 30-band $k$$\cdot$$p$ model

A full-zone 30-band $k$$\cdot$$p$ model is developed as an efficient and reliable tool to compute electronic band structure in Ge$_{1-x}$Sn$_{x}$ alloy. The model was first used to reproduce the electronic band structures in Ge and $\alpha$-Sn obtained with empirical tight binding and \textit{ab initio} methods. Input parameters for the 30-band $k$$\cdot$$p$ model are carefully calibrated against prior empirical predications and experimental data. Important material properties such as effective mass for electrons and holes, Luttinger parameters, and density of states are obtained for Ge$_{1-x}$Sn$_{x}$ alloy with the composition range $0<x<0.3$. The 30-band $k$$\cdot$$p$ model that requires far less computing resources is a necessary capability for optimization of sophisticated devices made from Ge$_{1-x}$Sn$_{x}$ alloy with a large parameter space to explore.

physics.app-ph↗

arXiv2017

Si-based GeSn lasers with wavelength coverage of 2 to 3 {\mu}m and operating temperatures up to 180 K

A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the traditional III-V integration approach. We demonstrated optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 {\mu}m. The GeSn alloys were grown using newly developed approaches with an industry standard chemical vapor deposition reactor and low-cost commercially available precursors. The achieved maximum Sn composition of 17.5% exceeded the generally acknowledged Sn incorporation limits for using similar deposition chemistries. The highest lasing temperature was measured as 180 K with the active layer thickness as thin as 260 nm. The unprecedented lasing performance is mainly due to the unique growth approaches, which offer high-quality epitaxial materials. The results reported in this work show a major advance towards Si-based mid-infrared laser sources for integrated photonics.

physics.app-ph↗

arXiv2015

Impact of surface collisions on enhancement and quenching of the luminescence near the metal nanoparticles

The fact that surface-induced damping rate of surface plasmon polaritons (SPPs) in metal nanoparticles increases with the decrease of particle size is well known. We show that this rate also increases with the degree of the mode confinement, hence damping of the higher order nonradiative SPP modes in spherical particles is greatly enhanced relative to damping of the fundamental (dipole) SPP mode. Since higher order modes are the ones responsible for quenching of luminescence in the vicinity of metal surfaces, the degree of quenching increases resulting in a substantial decrease in the amount of attainable enhancement of the luminescence

physics.optics↗

arXiv2013

Spasers, VCSELs, and Surface plasmon emitting diodes (SPED): their unique features and figures of merit

We compare fundamental characteristics of proposed electrically pumped subwavelength plasmonic lasers (spasers) with ubiquitous all-dielectric semiconductor micro-lasers (VCSEL) and indicate their close similarities as well as large differences in performance (threshold, efficiency, coherence and speed). These results should assist researchers in making informed choice of the emitter for each particular opto-electronic application.

physics.optics↗

arXiv2013

Plasmonic enhancement of the third order nonlinear optical phenomena: figures of merit

Recent years have seen increased interest to plasmonic enhancement of nonlinear optical effects, yet there remains an uncertainty of what are the limits of this enhancement. We present a simple and physically transparent theory of plasmonic enhancement of third order nonlinear optical processes achieved in plasmonic structures and show that while huge enhancement of effective nonlinear index can be attained, the most relevant figure of merit, the of phase shift per one absorption length remains very low. This means that while on one hand nonlinear plasmonic materials are not well suitable for applications requiring high efficiency, e.g. all-optical switching and wavelength conversion, on the other hand they can be very useful for the applications where the overall high efficiency is not a must, such as sensing.

physics.optics↗

arXiv2012

Guided plasmon modes of triangular and inverted triangular cross section silver nanoridges

Propagating two-dimensional plasmon modes guided along silver nanoridge waveguides with triangular and inverted triangular cross sections are investigated in this paper. Mode field profiles, dispersion curves, propagation distances, and figure-of-merits of the plasmon ridge modes are calculated for silver nanoridge waveguides with various triangular and inverted triangular waveguide cross sections. It is found that the triangular cross section nanoridge waveguide, if designed properly, can have longer propagation distance and higher figure-of-merit than the flat-top nanoridge waveguide of the same width. When the triangle height of the nanoridge is high, the mode approaches to the small angle wedge mode. An inverted triangular cross section nanoridge mode can be considered as a hybrid mode of two metal wedge plasmon modes. When inverted triangle depth increases, the propagation distance and the figure-of-merit decrease dramatically, suggesting the poorer performance when compared to the flat-top nanoridge plasmon waveguide.

physics.optics↗

arXiv2011

Mode Properties of Flat-top Silver Nano-ridge Surface Plasmon Waveguides

We investigate surface plasmon modes supported by flat-top silver nano-ridges. We calculate the mode electromagnetic field distribution, the dispersion curve, the travel range, and the figure-of-merit of the nano-ridge mode. We find that the nano-ridge surface plasmon modes are quasi-TEM modes with longitudinal field components three orders of magnitude smaller than the transverse field components. The quasi-TEM nature of mode profiles reveals that the propagation of free electron oscillations on the top of the nano-ridge contributes mainly to the tightly confined ridge mode. We also find that as the width of the nano-ridge decreases, the ridge mode becomes more tightly confined on the ridge top. As the width of the nano-ridge increases, the nano-ridge mode approaches two decoupled right-angle wedge plasmon modes.

physics.optics↗

arXiv2011

Scaling of losses with size and wavelength in nanoplasmonics and metamaterials

We show that, for the resonant metal-dielectric structures with sub-wavelength confinement of light in all three dimensions, the loss cannot be reduced significantly below the loss of the metal itself unless one operates in the far IR and THz regions of the spectrum or below. Such high losses cannot be compensated by introducing gain due to Purcell-induced shortening of recombination times. The only way low loss optical metamaterials can be engineered is with as yet unknown low loss materials with negative permittivity.

physics.optics↗